专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US07642813B2 Error correcting logic system 有权
标题翻译：错误校正逻辑系统
公开(公告)号：US07642813B2
公开(公告)日：2010-01-05
申请号：US11850857
申请日：2007-09-06
申请人： Kerry Bernstein , Philip G. Emma , John A. Fifield , Paul D. Kartschoke , William A. Klaasen , Norman J. Rohrer
发明人： Kerry Bernstein , Philip G. Emma , John A. Fifield , Paul D. Kartschoke , William A. Klaasen , Norman J. Rohrer
IPC分类号： H03K19/20 , H03K19/094 , H03K19/003
CPC分类号： H03K19/007
摘要： The invention includes an error correcting logic system that allows critical circuits to be hardened with only one redundant unit and without loss of circuit performance. The system provides an interconnecting gate that suppresses a fault in one of at least two redundant dynamic logic gates that feed to the interconnecting gate. The system is applicable to dynamic or static logic systems. The system prevents propagation of a fault, and addresses not only soft errors, but noise-induced errors. Also, there is provided a design structure embodied in a machine readable medium used in a design process, and which includes such error correcting logic system.
摘要翻译：本发明包括纠错逻辑系统，其允许仅使用一个冗余单元来硬化关键电路并且不损失电路性能。该系统提供互连门，其抑制馈送到互连门的至少两个冗余动态逻辑门之一的故障。该系统适用于动态或静态逻辑系统。该系统防止故障传播，不仅解决软错误，而且还会引起噪声引起的错误。此外，提供了在设计过程中使用的机器可读介质中体现的设计结构，并且包括这种纠错逻辑系统。

2. 发明授权

US07336102B2 Error correcting logic system 有权
公开(公告)号：US07336102B2
公开(公告)日：2008-02-26
申请号：US10710641
申请日：2004-07-27
申请人： Kerry Bernstein , Philip G. Emma , John A. Fifield , Paul D. Kartschoke , William A. Klaasen , Norman J. Rohrer
发明人： Kerry Bernstein , Philip G. Emma , John A. Fifield , Paul D. Kartschoke , William A. Klaasen , Norman J. Rohrer
IPC分类号： H03K19/20 , H03K19/094 , H03K19/003
CPC分类号： H03K19/007
摘要： The invention includes an error correcting logic system that allows critical circuits to be hardened with only one redundant unit and without loss of circuit performance. The system provides an interconnecting gate that suppresses a fault in one of at least two redundant dynamic logic gates that feed to the interconnecting gate. The system is applicable to dynamic or static logic systems. The system prevents propagation of a fault, and addresses not only soft errors, but noise-induced errors.

3. 发明申请

US20090002015A1 ERROR CORRECTING LOGIC SYSTEM 有权
标题翻译：错误修正逻辑系统
公开(公告)号：US20090002015A1
公开(公告)日：2009-01-01
申请号：US11850857
申请日：2007-09-06
申请人： Kerry Bernstein , Philip G. Emma , John A. Fifield , Paul D. Kartschoke , William A. Klaasen , Norman J. Rohrer
发明人： Kerry Bernstein , Philip G. Emma , John A. Fifield , Paul D. Kartschoke , William A. Klaasen , Norman J. Rohrer
IPC分类号： H03K19/003
CPC分类号： H03K19/007
摘要： The invention includes an error correcting logic system that allows critical circuits to be hardened with only one redundant unit and without loss of circuit performance. The system provides an interconnecting gate that suppresses a fault in one of at least two redundant dynamic logic gates that feed to the interconnecting gate. The system is applicable to dynamic or static logic systems. The system prevents propagation of a fault, and addresses not only soft errors, but noise-induced errors. Also, there is provided a design structure embodied in a machine readable medium used in a design process, and which includes such error correcting logic system.
摘要翻译：本发明包括纠错逻辑系统，其允许仅使用一个冗余单元来硬化关键电路并且不损失电路性能。该系统提供互连门，其抑制馈送到互连门的至少两个冗余动态逻辑门之一的故障。该系统适用于动态或静态逻辑系统。该系统防止故障传播，不仅解决软错误，而且还会引起噪声引起的错误。此外，提供了在设计过程中使用的机器可读介质中体现的设计结构，并且包括这种纠错逻辑系统。

