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1. 发明授权

US06577178B1 Transient gate tunneling current control 有权
标题翻译：瞬态栅极隧道电流控制
公开(公告)号：US06577178B1
公开(公告)日：2003-06-10
申请号：US10064504
申请日：2002-07-23
申请人： Kerry Bernstein , Peter E. Cottrell , Edward J. Nowak , Norman J. Rohrer , Douglas W. Stout
发明人： Kerry Bernstein , Peter E. Cottrell , Edward J. Nowak , Norman J. Rohrer , Douglas W. Stout
IPC分类号： H03K1730
CPC分类号： H03K19/00361 , H03K19/0948
摘要： A circuit includes a resistance-capacitance (RC) structure connected to a first set of transistors and a second set of transistors that perform the same logical function as the first set of transistors. The first set of transistors have thinner gate oxides than the second set of transistors. The RC structure drains an electric field from the first set of transistors, such that the first set of transistors are on only during initial transistor switching. In other words, the RC structure turns off the first set of transistors after transistor switching is completed. Also, the first set of transistors and the second set of transistors share common inputs and outputs. The first set of transistors exhibit higher tunneling currents than the second set of transistors. The thinner gate oxides of the first set of transistors cause the first set of transistors to exhibit higher device currents than the second set of transistors. The RC structure includes a capacitor connected to a gate of the first set of transistors and a resistor connected to the capacitor and to ground.
摘要翻译：电路包括连接到第一组晶体管的电阻 - 电容（RC）结构和执行与第一组晶体管相同的逻辑功能的第二组晶体管。第一组晶体管具有比第二组晶体管更薄的栅极氧化物。 RC结构从第一组晶体管引出电场，使得第一组晶体管仅在初始晶体管切换期间导通。换句话说，在晶体管切换完成之后，RC结构关闭第一组晶体管。此外，第一组晶体管和第二组晶体管共享公共输入和输出。第一组晶体管表现出比第二组晶体管更高的隧穿电流。第一组晶体管的较薄的栅极氧化物导致第一组晶体管表现出比第二组晶体管更高的器件电流。 RC结构包括连接到第一组晶体管的栅极的电容器和连接到电容器并接地的电阻器。

2. 发明授权

US06580293B1 Body-contacted and double gate-contacted differential logic circuit and method of operation 有权
标题翻译：身体接触和双门接触差分逻辑电路及其操作方法
公开(公告)号：US06580293B1
公开(公告)日：2003-06-17
申请号：US09683325
申请日：2001-12-14
申请人： Kerry Bernstein , Peter E. Cottrell , Stephen V. Kosonocky , David Meltzer , Edward J. Nowak , Kevin J. Nowka , Norman J. Rohrer
发明人： Kerry Bernstein , Peter E. Cottrell , Stephen V. Kosonocky , David Meltzer , Edward J. Nowak , Kevin J. Nowka , Norman J. Rohrer
IPC分类号： H03K19096
CPC分类号： H03K19/1737 , H03K3/356113 , H03K19/0963
摘要： A differential logic circuit (20, 120, 220, 320, 420 and 520) designed to ensure stability of the output of the circuit. The logic circuit includes a differential load structure (22, 122, 222, 322, 422) that is connected to evaluate transistors (50, 52, 54, 56). In several embodiments, the outputs of the load transistors (30, 32) in the differential load structure are connected to the bodies of the evaluate transistors. In the other embodiments, the outputs of the load transistors in the differential structure are connected to one of the gates of a double-gated evaluate transistors. Level-shifting output buffers (160, 178) are used in connection with the embodiments of the invention that do not include double-gated evaluate transistors.
摘要翻译：设计用于确保电路输出的稳定性的差分逻辑电路（20,120,220,320,420和520）。逻辑电路包括被连接以评估晶体管（50,52,54,56）的差分负载结构（22,122,222,322,422）。在几个实施例中，差分负载结构中的负载晶体管（30,32）的输出连接到评估晶体管的主体。在其他实施例中，差分结构中的负载晶体管的输出连接到双门控评估晶体管的栅极之一。结合本发明的不包括双门控评估晶体管的实施例，使用电平移位输出缓冲器（160,178）。

