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1. 发明授权

US5247203A Semiconductor device mounted on a heat sink with an intervening amorphous semiconductor material 失效
标题翻译：在具有干扰的非晶半导体材料的散热器上安装的半导体器件
公开(公告)号：US5247203A
公开(公告)日：1993-09-21
申请号：US649062
申请日：1991-02-01
申请人： Kimio Shigihara , Yutaka Nagai , Toshitaka Aoyagi
发明人： Kimio Shigihara , Yutaka Nagai , Toshitaka Aoyagi
IPC分类号： H01L23/14 , H01L21/28 , H01L21/48 , H01L21/52 , H01L23/36 , H01L23/373 , H01L29/43 , H01S5/00 , H01S5/02 , H01S5/022 , H01S5/042
CPC分类号： H01L23/3738 , H01L21/4882 , H01L2224/45144 , H01L2224/48463 , H01L2224/73265 , H01S5/0021 , H01S5/02272 , H01S5/02484 , H01S5/0425
摘要： A semiconductor device having a semiconductor element and a heat sink radiating heat generated by the semiconductor element includes an amorphous semiconductor film disposed on the heat sink and the semiconductor element disposed on the amorphous semiconductor film. Therefore, the stress applied to the semiconductor element is reduced because of the amorphous semiconductor film. In one structure, an amorphous semiconductor film comprising amorphous silicon or amorphous germanium is sandwiched between first and second metal films and the semiconductor element is bonded to the second metal film. An ohmic contact is made by alloys formed between the amorphous semiconductor film and the first and second metal films.

2. 发明授权

US5161164A Semiconductor laser device 失效
标题翻译：半导体激光器件
公开(公告)号：US5161164A
公开(公告)日：1992-11-03
申请号：US693318
申请日：1991-04-29
申请人： Kimio Shigihara , Yutaka Nagai , Toshitaka Aoyagi
发明人： Kimio Shigihara , Yutaka Nagai , Toshitaka Aoyagi
IPC分类号： H01S5/00 , H01S3/105 , H01S3/107 , H01S5/028 , H01S5/062 , H01S5/14 , H01S5/34
CPC分类号： B82Y20/00 , H01S3/105 , H01S3/107 , H01S5/14 , H01S5/34 , H01S5/028 , H01S5/0285 , H01S5/0622 , H01S5/3418
摘要： A semiconductor laser device includes a semiconductor laser element having a quantum well structure active layer having n levels of quantum states (n

3. 发明授权

US5332695A Method of manufacturing semi conductor device mounted on a heat sink 失效
标题翻译：制造安装在散热片上的半导体器件的方法
公开(公告)号：US5332695A
公开(公告)日：1994-07-26
申请号：US65761
申请日：1993-05-24
申请人： Kimio Shigihara , Yutaka Nagai , Toshitaka Aoyagi
发明人： Kimio Shigihara , Yutaka Nagai , Toshitaka Aoyagi
IPC分类号： H01L23/14 , H01L21/28 , H01L21/48 , H01L21/52 , H01L23/36 , H01L23/373 , H01L29/43 , H01S5/00 , H01S5/02 , H01S5/022 , H01S5/042 , H01L21/60
CPC分类号： H01L23/3738 , H01L21/4882 , H01L2224/45144 , H01L2224/48463 , H01L2224/73265 , H01S5/0021 , H01S5/02272 , H01S5/02484 , H01S5/0425
摘要： A semiconductor device having a semiconductor element and a heat sink radiating heat generated by the semiconductor element incudes an amorphous semiconductor film disposed on the heat sink and the semiconductor element disposed on the amorphous semiconductor film. Therefore, the stress applied to the semiconductor element is reduced because of the amorphous semiconductor film. In one structure, an amorphous semiconductor film comprising amorphous silicon or amorphous germanium is sandwiched between first and second metal films and the semiconductor element is bonded to the second metal film. An ohmic contact is made by alloys formed between the amorphous semiconductor film and the first and second metal films.
摘要翻译：具有半导体元件和由半导体元件产生的辐射热的散热器的半导体器件包括设置在散热器上的非晶半导体膜和设置在非晶半导体膜上的半导体元件。因此，由于非晶半导体膜，施加到半导体元件的应力减小。在一种结构中，包含非晶硅或非晶锗的非晶半导体膜被夹在第一和第二金属膜之间，并且半导体元件被接合到第二金属膜。由非晶半导体膜与第一和第二金属膜之间形成的合金制成欧姆接触。

