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1. 发明申请

US20060180076A1 Vapor deposition apparatus and vapor deposition method 有权
公开(公告)号：US20060180076A1
公开(公告)日：2006-08-17
申请号：US10565653
申请日：2004-04-26
申请人： Koichi Kanaya , Toru Otsuka , Takao Kanno
发明人： Koichi Kanaya , Toru Otsuka , Takao Kanno
IPC分类号： C30B23/00 , C30B25/00 , C30B28/12 , C30B28/14
CPC分类号： H01L21/68735 , C30B25/12 , C30B29/06
摘要： In a vapor phase growth apparatus for performing a vapor phase growth of a silicon epitaxial layer on a main surface of a silicon single crystal substrate while heating the silicon single crystal substrate placed on a pocket formed on a susceptor, from both sides, the pocket has an outer peripheral side part which supports a rear surface of the silicon single crystal substrate and an inner peripheral side part which is kept in a state of being more recessed than the outer peripheral side part in the inside of the outer peripheral side part, and the susceptor has a warped inverted U-shaped longitudinal sectional shape.

2. 发明授权

US07591908B2 Vapor deposition apparatus and vapor deposition method 有权
标题翻译：蒸镀装置及气相沉积法
公开(公告)号：US07591908B2
公开(公告)日：2009-09-22
申请号：US10565653
申请日：2004-04-26
申请人： Koichi Kanaya , Toru Otsuka , Takao Kanno
发明人： Koichi Kanaya , Toru Otsuka , Takao Kanno
IPC分类号： C23C16/00 , C23F1/00 , H01L21/306
CPC分类号： H01L21/68735 , C30B25/12 , C30B29/06
摘要： In a vapor phase growth apparatus for performing a vapor phase growth of a silicon epitaxial layer on a main surface of a silicon single crystal substrate while heating the silicon single crystal substrate placed on a pocket formed on a susceptor, from both sides, the pocket has an outer peripheral side part which supports a rear surface of the silicon single crystal substrate and an inner peripheral side part which is kept in a state of being more recessed than the outer peripheral side part in the inside of the outer peripheral side part, and the susceptor has a warped inverted U-shaped longitudinal sectional shape.
摘要翻译：在气相生长装置中，在两面均加热形成在基座上的凹穴上的硅单晶衬底的同时，在硅单晶衬底的主表面上进行硅外延层的气相生长，支撑硅单晶基板的后表面的外周侧部分和保持在外周侧部分的内侧比外周侧凹陷的状态的内周侧部分，并且基座具有翘曲的倒U形纵截面形状。

3. 发明申请

US20060180086A1 Susceptor and vapor growth device 审中-公开
标题翻译：受体和蒸气生长装置
公开(公告)号：US20060180086A1
公开(公告)日：2006-08-17
申请号：US10552438
申请日：2004-03-12
申请人： Koichi Kanaya , Toru Otsuka , Igroki Ose
发明人： Koichi Kanaya , Toru Otsuka , Igroki Ose
IPC分类号： H01L21/306 , C23C16/00
CPC分类号： H01L21/68735 , C23C16/4584 , C30B25/12
摘要： A susceptor (2) in which a semiconductor substrate (W) is supported approximately horizontally in a pocket (2c) when performing a vapor phase growth of a single crystal thin film on a front surface of the semiconductor substrate (W), and in which the pocket (2c) comprises an outer peripheral pocket portion (20) to support the semiconductor substrate (W) and a central side pocket portion (21) which is formed inside the outer peripheral side pocket portion (20) to be concave from the outer peripheral side pocket portion (20), wherein the outer peripheral side pocket portion (20) comprises a substrate supporting surface (20a) which is inclined with respect to a horizontal surface to be lowered toward a central side from an outer peripheral side of the pocket (2c), and a region of the substrate supporting surface (20a) excluding at least an inner peripheral edge supports a portion of a rear surface of the semiconductor substrate (W) which is inside an outer peripheral edge of the semiconductor substrate (W).
摘要翻译：在半导体衬底（W）的前表面上执行单晶薄膜的气相生长时，其中半导体衬底（W）大致水平地支撑在凹穴（2c）中的感受体（2）所述袋（2c）包括用于支撑所述半导体衬底（W）的外周袋部分（20）和形成在所述外周侧袋部分（20）内的凹入的中心侧袋部分（21）外周侧袋部（20），其中，所述外周侧袋部（20）具有基板支撑面（20a），所述基板支撑面（20a）相对于从外周侧向中心侧倾斜的水平面（2c），并且至少不包括内周边缘的基板支撑表面（20a）的区域支撑半导体衬底（W）的位于外周的内表面的一部分半导体衬底（W）的边缘。