3. 发明授权

US06995376B2 Silicon-on-insulator latch-up pulse-radiation detector 有权
标题翻译：绝缘体上电锁存脉冲辐射检测器
公开(公告)号：US06995376B2
公开(公告)日：2006-02-07
申请号：US10604204
申请日：2003-07-01
申请人： Peter E. Cottrell , Robert H. Dennard , Edward J. Nowak , Norman J. Rohrer
发明人： Peter E. Cottrell , Robert H. Dennard , Edward J. Nowak , Norman J. Rohrer
IPC分类号： G01T1/24
CPC分类号： H01L31/1113
摘要： A radiation detector formed using silicon-on-insulator technology. The radiation detector includes a silicon layer formed on an insulating substrate, wherein the silicon layer includes a PNPN structure, and a gate layer formed over the PNPN structure, wherein the gate layer includes a PN gate. Latch-up occurs in the radiation detector only in response to incident radiation.
摘要翻译：使用绝缘体上硅技术形成的放射线检测器。放射线检测器包括形成在绝缘基板上的硅层，其中硅层包括PNPN结构，以及形成在PNPN结构上的栅极层，其中栅极层包括PN栅极。仅在响应入射辐射的情况下，在辐射探测器中发生锁定。

4. 发明授权

US06191628B1 Circuit for controlling the slew rate of a digital signal 失效
标题翻译：用于控制数字信号的转换速率的电路
公开(公告)号：US06191628B1
公开(公告)日：2001-02-20
申请号：US09224763
申请日：1999-01-04
申请人： Kerry Bernstein , Edward J. Nowak , Norman J. Rohrer
发明人： Kerry Bernstein , Edward J. Nowak , Norman J. Rohrer
IPC分类号： H03K512
CPC分类号： H03K19/00323 , H03K5/131 , H03K5/133 , H03K19/00361 , H03K2005/00071
摘要： A circuit for selectively controlling the slew rate of a signal on a data line. A capacitor is connected at one end to a common terminal of a power supply and to a switching circuit. The switching circuit advantageously connects the capacitor to the data line in response to a control pulse, capacitively loading the data line so that slew rate is decreased. When the control pulse assumes a different state, the capacitor is connected by the switching circuit to a terminal of a power supply, and acts as a decoupling capacitor. The dual role of the capacitor provides for efficient circuit layout by utilizing one component in two functions.
摘要翻译：用于选择性地控制数据线上的信号的转换速率的电路。电容器一端连接到电源的公共端子和开关电路。开关电路有利地将电容器响应于控制脉冲连接到数据线，电容性地加载数据线，使得转换速率降低。当控制脉冲处于不同状态时，电容器通过开关电路连接到电源的端子，并用作去耦电容器。电容器的双重作用通过利用两个功能中的一个组件来提供有效的电路布局。

5. 发明授权

US06433372B1 Dense multi-gated device design 失效
标题翻译：密集的多门控设备设计
公开(公告)号：US06433372B1
公开(公告)日：2002-08-13
申请号：US09527863
申请日：2000-03-17
申请人： Eric Adler , Kerry Bernstein , John J. Ellis-Monaghan , Jenifer E. Lary , Edward J. Nowak , Norman J. Rohrer
发明人： Eric Adler , Kerry Bernstein , John J. Ellis-Monaghan , Jenifer E. Lary , Edward J. Nowak , Norman J. Rohrer
IPC分类号： H01L2972
CPC分类号： H01L29/66484
摘要： A multigated FET having reduced diffusion capacitance, self-compensating effective channel length, improved short channel effects control, and enhanced density. Forming the FET by providing a plurality of separated insulated gates on a substrate, including forming insulating material on at least four surfaces of each of the gates, forming a dielectric layer on the substrate between the insulated gates, depositing and planarizing a layer of conductive material on and between the insulated gates down to the insulating material on the top surface of the insulated gates, and implanting diffusion regions into the substrate, adjacent to and beneath a portion of two distal ones of the plurality of insulated gates.
摘要翻译：具有减小的扩散电容，自补偿有效沟道长度，改进的短沟道效应控制和增强的密度的多重FET。通过在衬底上设置多个分离的绝缘栅来形成FET，包括在每个栅极的至少四个表面上形成绝缘材料，在绝缘栅之间的衬底上形成介电层，沉积和平坦化导电材料层绝缘栅极之间和之间以及绝缘栅极顶表面之间的绝缘材料，以及将多个绝缘栅极中的两个远端绝缘栅极的一部分附近并在下方的基底上注入扩散区域。

