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1. 发明授权

US09343871B1 Facet on a gallium and nitrogen containing laser diode 有权
标题翻译：含氮和氮的激光二极管的方面
公开(公告)号：US09343871B1
公开(公告)日：2016-05-17
申请号：US13850187
申请日：2013-03-25
申请人： SORAA, INC.
发明人： James W. Raring , Hua Huang
IPC分类号： H01S5/028
CPC分类号： H01S5/0287 , H01S5/0203 , H01S5/028 , H01S5/0282 , H01S5/0285 , H01S5/2009 , H01S5/22 , H01S5/3202 , H01S5/34333
摘要： Nonpolar or semipolar laser diode technology incorporating etched facet mirror formation and conventional optical coating layer techniques for reflectivity modification to enable a method for ultra-high catastrophic optical mirror damage thresholds for high power laser diodes are disclosed.
摘要翻译：公开了非极性或半极性激光二极管技术，其包括蚀刻面镜形成和用于反射率修改的常规光学涂层技术，以实现用于大功率激光二极管的超高灾难性光学镜损伤阈值的方法。

2. 发明授权

US09276381B2 Quantum cascade laser 有权
标题翻译：量子级联激光器
公开(公告)号：US09276381B2
公开(公告)日：2016-03-01
申请号：US14520500
申请日：2014-10-22
申请人： HAMAMATSU PHOTONICS K.K.
发明人： Atsushi Sugiyama , Tadataka Edamura , Naota Akikusa
IPC分类号： H01S5/34 , H01S5/028 , H01S5/02 , H01S5/22
CPC分类号： H01S5/3401 , H01S5/0207 , H01S5/028 , H01S5/0281 , H01S5/0285 , H01S5/0286 , H01S5/0287 , H01S5/22 , H01S5/34
摘要： A quantum cascade laser includes a semiconductor substrate, and an active layer being provided on the substrate, and having a cascade structure in which quantum well emission layers and injection layers are alternately laminated, and the laser has a base portion including the substrate, and a stripe-shaped ridge portion including the active layer. Further, a reflection control film is formed from a ridge end face over a base end face on an end face in a resonating direction of the laser, and, on the base end face, for a second side and a third side adjacent to a first side on the ridge portion side of the base end face, and a fourth side facing the first side, the reflection control film is formed on a region other than regions near those three sides with predetermined widths.
摘要翻译：量子级联激光器包括半导体衬底，并且有源层设置在衬底上，并且具有量子阱发射层和注入层交替层叠的级联结构，并且激光器具有包括衬底的基部，以及包括活性层的条纹状脊部。此外，在激光的共振方向的端面上的基端面上的脊端面形成反射控制膜，并且在基端面上，与第一侧面相邻的第二侧面和第三侧面在基端面的脊部侧的侧面以及面向第一侧的第四面，反射控制膜形成在除了三边以外的区域以外的区域上，具有预定的宽度。

3. 发明申请

US20150117484A1 QUANTUM CASCADE LASER 有权
标题翻译：量子CASCADE激光
公开(公告)号：US20150117484A1
公开(公告)日：2015-04-30
申请号：US14520500
申请日：2014-10-22
申请人： HAMAMATSU PHOTONICS K.K.
发明人： Atsushi SUGIYAMA , Tadataka EDAMURA , Naota AKIKUSA
IPC分类号： H01S5/34
CPC分类号： H01S5/3401 , H01S5/0207 , H01S5/028 , H01S5/0281 , H01S5/0285 , H01S5/0286 , H01S5/0287 , H01S5/22 , H01S5/34
摘要： A quantum cascade laser includes a semiconductor substrate, and an active layer being provided on the substrate, and having a cascade structure in which quantum well emission layers and injection layers are alternately laminated, and the laser has a base portion including the substrate, and a stripe-shaped ridge portion including the active layer. Further, a reflection control film is formed from a ridge end face over a base end face on an end face in a resonating direction of the laser, and, on the base end face, for a second side and a third side adjacent to a first side on the ridge portion side of the base end face, and a fourth side facing the first side, the reflection control film is formed on a region other than regions near those three sides with predetermined widths.
摘要翻译：量子级联激光器包括半导体衬底，并且有源层设置在衬底上，并且具有量子阱发射层和注入层交替层叠的级联结构，并且激光器具有包括衬底的基部，以及包括活性层的条纹状脊部。此外，在激光的共振方向的端面上的基端面上的脊端面形成反射控制膜，并且在基端面上，与第一侧面相邻的第二侧面和第三侧面在基端面的脊部侧的侧面以及面向第一侧的第四面，反射控制膜形成在除了三边以外的区域以外的区域上，具有预定的宽度。