4. 发明授权

US07471115B2 Error correcting logic system 有权
标题翻译：错误校正逻辑系统
公开(公告)号：US07471115B2
公开(公告)日：2008-12-30
申请号：US11926386
申请日：2007-10-29
申请人： Kerry Bernstein , Philip G. Emma , John A. Fifield , Paul D. Kartschoke , William A. Klaasen , Norman J. Rohrer
发明人： Kerry Bernstein , Philip G. Emma , John A. Fifield , Paul D. Kartschoke , William A. Klaasen , Norman J. Rohrer
IPC分类号： H03K19/096 , H03K19/094
CPC分类号： H03K19/007
摘要： The invention includes an error correcting logic system that allows critical circuits to be hardened with only one redundant unit and without loss of circuit performance. The system provides an interconnecting gate that suppresses a fault in one of at least two redundant dynamic logic gates that feed to the interconnecting gate. The system is applicable to dynamic or static logic systems. The system prevents propagation of a fault, and addresses not only soft errors, but noise-induced errors.
摘要翻译：本发明包括纠错逻辑系统，其允许仅使用一个冗余单元来硬化关键电路并且不损失电路性能。该系统提供互连门，其抑制馈送到互连门的至少两个冗余动态逻辑门之一的故障。该系统适用于动态或静态逻辑系统。该系统防止故障传播，不仅解决软错误，而且还会引起噪声引起的错误。

5. 发明授权

US06794901B2 Apparatus for reducing soft errors in dynamic circuits 有权
公开(公告)号：US06794901B2
公开(公告)日：2004-09-21
申请号：US10064921
申请日：2002-08-29
申请人： Kerry Bernstein , Philip G. Emma , John A. Fifield , Paul D. Kartschoke , Norman J. Rohrer , Peter A. Sandon
发明人： Kerry Bernstein , Philip G. Emma , John A. Fifield , Paul D. Kartschoke , Norman J. Rohrer , Peter A. Sandon
IPC分类号： H03K19096
CPC分类号： H03K19/0963 , H03K19/00338
摘要： An integrated circuit that includes a dynamic logic gate having an output node at which a logical output value of the logic gate is detected and also includes a circuit for selectable alteration of the soft error susceptibility of the dynamic logic gate.

6. 发明授权

US07057180B2 Detector for alpha particle or cosmic ray 失效
标题翻译： α粒子或宇宙射线探测器
公开(公告)号：US07057180B2
公开(公告)日：2006-06-06
申请号：US10604416
申请日：2003-07-18
申请人： John A. Fifield , Paul D. Kartschoke , William A. Klaasen , Stephen V. Kosonocky , Randy W. Mann , Jeffery H. Oppold , Norman J. Rohrer
发明人： John A. Fifield , Paul D. Kartschoke , William A. Klaasen , Stephen V. Kosonocky , Randy W. Mann , Jeffery H. Oppold , Norman J. Rohrer
IPC分类号： G01T1/24
CPC分类号： G11C11/4125
摘要： A detector circuit and method for detecting a silicon well voltage or current to indicate an alpha particle or cosmic ray strike of the silicon well. One significant application for the detection circuit of the present invention is for the redundancy repair latches that are used in SRAMs. The redundancy repair latches are normally written once at power-up to record failed latch data and are not normally written again. If one of the latches changes states due to an SER (Soft Error Rate-such as a strike by an alpha particle or cosmic ray) event, the repair data in the redundancy latches of the SRAM would now be incorrectly mapped. The detector circuit and method monitors the latches for the occurrence of an SER event, and responsive thereto issues a reload of the repair data to the redundancy repair latches. A first embodiment of the detector circuit differentially detects the floating voltages of first and second silicon wells during periods of non-operation of the circuits fabricated in the first and second silicon wells. In a second embodiment, a detector circuit monitors the background voltage level of a single silicon well over first and second consecutive periods of time. A second application for the detection circuit is for traditional logic circuits.
摘要翻译：一种用于检测硅阱电压或电流以指示硅阱的α粒子或宇宙射线冲击的检测器电路和方法。本发明的检测电路的一个重要应用是用于SRAM中的冗余修复锁存器。冗余修复锁存器在上电时通常写入一次，以记录失败的锁存数据，并且通常不会再次写入。如果其中一个锁存器由于SER（软错误率（例如α粒子或宇宙射线的击穿））事件而改变状态，则SRAM的冗余锁存器中的修复数据现在将被错误地映射。检测器电路和方法监视锁存器以发生SER事件，并且响应于此，将修复数据重新加载到冗余修复锁存器。检测器电路的第一实施例在第一和第二硅阱中制造的电路的非操作期间差分地检测第一和第二硅阱的浮置电压。在第二实施例中，检测器电路在第一和第二连续时间段内监测单个硅阱的背景电压电平。检测电路的第二个应用是传统的逻辑电路。

