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1. 发明授权

US08691695B2 CMP compositions and methods for suppressing polysilicon removal rates 有权
标题翻译： CMP组合物和抑制多晶硅去除速率的方法
公开(公告)号：US08691695B2
公开(公告)日：2014-04-08
申请号：US13379911
申请日：2010-06-18
申请人： Kevin Moeggenborg , William Ward , Ming-Shih Tsai , Francesco De Rege Thesauro
发明人： Kevin Moeggenborg , William Ward , Ming-Shih Tsai , Francesco De Rege Thesauro
IPC分类号： H01L21/302 , B44C1/22 , H01L21/3105 , H01L21/321 , C09K3/14 , C09G1/02
CPC分类号： H01L21/31053 , C09G1/02 , C09K3/1463 , H01L21/3212
摘要： The present invention provides a chemical-mechanical polishing (CMP) composition suitable for polishing a silicon nitride-containing substrate while suppressing polysilicon removal from the substrate. The composition comprises abrasive particles suspended in an acidic aqueous carrier containing a surfactant comprising an alkyne-diol, an alkyne diol ethoxylate, or a combination thereof. Methods of polishing a semiconductor substrate therewith are also disclosed.
摘要翻译：本发明提供了一种适于抛光含氮化硅的衬底同时抑制从衬底去除多晶硅的化学机械抛光（CMP）组合物。该组合物包含悬浮在酸性含水载体中的磨料颗粒，该载体含有包含炔二醇，炔二醇乙氧基化物或其组合的表面活性剂。还公开了对其半导体衬底进行抛光的方法。

2. 发明申请

US20120094489A1 CMP COMPOSITIONS AND METHODS FOR SUPPRESSING POLYSILICON REMOVAL RATES 有权
标题翻译：用于抑制多晶硅去除速率的CMP组合物和方法
公开(公告)号：US20120094489A1
公开(公告)日：2012-04-19
申请号：US13379911
申请日：2010-06-18
申请人： Kevin Moeggenborg , William Ward , Ming-Shih Tsai , Francesco De Rege Thesauro
发明人： Kevin Moeggenborg , William Ward , Ming-Shih Tsai , Francesco De Rege Thesauro
IPC分类号： H01L21/306 , C09K3/14
CPC分类号： H01L21/31053 , C09G1/02 , C09K3/1463 , H01L21/3212
摘要： The present invention provides a chemical-mechanical polishing (CMP) composition suitable for polishing a silicon nitride-containing substrate while suppressing polysilicon removal from the substrate. The composition comprises abrasive particles suspended in an acidic aqueous carrier containing a surfactant comprising an alkyne-diol, an alkyne diol ethoxylate, or a combination thereof. Methods of polishing a semiconductor substrate therewith are also disclosed.
摘要翻译：本发明提供了一种适于抛光含氮化硅的衬底同时抑制从衬底去除多晶硅的化学机械抛光（CMP）组合物。该组合物包含悬浮在酸性含水载体中的磨料颗粒，该载体含有包含炔二醇，炔二醇乙氧基化物或其组合的表面活性剂。还公开了对其半导体衬底进行抛光的方法。

3. 发明申请

US20070144075A1 Chemical mechanical polishing particles and slurry and method of producing the same 审中-公开
标题翻译：化学机械抛光颗粒和浆料及其制备方法
公开(公告)号：US20070144075A1
公开(公告)日：2007-06-28
申请号：US11635686
申请日：2006-12-08
申请人： Kon-Tsu Kin , Shu-Fei Chan , Hsu-Chuan Liu , Ming-Shih Tsai
发明人： Kon-Tsu Kin , Shu-Fei Chan , Hsu-Chuan Liu , Ming-Shih Tsai
IPC分类号： B24D3/02 , B32B1/00 , B32B18/00
CPC分类号： C09G1/02 , C09K3/1409 , C09K3/1436 , H01L21/31053 , Y10T428/2991 , Y10T428/2998
摘要： In a method of producing chemical mechanical polishing particles and slurry, a type of organic nano particles are put in a reaction solution containing nano-scale cerium oxide; the nano-scale cerium oxide is assembled to outer surface of the organic nano particles due to electrostatic attraction among particles, so as to form chemical mechanical polishing particles having a cerium oxide shell. The chemical mechanical polishing particles having a cerium oxide shell are then used to produce chemical mechanical polishing slurry.
摘要翻译：在制造化学机械抛光颗粒和浆料的方法中，将一种有机纳米颗粒放入含有纳米级氧化铈的反应溶液中; 纳米级氧化铈由于颗粒之间的静电吸引而组装到有机纳米颗粒的外表面，从而形成具有氧化铈壳的化学机械抛光颗粒。然后使用具有氧化铈壳的化学机械抛光颗粒来生产化学机械抛光浆料。

