专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20050056368A1 Chemical-mechanical polishing composition and method for using the same 有权
标题翻译：化学机械抛光组合物及其使用方法
公开(公告)号：US20050056368A1
公开(公告)日：2005-03-17
申请号：US10660379
申请日：2003-09-11
申请人： David Schroeder , Kevin Moeggenborg
发明人： David Schroeder , Kevin Moeggenborg
IPC分类号： C09G1/02 , C09K3/14 , H01L21/321 , C23F1/00
CPC分类号： C09G1/02 , C09K3/1409 , C09K3/1463 , H01L21/3212
摘要： The invention provides a chemical-mechanical polishing composition comprising: (a) fumed silica particles, (b) about 5×10−3 to about 10 millimoles per kilogram of at least one alkaline earth metal selected from the group consisting of calcium, strontium, barium, and mixtures thereof, based on the total weight of the polishing composition, (c) about 0.1 to about 15 wt. % of an oxidizing agent, and (d) a liquid carrier comprising water. The invention also provides a polishing composition, which optionally comprises an oxidizing agent, comprising about 5×10−3 to about 10 millimoles per kilogram of at least one alkaline earth metal selected from the group consisting of calcium, strontium, and mixtures thereof. The invention further provides methods for polishing a substrate using the aforementioned polishing compositions.
摘要翻译：本发明提供一种化学机械抛光组合物，其包含：（a）煅制二氧化硅颗粒，（b）约5×10 -3至约10毫摩尔/千克至少一种选自钙，锶，钡及其混合物，基于抛光组合物的总重量，（c）约0.1至约15重量％％的氧化剂，和（d）包含水的液体载体。本发明还提供一种抛光组合物，其任选地包含氧化剂，其包含约5×10 -3至约10毫摩尔/千克至少一种选自钙，锶及其混合物的至少一种碱土金属。本发明还提供了使用上述抛光组合物抛光衬底的方法。

2. 发明授权

US08691695B2 CMP compositions and methods for suppressing polysilicon removal rates 有权
标题翻译： CMP组合物和抑制多晶硅去除速率的方法
公开(公告)号：US08691695B2
公开(公告)日：2014-04-08
申请号：US13379911
申请日：2010-06-18
申请人： Kevin Moeggenborg , William Ward , Ming-Shih Tsai , Francesco De Rege Thesauro
发明人： Kevin Moeggenborg , William Ward , Ming-Shih Tsai , Francesco De Rege Thesauro
IPC分类号： H01L21/302 , B44C1/22 , H01L21/3105 , H01L21/321 , C09K3/14 , C09G1/02
CPC分类号： H01L21/31053 , C09G1/02 , C09K3/1463 , H01L21/3212
摘要： The present invention provides a chemical-mechanical polishing (CMP) composition suitable for polishing a silicon nitride-containing substrate while suppressing polysilicon removal from the substrate. The composition comprises abrasive particles suspended in an acidic aqueous carrier containing a surfactant comprising an alkyne-diol, an alkyne diol ethoxylate, or a combination thereof. Methods of polishing a semiconductor substrate therewith are also disclosed.
摘要翻译：本发明提供了一种适于抛光含氮化硅的衬底同时抑制从衬底去除多晶硅的化学机械抛光（CMP）组合物。该组合物包含悬浮在酸性含水载体中的磨料颗粒，该载体含有包含炔二醇，炔二醇乙氧基化物或其组合的表面活性剂。还公开了对其半导体衬底进行抛光的方法。

3. 发明申请

US20120094489A1 CMP COMPOSITIONS AND METHODS FOR SUPPRESSING POLYSILICON REMOVAL RATES 有权
标题翻译：用于抑制多晶硅去除速率的CMP组合物和方法
公开(公告)号：US20120094489A1
公开(公告)日：2012-04-19
申请号：US13379911
申请日：2010-06-18
申请人： Kevin Moeggenborg , William Ward , Ming-Shih Tsai , Francesco De Rege Thesauro
发明人： Kevin Moeggenborg , William Ward , Ming-Shih Tsai , Francesco De Rege Thesauro
IPC分类号： H01L21/306 , C09K3/14
CPC分类号： H01L21/31053 , C09G1/02 , C09K3/1463 , H01L21/3212
摘要： The present invention provides a chemical-mechanical polishing (CMP) composition suitable for polishing a silicon nitride-containing substrate while suppressing polysilicon removal from the substrate. The composition comprises abrasive particles suspended in an acidic aqueous carrier containing a surfactant comprising an alkyne-diol, an alkyne diol ethoxylate, or a combination thereof. Methods of polishing a semiconductor substrate therewith are also disclosed.
摘要翻译：本发明提供了一种适于抛光含氮化硅的衬底同时抑制从衬底去除多晶硅的化学机械抛光（CMP）组合物。该组合物包含悬浮在酸性含水载体中的磨料颗粒，该载体含有包含炔二醇，炔二醇乙氧基化物或其组合的表面活性剂。还公开了对其半导体衬底进行抛光的方法。

