专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20090228132A1 METHOD AND APPARATUS FOR CONTROLLING STRESSED LAYER GATE PROXIMITY 审中-公开
标题翻译：用于控制受力层门槛的方法和装置
公开(公告)号：US20090228132A1
公开(公告)日：2009-09-10
申请号：US12045081
申请日：2008-03-10
申请人： Kevin R. Lensing , Alok Vaid , Rohit Pal
发明人： Kevin R. Lensing , Alok Vaid , Rohit Pal
IPC分类号： G06F17/00
CPC分类号： H01L22/12 , H01L22/20 , H01L29/165 , H01L29/66636 , H01L29/78 , H01L29/7848
摘要： A method includes receiving a performance distribution for a plurality of devices to be fabricated in a semiconductor process flow. A performance target for a particular device is specified based on the performance distribution. A stressed material is formed in a recess adjacent a gate electrode of a transistor in the particular device in accordance with at least one operating recipe. The recess is spaced from the gate electrode by a gate proximity distance. A target value for the gate proximity distance is determined based on the performance target. At least one parameter of the operating recipe is determined based on the target value for the gate proximity distance.
摘要翻译：一种方法包括接收要在半导体工艺流程中制造的多个器件的性能分布。基于性能分布指定特定设备的性能目标。根据至少一个操作配方，在与特定装置中的晶体管的栅电极相邻的凹部中形成应力材料。凹槽与栅电极隔开一个栅极接近距离。基于性能目标确定门接近距离的目标值。基于门接近距离的目标值确定操作配方的至少一个参数。

2. 发明授权

US08149384B2 Method and apparatus for extracting dose and focus from critical dimension data 失效
标题翻译：从关键尺寸数据中提取剂量和重点的方法和装置
公开(公告)号：US08149384B2
公开(公告)日：2012-04-03
申请号：US11958086
申请日：2007-12-17
申请人： Siddharth Chauhan , Kevin R. Lensing , James Broc Stirton
发明人： Siddharth Chauhan , Kevin R. Lensing , James Broc Stirton
IPC分类号： G03B27/52
CPC分类号： G03B27/42 , G03F7/70491 , G03F7/70616
摘要： A method for monitoring a photolithography system includes defining a model of the photolithography system for modeling top and bottom critical dimension data associated with features formed by the photolithography system as a function of dose and focus. A library of model inversions is generated for different combinations of top and bottom critical dimension values. Each entry in the library specifies a dose value and a focus value associated with a particular combination of top and bottom critical dimension values. A top critical dimension measurement and a bottom critical dimension measurement of a feature formed by the photolithography system using a commanded dose parameter and a commanded focus parameter are received. The library is accessed using the top and bottom critical dimension measurements to generate values for a received dose parameter and the received focus parameter. The received dose and focus parameters are compared to the commanded dose and focus parameters to characterize the photolithography system.
摘要翻译：用于监测光刻系统的方法包括定义光刻系统的模型，用于模拟与由光刻系统形成的特征相关联的顶部和底部临界尺寸数据作为剂量和焦点的函数。针对顶部和底部关键尺寸值的不同组合生成模型反演库。库中的每个条目指定与顶部和底部关键尺寸值的特定组合相关联的剂量值和焦点值。接收由光刻系统使用指令剂量参数和命令焦点参数形成的特征的顶部关键尺寸测量和底部临界尺寸测量。使用顶部和底部关键尺寸测量来访问库，以生成接收剂量参数和接收到的焦点参数的值。将接收的剂量和聚焦参数与命令的剂量和聚焦参数进行比较，以表征光刻系统。