7. 发明授权

US06956417B2 Leakage compensation circuit 失效
标题翻译：漏电补偿电路
公开(公告)号：US06956417B2
公开(公告)日：2005-10-18
申请号：US10707123
申请日：2003-11-21
申请人： Kerry Bernstein , Anthony R. Bonaccio , John A. Fifield , Allen P. Haar , Shiu C. Ho , Terence B. Hook , Michael A. Soma , Stephen D. Wyatt
发明人： Kerry Bernstein , Anthony R. Bonaccio , John A. Fifield , Allen P. Haar , Shiu C. Ho , Terence B. Hook , Michael A. Soma , Stephen D. Wyatt
IPC分类号： H03L7/06 , H03L7/089 , H03L7/093
CPC分类号： H03L7/093 , H03L7/0891
摘要： A circuit, including: a capacitor coupled between a first circuit node and a second circuit node and that leaks a leakage current from the first circuit node to the second circuit node; and a compensation circuit adapted to supply a compensatory current to compensate for the leakage current to the first circuit node.
摘要翻译：一种电路，包括：电容器，耦合在第一电路节点和第二电路节点之间，并且泄漏电流从第一电路节点泄漏到第二电路节点; 以及补偿电路，其适于提供补偿电流以补偿到第一电路节点的漏电流。

8. 发明授权

US08724365B2 Programmable semiconductor device 有权
标题翻译：可编程半导体器件
公开(公告)号：US08724365B2
公开(公告)日：2014-05-13
申请号：US13427162
申请日：2012-03-22
申请人： William R. Tonti , Wayne S. Berry , John A. Fifield , William H. Guthrie , Richard S. Kontra
发明人： William R. Tonti , Wayne S. Berry , John A. Fifield , William H. Guthrie , Richard S. Kontra
IPC分类号： G11C17/00
CPC分类号： G11C17/16 , H01L23/5256 , H01L2924/0002 , H01L2924/00
摘要： A programmable device includes a substrate (10); an insulator (13) on the substrate; an elongated semiconductor material (12) on the insulator, the elongated semiconductor material having first and second ends, and an upper surface S; the first end (12a) is substantially wider than the second end (12b), and a metallic material is disposed on the upper surface; the metallic material being physically migratable along the upper surface responsive to an electrical current I flowable through the semiconductor material and the metallic material.
摘要翻译：可编程器件包括衬底（10）; 绝缘体（13）; 绝缘体上的细长半导体材料（12），具有第一和第二端的细长半导体材料和上表面S; 第一端部（12a）比第二端部（12b）大得多，金属材料设置在上表面上; 所述金属材料可响应于流过半导体材料和金属材料的电流I而沿着上表面物理迁移。