4. 发明授权

US07615116B2 Method for producing silicon epitaxial wafer and silicon epitaxial wafer 有权
标题翻译：硅外延晶片和硅外延晶片的制造方法
公开(公告)号：US07615116B2
公开(公告)日：2009-11-10
申请号：US10572465
申请日：2004-09-27
申请人： Koichi Kanaya , Tsuyoshi Nishizawa
发明人： Koichi Kanaya , Tsuyoshi Nishizawa
IPC分类号： C30B21/02
CPC分类号： C30B25/02 , C30B25/12 , C30B29/06
摘要： In a vapor phase growth apparatus including a reaction chamber, a susceptor, a lift pin, an upper heating device, and a lower heating device, a heating ratio between the upper heating ratio and the lower heating ratio is adjusted.
摘要翻译：在包括反应室，基座，升降销，上加热装置和下加热装置的气相生长装置中，调节上加热比和下加热比之间的加热比。

5. 发明申请

US20080248728A1 Method for manufacturing polishing pad, polishing pad, and method for polishing wafer 有权
标题翻译：制造抛光垫的方法，抛光垫和抛光晶片的方法
公开(公告)号：US20080248728A1
公开(公告)日：2008-10-09
申请号：US12078525
申请日：2008-04-01
申请人： Koichi Kanaya , Masayoshi Sekizawa , Naotaka Toyama
发明人： Koichi Kanaya , Masayoshi Sekizawa , Naotaka Toyama
IPC分类号： B24D11/00 , B24D18/00 , B24B1/00
CPC分类号： B24D18/00 , B24B37/20 , Y10T428/24992
摘要： There is disclosed a method for manufacturing a polishing pad that is formed of a urethane foam pad and attached to a turn table to polish a wafer, the method comprising at least steps of: slicing a urethane foam cake to provide the urethane foam pad; and performing press processing with respect to the urethane foam pad with a pressure of 15000 g/cm2 or above, a polishing pad manufactured by this method, and a method for polishing a wafer by using this polishing pad. There can be provided a method for manufacturing a polishing pad that can stably obtain a wafer with high flatness, etc.
摘要翻译：公开了一种用于制造由聚氨酯泡沫垫形成的抛光垫的方法，该抛光垫安装在转台上以抛光晶片，所述方法至少包括以下步骤：切割聚氨酯泡沫块以提供聚氨酯泡沫垫; 对该聚氨酯泡沫垫进行压力加工，压力为15000g / cm 2以上，通过该方法制造的研磨垫，以及使用该抛光垫来研磨晶片的方法。可以提供一种能够稳定地获得具有高平坦度等的晶片的抛光垫的制造方法。

