专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US07925369B2 Method and apparatus for optimizing models for extracting dose and focus from critical dimension 有权
标题翻译：从关键维度优化提取剂量和重点的模型的方法和装置
公开(公告)号：US07925369B2
公开(公告)日：2011-04-12
申请号：US11958448
申请日：2007-12-18
申请人： Siddharth Chauhan , Kevin R. Lensing , James Broc Stirton
发明人： Siddharth Chauhan , Kevin R. Lensing , James Broc Stirton
IPC分类号： G06F19/00 , G06F15/18
CPC分类号： G03F7/70641 , G03F7/705 , G03F7/70558 , G03F7/70625
摘要： A method includes defining a reference model of a system having a plurality of terms for modeling data associated with the system. A reference fit error metric is generated for the reference model. A set of evaluation models each having one term different than the reference model is generated. An evaluation fit error metric for each of the evaluation models is generated. The reference model is replaced with a selected evaluation model responsive to the selected evaluation model having an evaluation fit error metric less than the reference fit error metric. The model evaluation is repeated until no evaluation model has an evaluation fit error metric less than the reference fit error metric. The reference model is trained using the data associated with the system, and the trained reference model is employed to determine at least one characteristic of the system.
摘要翻译：一种方法包括定义具有用于建模与系统相关联的数据的多个术语的系统的参考模型。为参考模型生成参考拟合误差度量。生成一组每个具有一个术语不同于参考模型的评估模型。生成每个评估模型的评估拟合误差度量。响应于所选择的评估模型具有小于参考拟合误差度量的评估拟合误差度量的参考模型被替换为所选择的评估模型。重复模型评估，直到评估模型具有小于参考拟合误差度量的评估拟合误差度量为止。使用与系统相关联的数据训练参考模型，并且使用经过训练的参考模型来确定系统的至少一个特征。

2. 发明申请

US20090157577A1 METHOD AND APPARATUS FOR OPTIMIZING MODELS FOR EXTRACTING DOSE AND FOCUS FROM CRITICAL DIMENSION 有权
标题翻译：用于从关键尺寸提取剂量和重点的优化模型的方法和装置
公开(公告)号：US20090157577A1
公开(公告)日：2009-06-18
申请号：US11958448
申请日：2007-12-18
申请人： SIDDHARTH CHAUHAN , Kevin R. Lensing , James Broc Stirton
发明人： SIDDHARTH CHAUHAN , Kevin R. Lensing , James Broc Stirton
IPC分类号： G06F15/18
CPC分类号： G03F7/70641 , G03F7/705 , G03F7/70558 , G03F7/70625
摘要： A method includes defining a reference model of a system having a plurality of terms for modeling data associated with the system. A reference fit error metric is generated for the reference model. A set of evaluation models each having one term different than the reference model is generated. An evaluation fit error metric for each of the evaluation models is generated. The reference model is replaced with a selected evaluation model responsive to the selected evaluation model having an evaluation fit error metric less than the reference fit error metric. The model evaluation is repeated until no evaluation model has an evaluation fit error metric less than the reference fit error metric. The reference model is trained using the data associated with the system, and the trained reference model is employed to determine at least one characteristic of the system.
摘要翻译：一种方法包括定义具有用于建模与系统相关联的数据的多个术语的系统的参考模型。为参考模型生成参考拟合误差度量。生成一组每个具有一个术语不同于参考模型的评估模型。生成每个评估模型的评估拟合误差度量。响应于所选择的评估模型具有小于参考拟合误差度量的评估拟合误差度量的参考模型被替换为所选择的评估模型。重复模型评估，直到评估模型具有小于参考拟合误差度量的评估拟合误差度量为止。使用与系统相关联的数据训练参考模型，并且使用经过训练的参考模型来确定系统的至少一个特征。