6. 发明授权

US08234554B2 Soft error correction in sleeping processors 有权
标题翻译：睡眠处理器中的软错误校正
公开(公告)号：US08234554B2
公开(公告)日：2012-07-31
申请号：US12170462
申请日：2008-07-10
申请人： Kerry Bernstein , Norman J. Rohrer
发明人： Kerry Bernstein , Norman J. Rohrer
IPC分类号： H03M13/00
CPC分类号： H03M13/15 , G06F11/1008 , H03M13/098 , H03M13/13 , H03M13/1505 , H03M13/19
摘要： An error-correction code is generated on a line-by-line basis of the physical logic register and latch contents that store encoded words within a processor just before the processor is put into sleep mode, and later-generated syndrome bits are checked for any soft errors when the processor wakes back up, e.g., as part of the power-up sequence.
摘要翻译：在处理器进入睡眠模式之前，将物理逻辑寄存器和锁存内容逐行生成在处理器内的处理器内，生成错误校正码，并检查后来生成的校验码位处理器唤醒时出现软错误，例如作为上电顺序的一部分。

7. 发明申请

US20120066657A1 METHOD OF DESIGNING AN INTEGRATED CIRCUIT BASED ON A COMBINATION OF MANUFACTURABILITY, TEST COVERAGE AND, OPTIONALLY, DIAGNOSTIC COVERAGE 有权
标题翻译：基于可制造性，测试覆盖和可选择的诊断覆盖的组合设计集成电路的方法
公开(公告)号：US20120066657A1
公开(公告)日：2012-03-15
申请号：US12880228
申请日：2010-09-13
申请人： Kerry Bernstein , James A. Culp , Leah M.P. Pastel , Kirk D. Peterson , Norman J. Rohrer
发明人： Kerry Bernstein , James A. Culp , Leah M.P. Pastel , Kirk D. Peterson , Norman J. Rohrer
IPC分类号： G06F17/50 , G06F9/455
CPC分类号： G06F17/5045 , G06F2217/12 , Y02P90/265
摘要： Disclose are embodiments of an integrated circuit design method based on a combination of manufacturability, test coverage and, optionally, diagnostic coverage. Design-for manufacturability (DFM) modifications to the layout of an integrated circuit can be made in light of test coverage. Alternatively, test coverage of an integrated circuit can be established in light of DFM modifications. Alternatively, an iterative process can be performed, where DFM modifications to the layout of an integrated circuit are made in light of test coverage and then test coverage is altered in light of the DFM modifications. Alternatively, DFM modifications to the layout of an integrated circuit can be made in light of test coverage and also diagnostic coverage. In any case, after making DFM modifications and establishing test coverage, any unmodified and untested nodes (and, optionally, any unmodified and undiagnosable tested nodes) in the integrated circuit can be identified and tagged for subsequent in-line inspection.
摘要翻译：披露是基于可制造性，测试覆盖和任选的诊断覆盖的组合的集成电路设计方法的实施例。根据测试覆盖范围，可以对集成电路布局的可制造性（DFM）进行设计修改。或者，可以根据DFM修改建立集成电路的测试覆盖。或者，可以执行迭代处理，其中根据测试覆盖进行DFM对集成电路的布局的修改，然后根据DFM修改来改变测试覆盖。或者，DFM可以根据测试覆盖范围和诊断覆盖范围对集成电路布局进行修改。在任何情况下，在进行DFM修改和建立测试覆盖之后，可以识别和标记集成电路中的任何未修改和未测试的节点（以及可选地，任何未修改和不可判定的测试节点）以便随后的在线检查。