4. 发明授权

US5177749A Semiconductor laser device 失效
公开(公告)号：US5177749A
公开(公告)日：1993-01-05
申请号：US794503
申请日：1991-11-19
申请人： Kimio Shigihara , Yutaka Nagai , Toshitaka Aoyagi
发明人： Kimio Shigihara , Yutaka Nagai , Toshitaka Aoyagi
IPC分类号： H01S5/00 , H01S3/105 , H01S3/107 , H01S5/028 , H01S5/062 , H01S5/14 , H01S5/34
CPC分类号： B82Y20/00 , H01S3/105 , H01S3/107 , H01S5/14 , H01S5/34 , H01S5/028 , H01S5/0285 , H01S5/0622 , H01S5/3418
摘要： A semiconductor laser device includes a semiconductor laser element having a quantum well structure active layer having n levels of quantum states (n.gtoreq.2) from the first quantum level to the n-th quantum level in which the front facet reflectivity and the rear facet reflectivity are asymmetrical so that oscillation can occur at the n-th quantum level, a reflecting mirror having a reflectivity that causes oscillation of the semiconductor element to occur at a quantum level lower than the n-th quantum level, and a reflecting mirror moving unit for positioning the reflecting mirror in the neighborhood of the front facet or the rear facet of the semiconductor laser element. Therefore, a semiconductor laser device which can oscillate at two or more wavelengths with a simple construction is obtained.

5. 发明授权

US5185287A Method for producing a quantum well structure 失效
标题翻译：生产量子阱结构的方法
公开(公告)号：US5185287A
公开(公告)日：1993-02-09
申请号：US641268
申请日：1991-01-15
申请人： Toshitaka Aoyagi , Kimio Shigihara
发明人： Toshitaka Aoyagi , Kimio Shigihara
IPC分类号： C23C14/32 , C23C14/22 , H01L21/203
CPC分类号： C23C14/221 , H01L21/02395 , H01L21/02463 , H01L21/02546 , H01L21/02631 , Y10S117/917
摘要： A method for producing a box type quantum well structure includes generating ion clusters, linearly accelerating the clusters with an electric field, passing the accelerated cluster ions through a further field perpendicular to the accelerating direction, causing the cluster ions to follow different ion orbits in accordance with the number of constituent atoms of the respective cluster ions, intercepting the cluster ions having a predetermined number of atoms with a substrate arranged in the orbit of the cluster ions having a predetermined number of atoms. A neutral particle shielding plate is provided along a straight line between the substrate and the cluster ion source to prevent neutral particles from flowing toward the substrate. Thereby, GaAs boxes having the same size can be obtained and variations in the quantum effects of the boxes can be reduced.
摘要翻译：一种盒型量子阱结构的制造方法包括：产生离子簇，用电场线性加速簇，使加速的簇离子通过与加速方向垂直的另外的场，使簇离子遵循不同的离子轨道与相应的簇离子的组成原子数目相同，截留具有预定数量原子的簇离子，其中衬底布置在具有预定数量原子的簇离子的轨道中。沿着基板和簇离子源之间的直线设置中性粒子屏蔽板，以防止中性粒子流向基板。因此，可以获得具有相同尺寸的GaAs盒，并且可以减小盒的量子效应的变化。

6. 发明授权

US5170458A Optical fiber light-amplifier system 失效
标题翻译：光纤光放大器系统
公开(公告)号：US5170458A
公开(公告)日：1992-12-08
申请号：US763215
申请日：1991-09-20
申请人： Toshitaka Aoyagi , Kimio Shigihara
发明人： Toshitaka Aoyagi , Kimio Shigihara
IPC分类号： G02B6/00 , G02B6/02 , G02F1/35 , H01S3/06 , H01S3/094 , H01S5/00
CPC分类号： H01S3/094003 , H01S3/094007 , H01S3/094019 , H01S3/094069
摘要： An improved optical fiber light-amplifier includes an amplifier optical fiber with a center core through which signal light is propagated, and a pumping light generating device which applies pumping light obliquely to the optical fiber. Pumping light is repetitively reflected within the optical fiber from portions of the optical fiber other than the interface between the core and regions surrounding the core. While pumping light is propagated through the fiber, it is absorbed by and excites the center core to amplify signal light being propagated through the optical fiber.
摘要翻译：一种改进的光纤光放大器包括：具有通过信号光传播的中心磁芯的放大器光纤;以及泵浦光产生装置，其向所述光纤倾斜地施加泵浦光。泵浦光从光纤的部分反复地反射到光纤之外，而不是核心和围绕芯的区域之间的界面。当泵浦光通过光纤传播时，其被中心纤芯吸收并激发，以放大通过光纤传播的信号光。