3. 发明授权

US07822567B2 Method and apparatus for implementing scaled device tests 失效
标题翻译：用于实现缩放设备测试的方法和设备
公开(公告)号：US07822567B2
公开(公告)日：2010-10-26
申请号：US11771467
申请日：2007-06-29
申请人： Kevin R. Lensing , Michael G. McIntyre
发明人： Kevin R. Lensing , Michael G. McIntyre
IPC分类号： G01N37/00 , G01R31/28
CPC分类号： G01R31/2894 , G01R31/31707
摘要： A method includes defining a hierarchy of test routines in a test program for testing integrated circuit devices. A first device is tested at a first screening level in the hierarchy. The first device is tested at a second detailed level in the hierarchy responsive to the first device failing the testing at the first screening level.
摘要翻译：一种方法包括在用于测试集成电路设备的测试程序中定义测试例程的层级。第一个设备在层次结构中的第一个筛选级别进行测试。第一个设备在层次结构中的第二个详细级别进行测试，响应于第一个设备在第一个筛选级别的测试失败。

4. 发明申请

US20090144692A1 METHOD AND APPARATUS FOR MONITORING OPTICAL PROXIMITY CORRECTION PERFORMANCE 审中-公开
标题翻译：用于监测光学近似校正性能的方法和装置
公开(公告)号：US20090144692A1
公开(公告)日：2009-06-04
申请号：US11948151
申请日：2007-11-30
申请人： JASON P. CAIN , Kevin R. Lensing , Bhanwar Singh , Luigi Capodieci , Cyrus E. Tabery
发明人： JASON P. CAIN , Kevin R. Lensing , Bhanwar Singh , Luigi Capodieci , Cyrus E. Tabery
IPC分类号： G06F17/50
CPC分类号： G03F1/36 , G03F1/68
摘要： A method includes specifying a plurality of optical proximity correction metrology sites on a wafer. Metrology data is collected from at least a subset of the metrology sites. Data values are predicted for the subset of the metrology sites using an optical proximity correction design model. The collected metrology data is compared to the predicted data values to generate an optical proximity correction metric. A problem condition associated with the optical proximity correction design model is identified based on the optical proximity correction metric.
摘要翻译：一种方法包括在晶片上指定多个光学邻近校正度量位置。计量学数据是从至少一个计量站点子集收集的。使用光学邻近校正设计模型为量测站点的子集预测数据值。将收集的测量数据与预测的数据值进行比较以产生光学邻近度校正度量。基于光学邻近度校正度量来识别与光学接近校正设计模型相关联的问题状况。

5. 发明授权

US07502702B1 Method and apparatus for dynamic adjustment of sensor and/or metrology sensitivities 有权
标题翻译：用于动态调节传感器和/或计量灵敏度的方法和装置
公开(公告)号：US07502702B1
公开(公告)日：2009-03-10
申请号：US11221078
申请日：2005-09-07
申请人： Richard J. Markle , Christopher A. Bode , Kevin R. Lensing
发明人： Richard J. Markle , Christopher A. Bode , Kevin R. Lensing
IPC分类号： G01D18/00
CPC分类号： G01D18/00
摘要： The present invention provides a method and apparatus for dynamic adjustment of sensor and/or metrology sensitivities. The method includes accessing measurement information provided by a first measurement device and modifying a sensitivity of a second measurement device based on the measurement information provided by the first measurement device.
摘要翻译：本发明提供一种用于动态调节传感器和/或计量灵敏度的方法和装置。该方法包括访问由第一测量装置提供的测量信息，并且基于由第一测量装置提供的测量信息来修改第二测量装置的灵敏度。

