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    • 1. 发明授权
    • Method and apparatus for determining grid dimensions using scatterometry
    • 使用散射法确定网格尺寸的方法和装置
    • US07262864B1
    • 2007-08-28
    • US09897573
    • 2001-07-02
    • Richard J. MarkleKevin R. LensingJ. Broc StirtonMarilyn I. Wright
    • Richard J. MarkleKevin R. LensingJ. Broc StirtonMarilyn I. Wright
    • G01B11/14G01N21/86G01V8/00H01L21/00H01L21/66G01R31/26
    • G01B11/24G03F7/70625
    • A test structure includes a first plurality of lines and a second plurality of lines intersecting the first plurality of lines. The first and second pluralities of lines defining a grid having openings. A method for determining grid dimensions includes providing a wafer having a test structure comprising a plurality of intersecting lines that define a grid having openings; illuminating at least a portion of the grid with a light source; measuring light reflected from the illuminated portion of the grid to generate a reflection profile; and determining a dimension of the grid based on the reflection profile. A metrology tool is adapted to receive a wafer having a test structure comprising a plurality of intersecting lines that define a grid having openings. The metrology tool includes a light source, a detector, and a data processing unit. The light source is adapted to illuminate at least a portion of the grid. The detector is adapted to measure light reflected from the illuminated portion of the grid to generate a reflection profile. The data processing unit is adapted to determine a dimension of the grid based on the reflection profile.
    • 测试结构包括与第一组多行相交的第一多行和第二多行。 限定具有开口的网格的第一和第二多行线。 用于确定网格尺寸的方法包括提供具有测试结构的晶片,该测试结构包括限定具有开口的网格的多个相交线; 用光源照亮网格的至少一部分; 测量从所述格栅的被照亮部分反射的光以产生反射分布; 以及基于所述反射分布来确定所述网格的尺寸。 测量工具适于接收具有测试结构的晶片,该测试结构包括限定具有开口的格栅的多个相交线。 计量工具包括光源,检测器和数据处理单元。 光源适于照亮网格的至少一部分。 检测器适于测量从栅格的照明部分反射的光以产生反射分布。 数据处理单元适于基于反射分布来确定网格的尺寸。
    • 2. 发明授权
    • Method and apparatus for determining contact opening dimensions using scatterometry
    • 使用散射法确定接触开口尺寸的方法和装置
    • US06804014B1
    • 2004-10-12
    • US09897576
    • 2001-07-02
    • Richard J. MarkleKevin R. LensingJ. Broc StirtonMarilyn I. Wright
    • Richard J. MarkleKevin R. LensingJ. Broc StirtonMarilyn I. Wright
    • G01B1114
    • G03F7/70491G01B11/14G03F7/705G03F7/70558G03F7/70616G03F7/70625
    • A test structure includes a plurality of lines and a plurality of contact openings defined in the lines. A method for determining contact opening dimensions includes providing a wafer having a test structure comprising a plurality of lines and a plurality of contact openings defined in the lines; illuminating at least a portion of the contact openings with a light source; measuring light reflected from the illuminated portion of the contact openings to generate a reflection profile; and determining a dimension of the contact openings based on the reflection profile. A metrology tool adapted to receive a wafer having a test structure comprising a plurality of lines and a plurality of contact openings defined in the lines includes a light source, a detector, and a data processing unit. The light source is adapted to illuminate at least a portion of the contact openings. The detector is adapted to measure light reflected from the illuminated portion of the contact openings to generate a reflection profile. The data processing unit is adapted to determine a dimension of the contact openings based on the reflection profile.