7. 发明授权

US5282219A Semiconductor laser structure having a non-reflection film 失效
标题翻译：具有非反射膜的半导体激光器结构
公开(公告)号：US5282219A
公开(公告)日：1994-01-25
申请号：US984101
申请日：1992-12-01
申请人： Kimio Shigihara , Toshitaka Aoyagi
发明人： Kimio Shigihara , Toshitaka Aoyagi
IPC分类号： H01L33/10 , H01L33/46 , H01S3/082 , H01S5/00 , H01S5/028 , H01S3/19
CPC分类号： H01S5/028
摘要： A semiconductor optical device includes a semiconductor laser having an effective refractive index n.sub.c, a first film having a refractive index n.sub.1 and a thickness d.sub.1, a second film having a refractive index n.sub.2 and a thickness d.sub.2, and a third film having a refractive index n.sub.3 and a thickness d.sub.3. The first to third films are successively disposed on a facet of the semiconductor laser. In this structure, the refractive indices and thicknesses of the first to third films are determined so that a characteristic matrix Xa of the three films is equal to a characteristic matrix Y of a single film whose refractive index n.sub.f is the square root of the effective refractive index n.sub.c of the semiconductor laser and whose thickness is obtained by dividing an oscillation wavelength .lambda. of the semiconductor laser by 4n.sub.f as represented by the following equation ##EQU1## where .phi.1=2.pi.n.sub.1 d.sub.1 /.lambda., .phi.2=2.pi.n.sub.2 d.sub.2 /.lambda., and .phi.3=2.pi.n.sub.3 d.sub.3 /.lambda.. Therefore, a non-reflection film having no reflectivity at the oscillation wavelength of the semiconductor laser is attained, and the production of the non-reflection film is simplified.
摘要翻译：半导体光学器件包括具有有效折射率nc的半导体激光器，具有折射率n1和厚度d1的第一膜，具有折射率n2和厚度d2的第二膜和具有折射率n3的第三膜和厚度d3。第一至第三膜依次设置在半导体激光器的一面上。在该结构中，确定第一至第三膜的折射率和厚度，使得三个膜的特征矩阵Xa等于折射率nf为有效折射率的平方根的单个膜的特征矩阵Y （*化学结构*）（*化学结构*）（*化学结构*）表示的半导体激光器的折射率nc，其厚度通过将半导体激光器的振荡波长（λ）除以4nf而获得，（phi）1 = 2（pi）n1d1 /（λ），（phi）2 = 2（pi）n2d2 /（lambda）和（phi）3 = 2（pi）n3d3 /（λ）。因此，获得了在半导体激光器的振荡波长下没有反射率的非反射膜，并且非反射膜的制造被简化。

8. 发明授权

US5185290A Method of coating facet of semiconductor optical element 失效
标题翻译：半导体光学元件涂层方法
公开(公告)号：US5185290A
公开(公告)日：1993-02-09
申请号：US561720
申请日：1990-08-01
申请人： Toshitaka Aoyagi , Kimio Shigihara
发明人： Toshitaka Aoyagi , Kimio Shigihara
IPC分类号： H01S5/00 , H01S5/02 , H01S5/028 , H01S5/40
CPC分类号： H01L33/44 , H01S5/028 , H01S5/4031 , H01S2301/166 , H01S5/0203 , H01S5/0286 , Y10S148/095 , Y10S148/099
摘要： A method of selectively coating one of two spaced apart facets of respective light-emitting regions on the same surface of a semiconductor device formed in a semiconductor wafer includes forming at least one first groove in a wafer and forming at least one second groove in the wafer intersecting the first groove, exposing light-emitting region facets on a side wall surface of the second groove. A stream of an evaporated coating material is directed across an edge, formed by the intersection of a side wall surface of the second groove with the first groove, at an angle relative to the wafer surface so that the edge shadows one of the light-emitting region facets but not the other. After the coating process, the wafer is divided into individual devices that may include adjacent, differently coated light-emitting region facets. The invention avoids a mechanical mask alignment step by employing in the coating process first grooves that are self aligning relative to the light-emitting region facets.
摘要翻译：在形成在半导体晶片中的半导体器件的相同表面上选择性地涂覆各个发光区域的两个间隔开的面之一的方法包括在晶片中形成至少一个第一凹槽并在晶片中形成至少一个第二凹槽与第一凹槽相交，在第二凹槽的侧壁表面上露出发光区域面。蒸发的涂层材料的流被引导穿过由第二凹槽的侧壁表面与第一凹槽相交的边缘，以相对于晶片表面成一角度形成，使得边缘阴影发光区域方面，但不是另一个。在涂覆过程之后，晶片被分成可以包括相邻的，不同地涂覆的发光区域面的各个装置。本发明通过在涂覆工艺中采用相对于发光区域面进行自对准的第一凹槽来避免机械掩模对准步骤。