9. 发明申请

US20140003164A1 MEMORY ARRAY WITH ON AND OFF-STATE WORDLINE VOLTAGES HAVING DIFFERENT TEMPERATURE COEFFICIENTS 有权
标题翻译：具有开启和关闭状态的存储器阵列具有不同温度系数的字线电压
公开(公告)号：US20140003164A1
公开(公告)日：2014-01-02
申请号：US13534096
申请日：2012-06-27
申请人： John A. Fifield , Mark D. Jacunski
发明人： John A. Fifield , Mark D. Jacunski
IPC分类号： G11C5/14 , H02J1/10 , G11C8/08
CPC分类号： G11C8/08 , G11C7/04 , G11C11/4085 , Y10T307/555
摘要： Disclosed is a memory array structure, where a wordline driver selectively applies a high on-state voltage (VWLH) or a low off-state voltage (VWLL) to a wordline. VWLH has a slightly negative temperature coefficient so that it is regulated as high as the gate dielectric reliability limits allow, whereas VWLL has a substantially neutral temperature coefficient. To accomplish this, the wordline driver is coupled to one or more voltage regulation circuits. In one embodiment, the wordline driver is coupled to a single voltage regulation circuit, which incorporates a single voltage reference circuit having a single output stage that outputs multiple reference voltages. Also disclosed is a voltage reference circuit, which can be incorporated into the voltage regulation circuit of a memory array structure, as described, or, alternatively, into any other integrated circuit structure requiring voltages with different temperature coefficients. Also disclosed is a method of operating a memory array structure.
摘要翻译：公开了一种存储器阵列结构，其中字线驱动器选择性地将高导通状态电压（VWLH）或低关态电压（VWLL）施加到字线。 VWLH具有轻微的负温度系数，使得其受到栅极介电可靠性限制允许的高度调节，而VWLL具有基本上中性的温度系数。为了实现这一点，字线驱动器耦合到一个或多个电压调节电路。在一个实施例中，字线驱动器耦合到单个电压调节电路，其包括具有输出多个参考电压的单个输出级的单个电压参考电路。还公开了一种电压参考电路，其可以结合到如所描述的存储器阵列结构的电压调节电路中，或者可以并入任何其它需要具有不同温度系数的电压的集成电路结构。还公开了一种操作存储器阵列结构的方法。

10. 发明授权

US08027207B2 Leakage compensated reference voltage generation system 有权
标题翻译：泄漏补偿参考电压发生系统
公开(公告)号：US08027207B2
公开(公告)日：2011-09-27
申请号：US12639454
申请日：2009-12-16
申请人： John A. Fifield , Harold Pilo
发明人： John A. Fifield , Harold Pilo
IPC分类号： G11C5/14
CPC分类号： G11C17/16 , G11C5/147 , G11C7/062 , G11C7/12 , G11C17/18 , G11C29/02 , G11C29/021 , G11C29/028
摘要： An e-fuse sense circuit employs a single ended sense scheme in which the reference voltage is compensated for leakage. A reference voltage generator includes a pull-up resistor of similar value to the selected bitline pull-up resistor. As the sensing trip point is adjusted by selection of a bitline pull-up resistor, a pair of pull-up and pull-down resistors are adjusted together to adjust the impedance of the reference voltage generator. A leakage-path simulation structure including a parallel connection of bitcells is added to the reference voltage generator. The leakage-path simulation structure imitates the bitcells on a bitline in the array of e-fuses. Leakage current on the bitline offsets the bitline voltage by a certain error voltage. The reference voltage is also offset by a fraction of the error voltage to balance the shifts in the ‘1’ and ‘0’ margin levels in the presence of leakage.
摘要翻译：电熔丝感测电路采用单端感测方案，其中参考电压被补偿以进行泄漏。参考电压发生器包括与所选位线上拉电阻相似的上拉电阻。由于通过选择位线上拉电阻来调整感测跳变点，一对上拉电阻和下拉电阻一起调节，以调整参考电压发生器的阻抗。包括比特单元的并联连接的泄漏路径模拟结构被添加到参考电压发生器。泄漏路径模拟结构模仿电子熔丝阵列中的位线上的位单元。位线上的漏电流将位线电压抵消一定的误差电压。在存在泄漏的情况下，参考电压也被误差电压的一部分偏移以平衡'1'和'0'余量水平的偏移。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式