4. 发明授权

US08597538B2 Composition for improving dryness during wire sawing 有权
标题翻译：用于在锯切期间改善干燥的组合物
公开(公告)号：US08597538B2
公开(公告)日：2013-12-03
申请号：US13133857
申请日：2009-12-21
申请人： Nevin Naguib Sant , Steven Grumbine , Kevin Moeggenborg
发明人： Nevin Naguib Sant , Steven Grumbine , Kevin Moeggenborg
IPC分类号： C09K5/00
CPC分类号： B28D5/007 , Y02P70/179 , Y10T83/0443
摘要： The invention provides a composition for slicing a substrate using a wire saw wherein the composition comprises a liquid carrier and an abrasive. The invention further provides methods of slicing a substrate using a wire saw and a composition.
摘要翻译：本发明提供一种用于使用线锯切割基底的组合物，其中所述组合物包含液体载体和研磨剂。本发明还提供了使用线锯和组合物对衬底进行切片的方法。

5. 发明申请

US20080200098A1 POLISHING SLURRY FOR ALUMINUM AND ALUMINUM ALLOYS 有权
标题翻译：铝和铝合金抛光浆
公开(公告)号：US20080200098A1
公开(公告)日：2008-08-21
申请号：US12069495
申请日：2008-02-11
申请人： Kevin Moeggenborg , John Clark , Jeffrey Gilliland , Stanley Lesiak , Susan Wilson , Vlasta Brusic
发明人： Kevin Moeggenborg , John Clark , Jeffrey Gilliland , Stanley Lesiak , Susan Wilson , Vlasta Brusic
IPC分类号： B24B13/00
CPC分类号： B24B13/015 , B24B29/02 , B24B37/044 , B24B37/24 , C09G1/02 , C09K3/1454 , C23F3/02 , H01L31/054
摘要： The invention is directed to a method of polishing a surface of an object that includes aluminum. The method includes the step of contacting the surface of the object with a soft polishing pad and a polishing composition. The polishing composition includes abrasive particles, an agent that oxidizes aluminum, and a liquid carrier to polish the surface of the object. The polishing composition includes the abrasive particles suspended in the liquid carrier, and is applied at a pH above about 7.
摘要翻译：本发明涉及一种抛光包括铝的物体的表面的方法。该方法包括使物体的表面与软抛光垫和抛光组合物接触的步骤。抛光组合物包括磨料颗粒，氧化铝的试剂和用于抛光物体表面的液体载体。抛光组合物包括悬浮在液体载体中的磨料颗粒，并且在高于约7的pH下施加。

6. 发明申请

US20050211950A1 Chemical-mechanical polishing composition and method for using the same 审中-公开
标题翻译：化学机械抛光组合物及其使用方法
公开(公告)号：US20050211950A1
公开(公告)日：2005-09-29
申请号：US10807944
申请日：2004-03-24
申请人： Francesco de Rege Thesauro , Kevin Moeggenborg , Vlasta Brusic , Benjamin Bayer
发明人： Francesco de Rege Thesauro , Kevin Moeggenborg , Vlasta Brusic , Benjamin Bayer
IPC分类号： C09G1/02 , H01L21/321 , C09K13/00 , B44C1/22 , H01L21/302
CPC分类号： C09G1/02
摘要： The invention provides a chemical-mechanical polishing composition comprising: (a) an abrasive comprising α-alumina, (b) about 0.05 to about 50 mmol/kg of ions of at least one metal selected from the group consisting of calcium, strontium, barium, and mixtures thereof, based on the total weight of the polishing composition, and (c) a liquid carrier comprising water. The invention also provides a chemical-mechanical polishing composition comprising: (a) an abrasive selected from the group consisting of α-alumina, γ-alumina, δ-alumina, θ-alumina, diamond, boron carbide, silicon carbide, tungsten carbide, titanium nitride, and mixtures thereof, (b) about 0.05 to about 3.5 mmol/kg of ions of at least one metal selected from the group consisting of calcium, strontium, barium, magnesium, zinc, and mixtures thereof, based on the total weight of the polishing composition, and (c) a liquid carrier comprising water. The invention further provides methods of polishing a substrate using each of the above-described chemical-mechanical polishing compositions.
摘要翻译：本发明提供一种化学机械抛光组合物，其包括：（a）包含α-氧化铝的磨料，（b）约0.05至约50mmol / kg的选自钙，锶，钡中的至少一种金属的离子，及其混合物，基于抛光组合物的总重量，和（c）包含水的液体载体。本发明还提供一种化学机械抛光组合物，其包含：（a）选自α-氧化铝，γ-氧化铝，δ-氧化铝，θ-氧化铝，金刚石，碳化硼，碳化硅，碳化钨，氮化钛及其混合物，（b）基于总重量，约0.05至约3.5mmol / kg的选自钙，锶，钡，镁，锌及其混合物的至少一种金属的离子的抛光组合物，和（c）包含水的液体载体。本发明还提供了使用上述每种化学 - 机械抛光组合物抛光基材的方法。

