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1. 发明授权

US07779554B2 Holding gripper and holding method for semiconductor wafer and shape measuring apparatus 有权
标题翻译：保持用于半导体晶片和形状测量装置的夹持和保持方法
公开(公告)号：US07779554B2
公开(公告)日：2010-08-24
申请号：US11885189
申请日：2006-03-09
申请人： Masato Onishi , Koichi Kanaya
发明人： Masato Onishi , Koichi Kanaya
IPC分类号： G01B5/00
CPC分类号： H01L21/68707 , H01L21/67288 , H01L21/683
摘要： The present invention provides a strip-like holding gripper which holds a semiconductor wafer when measuring a shape of the semiconductor wafer, wherein a side where the semiconductor wafer is held has a round shape, a groove which holds an edge of the semiconductor wafer along a side surface of the round shape portion is provided on the side surface, and the groove comes into contact with the edge of the semiconductor wafer from a periphery of the wafer to hold the semiconductor wafer. As a result, it is possible to provide the gripper, which can stably hold the wafer in a fixed state even if the gripper is inclined when holding the wafer, a holding method, and a shape measuring apparatus.
摘要翻译：本发明提供了一种条状保持夹持器，其在测量半导体晶片的形状时保持半导体晶片，其中保持半导体晶片的一侧具有圆形形状，沿着半导体晶片的边缘保持半导体晶片的边缘圆形部分的侧表面设置在侧表面上，并且槽从晶片的周边与半导体晶片的边缘接触以保持半导体晶片。结果，即使在保持晶片时夹具倾斜的情况下，也可以提供能够将晶片稳定地保持在固定状态的夹持器，保持方法和形状测量装置。

2. 发明申请

US20070119367A1 Method for producing silicon epitaxial wafer and silicon epitaxial wafer 有权
标题翻译：硅外延晶片和硅外延晶片的制造方法
公开(公告)号：US20070119367A1
公开(公告)日：2007-05-31
申请号：US10572465
申请日：2004-09-27
申请人： Koichi Kanaya , Tsuyoshi Nishizawa
发明人： Koichi Kanaya , Tsuyoshi Nishizawa
IPC分类号： C30B23/00 , C23C16/00
CPC分类号： C30B25/02 , C30B25/12 , C30B29/06
摘要： In a vapor phase growth apparatus including a reaction chamber, a susceptor, a lift pin, an upper heating device, and a lower heating device, a heating ratio between the upper heating ratio and the lower heating ratio is adjusted.
摘要翻译：在包括反应室，基座，升降销，上加热装置和下加热装置的气相生长装置中，调节上加热比和下加热比之间的加热比。

3. 发明申请

US20060180086A1 Susceptor and vapor growth device 审中-公开
标题翻译：受体和蒸气生长装置
公开(公告)号：US20060180086A1
公开(公告)日：2006-08-17
申请号：US10552438
申请日：2004-03-12
申请人： Koichi Kanaya , Toru Otsuka , Igroki Ose
发明人： Koichi Kanaya , Toru Otsuka , Igroki Ose
IPC分类号： H01L21/306 , C23C16/00
CPC分类号： H01L21/68735 , C23C16/4584 , C30B25/12
摘要： A susceptor (2) in which a semiconductor substrate (W) is supported approximately horizontally in a pocket (2c) when performing a vapor phase growth of a single crystal thin film on a front surface of the semiconductor substrate (W), and in which the pocket (2c) comprises an outer peripheral pocket portion (20) to support the semiconductor substrate (W) and a central side pocket portion (21) which is formed inside the outer peripheral side pocket portion (20) to be concave from the outer peripheral side pocket portion (20), wherein the outer peripheral side pocket portion (20) comprises a substrate supporting surface (20a) which is inclined with respect to a horizontal surface to be lowered toward a central side from an outer peripheral side of the pocket (2c), and a region of the substrate supporting surface (20a) excluding at least an inner peripheral edge supports a portion of a rear surface of the semiconductor substrate (W) which is inside an outer peripheral edge of the semiconductor substrate (W).
摘要翻译：在半导体衬底（W）的前表面上执行单晶薄膜的气相生长时，其中半导体衬底（W）大致水平地支撑在凹穴（2c）中的感受体（2）所述袋（2c）包括用于支撑所述半导体衬底（W）的外周袋部分（20）和形成在所述外周侧袋部分（20）内的凹入的中心侧袋部分（21）外周侧袋部（20），其中，所述外周侧袋部（20）具有基板支撑面（20a），所述基板支撑面（20a）相对于从外周侧向中心侧倾斜的水平面（2c），并且至少不包括内周边缘的基板支撑表面（20a）的区域支撑半导体衬底（W）的位于外周的内表面的一部分半导体衬底（W）的边缘。

