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1. 发明授权

US06716646B1 Method and apparatus for performing overlay measurements using scatterometry 有权
标题翻译：使用散射法进行覆盖测量的方法和装置
公开(公告)号：US06716646B1
公开(公告)日：2004-04-06
申请号：US09906517
申请日：2001-07-16
申请人： Marilyn I. Wright , Kevin R. Lensing , James Broc Stirton , Richard J. Markle
发明人： Marilyn I. Wright , Kevin R. Lensing , James Broc Stirton , Richard J. Markle
IPC分类号： H01L2166
CPC分类号： H01L22/12
摘要： The present invention provides for a method and an apparatus for overlay measurements using optical techniques. At least one semiconductor device is processed. Metrology data from the processed semiconductor device is acquired. A scatterometry overlay analysis based upon the metrology data is performed. At least one modified manufacturing parameter is calculated based upon the scatterometry overlay analysis.
摘要翻译：本发明提供一种使用光学技术进行覆盖测量的方法和装置。至少一个半导体器件被处理。获取来自处理后的半导体器件的计量数据。执行基于测量数据的散射测绘覆盖分析。基于散点分析叠加分析计算至少一个修改后的制造参数。

2. 发明授权

US06774998B1 Method and apparatus for identifying misregistration in a complimentary phase shift mask process 有权
标题翻译：用于识别互补相移掩模工艺中的对准不良的方法和装置
公开(公告)号：US06774998B1
公开(公告)日：2004-08-10
申请号：US10034790
申请日：2001-12-27
申请人： Marilyn I. Wright , Kevin R. Lensing , James Broc Stirton
发明人： Marilyn I. Wright , Kevin R. Lensing , James Broc Stirton
IPC分类号： G01B1100
CPC分类号： G03F7/70633
摘要： A method includes providing a wafer having a first grating structure and a second grating structure formed in a photoresist layer. At least a portion of the first and second grating structures is illuminated with a light source. Light reflected from the illuminated portion of the first and second grating structures is measured to generate a reflection profile. Misregistration between the first and second grating structures is determined based on the reflection profile. A processing line includes a photolithography stepper, a metrology tool, and a controller. The photolithography stepper is adapted to process wafers in accordance with an operating recipe. The metrology tool is adapted to receive a wafer processed in the stepper. The wafer has a first grating structure and a second grating structure formed in a photoresist layer. The metrology tool includes a light source, a detector, and a data processing unit.
摘要翻译：一种方法包括提供具有形成在光致抗蚀剂层中的第一光栅结构和第二光栅结构的晶片。用光源照射第一和第二光栅结构的至少一部分。测量从第一和第二光栅结构的照明部分反射的光以产生反射曲线。基于反射曲线确定第一和第二光栅结构之间的对准。处理线包括光刻步进机，计量工具和控制器。光刻步进器适于根据操作配方处理晶片。计量工具适于接收在步进器中处理的晶片。晶片具有形成在光致抗蚀剂层中的第一光栅结构和第二光栅结构。计量工具包括光源，检测器和数据处理单元。