4. 发明申请

US20060171440A1 Apparatus for generating improved laser beam 审中-公开
标题翻译：用于产生改进的激光束的装置
公开(公告)号：US20060171440A1
公开(公告)日：2006-08-03
申请号：US10548373
申请日：2004-03-14
申请人： Nikolai Ledentsov , Vitaly Shchukin
发明人： Nikolai Ledentsov , Vitaly Shchukin
IPC分类号： H01S3/08
CPC分类号： G02B5/26 , G02B5/285 , H01S5/028 , H01S5/0281 , H01S5/0285 , H01S5/0425 , H01S5/0655 , H01S5/105 , H01S5/1833 , H01S5/18341 , H01S5/18358 , H01S5/18369 , H01S5/18377 , H01S5/2027 , H01S5/32341
摘要： A selective reflector, for selectively preventing reflection of light passing therethrough. The selective reflector comprising at least one layer characterized by an angle-dependent reflectivity function. The angle-dependent reflectivity function being decreasing upon at least one interval of increasing impinging angle of the light on a surface of the at least one layer, such that when said impinging angle is within a predetermined range, the reflection of light is substantially prevented.
摘要翻译：选择性反射器，用于选择性地防止穿过其中的光的反射。所述选择反射器包括至少一层，其特征在于角度反射函数。所述角度反射率函数在所述至少一层的表面上的光的增加的角度的至少一个间隔的范围内减小，使得当所述入射角在预定范围内时，基本上防止了光的反射。

5. 发明授权

US5177749A Semiconductor laser device 失效
公开(公告)号：US5177749A
公开(公告)日：1993-01-05
申请号：US794503
申请日：1991-11-19
申请人： Kimio Shigihara , Yutaka Nagai , Toshitaka Aoyagi
发明人： Kimio Shigihara , Yutaka Nagai , Toshitaka Aoyagi
IPC分类号： H01S5/00 , H01S3/105 , H01S3/107 , H01S5/028 , H01S5/062 , H01S5/14 , H01S5/34
CPC分类号： B82Y20/00 , H01S3/105 , H01S3/107 , H01S5/14 , H01S5/34 , H01S5/028 , H01S5/0285 , H01S5/0622 , H01S5/3418
摘要： A semiconductor laser device includes a semiconductor laser element having a quantum well structure active layer having n levels of quantum states (n.gtoreq.2) from the first quantum level to the n-th quantum level in which the front facet reflectivity and the rear facet reflectivity are asymmetrical so that oscillation can occur at the n-th quantum level, a reflecting mirror having a reflectivity that causes oscillation of the semiconductor element to occur at a quantum level lower than the n-th quantum level, and a reflecting mirror moving unit for positioning the reflecting mirror in the neighborhood of the front facet or the rear facet of the semiconductor laser element. Therefore, a semiconductor laser device which can oscillate at two or more wavelengths with a simple construction is obtained.