4. 发明授权

US5571333A Heat treatment furnace with an exhaust baffle 失效
标题翻译：热处理炉带排气挡板
公开(公告)号：US5571333A
公开(公告)日：1996-11-05
申请号：US451224
申请日：1995-05-26
申请人： Koichi Kanaya
发明人： Koichi Kanaya
IPC分类号： H01L21/22 , H01L21/00 , H01L21/324 , C23C16/00
CPC分类号： H01L21/67109
摘要： A heat treatment furnace has a reaction tube with one open end and a detachable front cap with an exhaust port provided such that it closes the opening of the reaction tube. A detachable inner tube is provided in an opening of the reaction tube wherein the inner tube has a cylindrical side whose diameter is smaller than the inner diameter of the reaction tube. A disk-shaped end is located such that there is a space between the disk-shaped end and the front cap and it has a through hole(s).
摘要翻译：热处理炉具有一个开口端的反应管和一个带有排气口的可拆卸的前盖，其设置成关闭反应管的开口。反应管的开口部设置有可拆卸的内管，其中内管具有直径小于反应管的内径的圆柱形侧。盘形端部被定位成使得在盘形端部和前盖之间存在空间，并且其具有通孔。

5. 发明授权

US5144129A Electron microscope 失效
公开(公告)号：US5144129A
公开(公告)日：1992-09-01
申请号：US630843
申请日：1990-12-20
申请人： Hiroyuki Kobayashi , Koichi Kanaya , Norio Baba , Mitsuo Ogasawara
发明人： Hiroyuki Kobayashi , Koichi Kanaya , Norio Baba , Mitsuo Ogasawara
IPC分类号： H01J37/153 , H01J37/21 , H01J37/22 , H01J37/28
CPC分类号： H01J37/222 , H01J37/28
摘要： An electron microscope comprising an electron gun for generating an electron beam, an irradiation lens system for irradiating a specimen with the electron beam, means for obtaining an image signal of the specimen, a frame memory for storing the image signal, means for obtaining a total accumulation function, which indicates the sum total of accumulated values in a plurality of one-dimensional directions, and in which each of the accumulated values in the plurality of one-dimensional directions indicates accumulation with respect to a frequency of a function obtained by applying one-dimensional Fourier transform to a function obtained by projecting two-dimensional intensity distribution of said image signal in corresponding one-dimensional direction thereof, and means for obtaining a substantial extreme point of the total accumulation function.

6. 发明授权

US07459720B2 Single crystal wafer and solar battery cell 有权
标题翻译：单晶晶片和太阳能电池单元
公开(公告)号：US07459720B2
公开(公告)日：2008-12-02
申请号：US10332434
申请日：2001-07-06
申请人： Tadahiro Ohmi , Shigetoshi Sugawa , Tatsuo Ito , Koichi Kanaya
发明人： Tadahiro Ohmi , Shigetoshi Sugawa , Tatsuo Ito , Koichi Kanaya
IPC分类号： H01L29/04
CPC分类号： H01L21/28211 , C30B15/00 , C30B29/06 , H01L29/518 , H01L31/028 , H01L31/036 , Y02E10/547 , Y02P80/30
摘要： The present invention provides a single crystal wafer, wherein the main surface has a plane or a plane equivalent to a plane tilting with respect to a [100] axis of single crystal by angles of α (0°
摘要翻译：本发明提供了一种单晶晶片，其中主表面具有相对于单晶的[100]轴倾斜的平面的平面或平面，其角度为α（0°<α<90°）方向，[01-1]方向的β（0°<β<90°）和[10-1]或[101]方向的γ（0°<= gamma <45°）。因此，提供即使以小的晶片厚度即可充分承受器件制造工艺的单晶晶片，从而降低单晶原料的损失。此外，通过使用这样的晶片，以低成本提供MIS型半导体器件和太阳能电池。

7. 发明申请

US20060180076A1 Vapor deposition apparatus and vapor deposition method 有权
公开(公告)号：US20060180076A1
公开(公告)日：2006-08-17
申请号：US10565653
申请日：2004-04-26
申请人： Koichi Kanaya , Toru Otsuka , Takao Kanno
发明人： Koichi Kanaya , Toru Otsuka , Takao Kanno
IPC分类号： C30B23/00 , C30B25/00 , C30B28/12 , C30B28/14
CPC分类号： H01L21/68735 , C30B25/12 , C30B29/06
摘要： In a vapor phase growth apparatus for performing a vapor phase growth of a silicon epitaxial layer on a main surface of a silicon single crystal substrate while heating the silicon single crystal substrate placed on a pocket formed on a susceptor, from both sides, the pocket has an outer peripheral side part which supports a rear surface of the silicon single crystal substrate and an inner peripheral side part which is kept in a state of being more recessed than the outer peripheral side part in the inside of the outer peripheral side part, and the susceptor has a warped inverted U-shaped longitudinal sectional shape.