    • 测试结构包括多条线和在线中限定的多个接触开口。 用于确定接触开口尺寸的方法包括提供具有测试结构的晶片,该测试结构包括限定在所述线中的多条线和多个接触开口; 用光源照射至少一部分接触开口; 测量从接触开口的被照射部分反射的光以产生反射分布; 以及基于反射曲线确定接触开口的尺寸。 适于接收具有测试结构的测量工具的测量结构包括多条线和在该线中限定的多个接触开口,包括光源,检测器和数据处理单元。 光源适于照亮至少一部分接触开口。 检测器适于测量从接触开口的照射部分反射的光以产生反射曲线。 数据处理单元适于基于反射曲线确定接触开口的尺寸。
    • 5. 发明授权
    • Method and apparatus for providing excitation for a process controller
    • 为过程控制器提供激励的方法和装置
    • US07020535B1
    • 2006-03-28
    • US10702877
    • 2003-11-06
    • Christopher A. BodeJ. Broc StirtonRobert J. Chong
    • Christopher A. BodeJ. Broc StirtonRobert J. Chong
    • G06F19/00
    • G05B19/41875G05B2219/32097G05B2219/37538G05B2219/45031Y02P90/22Y02P90/265
    • A method includes defining a design window for a manufacturing process performed by a tool and a process window within the design window. A workpiece likely to have a characteristic outside the process window is identified. The characteristic of the identified workpiece is measured. A control model for controlling the tool is updated using the measured characteristic. A system includes a tool, a process controller, a metrology tool, and a sampling controller. The tool is adapted to process workpieces in accordance with a manufacturing process. The manufacturing process has an associated design window and a process window defined within the design window. The process controller is adapted to control the tool using a control model. The sampling controller is adapted to identify a workpiece likely to have a characteristic outside the process window and direct the metrology tool to measure the characteristic of the identified workpiece. The process controller is further adapted to update the control model using the measured characteristic.
    • 一种方法包括定义由设计窗口内的工具和处理窗口执行的制造过程的设计窗口。 识别出可能具有处理窗口外的特征的工件。 测量所识别的工件的特性。 使用测量特性更新用于控制刀具的控制模型。 系统包括工具,过程控制器,计量工具和采样控制器。 该工具适于根据制造过程处理工件。 制造过程具有关联的设计窗口和在设计窗口内定义的过程窗口。 过程控制器适用于使用控制模型来控制工具。 采样控制器适于识别可能具有处理窗口外的特征的工件,并引导计量工具测量所识别的工件的特性。 过程控制器还适于使用所测量的特征来更新控制模型。
    • 6. 发明授权
    • Method and apparatus for determining column dimensions using scatterometry
    • 使用散射法确定色谱柱尺寸的方法和装置
    • US06650423B1
    • 2003-11-18
    • US09897623
    • 2001-07-02
    • Richard J. MarkleKevin R. LensingJ. Broc StirtonMarilyn I. Wright
    • Richard J. MarkleKevin R. LensingJ. Broc StirtonMarilyn I. Wright
    • G01B1100
    • G01B11/00
    • A test structure includes a plurality of trenches and a plurality of columns defined in the trenches. A method for determining column dimensions includes providing a wafer having a test structure comprising a plurality of trenches and a plurality of columns defined in the trenches; illuminating at least a portion of the columns with a light source; measuring light reflected from the illuminated portion of the columns to generate a reflection profile; and determining a dimension of the columns based on the reflection profile. A metrology tool adapted to receive a wafer having a test structure comprising a plurality of trenches and a plurality of columns defined in the trenches includes a light source, a detector, and a data processing unit. The light source is adapted to illuminate at least a portion of the columns. The detector is adapted to measure light reflected from the illuminated portion of the columns to generate a reflection profile. The data processing unit is adapted to determine a dimension of the columns based on the reflection profile.
    • 测试结构包括多个沟槽和限定在沟槽中的多个列。 用于确定柱尺寸的方法包括提供具有测试结构的晶片,该测试结构包括限定在沟槽中的多个沟槽和多个列; 用光源照射柱的至少一部分; 测量从所述列的被照亮部分反射的光以产生反射曲线; 以及基于所述反射概况确定所述列的尺寸。 适于接收具有包括多个沟槽的测试结构的晶片的测量工具和在沟槽中限定的多个列包括光源,检测器和数据处理单元。 光源适于照亮柱的至少一部分。 检测器适于测量从列的照明部分反射的光以产生反射曲线。 数据处理单元适于基于反射曲线来确定列的尺寸。