4. 发明申请

US20070181535A1 COMPOSITIONS AND METHODS FOR CMP OF SEMICONDUCTOR MATERIALS 有权
标题翻译：用于半导体材料的CMP的组合物和方法
公开(公告)号：US20070181535A1
公开(公告)日：2007-08-09
申请号：US11673399
申请日：2007-02-09
申请人： Francesco De Rege Thesauro , Steven Grumbine , Phillip Carter , Shoutian Li , Jian Zhang , David Schroeder , Ming-Shih Tsai
发明人： Francesco De Rege Thesauro , Steven Grumbine , Phillip Carter , Shoutian Li , Jian Zhang , David Schroeder , Ming-Shih Tsai
IPC分类号： H01L21/461 , C09K13/00 , C03C15/00 , B44C1/22 , H01L21/302
CPC分类号： C09G1/02 , H01L21/3212
摘要： The invention provides a composition for chemical-mechanical polishing, The composition comprises an abrasive, a first metal rate polishing modifier agent, a second metal rate polishing modifier agent, and a liquid carrier. In one embodiment, the first metal rate polishing modifier agent has a standard reduction potential less than 0.34 V relative to a standard hydrogen electrode, and the second metal rate polishing modifier agent has a standard reduction potential greater than 0.34 V relative to a standard hydrogen electrode. In other embodiments, the first and second metal rate polishing modifier agents are different oxidizing agents.
摘要翻译：本发明提供了一种用于化学机械抛光的组合物。该组合物包括研磨剂，第一金属速率抛光改性剂，第二金属速率抛光改性剂和液体载体。在一个实施方案中，第一金属速率抛光改性剂相对于标准氢电极具有小于0.34V的标准还原电位，并且第二金属速率抛光改性剂相对于标准氢电极具有大于0.34V的标准还原电位。在其它实施方案中，第一和第二金属速率抛光改性剂是不同的氧化剂。

5. 发明授权

US08529680B2 Compositions for CMP of semiconductor materials 有权
标题翻译：半导体材料CMP的组成
公开(公告)号：US08529680B2
公开(公告)日：2013-09-10
申请号：US12854470
申请日：2010-08-11
申请人： Francesco De Rege Thesauro , Steven Grumbine , Phillip Carter , Shoutian Li , Jian Zhang , David Schroeder , Ming-Shih Tsai
发明人： Francesco De Rege Thesauro , Steven Grumbine , Phillip Carter , Shoutian Li , Jian Zhang , David Schroeder , Ming-Shih Tsai
IPC分类号： C09G1/02 , B24D3/02 , C09C1/68 , C09K3/14
CPC分类号： C09G1/02 , H01L21/3212
摘要： The invention provides a composition for chemical-mechanical polishing. The composition comprises an abrasive, a first metal rate polishing modifier agent, a second metal rate polishing modifier agent, and a liquid carrier. In one embodiment, the first metal rate polishing modifier agent has a standard reduction potential less than 0.34 V relative to a standard hydrogen electrode, and the second metal rate polishing modifier agent has a standard reduction potential greater than 0.34 V relative to a standard hydrogen electrode. In other embodiments, the first and second metal rate polishing modifier agents are different oxidizing agents.
摘要翻译：本发明提供了用于化学机械抛光的组合物。组合物包含研磨剂，第一金属速率抛光改性剂，第二金属速率抛光改性剂和液体载体。在一个实施方案中，第一金属速率抛光改性剂相对于标准氢电极具有小于0.34V的标准还原电位，并且第二金属速率抛光改性剂相对于标准氢电极具有大于0.34V的标准还原电位。在其它实施方案中，第一和第二金属速率抛光改性剂是不同的氧化剂。