9. 发明授权

US08111726B2 Semiconductor laser device 有权
标题翻译：半导体激光器件
公开(公告)号：US08111726B2
公开(公告)日：2012-02-07
申请号：US12535779
申请日：2009-08-05
申请人： Kimio Shigihara
发明人： Kimio Shigihara
IPC分类号： H01S5/00
CPC分类号： H01S5/22 , B82Y20/00 , H01S5/2031 , H01S5/305 , H01S5/34313 , H01S5/34326 , H01S5/34333
摘要： A semiconductor laser device includes: an n-type cladding layer, a p-type cladding layer, an active layer located between the n-type cladding layer and the p-type cladding layer, an n-side guiding layer located on the same side of the active layer as the n-type cladding layer, and a p-side guiding layer located on the same side of the active layer as the p-type cladding layer. The n-side guiding layer, the active layer, and the p-side guiding layer are undoped or substantially undoped. The sum of the thicknesses of the n-side guiding layer, the active layer, and the p-side guiding layer is not less than 0.5 times the lasing wavelength of the semiconductor laser device and is not more than 2 μm. The p-side guiding layer is thinner and has a lower refractive index than the n-side guiding layer.
摘要翻译：半导体激光装置包括：n型包层，p型包层，位于n型包层和p型包层之间的有源层，位于同一侧的n侧引导层作为n型包覆层的有源层，以及位于与p型覆层相同的有源层的一侧的p侧引导层。 n侧引导层，有源层和p侧引导层是未掺杂的或基本上未掺杂的。 n侧引导层，有源层和p侧引导层的厚度之和不小于半导体激光器件的激光波长的0.5倍，不大于2μm。 p侧引导层比n侧引导层更薄，折射率低。

10. 发明授权

US07756179B2 Semiconductor laser apparatus 有权
标题翻译：半导体激光装置
公开(公告)号：US07756179B2
公开(公告)日：2010-07-13
申请号：US12031027
申请日：2008-02-14
申请人： Kimio Shigihara
发明人： Kimio Shigihara
IPC分类号： H01S5/00
CPC分类号： H01S5/2031 , H01S5/2063 , H01S5/305 , H01S5/3213 , H01S5/32316 , H01S5/32325 , H01S5/32333
摘要： A semiconductor laser apparatus can improve electric conversion efficiency to a satisfactory extent. The apparatus includes an n-type cladding layer, an n-type cladding layer side guide layer, an active layer, a p-type cladding layer side guide layer, and a p-type cladding layer, wherein electrons and holes are injected into the active layer, transverse to the active layer, through the n-type cladding layer side guide layer and the p-type cladding layer side guide layer. The p-type cladding layer side guide layer is thinner than the n-type cladding layer side guide layer to position the active layer closer to the p-type cladding layer, and, at the same time, the refractive index of the p-type cladding layer side guide layer is higher than the refractive index of the n-type cladding layer side guide layer.
摘要翻译：半导体激光装置可以将电转换效率提高到令人满意的程度。该装置包括n型包覆层，n型包层侧引导层，有源层，p型包层侧引导层和p型包层，其中电子和空穴注入到通过n型包层侧引导层和p型包层侧引导层横向于有源层的有源层。 p型包层侧引导层比n型包层侧引导层薄，使活性层更靠近p型包覆层，同时p型包层侧引导层的折射率包覆层侧引导层比n型包层侧引导层的折射率高。

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