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1. 发明授权

US06776810B1 Anionic abrasive particles treated with positively charged polyelectrolytes for CMP 有权
标题翻译：用带正电荷的聚电解质处理的阴离子磨料颗粒用于CMP
公开(公告)号：US06776810B1
公开(公告)日：2004-08-17
申请号：US10073844
申请日：2002-02-11
申请人： Isaac K. Cherian , Phillip Carter , Jeffrey P. Chamberlain , Kevin Moeggenborg , David W. Boldridge
发明人： Isaac K. Cherian , Phillip Carter , Jeffrey P. Chamberlain , Kevin Moeggenborg , David W. Boldridge
IPC分类号： C09G102
CPC分类号： C09K3/1454 , B24B37/044 , B24B37/046 , C09G1/02 , C09K3/1436
摘要： The invention provides a chemical-mechanical polishing systems, and methods of polishing a substrate using the polishing systems, comprising (a) an abrasive, (b) a liquid carrier, and (c) a positively charged polyelectrolyte with a molecular weight of about 15,000 or more, wherein the abrasive comprises particles that are electrostatically associated with the positively charged electrolyte.
摘要翻译：本发明提供一种化学机械抛光系统，以及使用抛光系统抛光衬底的方法，其包括（a）研磨剂，（b）液体载体和（c）分子量为约15,000的带正电荷的聚电解质或更多，其中所述磨料包含与带正电荷的电解液静电相关的颗粒。

2. 发明申请

US20080153293A1 SILICON CARBIDE POLISHING METHOD UTILIZING WATER-SOLUBLE OXIDIZERS 审中-公开
标题翻译：使用水溶性氧化剂的碳化硅抛光方法
公开(公告)号：US20080153293A1
公开(公告)日：2008-06-26
申请号：US12042872
申请日：2008-03-05
申请人： Mukesh Desai , Kevin Moeggenborg , Phillip Carter
发明人： Mukesh Desai , Kevin Moeggenborg , Phillip Carter
IPC分类号： H01L21/302
CPC分类号： C09G1/02 , H01L21/02024 , H01L29/1608
摘要： The inventive method comprises chemically-mechanically polishing a substrate comprising at least one layer of silicon carbide with a polishing composition comprising a liquid carrier, an abrasive, and an oxidizing agent.
摘要翻译：本发明的方法包括用包含液体载体，研磨剂和氧化剂的抛光组合物对包含至少一层碳化硅的基材进行化学机械抛光。

3. 发明授权

US07678700B2 Silicon carbide polishing method utilizing water-soluble oxidizers 有权
标题翻译：使用水溶性氧化剂的碳化硅抛光方法
公开(公告)号：US07678700B2
公开(公告)日：2010-03-16
申请号：US11515546
申请日：2006-09-05
申请人： Mukesh Desai , Kevin Moeggenborg , Phillip Carter
发明人： Mukesh Desai , Kevin Moeggenborg , Phillip Carter
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： C09G1/02 , H01L21/02024 , H01L29/1608
摘要： The inventive method comprises chemically-mechanically polishing a substrate comprising at least one layer of silicon carbide with a polishing composition comprising a liquid carrier, an abrasive, and an oxidizing agent.
摘要翻译：本发明的方法包括用包括液体载体，研磨剂和氧化剂的抛光组合物化学机械抛光包含至少一层碳化硅的基材。

4. 发明授权

US07306637B2 Anionic abrasive particles treated with positively charged polyelectrolytes for CMP 有权
标题翻译：用带正电荷的聚电解质处理的阴离子磨料颗粒用于CMP
公开(公告)号：US07306637B2
公开(公告)日：2007-12-11
申请号：US10855276
申请日：2004-05-27
申请人： Isaac K Cherian , Phillip Carter , Jeffrey P. Chamberlain , Kevin Moeggenborg , David W. Boldridge
发明人： Isaac K Cherian , Phillip Carter , Jeffrey P. Chamberlain , Kevin Moeggenborg , David W. Boldridge
IPC分类号： C09G1/02 , C09G1/04 , B24B1/00
CPC分类号： C09K3/1454 , B24B37/044 , B24B37/046 , C09G1/02 , C09K3/1436
摘要： The invention provides chemical-mechanical polishing systems, and methods of polishing a substrate using the polishing systems, comprising (a) an abrasive, (b) a liquid carrier, and (c) a positively charged polyelectrolyte with a molecular weight of about 15,000 or more, wherein the abrasive comprises particles that are electrostatically associated with the positively charged polyelectrolyte.
摘要翻译：本发明提供化学机械抛光系统以及使用抛光系统抛光衬底的方法，其包括（a）研磨剂，（b）液体载体和（c）分子量为约15,000的带正电荷的聚电解质或其中磨料包含与带正电荷的聚电解质静电相关的颗粒。