3. 发明授权

US06650423B1 Method and apparatus for determining column dimensions using scatterometry 失效
标题翻译：使用散射法确定色谱柱尺寸的方法和装置
公开(公告)号：US06650423B1
公开(公告)日：2003-11-18
申请号：US09897623
申请日：2001-07-02
申请人： Richard J. Markle , Kevin R. Lensing , J. Broc Stirton , Marilyn I. Wright
发明人： Richard J. Markle , Kevin R. Lensing , J. Broc Stirton , Marilyn I. Wright
IPC分类号： G01B1100
CPC分类号： G01B11/00
摘要： A test structure includes a plurality of trenches and a plurality of columns defined in the trenches. A method for determining column dimensions includes providing a wafer having a test structure comprising a plurality of trenches and a plurality of columns defined in the trenches; illuminating at least a portion of the columns with a light source; measuring light reflected from the illuminated portion of the columns to generate a reflection profile; and determining a dimension of the columns based on the reflection profile. A metrology tool adapted to receive a wafer having a test structure comprising a plurality of trenches and a plurality of columns defined in the trenches includes a light source, a detector, and a data processing unit. The light source is adapted to illuminate at least a portion of the columns. The detector is adapted to measure light reflected from the illuminated portion of the columns to generate a reflection profile. The data processing unit is adapted to determine a dimension of the columns based on the reflection profile.
摘要翻译：测试结构包括多个沟槽和限定在沟槽中的多个列。用于确定柱尺寸的方法包括提供具有测试结构的晶片，该测试结构包括限定在沟槽中的多个沟槽和多个列; 用光源照射柱的至少一部分; 测量从所述列的被照亮部分反射的光以产生反射曲线; 以及基于所述反射概况确定所述列的尺寸。适于接收具有包括多个沟槽的测试结构的晶片的测量工具和在沟槽中限定的多个列包括光源，检测器和数据处理单元。光源适于照亮柱的至少一部分。检测器适于测量从列的照明部分反射的光以产生反射曲线。数据处理单元适于基于反射曲线来确定列的尺寸。

4. 发明授权

US07262864B1 Method and apparatus for determining grid dimensions using scatterometry 有权
标题翻译：使用散射法确定网格尺寸的方法和装置
公开(公告)号：US07262864B1
公开(公告)日：2007-08-28
申请号：US09897573
申请日：2001-07-02
申请人： Richard J. Markle , Kevin R. Lensing , J. Broc Stirton , Marilyn I. Wright
发明人： Richard J. Markle , Kevin R. Lensing , J. Broc Stirton , Marilyn I. Wright
IPC分类号： G01B11/14 , G01N21/86 , G01V8/00 , H01L21/00 , H01L21/66 , G01R31/26
CPC分类号： G01B11/24 , G03F7/70625
摘要： A test structure includes a first plurality of lines and a second plurality of lines intersecting the first plurality of lines. The first and second pluralities of lines defining a grid having openings. A method for determining grid dimensions includes providing a wafer having a test structure comprising a plurality of intersecting lines that define a grid having openings; illuminating at least a portion of the grid with a light source; measuring light reflected from the illuminated portion of the grid to generate a reflection profile; and determining a dimension of the grid based on the reflection profile. A metrology tool is adapted to receive a wafer having a test structure comprising a plurality of intersecting lines that define a grid having openings. The metrology tool includes a light source, a detector, and a data processing unit. The light source is adapted to illuminate at least a portion of the grid. The detector is adapted to measure light reflected from the illuminated portion of the grid to generate a reflection profile. The data processing unit is adapted to determine a dimension of the grid based on the reflection profile.
摘要翻译：测试结构包括与第一组多行相交的第一多行和第二多行。限定具有开口的网格的第一和第二多行线。用于确定网格尺寸的方法包括提供具有测试结构的晶片，该测试结构包括限定具有开口的网格的多个相交线; 用光源照亮网格的至少一部分; 测量从所述格栅的被照亮部分反射的光以产生反射分布; 以及基于所述反射分布来确定所述网格的尺寸。测量工具适于接收具有测试结构的晶片，该测试结构包括限定具有开口的格栅的多个相交线。计量工具包括光源，检测器和数据处理单元。光源适于照亮网格的至少一部分。检测器适于测量从栅格的照明部分反射的光以产生反射分布。数据处理单元适于基于反射分布来确定网格的尺寸。