6. 发明授权

US06785009B1 Method of using high yielding spectra scatterometry measurements to control semiconductor manufacturing processes, and systems for accomplishing same 有权
标题翻译：使用高产量光谱散射测量来控制半导体制造工艺的方法以及用于实现其的系统
公开(公告)号：US06785009B1
公开(公告)日：2004-08-31
申请号：US10084987
申请日：2002-02-28
申请人： James Broc Stirton , Kevin R. Lensing , Hormuzdiar E. Nariman , Steven P. Reeves
发明人： James Broc Stirton , Kevin R. Lensing , Hormuzdiar E. Nariman , Steven P. Reeves
IPC分类号： G01B1114
CPC分类号： G01N21/956 , G01N21/4788 , H01L22/12 , H01L2924/0002 , H01L2924/00
摘要： A method of using high yielding spectra scatterometry measurements to control semiconductor manufacturing processes and systems for accomplishing same is disclosed. In one embodiment, the method comprises providing a library comprised of at least one target optical characteristic trace of a grating structure comprised of a plurality of gate stacks, the target trace corresponding to a semiconductor device having at least one desired electrical performance characteristic, providing a substrate having at least one grating structure formed thereabove, the formed grating structure comprised of a plurality of gate stacks, illuminating at least one grating structure formed above said substrate, measuring light reflected off of the grating structure formed above the substrate to generate an optical characteristic trace for the formed grating structure, and comparing the generated optical characteristic trace to the target trace.
摘要翻译：公开了一种使用高产量光谱散射测量来控制半导体制造工艺和实现其的系统的方法。在一个实施例中，该方法包括提供由至少一个由多个栅极堆叠组成的光栅结构的目标光学特征迹线的库，该目标轨迹对应于具有至少一个期望的电气性能特征的半导体器件，衬底，其具有形成在其上的至少一个光栅结构，所形成的光栅结构由多个栅极堆叠组成，照射形成在所述衬底上方的至少一个光栅结构，测量从衬底上形成的光栅结构反射的光，以产生光学特性跟踪形成的光栅结构，并将生成的光学特征曲线与目标轨迹进行比较。

7. 发明授权

US06746882B1 Method of correcting non-linearity of metrology tools, and system for performing same 有权
标题翻译：校正计量工具非线性的方法，以及执行计量工具的系统
公开(公告)号：US06746882B1
公开(公告)日：2004-06-08
申请号：US10301194
申请日：2002-11-21
申请人： James Broc Stirton , Kevin R. Lensing
发明人： James Broc Stirton , Kevin R. Lensing
IPC分类号： H01L2166
CPC分类号： G03F7/70516 , G01B21/045 , G03F7/70616 , H01J2237/2816
摘要： The present invention is generally directed to various methods of correcting non-linearity in metrology tools, and a system for performing same. In one illustrative embodiment, the method comprises creating a non-linear model of measurement data produced by a metrology tool when measuring a plurality of features, each of which has a different, known feature size, measuring a production feature using the metrology tool to produce metrology data for the production feature, determining a correction factor to be applied to the metrology data for the production feature by comparing the non-linear model to a linear model, and applying the determined correction factor to the metrology data for the production feature.
摘要翻译：本发明一般涉及校正度量工具中的非线性的各种方法，以及用于执行它们的系统。在一个说明性实施例中，该方法包括在测量多个特征时，由度量工具产生的测量数据的非线性模型，每个特征具有不同的已知特征尺寸，使用计量工具测量生产特征以产生用于生产特征的计量数据，通过将非线性模型与线性模型进行比较来确定要应用于生产特征的度量数据的校正因子，以及将确定的校正因子应用于生产特征的度量数据。

8. 发明授权

US06716646B1 Method and apparatus for performing overlay measurements using scatterometry 有权
标题翻译：使用散射法进行覆盖测量的方法和装置
公开(公告)号：US06716646B1
公开(公告)日：2004-04-06
申请号：US09906517
申请日：2001-07-16
申请人： Marilyn I. Wright , Kevin R. Lensing , James Broc Stirton , Richard J. Markle
发明人： Marilyn I. Wright , Kevin R. Lensing , James Broc Stirton , Richard J. Markle
IPC分类号： H01L2166
CPC分类号： H01L22/12
摘要： The present invention provides for a method and an apparatus for overlay measurements using optical techniques. At least one semiconductor device is processed. Metrology data from the processed semiconductor device is acquired. A scatterometry overlay analysis based upon the metrology data is performed. At least one modified manufacturing parameter is calculated based upon the scatterometry overlay analysis.
摘要翻译：本发明提供一种使用光学技术进行覆盖测量的方法和装置。至少一个半导体器件被处理。获取来自处理后的半导体器件的计量数据。执行基于测量数据的散射测绘覆盖分析。基于散点分析叠加分析计算至少一个修改后的制造参数。