6. 发明授权

US07803203B2 Compositions and methods for CMP of semiconductor materials 有权
标题翻译：半导体材料CMP的组成和方法
公开(公告)号：US07803203B2
公开(公告)日：2010-09-28
申请号：US11673399
申请日：2007-02-09
申请人： Francesco De Rege Thesauro , Steven Grumbine , Phillip Carter , Shoutian Li , Jian Zhang , David Schroeder , Ming-Shih Tsai
发明人： Francesco De Rege Thesauro , Steven Grumbine , Phillip Carter , Shoutian Li , Jian Zhang , David Schroeder , Ming-Shih Tsai
IPC分类号： C09K3/14 , B24B1/00 , B24B7/10
CPC分类号： C09G1/02 , H01L21/3212
摘要： The invention provides a composition for chemical-mechanical polishing. The composition comprises an abrasive, a first metal rate polishing modifier agent, a second metal rate polishing modifier agent, and a liquid carrier. In one embodiment, the first metal rate polishing modifier agent has a standard reduction potential less than 0.34 V relative to a standard hydrogen electrode, and the second metal rate polishing modifier agent has a standard reduction potential greater than 0.34 V relative to a standard hydrogen electrode. In other embodiments, the first and second metal rate polishing modifier agents are different oxidizing agents.
摘要翻译：本发明提供了用于化学机械抛光的组合物。组合物包含研磨剂，第一金属速率抛光改性剂，第二金属速率抛光改性剂和液体载体。在一个实施方案中，第一金属速率抛光改性剂相对于标准氢电极具有小于0.34V的标准还原电位，并且第二金属速率抛光改性剂相对于标准氢电极具有大于0.34V的标准还原电位。在其它实施方案中，第一和第二金属速率抛光改性剂是不同的氧化剂。

7. 发明授权

US5922091A Chemical mechanical polishing slurry for metallic thin film 失效
标题翻译：用于金属薄膜的化学机械抛光浆料
公开(公告)号：US5922091A
公开(公告)日：1999-07-13
申请号：US857846
申请日：1997-05-16
申请人： Ming-Shih Tsai , Wei-Tsu Tseng
发明人： Ming-Shih Tsai , Wei-Tsu Tseng
IPC分类号： C09G1/02 , C09K3/14 , B24D3/34
CPC分类号： C09G1/02 , C09K3/1463
摘要： This invention provides metallic thin film chemical mechanical polishing slurry compositions having improved suspension stability. The slurry contains 2.5-10% by weight of alumina powder and 2-20% by volume of phosphoric acid (80% concentration ) solution, and using potassium hydroxide to adjust its pH to 1-6 so as to increase suspension ability of the alumina powder in the aqueous slurry. The polishing slurry compositions can further combine with suitable oxidizers such as hydrogen peroxide, ferric nitrate and so on to be appropriately used for chemical mechanical polishing metallic thin film in the process of manufacturing semiconductor in order to control abrasion rate and unevenness more easily.
摘要翻译：本发明提供具有改进的悬浮稳定性的金属薄膜化学机械抛光浆料组合物。该浆料含有2.5-10重量％的氧化铝粉末和2-20体积％的磷酸（80％浓度）溶液，并且使用氢氧化钾将其pH调节至1-6，以提高氧化铝的悬浮能力粉末在水性浆液中。抛光浆料组合物可以进一步与合适的氧化剂如过氧化氢，硝酸铁等组合，以在半导体制造过程中适用于化学机械抛光金属薄膜，以更容易地控制磨损率和不均匀性。