3. 发明申请

US20090153818A1 METHOD AND APPARATUS FOR EXTRACTING DOSE AND FOCUS FROM CRITICAL DIMENSION DATA 失效
标题翻译：从关键尺寸数据提取剂量和重点的方法和装置
公开(公告)号：US20090153818A1
公开(公告)日：2009-06-18
申请号：US11958086
申请日：2007-12-17
申请人： Siddharth Chauhan , Kevin R. Lensing , James Broc Stirton
发明人： Siddharth Chauhan , Kevin R. Lensing , James Broc Stirton
IPC分类号： G03B27/42 , G06G7/58
CPC分类号： G03B27/42 , G03F7/70491 , G03F7/70616
摘要： A method for monitoring a photolithography system includes defining a model of the photolithography system for modeling top and bottom critical dimension data associated with features formed by the photolithography system as a function of dose and focus. A library of model inversions is generated for different combinations of top and bottom critical dimension values. Each entry in the library specifies a dose value and a focus value associated with a particular combination of top and bottom critical dimension values. A top critical dimension measurement and a bottom critical dimension measurement of a feature formed by the photolithography system using a commanded dose parameter and a commanded focus parameter are received. The library is accessed using the top and bottom critical dimension measurements to generate values for a received dose parameter and the received focus parameter. The received dose and focus parameters are compared to the commanded dose and focus parameters to characterize the photolithography system.
摘要翻译：用于监测光刻系统的方法包括定义光刻系统的模型，用于模拟与由光刻系统形成的特征相关联的顶部和底部临界尺寸数据作为剂量和焦点的函数。针对顶部和底部关键尺寸值的不同组合生成模型反演库。库中的每个条目指定与顶部和底部关键尺寸值的特定组合相关联的剂量值和焦点值。接收由光刻系统使用指令剂量参数和命令焦点参数形成的特征的顶部关键尺寸测量和底部临界尺寸测量。使用顶部和底部关键尺寸测量来访问库，以生成接收剂量参数和接收到的焦点参数的值。将接收的剂量和聚焦参数与命令的剂量和聚焦参数进行比较，以表征光刻系统。

4. 发明授权

US08149384B2 Method and apparatus for extracting dose and focus from critical dimension data 失效
标题翻译：从关键尺寸数据中提取剂量和重点的方法和装置
公开(公告)号：US08149384B2
公开(公告)日：2012-04-03
申请号：US11958086
申请日：2007-12-17
申请人： Siddharth Chauhan , Kevin R. Lensing , James Broc Stirton
发明人： Siddharth Chauhan , Kevin R. Lensing , James Broc Stirton
IPC分类号： G03B27/52
CPC分类号： G03B27/42 , G03F7/70491 , G03F7/70616
摘要： A method for monitoring a photolithography system includes defining a model of the photolithography system for modeling top and bottom critical dimension data associated with features formed by the photolithography system as a function of dose and focus. A library of model inversions is generated for different combinations of top and bottom critical dimension values. Each entry in the library specifies a dose value and a focus value associated with a particular combination of top and bottom critical dimension values. A top critical dimension measurement and a bottom critical dimension measurement of a feature formed by the photolithography system using a commanded dose parameter and a commanded focus parameter are received. The library is accessed using the top and bottom critical dimension measurements to generate values for a received dose parameter and the received focus parameter. The received dose and focus parameters are compared to the commanded dose and focus parameters to characterize the photolithography system.
摘要翻译：用于监测光刻系统的方法包括定义光刻系统的模型，用于模拟与由光刻系统形成的特征相关联的顶部和底部临界尺寸数据作为剂量和焦点的函数。针对顶部和底部关键尺寸值的不同组合生成模型反演库。库中的每个条目指定与顶部和底部关键尺寸值的特定组合相关联的剂量值和焦点值。接收由光刻系统使用指令剂量参数和命令焦点参数形成的特征的顶部关键尺寸测量和底部临界尺寸测量。使用顶部和底部关键尺寸测量来访问库，以生成接收剂量参数和接收到的焦点参数的值。将接收的剂量和聚焦参数与命令的剂量和聚焦参数进行比较，以表征光刻系统。