6. 发明授权

US5784663A System for supervising an image forming apparatus from a remote computer via a communication control unit 失效
标题翻译：用于经由通信控制单元从远程计算机监视图像形成装置的系统
公开(公告)号：US5784663A
公开(公告)日：1998-07-21
申请号：US813592
申请日：1997-03-07
申请人： Masayuki Hayashi , Yoshihiro Mitekura , Koichi Kanaya , Masato Terao , Toshiya Tagawa , Nobuaki Tomidokoro , Masahiro Kitayama , Osamu Kizaki , Yasuo Kawada , Kazuyuki Nakahara , Tomofumi Harada , Yasunari Hashimoto
发明人： Masayuki Hayashi , Yoshihiro Mitekura , Koichi Kanaya , Masato Terao , Toshiya Tagawa , Nobuaki Tomidokoro , Masahiro Kitayama , Osamu Kizaki , Yasuo Kawada , Kazuyuki Nakahara , Tomofumi Harada , Yasunari Hashimoto
IPC分类号： G03G21/00 , G01R31/3185 , G03G15/00 , G06F11/273 , G06F11/34 , H04M11/00 , H04N1/00 , G03C15/00
CPC分类号： G06F11/2294 , G03G15/5079 , G06F11/0733 , G06F11/0748 , G01R31/318516 , G03G15/55 , G03G2215/00113 , G06F11/3485
摘要： A control system for collectively supervising a plurality of copiers or similar image forming apparatuses connected to a control device by communication lines with or without the intermediary of communication control units. To down-load data relating to image formation, the control device determines whether or not a copier of interest is in an inoperative state and, if it is in an inoperative state, automatically sends the data to the copier via a telephone line, an exchange, and a communication control unit. This data is written to storing means built in the copier. To up-load data relating to image formation, the control device causes each copier to automatically send the data stored in the storing means and stores the data in memory means. Up-loading is effected at an optimal time other than the time when the copier is performing an automatic adjustment, is in use, or is quite likely to be used.
摘要翻译：一种控制系统，用于通过具有或不具有通信控制单元的中介的通信线路来共同监督连接到控制设备的多个复印机或类似图像形成设备。为了下载与图像形成有关的数据，控制装置确定感兴趣的复印机是否处于非操作状态，并且如果它处于不工作状态，则经由电话线，交换机自动发送数据到复印机，以及通信控制单元。该数据被写入复印机内置的存储装置。为了加载与图像形成有关的数据，控制装置使每个复印机自动发送存储在存储装置中的数据并将数据存储在存储装置中。在复印机进行自动调整，正在使用或很有可能使用的时间以外的最佳时间进行上载。

7. 发明授权

US07459720B2 Single crystal wafer and solar battery cell 有权
标题翻译：单晶晶片和太阳能电池单元
公开(公告)号：US07459720B2
公开(公告)日：2008-12-02
申请号：US10332434
申请日：2001-07-06
申请人： Tadahiro Ohmi , Shigetoshi Sugawa , Tatsuo Ito , Koichi Kanaya
发明人： Tadahiro Ohmi , Shigetoshi Sugawa , Tatsuo Ito , Koichi Kanaya
IPC分类号： H01L29/04
CPC分类号： H01L21/28211 , C30B15/00 , C30B29/06 , H01L29/518 , H01L31/028 , H01L31/036 , Y02E10/547 , Y02P80/30
摘要： The present invention provides a single crystal wafer, wherein the main surface has a plane or a plane equivalent to a plane tilting with respect to a [100] axis of single crystal by angles of α (0°
摘要翻译：本发明提供了一种单晶晶片，其中主表面具有相对于单晶的[100]轴倾斜的平面的平面或平面，其角度为α（0°<α<90°）方向，[01-1]方向的β（0°<β<90°）和[10-1]或[101]方向的γ（0°<= gamma <45°）。因此，提供即使以小的晶片厚度即可充分承受器件制造工艺的单晶晶片，从而降低单晶原料的损失。此外，通过使用这样的晶片，以低成本提供MIS型半导体器件和太阳能电池。