7. 发明申请

US20050150598A1 Polishing system comprising a highly branched polymer 有权
标题翻译：抛光体系包含高支化聚合物
公开(公告)号：US20050150598A1
公开(公告)日：2005-07-14
申请号：US10755154
申请日：2004-01-09
申请人： Kevin Moeggenborg , Fred Sun
发明人： Kevin Moeggenborg , Fred Sun
IPC分类号： C09G1/00 , C09G1/02 , B44C1/22
CPC分类号： C09G1/02
摘要： The invention provides a polishing system and method of its use comprising (a) a liquid carrier, (b) a polymer having a degree of branching of about 50% or greater, and (c) a polishing pad, an abrasive, or a combination thereof.
摘要翻译：本发明提供了一种抛光系统及其使用方法，包括（a）液体载体，（b）具有约50％或更大分支度的聚合物，和（c）抛光垫，研磨剂或组合其中。

8. 发明授权

US06776810B1 Anionic abrasive particles treated with positively charged polyelectrolytes for CMP 有权
标题翻译：用带正电荷的聚电解质处理的阴离子磨料颗粒用于CMP
公开(公告)号：US06776810B1
公开(公告)日：2004-08-17
申请号：US10073844
申请日：2002-02-11
申请人： Isaac K. Cherian , Phillip Carter , Jeffrey P. Chamberlain , Kevin Moeggenborg , David W. Boldridge
发明人： Isaac K. Cherian , Phillip Carter , Jeffrey P. Chamberlain , Kevin Moeggenborg , David W. Boldridge
IPC分类号： C09G102
CPC分类号： C09K3/1454 , B24B37/044 , B24B37/046 , C09G1/02 , C09K3/1436
摘要： The invention provides a chemical-mechanical polishing systems, and methods of polishing a substrate using the polishing systems, comprising (a) an abrasive, (b) a liquid carrier, and (c) a positively charged polyelectrolyte with a molecular weight of about 15,000 or more, wherein the abrasive comprises particles that are electrostatically associated with the positively charged electrolyte.
摘要翻译：本发明提供一种化学机械抛光系统，以及使用抛光系统抛光衬底的方法，其包括（a）研磨剂，（b）液体载体和（c）分子量为约15,000的带正电荷的聚电解质或更多，其中所述磨料包含与带正电荷的电解液静电相关的颗粒。

9. 发明申请

US20100022171A1 Glass polishing compositions and methods 审中-公开
标题翻译：玻璃抛光组合物和方法
公开(公告)号：US20100022171A1
公开(公告)日：2010-01-28
申请号：US12311717
申请日：2007-10-16
申请人： Nevin Naguib , Kevin Moeggenborg
发明人： Nevin Naguib , Kevin Moeggenborg
IPC分类号： B24B7/24 , C09K3/14
CPC分类号： C03C19/00
摘要： The present invention provides glass polishing compositions and methods suitable for polishing a glass substrate at a down force of about 110 g/cm2 or less. One preferred polishing composition comprises a particulate cerium oxide abrasive (e.g., about 1 to about 15 percent by weight) suspended in an aqueous carrier containing a polymeric stabilizer, e.g., about 50 to about 1500 ppm of the stabilizer, and optionally, a water soluble inorganic salt. Preferably, the particulate cerium oxide abrasive has a mean particle size in the range of about 0.35 to about 0.9 μm. Another preferred composition comprises about 1 to about 15 percent by weight of a particulate cerium oxide abrasive characterized by a mean particle size of at least about 0.2 μm and a purity of at least about 99.9% CeO2, on a weight basis, suspended in an aqueous carrier at a pH at least about 1 unit higher or lower than the isoelectric point (IEP) of the cerium oxide abrasive.
摘要翻译：本发明提供了玻璃抛光组合物和适合于以约110g / cm 2或更低的压力抛光玻璃基材的方法。一种优选的抛光组合物包含悬浮在含有聚合物稳定剂的水性载体中的颗粒状氧化铈磨料（例如约1至约15重量％），例如约50至约1500ppm的稳定剂，以及任选的水溶性无机盐。优选地，颗粒状氧化铈磨料的平均粒度在约0.35至约0.9μm的范围内。另一种优选的组合物包含约1至约15重量％的颗粒状氧化铈磨料，其特征在于平均粒径为至少约0.2μm，纯度为至少约99.9％CeO 2，以重量为基础，悬浮于水性载体在氧化铈研磨剂的等电点（IEP）的至少约1单位的pH以上。

10. 发明申请

US20080153292A1 SILICON CARBIDE POLISHING METHOD UTILIZING WATER-SOLUBLE OXIDIZERS 有权
公开(公告)号：US20080153292A1
公开(公告)日：2008-06-26
申请号：US12043010
申请日：2008-03-05
申请人： Michael White , Lamon Jones , Jeffrey Gilliland , Kevin Moeggenborg
发明人： Michael White , Lamon Jones , Jeffrey Gilliland , Kevin Moeggenborg
IPC分类号： H01L21/302
CPC分类号： C09G1/02 , C09K3/1463 , H01L21/02024 , H01L21/0475 , H01L29/1608
摘要： The inventive method comprises chemically-mechanically polishing a substrate comprising at least one layer of silicon carbide with a polishing composition comprising a liquid carrier, an abrasive, and an oxidizing agent.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式