8. 发明授权

US07996810B2 System and method for designing a low leakage monotonic CMOS logic circuit 有权
标题翻译：用于设计低泄漏单调CMOS逻辑电路的系统和方法
公开(公告)号：US07996810B2
公开(公告)日：2011-08-09
申请号：US12103038
申请日：2008-04-15
申请人： Kerry Bernstein , Norman J. Rohrer
发明人： Kerry Bernstein , Norman J. Rohrer
IPC分类号： G06F17/50
CPC分类号： G06F17/505 , H03K19/0016 , H03K19/0948
摘要： A computer system for designing a low leakage monotonic CMOS logic circuit. The system performing the computer implements steps of: (a) specifying a reference PFET having its threshold voltage and its gate dielectric thickness and a reference NFET having its threshold voltage and its gate dielectric thickness; (b) synthesizing a schematic circuit design with standard design elements, the standard design elements including one or more reference PFETS and one or more reference NFETs; (c) analyzing one or more circuits for logic stages having predominantly high input logic states or predominantly low input logic states; (d) selecting one or more logic stages determined to have predominantly high input logic states or predominantly low input logic states; and (e) replacing the standard design elements of the selected logic stages with reduced current leakage elements.
摘要翻译：一种用于设计低泄漏单调CMOS逻辑电路的计算机系统。执行计算机的系统实现以下步骤：（a）指定具有其阈值电压及其栅介质厚度的参考PFET和具有其阈值电压及其栅介质厚度的参考NFET; （b）用标准设计元件合成示意电路设计，标准设计元件包括一个或多个参考PFET和一个或多个参考NFET; （c）分析具有主要为高输入逻辑状态或主要为低输入逻辑状态的逻辑级的一个或多个电路; （d）选择确定为具有主要高输入逻辑状态或主要为低输入逻辑状态的一个或多个逻辑级; 和（e）用减少的电流泄漏元件代替所选逻辑级的标准设计元件。

9. 发明授权

US07642813B2 Error correcting logic system 有权
标题翻译：错误校正逻辑系统
公开(公告)号：US07642813B2
公开(公告)日：2010-01-05
申请号：US11850857
申请日：2007-09-06
申请人： Kerry Bernstein , Philip G. Emma , John A. Fifield , Paul D. Kartschoke , William A. Klaasen , Norman J. Rohrer
发明人： Kerry Bernstein , Philip G. Emma , John A. Fifield , Paul D. Kartschoke , William A. Klaasen , Norman J. Rohrer
IPC分类号： H03K19/20 , H03K19/094 , H03K19/003
CPC分类号： H03K19/007
摘要： The invention includes an error correcting logic system that allows critical circuits to be hardened with only one redundant unit and without loss of circuit performance. The system provides an interconnecting gate that suppresses a fault in one of at least two redundant dynamic logic gates that feed to the interconnecting gate. The system is applicable to dynamic or static logic systems. The system prevents propagation of a fault, and addresses not only soft errors, but noise-induced errors. Also, there is provided a design structure embodied in a machine readable medium used in a design process, and which includes such error correcting logic system.
摘要翻译：本发明包括纠错逻辑系统，其允许仅使用一个冗余单元来硬化关键电路并且不损失电路性能。该系统提供互连门，其抑制馈送到互连门的至少两个冗余动态逻辑门之一的故障。该系统适用于动态或静态逻辑系统。该系统防止故障传播，不仅解决软错误，而且还会引起噪声引起的错误。此外，提供了在设计过程中使用的机器可读介质中体现的设计结构，并且包括这种纠错逻辑系统。

10. 发明申请

US20100011278A1 Soft Error Correction in Sleeping Processors 有权
标题翻译：睡眠处理器软错误校正
公开(公告)号：US20100011278A1
公开(公告)日：2010-01-14
申请号：US12170462
申请日：2008-07-10
申请人： Kerry Bernstein , Norman J. Rohrer
发明人： Kerry Bernstein , Norman J. Rohrer
IPC分类号： H03M13/15 , G06F11/07
CPC分类号： H03M13/15 , G06F11/1008 , H03M13/098 , H03M13/13 , H03M13/1505 , H03M13/19
摘要： An error-correction code is generated on a line-by-line basis of the physical logic register and latch contents that store encoded words within a processor just before the processor is put into sleep mode, and later-generated syndrome bits are checked for any soft errors when the processor wakes back up, e.g., as part of the power-up sequence.
摘要翻译：在处理器进入睡眠模式之前，将物理逻辑寄存器和锁存内容逐行生成在处理器内的处理器内，生成错误校正码，并检查后来生成的校验码位处理器唤醒时出现软错误，例如作为上电顺序的一部分。

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