8. 发明授权

US06217651B1 Method for correction of thin film growth temperature 有权
标题翻译：薄膜生长温度校正方法
公开(公告)号：US06217651B1
公开(公告)日：2001-04-17
申请号：US09356319
申请日：1999-07-16
申请人： Hisashi Kashino , Koichi Kanaya
发明人： Hisashi Kashino , Koichi Kanaya
IPC分类号： C30B2516
CPC分类号： C23C16/52 , C30B25/16
摘要： In the process of thin film growth, actual temperature of a substrate is measured and corrected with low cost in short time. With first thin film growth equipment of which a difference between set temperature of a heating source and an actual temperature of the substrate (hereinafter, referred to as temperature characteristic) is known, a first calibration curve representing “thin film growth rate vs. substrate actual temperature” is prepared. Next, thin film growth is conducted at one set temperature T2 with use of second thin film growth equipment whose temperature characteristic is unknown, where a difference from a set temperature T1 reading from the first calibration curve in correspondence to a thin film growth rate G resulting from the thin film growth process is determined. This difference is added to a set temperature T3 in the diffusion controlled temperature region at which the thin film growth is actually performed, making it possible to achieve thin film growth at an accurate substrate surface temperature. The temperature characteristic of the first thin film growth equipment can be known based on a second calibration curve representing “sheet resistance vs. substrate actual temperature” prepared by using a test-use substrate by ion implantation.
摘要翻译：在薄膜生长过程中，在短时间内以低成本测量和校正基板的实际温度。利用第一薄膜生长设备，其中加热源的设定温度与基板的实际温度之间的差异（以下称为温度特性）是已知的，表示“薄膜生长速率对基板实际值”的第一校准曲线温度“。接下来，使用温度特性未知的第二薄膜生长设备在一个设定温度T2下进行薄膜生长，其中与从薄膜生长速率G相应的从第一校准曲线读取的设定温度T1的差异导致从薄膜生长过程确定。该差异被添加到实际进行薄膜生长的扩散控制温度区域的设定温度T3，使得可以在精确的基板表面温度下实现薄膜生长。基于通过使用通过离子注入使用测试用基板制备的表示“薄层电阻与基板实际温度”的第二校准曲线，可以知道第一薄膜生长设备的温度特性。

9. 发明授权

US5228669A Automatic document feeder for an image forming apparatus 失效
标题翻译：用于成像设备的自动送纸器
公开(公告)号：US5228669A
公开(公告)日：1993-07-20
申请号：US763455
申请日：1991-09-20
申请人： Koichi Kanaya
发明人： Koichi Kanaya
IPC分类号： G03G15/00
CPC分类号： G03G15/60
摘要： An automatic document feeder (ADF) for use with an image forming apparatus and freeing the operator from extra work associated with documents discharged after illumination. When the operator intentionally stacks the first page to the last page of documents in this order and sets them on an ADF table face down due to a copy discharge mode which requires the ADF to discharge the last page to the first page in this order face up, the ADF reverses the documents before discharging them. Hence, despite that the ADF discharges the documents from the last page to the first page, it successfully stacks the documents in order of page by turning them over.
摘要翻译：一种与图像形成装置一起使用的自动送纸器（ADF），释放操作者与照明后放出的文件相关的额外工作。当操作员有意地按照这个顺序将第一页堆叠到文档的最后一页时，由于需要ADF将最后一页以最后一页排列到第一页面的复印放电模式，将它们放在ADF表面上。 ADF在卸货前撤销文件。因此，尽管ADF将文档从最后一页排放到第一页，但是通过翻转它们可以按页面顺序堆叠文档。

10. 发明申请

US20090252942A1 Method for Manufacturing Epitaxial Wafer and Epitaxial Wafer 审中-公开
标题翻译：制造外延晶片和外延晶片的方法
公开(公告)号：US20090252942A1
公开(公告)日：2009-10-08
申请号：US12084627
申请日：2006-10-25
申请人： Koichi Kanaya , Masato Ohnishi
发明人： Koichi Kanaya , Masato Ohnishi
IPC分类号： B32B5/00 , C30B25/16 , C01B33/02
CPC分类号： C30B25/16 , C30B25/02 , C30B25/165 , C30B29/06 , H01L21/02381 , H01L21/02532 , H01L21/0262 , H01L21/02634
摘要： The present invention provides a method for manufacturing an epitaxial wafer by supplying a raw material gas onto a silicon wafer to perform vapor-phase growth of an epitaxial layer, wherein a thickness of the epitaxial layer that is formed at a peripheral portion of the silicon wafer is controlled by controlling a growth rate and/or a growth temperature of the epitaxial layer that is subjected to vapor-phase growth. As a result, there is provided the method that enables manufacturing an epitaxial wafer having a small roll-off value by controlling a thickness of an epitaxial layer near the outermost periphery at the time of epitaxial growth.
摘要翻译：本发明提供一种通过将原料气体供给到硅晶片上以进行外延层的气相生长来制造外延晶片的方法，其中形成在硅晶片的周边部分的外延层的厚度通过控制经历气相生长的外延层的生长速率和/或生长温度来控制。结果，提供了通过在外延生长时控制最外周附近的外延层的厚度，能够制造具有小滚降值的外延晶片的方法。

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