5. 发明申请

US20070117497A1 Friction reducing aid for CMP 审中-公开
标题翻译： CMP减摩助剂
公开(公告)号：US20070117497A1
公开(公告)日：2007-05-24
申请号：US11287039
申请日：2005-11-22
申请人： Kevin Moeggenborg , Phillip Carter
发明人： Kevin Moeggenborg , Phillip Carter
IPC分类号： B24B1/00 , B24B29/00
CPC分类号： B24B37/042 , B24B37/0056 , B24B57/02
摘要： The invention provides a chemical-mechanical polishing system for polishing a substrate comprising a polishing component, a water-soluble silicate compound, an oxidizing agent, and water, wherein the pH of the polishing system is about 8 to about 12. The invention further provides a method of chemically-mechanically polishing a substrate with the aforementioned polishing system. The polishing system provides for reduced friction during polishing of substrates.
摘要翻译：本发明提供了一种用于抛光包括抛光组分，水溶性硅酸盐化合物，氧化剂和水的基材的化学机械抛光系统，其中抛光系统的pH为约8至约12.本发明还提供用上述抛光系统对衬底进行化学机械抛光的方法。抛光系统在抛光基材期间提供减少的摩擦。

6. 发明授权

US08691695B2 CMP compositions and methods for suppressing polysilicon removal rates 有权
标题翻译： CMP组合物和抑制多晶硅去除速率的方法
公开(公告)号：US08691695B2
公开(公告)日：2014-04-08
申请号：US13379911
申请日：2010-06-18
申请人： Kevin Moeggenborg , William Ward , Ming-Shih Tsai , Francesco De Rege Thesauro
发明人： Kevin Moeggenborg , William Ward , Ming-Shih Tsai , Francesco De Rege Thesauro
IPC分类号： H01L21/302 , B44C1/22 , H01L21/3105 , H01L21/321 , C09K3/14 , C09G1/02
CPC分类号： H01L21/31053 , C09G1/02 , C09K3/1463 , H01L21/3212
摘要： The present invention provides a chemical-mechanical polishing (CMP) composition suitable for polishing a silicon nitride-containing substrate while suppressing polysilicon removal from the substrate. The composition comprises abrasive particles suspended in an acidic aqueous carrier containing a surfactant comprising an alkyne-diol, an alkyne diol ethoxylate, or a combination thereof. Methods of polishing a semiconductor substrate therewith are also disclosed.
摘要翻译：本发明提供了一种适于抛光含氮化硅的衬底同时抑制从衬底去除多晶硅的化学机械抛光（CMP）组合物。该组合物包含悬浮在酸性含水载体中的磨料颗粒，该载体含有包含炔二醇，炔二醇乙氧基化物或其组合的表面活性剂。还公开了对其半导体衬底进行抛光的方法。

7. 发明申请

US20120094489A1 CMP COMPOSITIONS AND METHODS FOR SUPPRESSING POLYSILICON REMOVAL RATES 有权
标题翻译：用于抑制多晶硅去除速率的CMP组合物和方法
公开(公告)号：US20120094489A1
公开(公告)日：2012-04-19
申请号：US13379911
申请日：2010-06-18
申请人： Kevin Moeggenborg , William Ward , Ming-Shih Tsai , Francesco De Rege Thesauro
发明人： Kevin Moeggenborg , William Ward , Ming-Shih Tsai , Francesco De Rege Thesauro
IPC分类号： H01L21/306 , C09K3/14
CPC分类号： H01L21/31053 , C09G1/02 , C09K3/1463 , H01L21/3212
摘要： The present invention provides a chemical-mechanical polishing (CMP) composition suitable for polishing a silicon nitride-containing substrate while suppressing polysilicon removal from the substrate. The composition comprises abrasive particles suspended in an acidic aqueous carrier containing a surfactant comprising an alkyne-diol, an alkyne diol ethoxylate, or a combination thereof. Methods of polishing a semiconductor substrate therewith are also disclosed.
摘要翻译：本发明提供了一种适于抛光含氮化硅的衬底同时抑制从衬底去除多晶硅的化学机械抛光（CMP）组合物。该组合物包含悬浮在酸性含水载体中的磨料颗粒，该载体含有包含炔二醇，炔二醇乙氧基化物或其组合的表面活性剂。还公开了对其半导体衬底进行抛光的方法。

