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    • 2. 发明申请
    • EPITAXIAL GROWTH METHOD
    • 外来生长方法
    • US20100251958A1
    • 2010-10-07
    • US12743976
    • 2008-11-18
    • Masato Ohnishi
    • Masato Ohnishi
    • C30B23/02
    • C23C16/44C30B25/08C30B25/14
    • The invention provides an epitaxial growth method which is a single wafer processing epitaxial growth method by which at least a single crystal substrate is placed in a reaction chamber with an upper wall having a downward convexity and an epitaxial layer is deposited on the single crystal substrate by introducing raw material gas and carrier gas into the reaction chamber through a gas feed port, in which, after any one of the radius of curvature of the upper wall of the reaction chamber and a difference between an upper end of the gas feed port and a lower end of the upper wall of the reaction chamber in the height direction or both are adjusted in accordance with the flow rate of the carrier gas which is introduced into the reaction chamber through the gas feed port, an epitaxial layer is deposited on the single crystal substrate. As a result, a single wafer processing epitaxial growth method is provided that can obtain the effects, such as an increase in the quality of an epitaxial wafer and an increase in productivity, which are produced by the degree of the flow rate of carrier gas, and deposit an epitaxial layer on a single crystal substrate without deforming the film thickness shape.
    • 本发明提供了一种外延生长方法,该方法是单晶体处理外延生长方法,其中至少单晶衬底放置在具有向下凸起的上壁的反应室中,并且外延层通过以下方式沉积在单晶衬底上: 通过气体供给口将原料气体和载气引入反应室,其中,在反应室的上壁的曲率半径中的任何一个和气体供给口的上端和 根据通过气体供给口引入反应室的载气的流量来调节反应室上壁的高度方向的上端或两者的下端,外延层沉积在单晶 基质。 结果,提供了单晶片处理外延生长方法,其可以获得通过载气流量的程度产生的效果,例如外延晶片的质量的提高和生产率的提高, 并且在单晶基板上沉积外延层而不使膜厚形状变形。
    • 3. 发明申请
    • EXPOSING DEVICE AND IMAGE FORMING APPARATUS INCORPORATING THE SAME
    • 曝光装置和成像装置的图像形成装置
    • US20080181668A1
    • 2008-07-31
    • US12019928
    • 2008-01-25
    • Masato Ohnishi
    • Masato Ohnishi
    • G03G15/04
    • G03G15/04036G03G15/0435G03G2215/0404
    • An exposing device includes a light source that emits scanning light, a polygonal rotating mirror that scans and deflects the scanning light in a specific scanning direction, a reflection mirror that reflects the scanning light that has been scanned and deflected at plural reflection points aligned in a specific direction for the scanning light to go incident on the image carrier, and a unit main body in which the polygonal rotating mirror and the reflection mirror are disposed at a specific interval. The unit main body has two attachment fixing portions on almost a same line linking the reflection points and fixed to the apparatus main body. An attachment support is supported on the apparatus main body and allows free expansion of the unit main body in a plane direction including the scanning direction of the polygonal rotating mirror on a side where the polygonal rotating mirror is installed.
    • 曝光装置包括发射扫描光的光源,沿特定扫描方向扫描和偏转扫描光的多边形旋转镜,反射在多个反射点被扫描和偏转的扫描光, 扫描光入射到图像载体上的特定方向,以及多边形旋转镜和反射镜以特定间隔设置的单元主体。 单元主体在连接反射点并固定到设备主体的几乎相同的线上具有两个附接固定部。 附装支撑体支撑在装置主体上,并且允许单元主体在包括多边形旋转镜的扫描方向的平面方向上在安装多边形旋转镜的一侧上自由地膨胀。
    • 4. 发明申请
    • Fumaric Acid Derivatives and Ophthalmic Lenses Using the Same
    • 富马酸衍生物和使用其的眼科镜片
    • US20080132666A1
    • 2008-06-05
    • US11766857
    • 2007-06-22
    • Takahito ItohTakahiro UnoMasato OhnishiYasuyuki KatoTakashi Otsu
    • Takahito ItohTakahiro UnoMasato OhnishiYasuyuki KatoTakashi Otsu
    • C08F30/08C07F7/08C07F7/10C08G77/20C08F26/06
    • C07F7/0838
    • The present invention relates to fumaric acid derivatives and ophthalmic lenses using them. More specifically, the present invention relates to a fumaric acid derivative having a hydrophilic group and a silicon-containing alkyl group within a molecule, and to contact lenses or intraocular lenses.The fumaric acid derivatives of the present invention provide, on one hand, superior oxygen permeability by having a silicon-containing alkyl group within the molecular structure, and on the other hand, improved compatibility with other hydrophilic monomers by having a hydrophilic group within the same molecule. When ophthalmic lenses obtained by polymerizing monomer compositions containing the fumaric acid derivative are constructed as, for example, water content lenses, lenses with high oxygen permeability independent from the water content may be obtained, wherein the fumaric acid derivatives is superior in compatibility with the hydrophilic monomer used in combination and allows the combination in various mixing ratios.
    • 本发明涉及使用它们的富马酸衍生物和眼用透镜。 更具体地,本发明涉及分子内具有亲水基团和含硅烷基的富马酸衍生物,并且涉及隐形眼镜或人工晶状体。 本发明的富马酸衍生物一方面通过在分子结构内具有含硅烷基而提供优异的透氧性,另一方面通过在其内具有亲水性基团来提高与其它亲水性单体的相容性 分子。 当通过聚合含有富马酸衍生物的单体组合物获得的眼镜片被构造为例如含水透镜时,可以获得与透湿性无关的具有高氧渗透性的透镜,其中富马酸衍生物与亲水性相容性优异 单体组合使用并允许以各种混合比例组合。
    • 8. 发明申请
    • SUSCEPTOR AND METHOD FOR MANUFACTURING EPITAXIAL WAFER
    • 用于制造外延波形的SUSCEPTOR AND METHOD AND METHOD FOR MANUFACTURING EPITAXIAL WAFER
    • US20130180447A1
    • 2013-07-18
    • US13824731
    • 2011-11-10
    • Masato Ohnishi
    • Masato Ohnishi
    • C30B25/12
    • C30B25/12C23C16/4581C23C16/46H01L21/68735Y10T117/00Y10T117/10
    • A susceptor is disclosed that can increase a heat capacity of a susceptor outer peripheral portion by enlarging the thickness of the susceptor and equalize thermal conditions for an outer peripheral portion and the inner peripheral portion of a wafer and a method for manufacturing an epitaxial wafer that uses this susceptor to perform vapor-phase epitaxy of an epitaxial layer. Back surface depositions have a close relationship with heat transfer that occurs between a wafer and a susceptor, i.e., a wafer outer peripheral portion has a higher temperature than a wafer inner peripheral portion since the wafer is in contact with or close to the susceptor at the wafer outer peripheral portion and hence the back surface depositions are apt to be generated. This is solved by equalizing thermal conditions for the wafer outer peripheral portion and the inner peripheral portion of the wafer back surface.
    • 公开了一种基座,其可以通过扩大基座的厚度来增加基座外周部分的热容量,并且使晶片的外周部分和内周部分的热条件均匀化,以及制造使用的外延晶片的方法 该感受器执行外延层的气相外延。 背面沉积与在晶片和基座之间发生的热传递具有密切的关系,即,晶片外周部分具有比晶片内周部分更高的温度,因为晶片与基片处于接触或靠近基座 晶片外周部分易于产生背面沉积。 这通过使晶片外周部分和晶片背表面的内周部分的热条件相等来解决。