5. 发明授权

US06804014B1 Method and apparatus for determining contact opening dimensions using scatterometry 失效
标题翻译：使用散射法确定接触开口尺寸的方法和装置
公开(公告)号：US06804014B1
公开(公告)日：2004-10-12
申请号：US09897576
申请日：2001-07-02
申请人： Richard J. Markle , Kevin R. Lensing , J. Broc Stirton , Marilyn I. Wright
发明人： Richard J. Markle , Kevin R. Lensing , J. Broc Stirton , Marilyn I. Wright
IPC分类号： G01B1114
CPC分类号： G03F7/70491 , G01B11/14 , G03F7/705 , G03F7/70558 , G03F7/70616 , G03F7/70625
摘要： A test structure includes a plurality of lines and a plurality of contact openings defined in the lines. A method for determining contact opening dimensions includes providing a wafer having a test structure comprising a plurality of lines and a plurality of contact openings defined in the lines; illuminating at least a portion of the contact openings with a light source; measuring light reflected from the illuminated portion of the contact openings to generate a reflection profile; and determining a dimension of the contact openings based on the reflection profile. A metrology tool adapted to receive a wafer having a test structure comprising a plurality of lines and a plurality of contact openings defined in the lines includes a light source, a detector, and a data processing unit. The light source is adapted to illuminate at least a portion of the contact openings. The detector is adapted to measure light reflected from the illuminated portion of the contact openings to generate a reflection profile. The data processing unit is adapted to determine a dimension of the contact openings based on the reflection profile.
摘要翻译：测试结构包括多条线和在线中限定的多个接触开口。用于确定接触开口尺寸的方法包括提供具有测试结构的晶片，该测试结构包括限定在所述线中的多条线和多个接触开口; 用光源照射至少一部分接触开口; 测量从接触开口的被照射部分反射的光以产生反射分布; 以及基于反射曲线确定接触开口的尺寸。适于接收具有测试结构的测量工具的测量结构包括多条线和在该线中限定的多个接触开口，包括光源，检测器和数据处理单元。光源适于照亮至少一部分接触开口。检测器适于测量从接触开口的照射部分反射的光以产生反射曲线。数据处理单元适于基于反射曲线确定接触开口的尺寸。

6. 发明授权

US06933158B1 Method of monitoring anneal processes using scatterometry, and system for performing same 失效
标题翻译：使用散射法监测退火处理的方法，以及执行相同的系统
公开(公告)号：US06933158B1
公开(公告)日：2005-08-23
申请号：US10285041
申请日：2002-10-31
申请人： Kevin R. Lensing , James Broc Stirton , Homi E. Nariman , Steven P. Reeves
发明人： Kevin R. Lensing , James Broc Stirton , Homi E. Nariman , Steven P. Reeves
IPC分类号： G01N21/21 , G01N21/47 , H01L21/265 , H01L21/324 , H01L21/66 , H01L23/544
CPC分类号： G01N21/4788 , G01N21/211 , H01L21/26513 , H01L21/324 , H01L22/20 , H01L22/34
摘要： The present invention is directed to several inventive methods of monitoring anneal processes performed on implant regions, and a system for accomplishing same. In one aspect, the method comprises forming a first plurality of implant regions in a semiconducting substrate, performing at least one anneal process on implant regions, performing a scatterometric measurement of at least one of the implant regions after at least a portion of the anneal process is performed to determine a profile of the implant region and determining an effectiveness of the anneal process based upon the determined profile of the implant region. In other embodiments, one or more parameters of the anneal process may be varied on subsequently processed substrates based upon the determined efficiency of the anneal process.
摘要翻译：本发明涉及用于监测在植入区域上执行的退火处理的几种发明方法，以及用于实现其的系统。在一个方面，该方法包括在半导体衬底中形成第一多个注入区域，在注入区域上执行至少一个退火工艺，在退火工艺的至少一部分之后执行至少一个注入区域的散射测量被执行以确定植入区域的轮廓并且基于所确定的植入区域的轮廓来确定退火过程的有效性。在其他实施例中，退火工艺的一个或多个参数可以基于确定的退火工艺的效率在随后处理的衬底上变化。