5. 发明授权

US06933158B1 Method of monitoring anneal processes using scatterometry, and system for performing same 失效
标题翻译：使用散射法监测退火处理的方法，以及执行相同的系统
公开(公告)号：US06933158B1
公开(公告)日：2005-08-23
申请号：US10285041
申请日：2002-10-31
申请人： Kevin R. Lensing , James Broc Stirton , Homi E. Nariman , Steven P. Reeves
发明人： Kevin R. Lensing , James Broc Stirton , Homi E. Nariman , Steven P. Reeves
IPC分类号： G01N21/21 , G01N21/47 , H01L21/265 , H01L21/324 , H01L21/66 , H01L23/544
CPC分类号： G01N21/4788 , G01N21/211 , H01L21/26513 , H01L21/324 , H01L22/20 , H01L22/34
摘要： The present invention is directed to several inventive methods of monitoring anneal processes performed on implant regions, and a system for accomplishing same. In one aspect, the method comprises forming a first plurality of implant regions in a semiconducting substrate, performing at least one anneal process on implant regions, performing a scatterometric measurement of at least one of the implant regions after at least a portion of the anneal process is performed to determine a profile of the implant region and determining an effectiveness of the anneal process based upon the determined profile of the implant region. In other embodiments, one or more parameters of the anneal process may be varied on subsequently processed substrates based upon the determined efficiency of the anneal process.
摘要翻译：本发明涉及用于监测在植入区域上执行的退火处理的几种发明方法，以及用于实现其的系统。在一个方面，该方法包括在半导体衬底中形成第一多个注入区域，在注入区域上执行至少一个退火工艺，在退火工艺的至少一部分之后执行至少一个注入区域的散射测量被执行以确定植入区域的轮廓并且基于所确定的植入区域的轮廓来确定退火过程的有效性。在其他实施例中，退火工艺的一个或多个参数可以基于确定的退火工艺的效率在随后处理的衬底上变化。

6. 发明授权

US06562635B1 Method of controlling metal etch processes, and system for accomplishing same 失效
标题翻译：控制金属蚀刻工艺的方法及其完成的系统
公开(公告)号：US06562635B1
公开(公告)日：2003-05-13
申请号：US10083710
申请日：2002-02-26
申请人： Kevin R. Lensing , James Broc Stirton , Matthew A. Purdy
发明人： Kevin R. Lensing , James Broc Stirton , Matthew A. Purdy
IPC分类号： H01L2100
CPC分类号： H01L21/67253 , G01N21/9501 , G01N21/956 , H01L22/34
摘要： A method of using scatterometry measurements to determine and control conductive interconnect profiles is disclosed. In one embodiment, the method comprises providing a library of optical characteristic traces, each of which correspond to a grating structure comprised of a plurality of conductive interconnects having a known profile, providing a substrate having at least one grating structure formed thereabove, the formed grating structure comprised of a plurality of conductive interconnects having an unknown profile, and illuminating the formed grating structure. The method further comprises measuring light reflected off of the grating structure to generate an optical characteristic trace for the formed grating structure and determining a profile of the gate electrode structures comprising the formed grating structure by correlating the generated optical characteristic trace to an optical characteristic trace from the library. In another embodiment, the method disclosed herein comprises comparing a generated optical characteristic trace of conductive interconnects having an unknown profile to a target trace established for conductive interconnects having an ideal or acceptable profile.
摘要翻译：公开了一种使用散射测量来确定和控制导电互连轮廓的方法。在一个实施例中，该方法包括提供光学特征曲线库，每个光栅特征迹线对应于由具有已知轮廓的多个导电互连构成的光栅结构，提供具有形成在其上方的至少一个光栅结构的衬底，所形成的光栅结构由具有未知轮廓的多个导电互连构成，并且照射所形成的光栅结构。该方法还包括测量从光栅结构反射的光，以产生用于所形成的光栅结构的光学特征迹线，并通过将所产生的光学特性曲线与所形成的光学特征曲线相关联的光学特性曲线相关联来确定包括所形成的光栅结构的栅电极结构的轮廓图书馆。在另一个实施例中，本文公开的方法包括将具有未知轮廓的导电互连的所产生的光学特性曲线与为具有理想或可接受轮廓的导电互连建立的目标轨迹进行比较。