9. 发明授权

US06650423B1 Method and apparatus for determining column dimensions using scatterometry 失效
标题翻译：使用散射法确定色谱柱尺寸的方法和装置
公开(公告)号：US06650423B1
公开(公告)日：2003-11-18
申请号：US09897623
申请日：2001-07-02
申请人： Richard J. Markle , Kevin R. Lensing , J. Broc Stirton , Marilyn I. Wright
发明人： Richard J. Markle , Kevin R. Lensing , J. Broc Stirton , Marilyn I. Wright
IPC分类号： G01B1100
CPC分类号： G01B11/00
摘要： A test structure includes a plurality of trenches and a plurality of columns defined in the trenches. A method for determining column dimensions includes providing a wafer having a test structure comprising a plurality of trenches and a plurality of columns defined in the trenches; illuminating at least a portion of the columns with a light source; measuring light reflected from the illuminated portion of the columns to generate a reflection profile; and determining a dimension of the columns based on the reflection profile. A metrology tool adapted to receive a wafer having a test structure comprising a plurality of trenches and a plurality of columns defined in the trenches includes a light source, a detector, and a data processing unit. The light source is adapted to illuminate at least a portion of the columns. The detector is adapted to measure light reflected from the illuminated portion of the columns to generate a reflection profile. The data processing unit is adapted to determine a dimension of the columns based on the reflection profile.
摘要翻译：测试结构包括多个沟槽和限定在沟槽中的多个列。用于确定柱尺寸的方法包括提供具有测试结构的晶片，该测试结构包括限定在沟槽中的多个沟槽和多个列; 用光源照射柱的至少一部分; 测量从所述列的被照亮部分反射的光以产生反射曲线; 以及基于所述反射概况确定所述列的尺寸。适于接收具有包括多个沟槽的测试结构的晶片的测量工具和在沟槽中限定的多个列包括光源，检测器和数据处理单元。光源适于照亮柱的至少一部分。检测器适于测量从列的照明部分反射的光以产生反射曲线。数据处理单元适于基于反射曲线来确定列的尺寸。

10. 发明授权

US06549287B1 Method and apparatus for generating a polishing process endpoint signal using scatterometry 有权
公开(公告)号：US06549287B1
公开(公告)日：2003-04-15
申请号：US09832461
申请日：2001-04-11
申请人： Kevin R. Lensing , James Broc Stirton
发明人： Kevin R. Lensing , James Broc Stirton
IPC分类号： G01B1124
摘要： A method for polishing wafers includes polishing a process layer formed on a wafer, the process layer overlying a grating structure; illuminating at least a portion of the process layer and the grating structure; measuring light reflected from the illuminated portion of the process layer and the grating structure to generate a reflection profile; comparing the measured reflection profile to a target reflection profile having an acceptable degree of planarity; and terminating the polishing of the process layer based on the comparison of the measured reflection profile and the target reflection profile. A metrology tool adapted to measure a wafer having a grating structure and a process layer formed over the grating structure after initiation of a polishing process includes a light source, a detector, and a data processing unit. The light source is adapted to illuminate at least a portion of the process layer overlying the grating structure. The detector is adapted to measure light reflected from the illuminated portion of the process layer and the grating structure to generate a reflection profile. The data processing unit is adapted to compare the measured reflection profile to a target reflection profile having an acceptable degree of planarity and generate an endpoint signal based on the comparison of the measured reflection profile and the target reflection profile.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式