7. 发明授权

US06562635B1 Method of controlling metal etch processes, and system for accomplishing same 失效
标题翻译：控制金属蚀刻工艺的方法及其完成的系统
公开(公告)号：US06562635B1
公开(公告)日：2003-05-13
申请号：US10083710
申请日：2002-02-26
申请人： Kevin R. Lensing , James Broc Stirton , Matthew A. Purdy
发明人： Kevin R. Lensing , James Broc Stirton , Matthew A. Purdy
IPC分类号： H01L2100
CPC分类号： H01L21/67253 , G01N21/9501 , G01N21/956 , H01L22/34
摘要： A method of using scatterometry measurements to determine and control conductive interconnect profiles is disclosed. In one embodiment, the method comprises providing a library of optical characteristic traces, each of which correspond to a grating structure comprised of a plurality of conductive interconnects having a known profile, providing a substrate having at least one grating structure formed thereabove, the formed grating structure comprised of a plurality of conductive interconnects having an unknown profile, and illuminating the formed grating structure. The method further comprises measuring light reflected off of the grating structure to generate an optical characteristic trace for the formed grating structure and determining a profile of the gate electrode structures comprising the formed grating structure by correlating the generated optical characteristic trace to an optical characteristic trace from the library. In another embodiment, the method disclosed herein comprises comparing a generated optical characteristic trace of conductive interconnects having an unknown profile to a target trace established for conductive interconnects having an ideal or acceptable profile.
摘要翻译：公开了一种使用散射测量来确定和控制导电互连轮廓的方法。在一个实施例中，该方法包括提供光学特征曲线库，每个光栅特征迹线对应于由具有已知轮廓的多个导电互连构成的光栅结构，提供具有形成在其上方的至少一个光栅结构的衬底，所形成的光栅结构由具有未知轮廓的多个导电互连构成，并且照射所形成的光栅结构。该方法还包括测量从光栅结构反射的光，以产生用于所形成的光栅结构的光学特征迹线，并通过将所产生的光学特性曲线与所形成的光学特征曲线相关联的光学特性曲线相关联来确定包括所形成的光栅结构的栅电极结构的轮廓图书馆。在另一个实施例中，本文公开的方法包括将具有未知轮廓的导电互连的所产生的光学特性曲线与为具有理想或可接受轮廓的导电互连建立的目标轨迹进行比较。

8. 发明申请

US20080147224A1 Method and Apparatus for Compensating Metrology Data for Site Bias Prior to Filtering 有权
标题翻译：过滤之前用于补偿场地偏差的计量数据的方法和装置
公开(公告)号：US20080147224A1
公开(公告)日：2008-06-19
申请号：US11539803
申请日：2006-10-09
申请人： James Broc Stirton , Kevin R. Lensing , Richard P. Good
发明人： James Broc Stirton , Kevin R. Lensing , Richard P. Good
IPC分类号： G06F19/00
CPC分类号： G06Q50/04 , G06Q10/04 , Y02P90/30
摘要： A method includes acquiring metrology data associated with a process. Bias information associated with the process is determined. The metrology data is adjusted based on the bias information to generate bias-adjusted metrology data. The bias-adjusted metrology data is filtered to identify and reject outlier data. The process is controlled based on the metrology data remaining after the rejection of the outlier data.
摘要翻译：一种方法包括获取与过程相关联的度量数据。确定与该过程相关的偏差信息。基于偏差信息调整计量数据，以产生偏差调整的度量数据。偏差调整后的测量数据被过滤以识别和排除异常值数据。该过程基于在排除异常值数据之后剩余的测量数据进行控制。

