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    • 2. 发明授权
    • Superconducting tunnel junction element and superconducting device
    • 超导隧道结元件和超导装置
    • US5885937A
    • 1999-03-23
    • US888657
    • 1997-07-07
    • Hideaki AdachiMasahiro SakaiAkihiro OdagawaKentaro Setsune
    • Hideaki AdachiMasahiro SakaiAkihiro OdagawaKentaro Setsune
    • H01L39/22
    • H01L39/225
    • This invention provides a superconducting tunnel junction element showing satisfactory Josephson effect. The element includes a Bi-based layered compound such as Bi.sub.2 Sr.sub.2 (Ca.sub.0.6 Y.sub.0.4)Cu.sub.2 O.sub.8, Bi.sub.2 Sr.sub.2 Cu.sub.2 O.sub.6 and Bi.sub.2 Sr.sub.2 CaCu.sub.2 O.sub.8 as the barrier layer between the superconducting oxide electrodes. The structural matching of the superconducting oxide with the Bi-based compound is supposed to be good. Some kinds of Cu-based superconducting oxides such as YSr.sub.2 Cu.sub.2.7 Re.sub.0.3 O.sub.7, Sr.sub.2 CaCu.sub.2 O.sub.6 and (La.sub.0.9 Sr.sub.0.1).sub.2 CuO.sub.4 are used for the electrodes to obtain a Josephson element which can work at a high temperature. When using the superconducting oxides including Ba such as YBa.sub.2 Cu.sub.3 O.sub.7 for the electrode, forming a thin film between the electrode and the barrier is better to prevent Ba from reacting with Bi in the barrier layer. The superconducting device comprising the element has various uses such as magnetic detecting use, communicating use and computing use.
    • 本发明提供了一种显示令人满意的约瑟夫逊效应的超导隧道结元件。 元素包括Bi基层状化合物如Bi2Sr2(Ca0.6Y0.4)Cu2O8,Bi2Sr2Cu2O6和Bi2Sr2CaCu2O8作为超导氧化物电极之间的阻挡层。 超导氧化物与Bi基化合物的结构匹配应该是好的。 使用一些种类的Cu基超导氧化物如YSr2Cu2.7Re0.3O7,Sr2CaCu2O6和(La0.9Sr0.1)2CuO4用于电极以获得可在高温下工作的约瑟夫逊元素。 当将包括诸如YBa2Cu3O7的Ba的超导氧化物用于电极时,在电极和势垒之间形成薄膜更好地防止Ba与阻挡层中的Bi反应。 包括该元件的超导装置具有各种用途,例如磁检测使用,通信使用和计算使用。
    • 10. 发明授权
    • High-frequency circuit element having means for interrupting higher order modes
    • 具有用于中断高阶模式的装置的高频电路元件
    • US06741142B1
    • 2004-05-25
    • US09523132
    • 2000-03-10
    • Yasunao OkazakiAkira EnokiharaKentaro Setsune
    • Yasunao OkazakiAkira EnokiharaKentaro Setsune
    • H01P308
    • H01L23/552H01L2924/1616H01L2924/16195H01P1/16
    • A high-frequency circuit element including a substrate, a high-frequency circuit formed on the substrate, a metal box electromagnetically shielding the high-frequency circuit by enclosing the substrate and an input/output terminal placed on the metal box and inputting/outputting a high-frequency signal to/from the high-frequency circuit. Adding at least one plate for interrupting unwanted higher-order mode cutting off the propagation path of the high frequency waves in the space inside the metal box by substantially dividing the space inside the metal box makes it possible to cut off the propagation path where the high frequency waves propagates in the space inside the box and to suppress excitation and propagation of the unwanted higher-order mode that adversely affects the frequency characteristic of the high frequency circuit element.
    • 一种高频电路元件,包括基板,形成在基板上的高频电路,通过封装基板电磁屏蔽高频电路的金属盒和放置在金属盒上的输入/输出端子,以及输入/输出 高频信号往/从高频电路。 添加至少一块用于中断不需要的高阶模式的板,通过基本上划分金属盒内部的空间来切断金属盒内的空间中的高频波的传播路径,使得可以切断传播路径,其中高 频率波在箱内的空间中传播,并且抑制不利地影响高频电路元件的频率特性的不需要的高阶模式的激励和传播。