8. 发明申请

US20100314576A1 COMPOSITIONS FOR CMP OF SEMICONDUCTOR MATERIALS 有权
标题翻译：用于半导体材料的CMP的组合物
公开(公告)号：US20100314576A1
公开(公告)日：2010-12-16
申请号：US12854470
申请日：2010-08-11
申请人： Francesco DE REGE THESAURO , Steven Grumbine , Phillip Carter , Shoutian Li , Jian Zhang , David Schroeder , Ming-Shih Tsai
发明人： Francesco DE REGE THESAURO , Steven Grumbine , Phillip Carter , Shoutian Li , Jian Zhang , David Schroeder , Ming-Shih Tsai
IPC分类号： C09K13/06 , C09K13/00
CPC分类号： C09G1/02 , H01L21/3212
摘要： The invention provides a composition for chemical-mechanical polishing. The composition comprises an abrasive, a first metal rate polishing modifier agent, a second metal rate polishing modifier agent, and a liquid carrier. In one embodiment, the first metal rate polishing modifier agent has a standard reduction potential less than 0.34 V relative to a standard hydrogen electrode, and the second metal rate polishing modifier agent has a standard reduction potential greater than 0.34 V relative to a standard hydrogen electrode. In other embodiments, the first and second metal rate polishing modifier agents are different oxidizing agents.
摘要翻译：本发明提供了用于化学机械抛光的组合物。组合物包含研磨剂，第一金属速率抛光改性剂，第二金属速率抛光改性剂和液体载体。在一个实施方案中，第一金属速率抛光改性剂相对于标准氢电极具有小于0.34V的标准还原电位，并且第二金属速率抛光改性剂相对于标准氢电极具有大于0.34V的标准还原电位。在其它实施方案中，第一和第二金属速率抛光改性剂是不同的氧化剂。

9. 发明授权

US06555424B2 Thin film transistor with sub-gates and schottky source/drain and a manufacturing method of the same 失效
公开(公告)号：US06555424B2
公开(公告)日：2003-04-29
申请号：US09879967
申请日：2001-06-14
申请人： Horng-Chih Lin , Ming-Shih Tsai , Tiao-Yuan Huang
发明人： Horng-Chih Lin , Ming-Shih Tsai , Tiao-Yuan Huang
IPC分类号： H01L21338
CPC分类号： H01L29/458 , H01L29/78609 , H01L29/78636 , H01L29/78645
摘要： The present invention discloses a thin film transistor with sub-gates and Schottky source/drain and a method of manufacturing the same. Doping of source/drain, and the following annealing steps used conventionally are omitted and the complexity of process and process costs are reduced. The temperature of the process is also decreased. A thin film transistor with sub-gates and Schottky source/drain of the invention is able to operate in both the n type and p type channel modes on the same transistor element depending on the biased voltage of the sub-gate. Moreover, an electric junction is formed by induction, using bias voltage applied on the sub-gate, which takes the place of the conventional source/drain extensions. Consequently, the off-state leakage current is reduced.

10. 发明授权

US06174454B1 Slurry formulation for selective CMP of organic spin-on-glass insulating layer with low dielectric constant 有权
标题翻译：用于具有低介电常数的有机旋涂玻璃绝缘层的选择性CMP的浆料配方
公开(公告)号：US06174454B1
公开(公告)日：2001-01-16
申请号：US09239664
申请日：1999-01-29
申请人： Ming-Shih Tsai , Shih-Tzung Chang , Bau-Tong Dai , Ying-Lang Wang
发明人： Ming-Shih Tsai , Shih-Tzung Chang , Bau-Tong Dai , Ying-Lang Wang
IPC分类号： C09K1306
CPC分类号： C03C15/02 , C03C19/00 , F28D9/0043 , F28D21/0003 , F28F3/02 , F28F3/025 , F28F9/0268 , F28F2265/26 , H01L21/31053 , H01L21/3122 , Y10T29/49366 , Y10T29/49393
摘要： Slurry formulationf or CMP of organic-added low SOG dielectric was development. The SOG layers with various amount of organic content are subject to polish experiments using silica- and zirconia-based slurries with a variety of additives. The results indicate that, as the amount of organic content in SOG increases, CMP polish rate drops with silica-based KOH-added slurry. On the other hand, zirconia-based slurry could result in higher plish rate for both SOG (>400 nm/min) and thermal oxide. Polish selectivity ranging from 1.2 to 9.1 can be achieved by adding various amount of tetra-alkyl in ammonium hydroxide.
摘要翻译：开发有机添加的低SOG电介质的浆料配方或CMP。使用具有各种添加剂的二氧化硅和氧化锆基浆料对具有各种有机含量的SOG层进行抛光实验。结果表明，随着SOG中有机物含量的增加，CMP抛光速率随着添加二氧化硅的KOH添加而降低。另一方面，氧化锆基浆料可以导致SOG（> 400nm / min）和热氧化物的更高的pl丝率。通过在氢氧化铵中加入不同量的四烷基可以实现1.2至9.1的波长选择性。

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