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    • 1. 发明授权
    • Pedestal bubble domain chip and processes for making same
    • 基座泡泡域芯片及其制作工艺
    • US4187553A
    • 1980-02-05
    • US863829
    • 1977-12-23
    • Kie Y. AhnMitchell S. CohenJohn V. PowersLung-jo Tao
    • Kie Y. AhnMitchell S. CohenJohn V. PowersLung-jo Tao
    • G11C11/14G11C19/08H01F10/06H01F41/34H01F10/02
    • G11C19/085G11C19/0841H01F10/06H01F41/34Y10S428/90Y10S428/928Y10T428/1291
    • An improved magnetic bubble domain chip and processes for making the chip are described. The chip is comprised of a magnetic bubble domain film in which small bubble domains can be moved, and overlying layers of metallurgy. The layer of metallurgy closest to the bubble film is an electrically conductive layer having apertures (or recesses) therein. This layer is patterned to provide current carrying conductors. The next overlayer is a layer of magnetic material having in-plane magnetization which is patterned to provide the propagation elements used to move the bubble domains. In a particular embodiment, the magnetic layer is comprised of a magnetically soft material, such as permalloy. The chip is characterized by the provision of insulating pedestals located in the apertures of the conductive layer. These insulating pedestals are located in the regions of the chip used for sensing (and/or bubble generation). That is, they take the place of the thick conductive material in those areas of the chip. The sensor and bubble generators are usually portions of the in-plane magnetic layer. If the height of the insulating pedestals is the same as the height of the conductive layer, planarization is achieved and each overlayer lies in a single plane, where the planes are parallel to one another. However, the pedestal can be of any desired height. This chip is particularly advantageous for use with bubble domains having diameters of about 1 micron and less, since the pedestal magnetic chip can be provided by single level masking techniques in which only a single critical masking step is required. The insulating pedestal can be formed prior to deposition of the current carrying conductive layer, or subsequent to deposition of this layer.
    • 描述了改进的磁泡区域芯片和制造芯片的工艺。 该芯片由可以移动小气泡区域的磁性气泡区域薄膜和上覆的冶金层构成。 最靠近气泡膜的冶金层是其中具有孔(或凹槽)的导电层。 图案化该层以提供载流导体。 下一个覆盖层是具有面内磁化的磁性材料层,其被图案化以提供用于移动气泡畴的传播元件。 在一个具体实施例中,磁性层由诸如坡莫合金之类的软磁材料构成。 芯片的特征在于设置位于导电层的孔中的绝缘基座。 这些绝缘基座位于用于感测(和/或气泡产生)的芯片的区域中。 也就是说,它们代替了芯片的那些区域中的厚导电材料。 传感器和气泡发生器通常是面内磁性层的一部分。 如果绝缘基座的高度与导电层的高度相同,则实现平坦化,并且每个覆盖层位于平面彼此平行的单个平面中。 然而,基座可以是任何期望的高度。 该芯片对于直径约为1微米和更小的气泡区域是特别有利的,因为可以通过单层屏蔽技术提供基座磁性芯片,其中仅需要单个临界屏蔽步骤。 绝缘基座可以在沉积载流导电层之前或之后沉积该层形成。
    • 9. 发明授权
    • Bubble domain transfer switches
    • 泡泡域转移开关
    • US4174540A
    • 1979-11-13
    • US811734
    • 1977-06-30
    • Mitchell S. CohenEmerson W. Pugh
    • Mitchell S. CohenEmerson W. Pugh
    • G11C11/14G11C19/08
    • G11C19/0883G11C19/085
    • These improved current controlled transfer switches are particularly useful for changing the propagation path of very small bubble domains without requiring large amounts of transfer current. The underlying principle is that the transfer operation occurs when the magnitude of the magnetic drive field used to move bubble domains has diminished to a small value, or is zero. This means that the magnetic field due to current in the switch does not have to overcome the effect of the drive field and therefore can be very small while still being effective. This is termed a "start/stop" operation and in one embodiment, current-assisted transfer is achieved by utilizing a change in the sequence of the magnetic drive field (generally an in-plane rotating field) at the time of transfer. In another embodiment, a continuous "three-quadrant" magnetic drive field is used instead of the customary 360.degree. rotating drive field. This three-quadrant field cycle is also the normal cycle for bubble storage operations and bubble motion elsewhere in the magnetic circuit is not disturbed by the switching operation because all devices are designed to operate with only one type of drive field cycle, which is the three-quadrant cycle. Switches operating in accordance with these principles do not have to have a particular design; in fact, several different designs are illustrated.
    • 这些改进的电流控制转移开关特别适用于改变非常小的气泡域的传播路径,而不需要大量的转移电流。 基本原理是当用于移动气泡畴的磁驱动场的幅度已经减小到一个较小的值或者为零时,发生转移操作。 这意味着由开关中的电流引起的磁场不必克服驱动场的影响,因此在仍然有效的情况下可以非常小。 这被称为“启动/停止”操作,并且在一个实施例中,通过利用在传送时的磁驱动场(通常为平面内旋转场)的顺序的改变来实现电流辅助传送。 在另一个实施例中,使用连续的“三象限”磁驱动场代替常规的360度旋转驱动场。 这种三象限场周期也是气泡存储操作的正常循环,并且磁路中的其他地方的气泡运动不受开关操作的干扰,因为所有器件被设计为仅使用一种类型的驱动场周期来操作,这是三个 适应周期。 根据这些原则操作的开关不必具有特定的设计; 实际上,示出了几种不同的设计。