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1. 发明授权

US5996199A Method of manufacturing surface acoustic ware modules 失效
标题翻译：制造表面声部件模块的方法
公开(公告)号：US5996199A
公开(公告)日：1999-12-07
申请号：US120756
申请日：1998-07-22
申请人： Yo Ichikawa , Hideaki Adachi , Kentaro Setsune , Syunichiro Kawashima
发明人： Yo Ichikawa , Hideaki Adachi , Kentaro Setsune , Syunichiro Kawashima
IPC分类号： H03H3/08 , H03H3/10 , H03H9/02 , H03H9/05 , H03H9/10 , H03H9/25 , H01L41/22
CPC分类号： H03H9/1071 , H03H3/10 , H03H9/02574 , H03H9/02921 , H03H9/25 , Y10T29/42
摘要： A surface acoustic module is stable, and its operation frequencies can be varied with high precision. A method of manufacturing the surface acoustic module prevents the module's electrodes from being broken during separation of a sheet of modules into individual components. The surface acoustic module includes electrodes for transmitting and receiving a surface acoustic wave, a surface acoustic wave transmitting substrate, a high resistance thin film, and a thin film for differentiating the transmission velocity of a surface acoustic wave at the high resistance thin film from that at the substrate. The method includes the steps of forming a metallic film on a sheet of the surface acoustic wave transmitting substrate, of forming the electrodes on the metallic film, and of irradiating light or the like to the metallic film so as to increase the film's resistivity.
摘要翻译：表面声学模块是稳定的，其操作频率可以高精度地变化。制造表面声学模块的方法防止模块的电极在将模块片分离成单个部件期间被破坏。表面声学模块包括用于发送和接收表面声波的电极，表面声波传输基板，高电阻薄膜和用于区分高电阻薄膜处的表面声波的透射速度的薄膜在基板上。该方法包括以下步骤：在表面声波透过基板的片材上形成金属膜，在金属膜上形成电极，以及向金属膜照射光等以提高膜的电阻率。

2. 发明授权

US5757250A Surface acoustic wave module with thin film for wave transmission velocity differentiation 失效
标题翻译：表面声波模块与薄膜波传播速度差分
公开(公告)号：US5757250A
公开(公告)日：1998-05-26
申请号：US795485
申请日：1997-02-11
申请人： Yo Ichikawa , Hideaki Adachi , Kentaro Setsune , Syunichiro Kawashima
发明人： Yo Ichikawa , Hideaki Adachi , Kentaro Setsune , Syunichiro Kawashima
IPC分类号： H03H3/08 , H03H3/10 , H03H9/02 , H03H9/05 , H03H9/10 , H03H9/25
CPC分类号： H03H9/1071 , H03H3/10 , H03H9/02574 , H03H9/02921 , H03H9/25 , Y10T29/42
摘要： A surface acoustic module is stable, and its operation frequencies can be varied with high precision. A method of manufacturing the surface acoustic module prevents the module's electrodes from being broken during separation of a sheet of modules into individual components. The surface acoustic module includes electrodes for transmitting and receiving a surface acoustic wave, a surface acoustic wave transmitting substrate, a high resistance thin film, and a thin film for differentiating the transmission velocity of a surface acoustic wave at the high resistance thin film from that at the substrate. The method includes the steps of forming a metallic film on a sheet of the surface acoustic wave transmitting substrate, of forming the electrodes on the metallic film, and of irradiating light or the like to the metallic film so as to increase the film's resistivity.
摘要翻译：表面声学模块是稳定的，其操作频率可以高精度地变化。制造表面声学模块的方法防止模块的电极在将模块片分离成单个部件期间被破坏。表面声学模块包括用于发送和接收表面声波的电极，表面声波传输基板，高电阻薄膜和用于区分高电阻薄膜处的表面声波的透射速度的薄膜在基板上。该方法包括以下步骤：在表面声波透过基板的片材上形成金属膜，在金属膜上形成电极，以及向金属膜照射光等以提高膜的电阻率。