8. 发明授权

US06217651B1 Method for correction of thin film growth temperature 有权
标题翻译：薄膜生长温度校正方法
公开(公告)号：US06217651B1
公开(公告)日：2001-04-17
申请号：US09356319
申请日：1999-07-16
申请人： Hisashi Kashino , Koichi Kanaya
发明人： Hisashi Kashino , Koichi Kanaya
IPC分类号： C30B2516
CPC分类号： C23C16/52 , C30B25/16
摘要： In the process of thin film growth, actual temperature of a substrate is measured and corrected with low cost in short time. With first thin film growth equipment of which a difference between set temperature of a heating source and an actual temperature of the substrate (hereinafter, referred to as temperature characteristic) is known, a first calibration curve representing “thin film growth rate vs. substrate actual temperature” is prepared. Next, thin film growth is conducted at one set temperature T2 with use of second thin film growth equipment whose temperature characteristic is unknown, where a difference from a set temperature T1 reading from the first calibration curve in correspondence to a thin film growth rate G resulting from the thin film growth process is determined. This difference is added to a set temperature T3 in the diffusion controlled temperature region at which the thin film growth is actually performed, making it possible to achieve thin film growth at an accurate substrate surface temperature. The temperature characteristic of the first thin film growth equipment can be known based on a second calibration curve representing “sheet resistance vs. substrate actual temperature” prepared by using a test-use substrate by ion implantation.
摘要翻译：在薄膜生长过程中，在短时间内以低成本测量和校正基板的实际温度。利用第一薄膜生长设备，其中加热源的设定温度与基板的实际温度之间的差异（以下称为温度特性）是已知的，表示“薄膜生长速率对基板实际值”的第一校准曲线温度“。接下来，使用温度特性未知的第二薄膜生长设备在一个设定温度T2下进行薄膜生长，其中与从薄膜生长速率G相应的从第一校准曲线读取的设定温度T1的差异导致从薄膜生长过程确定。该差异被添加到实际进行薄膜生长的扩散控制温度区域的设定温度T3，使得可以在精确的基板表面温度下实现薄膜生长。基于通过使用通过离子注入使用测试用基板制备的表示“薄层电阻与基板实际温度”的第二校准曲线，可以知道第一薄膜生长设备的温度特性。

9. 发明授权

US5228669A Automatic document feeder for an image forming apparatus 失效
标题翻译：用于成像设备的自动送纸器
公开(公告)号：US5228669A
公开(公告)日：1993-07-20
申请号：US763455
申请日：1991-09-20
申请人： Koichi Kanaya
发明人： Koichi Kanaya
IPC分类号： G03G15/00
CPC分类号： G03G15/60
摘要： An automatic document feeder (ADF) for use with an image forming apparatus and freeing the operator from extra work associated with documents discharged after illumination. When the operator intentionally stacks the first page to the last page of documents in this order and sets them on an ADF table face down due to a copy discharge mode which requires the ADF to discharge the last page to the first page in this order face up, the ADF reverses the documents before discharging them. Hence, despite that the ADF discharges the documents from the last page to the first page, it successfully stacks the documents in order of page by turning them over.
摘要翻译：一种与图像形成装置一起使用的自动送纸器（ADF），释放操作者与照明后放出的文件相关的额外工作。当操作员有意地按照这个顺序将第一页堆叠到文档的最后一页时，由于需要ADF将最后一页以最后一页排列到第一页面的复印放电模式，将它们放在ADF表面上。 ADF在卸货前撤销文件。因此，尽管ADF将文档从最后一页排放到第一页，但是通过翻转它们可以按页面顺序堆叠文档。

10. 发明授权

US07615116B2 Method for producing silicon epitaxial wafer and silicon epitaxial wafer 有权
标题翻译：硅外延晶片和硅外延晶片的制造方法
公开(公告)号：US07615116B2
公开(公告)日：2009-11-10
申请号：US10572465
申请日：2004-09-27
申请人： Koichi Kanaya , Tsuyoshi Nishizawa
发明人： Koichi Kanaya , Tsuyoshi Nishizawa
IPC分类号： C30B21/02
CPC分类号： C30B25/02 , C30B25/12 , C30B29/06
摘要： In a vapor phase growth apparatus including a reaction chamber, a susceptor, a lift pin, an upper heating device, and a lower heating device, a heating ratio between the upper heating ratio and the lower heating ratio is adjusted.
摘要翻译：在包括反应室，基座，升降销，上加热装置和下加热装置的气相生长装置中，调节上加热比和下加热比之间的加热比。

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