7. 发明申请

US20080147224A1 Method and Apparatus for Compensating Metrology Data for Site Bias Prior to Filtering 有权
标题翻译：过滤之前用于补偿场地偏差的计量数据的方法和装置
公开(公告)号：US20080147224A1
公开(公告)日：2008-06-19
申请号：US11539803
申请日：2006-10-09
申请人： James Broc Stirton , Kevin R. Lensing , Richard P. Good
发明人： James Broc Stirton , Kevin R. Lensing , Richard P. Good
IPC分类号： G06F19/00
CPC分类号： G06Q50/04 , G06Q10/04 , Y02P90/30
摘要： A method includes acquiring metrology data associated with a process. Bias information associated with the process is determined. The metrology data is adjusted based on the bias information to generate bias-adjusted metrology data. The bias-adjusted metrology data is filtered to identify and reject outlier data. The process is controlled based on the metrology data remaining after the rejection of the outlier data.
摘要翻译：一种方法包括获取与过程相关联的度量数据。确定与该过程相关的偏差信息。基于偏差信息调整计量数据，以产生偏差调整的度量数据。偏差调整后的测量数据被过滤以识别和排除异常值数据。该过程基于在排除异常值数据之后剩余的测量数据进行控制。

8. 发明授权

US06927080B1 Structures for analyzing electromigration, and methods of using same 失效
标题翻译：用于分析电迁移的结构及其使用方法
公开(公告)号：US06927080B1
公开(公告)日：2005-08-09
申请号：US10281760
申请日：2002-10-28
申请人： Homi E. Nariman , James Broc Stirton , Kevin R. Lensing , Steven P. Reeves
发明人： Homi E. Nariman , James Broc Stirton , Kevin R. Lensing , Steven P. Reeves
IPC分类号： H01L21/66 , H01L23/544
CPC分类号： H01L22/34 , G01R31/2858
摘要： The present invention is generally directed to various structures for analyzing electromigration, and methods of using same. In one illustrative embodiment, the method includes forming a grating structure above a semiconducting substrate, the grating structure being comprised of a plurality of conductive features, forcing an electrical current through at least one of the conductive features until a resistance of the conductive feature increases by a preselected amount, and performing at least one scatterometric measurement of the conductive feature to determine a critical dimension of the conductive feature. In another illustrative embodiment, the method includes forming a plurality of grating structures above a semiconducting substrate, each of the grating structures being comprised of a plurality of conductive features having the same critical dimension, the critical dimension of the features of each of the plurality of grating structures being different, and forcing an electrical current through at least one of the conductive features in each of the plurality of grating structures until a resistance of the conductive feature increases by a preselected amount.
摘要翻译：本发明一般涉及用于分析电迁移的各种结构及其使用方法。在一个说明性实施例中，该方法包括在半导体衬底之上形成光栅结构，该光栅结构由多个导电特征组成，迫使电流通过至少一个导电特征直到导电特征的电阻增加预选量，以及执行导电特征的至少一个散射测量以确定导电特征的临界尺寸。在另一说明性实施例中，该方法包括在半导体衬底之上形成多个光栅结构，每个光栅结构由具有相同临界尺寸的多个导电特征组成，多个光栅结构不同，并且迫使电流通过多个光栅结构中的每一个中的导电特征中的至少一个，直到导电特征的电阻增加预选量。