3. 发明授权

US5815900A Method of manufacturing a surface acoustic wave module 失效
标题翻译：声表面波模块的制造方法
公开(公告)号：US5815900A
公开(公告)日：1998-10-06
申请号：US555744
申请日：1995-11-09
申请人： Yo Ichikawa , Hideaki Adachi , Kentaro Setsune , Syunichiro Kawashima
发明人： Yo Ichikawa , Hideaki Adachi , Kentaro Setsune , Syunichiro Kawashima
IPC分类号： H03H3/08 , H03H3/10 , H03H9/02 , H03H9/05 , H03H9/10 , H03H9/25 , H01L41/22
CPC分类号： H03H9/1071 , H03H3/10 , H03H9/02574 , H03H9/02921 , H03H9/25 , Y10T29/42
摘要： A surface acoustic module is stable, and its operation frequencies can be varied with high precision. A method of manufacturing the surface acoustic module prevents the module's electrodes from being broken during separation of a sheet of modules into individual components. The surface acoustic module includes electrodes for transmitting and receiving a surface acoustic wave, a surface acoustic wave transmitting substrate, a high resistance thin film, and a thin film for differentiating the transmission velocity of a surface acoustic wave at the high resistance thin film from that at the substrate. The method includes the steps of forming a metallic film on a sheet of the surface acoustic wave transmitting substrate, of forming the electrodes on the metallic film, and of irradiating light or the like to the metallic film so as to increase the film's resistivity.
摘要翻译：表面声学模块是稳定的，其操作频率可以高精度地变化。制造表面声学模块的方法防止模块的电极在将模块片分离成单个部件期间被破坏。表面声学模块包括用于发送和接收表面声波的电极，表面声波传输基板，高电阻薄膜和用于区分高电阻薄膜处的表面声波的透射速度的薄膜在基板上。该方法包括以下步骤：在表面声波透过基板的片材上形成金属膜，在金属膜上形成电极，以及向金属膜照射光等以提高膜的电阻率。

4. 发明授权

US5434126A Thin-film high Tc superconductor comprising a ferroelectric buffer layer 失效
标题翻译：包含铁电缓冲层的薄膜高Tc超导体
公开(公告)号：US5434126A
公开(公告)日：1995-07-18
申请号：US217894
申请日：1994-03-25
申请人： Yo Ichikawa , Koichi Mizuno , Toshifumi Sato , Hideaki Adachi , Kentaro Setsune
发明人： Yo Ichikawa , Koichi Mizuno , Toshifumi Sato , Hideaki Adachi , Kentaro Setsune
IPC分类号： C01G1/00 , C30B23/08 , C30B25/06 , C30B29/22 , H01B12/06 , H01L39/02 , H01L39/24 , B32B9/00
CPC分类号： H01L39/2461 , Y10S428/93 , Y10S505/702
摘要： A thin-film superconductor includes a substrate, a ferroelectric film, and a superconducting oxide film. The ferroelectric film extends on the substrate. The ferroelectric film is made of a crystal contains Bi and O. The superconducting oxide film extends on the ferroelectric film, and containing Bi, Cu, and an alkaline-earth metal element. The superconducting oxide film may contain at least two different alkaline-earth metal elements.
摘要翻译：薄膜超导体包括基板，铁电体膜和超导氧化物膜。铁电膜在基板上延伸。铁电体膜由含有Bi和O的晶体制成。超导氧化物膜在铁电体膜上延伸，并含有Bi，Cu和碱土金属元素。超导氧化物膜可以含有至少两种不同的碱土金属元素。

5. 发明授权

US5828079A Field-effect type superconducting device including bi-base oxide compound containing copper 失效
标题翻译：场效应型超导器件包括含铜的二基氧化物化合物
公开(公告)号：US5828079A
公开(公告)日：1998-10-27
申请号：US80726
申请日：1993-06-24
申请人： Koichi Mizuno , Hideaki Adachi , Yo Ichikawa , Kentaro Setsune
发明人： Koichi Mizuno , Hideaki Adachi , Yo Ichikawa , Kentaro Setsune
IPC分类号： H01L39/14 , H01L29/06
CPC分类号： H01L39/146
摘要： A field-effect type superconducting device includes a channel layer. The channel layer includes Bi-based oxide compound containing Cu. A source electrode contacts the channel layer. A drain electrode contacts the channel layer. A gate insulating film made of insulating material extends on on the channel layer. A gate electrode extends on the gate insulating film.
摘要翻译：场效应型超导装置包括沟道层。沟道层包括含有Cu的Bi基氧化物。源电极接触沟道层。漏极接触沟道层。由绝缘材料制成的栅极绝缘膜在沟道层上延伸。栅电极在栅极绝缘膜上延伸。