8. 发明申请

US20050056368A1 Chemical-mechanical polishing composition and method for using the same 有权
标题翻译：化学机械抛光组合物及其使用方法
公开(公告)号：US20050056368A1
公开(公告)日：2005-03-17
申请号：US10660379
申请日：2003-09-11
申请人： David Schroeder , Kevin Moeggenborg
发明人： David Schroeder , Kevin Moeggenborg
IPC分类号： C09G1/02 , C09K3/14 , H01L21/321 , C23F1/00
CPC分类号： C09G1/02 , C09K3/1409 , C09K3/1463 , H01L21/3212
摘要： The invention provides a chemical-mechanical polishing composition comprising: (a) fumed silica particles, (b) about 5×10−3 to about 10 millimoles per kilogram of at least one alkaline earth metal selected from the group consisting of calcium, strontium, barium, and mixtures thereof, based on the total weight of the polishing composition, (c) about 0.1 to about 15 wt. % of an oxidizing agent, and (d) a liquid carrier comprising water. The invention also provides a polishing composition, which optionally comprises an oxidizing agent, comprising about 5×10−3 to about 10 millimoles per kilogram of at least one alkaline earth metal selected from the group consisting of calcium, strontium, and mixtures thereof. The invention further provides methods for polishing a substrate using the aforementioned polishing compositions.
摘要翻译：本发明提供一种化学机械抛光组合物，其包含：（a）煅制二氧化硅颗粒，（b）约5×10 -3至约10毫摩尔/千克至少一种选自钙，锶，钡及其混合物，基于抛光组合物的总重量，（c）约0.1至约15重量％％的氧化剂，和（d）包含水的液体载体。本发明还提供一种抛光组合物，其任选地包含氧化剂，其包含约5×10 -3至约10毫摩尔/千克至少一种选自钙，锶及其混合物的至少一种碱土金属。本发明还提供了使用上述抛光组合物抛光衬底的方法。

9. 发明授权

US08597538B2 Composition for improving dryness during wire sawing 有权
标题翻译：用于在锯切期间改善干燥的组合物
公开(公告)号：US08597538B2
公开(公告)日：2013-12-03
申请号：US13133857
申请日：2009-12-21
申请人： Nevin Naguib Sant , Steven Grumbine , Kevin Moeggenborg
发明人： Nevin Naguib Sant , Steven Grumbine , Kevin Moeggenborg
IPC分类号： C09K5/00
CPC分类号： B28D5/007 , Y02P70/179 , Y10T83/0443
摘要： The invention provides a composition for slicing a substrate using a wire saw wherein the composition comprises a liquid carrier and an abrasive. The invention further provides methods of slicing a substrate using a wire saw and a composition.
摘要翻译：本发明提供一种用于使用线锯切割基底的组合物，其中所述组合物包含液体载体和研磨剂。本发明还提供了使用线锯和组合物对衬底进行切片的方法。

10. 发明申请

US20080200098A1 POLISHING SLURRY FOR ALUMINUM AND ALUMINUM ALLOYS 有权
标题翻译：铝和铝合金抛光浆
公开(公告)号：US20080200098A1
公开(公告)日：2008-08-21
申请号：US12069495
申请日：2008-02-11
申请人： Kevin Moeggenborg , John Clark , Jeffrey Gilliland , Stanley Lesiak , Susan Wilson , Vlasta Brusic
发明人： Kevin Moeggenborg , John Clark , Jeffrey Gilliland , Stanley Lesiak , Susan Wilson , Vlasta Brusic
IPC分类号： B24B13/00
CPC分类号： B24B13/015 , B24B29/02 , B24B37/044 , B24B37/24 , C09G1/02 , C09K3/1454 , C23F3/02 , H01L31/054
摘要： The invention is directed to a method of polishing a surface of an object that includes aluminum. The method includes the step of contacting the surface of the object with a soft polishing pad and a polishing composition. The polishing composition includes abrasive particles, an agent that oxidizes aluminum, and a liquid carrier to polish the surface of the object. The polishing composition includes the abrasive particles suspended in the liquid carrier, and is applied at a pH above about 7.
摘要翻译：本发明涉及一种抛光包括铝的物体的表面的方法。该方法包括使物体的表面与软抛光垫和抛光组合物接触的步骤。抛光组合物包括磨料颗粒，氧化铝的试剂和用于抛光物体表面的液体载体。抛光组合物包括悬浮在液体载体中的磨料颗粒，并且在高于约7的pH下施加。

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