9. 发明授权

US06927080B1 Structures for analyzing electromigration, and methods of using same 失效
标题翻译：用于分析电迁移的结构及其使用方法
公开(公告)号：US06927080B1
公开(公告)日：2005-08-09
申请号：US10281760
申请日：2002-10-28
申请人： Homi E. Nariman , James Broc Stirton , Kevin R. Lensing , Steven P. Reeves
发明人： Homi E. Nariman , James Broc Stirton , Kevin R. Lensing , Steven P. Reeves
IPC分类号： H01L21/66 , H01L23/544
CPC分类号： H01L22/34 , G01R31/2858
摘要： The present invention is generally directed to various structures for analyzing electromigration, and methods of using same. In one illustrative embodiment, the method includes forming a grating structure above a semiconducting substrate, the grating structure being comprised of a plurality of conductive features, forcing an electrical current through at least one of the conductive features until a resistance of the conductive feature increases by a preselected amount, and performing at least one scatterometric measurement of the conductive feature to determine a critical dimension of the conductive feature. In another illustrative embodiment, the method includes forming a plurality of grating structures above a semiconducting substrate, each of the grating structures being comprised of a plurality of conductive features having the same critical dimension, the critical dimension of the features of each of the plurality of grating structures being different, and forcing an electrical current through at least one of the conductive features in each of the plurality of grating structures until a resistance of the conductive feature increases by a preselected amount.
摘要翻译：本发明一般涉及用于分析电迁移的各种结构及其使用方法。在一个说明性实施例中，该方法包括在半导体衬底之上形成光栅结构，该光栅结构由多个导电特征组成，迫使电流通过至少一个导电特征直到导电特征的电阻增加预选量，以及执行导电特征的至少一个散射测量以确定导电特征的临界尺寸。在另一说明性实施例中，该方法包括在半导体衬底之上形成多个光栅结构，每个光栅结构由具有相同临界尺寸的多个导电特征组成，多个光栅结构不同，并且迫使电流通过多个光栅结构中的每一个中的导电特征中的至少一个，直到导电特征的电阻增加预选量。

10. 发明授权

US06643008B1 Method of detecting degradation in photolithography processes based upon scatterometric measurements of grating structures, and a device comprising such structures 有权
标题翻译：基于光栅结构的散射测量来检测光刻工艺中的劣化的方法，以及包括这种结构的器件
公开(公告)号：US06643008B1
公开(公告)日：2003-11-04
申请号：US10083699
申请日：2002-02-26
申请人： James Broc Stirton , Kevin R. Lensing
发明人： James Broc Stirton , Kevin R. Lensing
IPC分类号： G01N2100
CPC分类号： G03F7/70616 , G01N21/95684 , G03F7/70625 , G03F7/7065 , H01L22/20
摘要： The present invention is generally directed to various methods of detecting degradation in photolithography processes based upon scatterometric measurements of grating structures, and a device comprising such structures. In one embodiment, the method comprises providing a wafer comprised of a plurality of grating structures, each of the grating structures being comprised of a plurality of features, each of the grating structures having a different critical dimension, illuminating at least one of the grating structures, measuring light reflected off of at least one of the grating structures to generate an optical characteristic trace for the grating structure, and determining the presence of residual photoresist material between the features of the grating structure by comparing the generated optical characteristic trace to at least one optical characteristic trace from a library. In some embodiments, the grating structures are arranged in a linear array. In one illustrative embodiment, the device comprises a wafer and a plurality of grating structures formed above the wafer, each of the grating structures having a different critical dimension, and at least one of the grating structures having a critical dimension that is less than an anticipated range of critical dimensions for integrated circuit devices to be formed on a wafer.
摘要翻译：本发明一般涉及基于光栅结构的散射测量的检测光刻工艺中的劣化的各种方法，以及包括这种结构的器件。在一个实施例中，该方法包括提供由多个光栅结构组成的晶片，每个光栅结构由多个特征组成，每个光栅结构具有不同的临界尺寸，照亮光栅结构中的至少一个测量从所述光栅结构中的至少一个反射的光以产生用于所述光栅结构的光学特征迹线，以及通过将所生成的光学特性曲线与所述光栅结构的至少一个比较来确定所述光栅结构的特征之间的剩余光致抗蚀剂材料的存在图书馆的光学特征曲线。在一些实施例中，光栅结构被布置成线性阵列。在一个说明性实施例中，该器件包括晶片和形成在晶片上方的多个光栅结构，每个光栅结构具有不同的临界尺寸，并且至少一个光栅结构具有小于预期的临界尺寸要在晶圆上形成的集成电路器件的关键尺寸范围。

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