6. 发明申请

US20180331505A1 SEMICONDUCTOR LASER ELEMENT AND METHOD OF MANUFACTURING THE SAME 审中-公开
公开(公告)号：US20180331505A1
公开(公告)日：2018-11-15
申请号：US15975537
申请日：2018-05-09
申请人： NICHIA CORPORATION
发明人： Masanao OCHIAI
IPC分类号： H01S5/343 , H01S5/183 , H01S5/02 , H01S5/042 , H01S5/028 , H01S5/22
CPC分类号： H01S5/0285 , H01S5/0014 , H01S5/0202 , H01S5/0213 , H01S5/0287 , H01S5/0425 , H01S5/18369 , H01S5/2086 , H01S5/22 , H01S5/34333
摘要： A method of manufacturing a semiconductor laser element includes: providing a nitride semiconductor structure with a target emission wavelength λo, the nitride semiconductor structure having a light emission-side surface and a light reflection-side surface; forming an emission-side mirror on the light emission-side surface; and forming a reflection-side mirror on the light reflection-side surface. The semiconductor laser element has an actual wavelength λa, which is 500 nm or more and is in a range of λo±X nm (5≤X≤15). A reflectance of the emission-side mirror is lower than a reflectance of the reflection-side mirror and increases in accordance with an increase in wavelength in a range of λo±X nm.

7. 发明申请

US20150180210A1 SEMICONDUCTOR ARRANGEMENT AND FORMATION THEREOF 有权
标题翻译：半导体布置及其形成
公开(公告)号：US20150180210A1
公开(公告)日：2015-06-25
申请号：US14133699
申请日：2013-12-19
申请人： Taiwan Semiconductor Manufacturing Company Limited
发明人： Hung-Chang Yu , Ying-Hao Kuo , Kai-Chun Lin , Yue-Der Chih
IPC分类号： H01S5/30 , H04B10/43 , H01L31/18 , H01S5/026 , H01S5/42
CPC分类号： H04B10/43 , G02B6/12002 , G02B6/12004 , G02B6/1226 , G02B6/34 , G02F1/025 , G02F2001/0157 , H01L21/30604 , H01L23/3171 , H01L27/0688 , H01L29/0847 , H01L29/66477 , H01L31/112 , H01S5/021 , H01S5/026 , H01S5/0261 , H01S5/0265 , H01S5/0285 , H01S5/183 , H01S5/18302 , H01S5/18361 , H01S5/3027
摘要： A semiconductor arrangement and a method of forming the same are described. A semiconductor arrangement includes a first layer including a first optical transceiver and a second layer including a second optical transceiver. A first serializer/deserializer (SerDes) is connected to the first optical transceiver and a second SerDes is connected to the second optical transceiver. The SerDes converts parallel data input into serial data output including a clock signal that the first transceiver transmits to the second transceiver. The semiconductor arrangement has a lower area penalty than traditional intra-layer communication arrangements that do not use optics for alignment, and mitigates alignment issues associated with conventional techniques.
摘要翻译：对半导体装置及其形成方法进行说明。半导体装置包括包括第一光收发器的第一层和包括第二光收发器的第二层。第一个串行器/解串器（SerDes）连接到第一个光收发器，第二个SerDes连接到第二个光收发器。 SerDes将并行数据输入转换为串行数据输出，包括第一个收发器向第二个收发器发送的时钟信号。半导体布置具有比不使用光学器件对准的传统层内通信布置更低的面积损失，并且减轻与常规技术相关联的对准问题。

8. 发明申请

US20130208749A1 SUPERLUMINESCENT DIODE AND OPTICAL COHERENCE TOMOGRAPHY APPARATUS INCLUDING THE SUPERLUMINESCENT DIODE 有权
标题翻译：超亮度二极管和光学相干测量仪器，包括超级二极管
公开(公告)号：US20130208749A1
公开(公告)日：2013-08-15
申请号：US13720777
申请日：2012-12-19
申请人： CANON KABUSHIKI KAISHA
发明人： Takeshi Uchida
IPC分类号： H01S5/34
CPC分类号： H01S5/34 , G01N21/4795 , H01L33/0045 , H01L33/10 , H01L33/20 , H01S5/028 , H01S5/0282 , H01S5/0285
摘要： A superluminescent diode which amplifies light through stimulated amplification and outputs emitted beams from one of edges at two ends includes a cladding layer of a first conductivity type formed on a semiconductor substrate, an active layer formed on the cladding layer of the first conductivity type, a cladding layer of a second conductivity type formed on the active layer, and a multilayer film formed at the other edge opposite to the one edge that emits the beams, reflectance of which has wavelength dependence, and a spectral shape of the emitted beams output from the one edge is controllable by the multilayer film.
摘要翻译：通过受激放大放大光并从两端的一个边缘输出发射光束的超发光二极管包括形成在半导体衬底上的第一导电类型的覆层，形成在第一导电类型的包覆层上的有源层，形成在有源层上的第二导电类型的覆层，以及形成在与发射波长的一个边缘相反的另一边缘处的多层膜，其反射率具有波长依赖性，以及从该边缘输出的发射光束的光谱形状一个边缘可由多层膜控制。