9. 发明授权

US06643008B1 Method of detecting degradation in photolithography processes based upon scatterometric measurements of grating structures, and a device comprising such structures 有权
标题翻译：基于光栅结构的散射测量来检测光刻工艺中的劣化的方法，以及包括这种结构的器件
公开(公告)号：US06643008B1
公开(公告)日：2003-11-04
申请号：US10083699
申请日：2002-02-26
申请人： James Broc Stirton , Kevin R. Lensing
发明人： James Broc Stirton , Kevin R. Lensing
IPC分类号： G01N2100
CPC分类号： G03F7/70616 , G01N21/95684 , G03F7/70625 , G03F7/7065 , H01L22/20
摘要： The present invention is generally directed to various methods of detecting degradation in photolithography processes based upon scatterometric measurements of grating structures, and a device comprising such structures. In one embodiment, the method comprises providing a wafer comprised of a plurality of grating structures, each of the grating structures being comprised of a plurality of features, each of the grating structures having a different critical dimension, illuminating at least one of the grating structures, measuring light reflected off of at least one of the grating structures to generate an optical characteristic trace for the grating structure, and determining the presence of residual photoresist material between the features of the grating structure by comparing the generated optical characteristic trace to at least one optical characteristic trace from a library. In some embodiments, the grating structures are arranged in a linear array. In one illustrative embodiment, the device comprises a wafer and a plurality of grating structures formed above the wafer, each of the grating structures having a different critical dimension, and at least one of the grating structures having a critical dimension that is less than an anticipated range of critical dimensions for integrated circuit devices to be formed on a wafer.
摘要翻译：本发明一般涉及基于光栅结构的散射测量的检测光刻工艺中的劣化的各种方法，以及包括这种结构的器件。在一个实施例中，该方法包括提供由多个光栅结构组成的晶片，每个光栅结构由多个特征组成，每个光栅结构具有不同的临界尺寸，照亮光栅结构中的至少一个测量从所述光栅结构中的至少一个反射的光以产生用于所述光栅结构的光学特征迹线，以及通过将所生成的光学特性曲线与所述光栅结构的至少一个比较来确定所述光栅结构的特征之间的剩余光致抗蚀剂材料的存在图书馆的光学特征曲线。在一些实施例中，光栅结构被布置成线性阵列。在一个说明性实施例中，该器件包括晶片和形成在晶片上方的多个光栅结构，每个光栅结构具有不同的临界尺寸，并且至少一个光栅结构具有小于预期的临界尺寸要在晶圆上形成的集成电路器件的关键尺寸范围。

10. 发明授权

US06582863B1 Method of controlling photolithography processes based upon scatterometric measurements of sub-nominal grating structures 有权
标题翻译：基于次标称光栅结构的散射测量来控制光刻工艺的方法
公开(公告)号：US06582863B1
公开(公告)日：2003-06-24
申请号：US09879751
申请日：2001-06-11
申请人： James Broc Stirton , Kevin R. Lensing
发明人： James Broc Stirton , Kevin R. Lensing
IPC分类号： G03F900
CPC分类号： G03F7/70616 , G03F7/7065
摘要： The present invention is generally directed to a method of controlling photolithography processes based upon scatterometric measurements of sub-nominal grating structures, and a system for accomplishing same. In one embodiment, the method comprises providing a library of optical characteristic traces, each of which corresponds to a sub-nominal grating structure comprised of a plurality of photoresist features having a known degree of residual photoresist material positioned between the photoresist features, forming a process layer above a semiconducting substrate, and forming a layer of photoresist above the process layer. The method further comprises forming at least one sub-nominal grating structure in the layer of photoresist, the sub-nominal grating structure being comprised of a plurality of photoresist features, illuminating the formed sub-nominal grating structure, measuring light reflected off of the formed sub-nominal grating structure to generate an optical characteristic trace for the formed sub-nominal grating structure, and determining the presence of residual photoresist material between the features of the formed sub-nominal grating structure by comparing the generated optical characteristic trace to at least one optical characteristic trace from the library.
摘要翻译：本发明一般涉及一种基于次标称光栅结构的散射测量来控制光刻工艺的方法，以及用于实现其的系统。在一个实施例中，该方法包括提供光学特性迹线库，每个光学特征迹线对应于由多个光致抗蚀剂特征组成的亚标称光栅结构，该光刻胶特征具有定位在光致抗蚀剂特征之间的已知程度的残留光致抗蚀剂材料，形成工艺层，并且在工艺层上形成一层光致抗蚀剂。该方法还包括在光致抗蚀剂层中形成至少一个次标称光栅结构，子标称光栅结构由多个光致抗蚀剂特征组成，照射形成的次标称光栅结构，测量从所形成亚标称光栅结构，以产生用于形成的次标称光栅结构的光学特征迹线，以及通过将所生成的光学特征曲线与至少一个标称光栅结构进行比较来确定所形成的次标称光栅结构的特征之间的残留光致抗蚀剂材料的存在图书馆的光学特征曲线。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式