9. 发明授权

US06801555B1 Lasing semiconductor optical amplifier with output power monitor and control 失效
标题翻译：具有输出功率监控和控制的激光半导体光放大器
公开(公告)号：US06801555B1
公开(公告)日：2004-10-05
申请号：US10092455
申请日：2002-03-06
申请人： Sol P. DiJaili , Jeffrey D. Walker
发明人： Sol P. DiJaili , Jeffrey D. Walker
IPC分类号： H01S300
CPC分类号： H01S5/18311 , H01S5/0285 , H01S5/0622 , H01S5/0683 , H01S5/1032 , H01S5/2009 , H01S5/5072
摘要： An optical signal power monitoring and control system is described. The system comprises at least one lasing SOA that receives, amplifies, and outputs the optical signal. During the signal amplification, a ballast laser signal is output through a substrate of the lasing SOA. This ballast laser signal is indicative of the output power of the lasing SOA. At least one detector converts the ballast laser signal to an electrical signal and transmits this electrical signal to a power monitor circuit. Using the electrical signal, the power monitor determines the output power of the lasing SOA. A pump control adjusts the rate at which the lasing SOA is pumped in order to change the saturation level of the lasing SOA and its corresponding power output ceiling. According to one embodiment, the power monitor identifies when the lasing SOA is approaching saturation or is saturated. If the lasing SOA is saturated or approaching saturation, the pump control increases its pumping rate causing the saturation level of the lasing SOA to rise. As a result, the lasing SOA is provided protection from saturation.
摘要翻译：描述了光信号功率监控系统。该系统包括接收，放大和输出光信号的至少一个激光器SOA。在信号放大期间，镇流器激光信号通过激光器SOA的衬底输出。该镇流器激光信号表示激光器的输出功率。至少一个检测器将镇流器激光信号转换为电信号，并将该电信号传输到功率监视器电路。使用电信号，功率监视器确定激光器的输出功率。泵控制器调整激光器的泵浦泵送速率，以便改变激光器的饱和度和相应的功率输出上限。根据一个实施例，功率监视器识别激光器SOA何时接近饱和或饱和。如果激光器的SOA饱和或接近饱和，泵控制会增加其泵浦速率，导致激光器SOA的饱和水平上升。因此，提供了保护免受饱和影响的激光SOA。

10. 发明授权

US06621836B2 Tunable multi-frequency vertical cavity surface emitting laser 失效
公开(公告)号：US06621836B2
公开(公告)日：2003-09-16
申请号：US09820456
申请日：2001-03-29
申请人： Francis A. Karwacki
发明人： Francis A. Karwacki
IPC分类号： H01S310
CPC分类号： H01S5/18341 , H01S5/0285 , H01S5/18302 , H01S5/18361 , H01S5/4087 , H01S5/423
摘要： A tunable Vertical Cavity Surface Emitting Laser (VCSEL) is disclosed that produces N frequencies of visible light. The VCSEL comprises an array of quantum wells (QWMs) which replaces one of the normally present Distributive Bragg Reflectors (DBR) at one end of a laser cavity of the VCSEL. These N independent QWMs produce N independent frequency in the laser cavity of the VCSEL device.

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