6. 发明授权

US5885937A Superconducting tunnel junction element and superconducting device 失效
标题翻译：超导隧道结元件和超导装置
公开(公告)号：US5885937A
公开(公告)日：1999-03-23
申请号：US888657
申请日：1997-07-07
申请人： Hideaki Adachi , Masahiro Sakai , Akihiro Odagawa , Kentaro Setsune
发明人： Hideaki Adachi , Masahiro Sakai , Akihiro Odagawa , Kentaro Setsune
IPC分类号： H01L39/22
CPC分类号： H01L39/225
摘要： This invention provides a superconducting tunnel junction element showing satisfactory Josephson effect. The element includes a Bi-based layered compound such as Bi.sub.2 Sr.sub.2 (Ca.sub.0.6 Y.sub.0.4)Cu.sub.2 O.sub.8, Bi.sub.2 Sr.sub.2 Cu.sub.2 O.sub.6 and Bi.sub.2 Sr.sub.2 CaCu.sub.2 O.sub.8 as the barrier layer between the superconducting oxide electrodes. The structural matching of the superconducting oxide with the Bi-based compound is supposed to be good. Some kinds of Cu-based superconducting oxides such as YSr.sub.2 Cu.sub.2.7 Re.sub.0.3 O.sub.7, Sr.sub.2 CaCu.sub.2 O.sub.6 and (La.sub.0.9 Sr.sub.0.1).sub.2 CuO.sub.4 are used for the electrodes to obtain a Josephson element which can work at a high temperature. When using the superconducting oxides including Ba such as YBa.sub.2 Cu.sub.3 O.sub.7 for the electrode, forming a thin film between the electrode and the barrier is better to prevent Ba from reacting with Bi in the barrier layer. The superconducting device comprising the element has various uses such as magnetic detecting use, communicating use and computing use.
摘要翻译：本发明提供了一种显示令人满意的约瑟夫逊效应的超导隧道结元件。元素包括Bi基层状化合物如Bi2Sr2（Ca0.6Y0.4）Cu2O8，Bi2Sr2Cu2O6和Bi2Sr2CaCu2O8作为超导氧化物电极之间的阻挡层。超导氧化物与Bi基化合物的结构匹配应该是好的。使用一些种类的Cu基超导氧化物如YSr2Cu2.7Re0.3O7，Sr2CaCu2O6和（La0.9Sr0.1）2CuO4用于电极以获得可在高温下工作的约瑟夫逊元素。当将包括诸如YBa2Cu3O7的Ba的超导氧化物用于电极时，在电极和势垒之间形成薄膜更好地防止Ba与阻挡层中的Bi反应。包括该元件的超导装置具有各种用途，例如磁检测使用，通信使用和计算使用。

7. 发明授权

US5047390A Josephson devices and process for manufacturing the same 失效
标题翻译：约瑟夫森设备和制造过程相同
公开(公告)号：US5047390A
公开(公告)日：1991-09-10
申请号：US413174
申请日：1989-09-27
申请人： Hidetaka Higashino , Koichi Mizuno , Hideaki Adachi , Kentaro Setsune , Akira Enokihara , Shinichiro Hatta , Kiyotaka Wasa , Shigemi Kohiki , Tomoaki Matsushima
发明人： Hidetaka Higashino , Koichi Mizuno , Hideaki Adachi , Kentaro Setsune , Akira Enokihara , Shinichiro Hatta , Kiyotaka Wasa , Shigemi Kohiki , Tomoaki Matsushima
IPC分类号： H01L39/24
CPC分类号： H01L39/2496 , Y10S505/702 , Y10S505/873 , Y10S505/874
摘要： A Josephson device, comprising a junction formed by forming the first layer-shaped oxide superconductor thin film including a plurality of Cu-O layers on a substrate, a barrier layer thereon and the second layer-shaped oxide superconductor thin film on the barrier layer. The Josephson device according to the present invention is manufactured by forming the first layer-shaped oxide superconductor thin film on a substrate, forming a barrier layer in the same vacuum chamber, defining patterns to said barrier layer and said first layer-shaped oxide superconductor thin film, forming an interlayer insulating film on said barrier layer, removing said interlayer insulating film in a region serving as a junction, effecting exposure to oxygen plasma, forming the second layer-shaped oxide superconductor thin film in contact with a part of the surface of said barrier layer and defining patterns to said second layer-shaped oxide superconductor thin film.

8. 发明授权

US6160266A Superconducting device and a method of manufacturing the same 失效
标题翻译：超导装置及其制造方法
公开(公告)号：US6160266A
公开(公告)日：2000-12-12
申请号：US803940
申请日：1997-02-20
申请人： Akihiro Odagawa , Hideaki Adachi , Kentaro Setsune
发明人： Akihiro Odagawa , Hideaki Adachi , Kentaro Setsune
IPC分类号： H01L39/22 , H01L29/06
CPC分类号： H01L39/225
摘要： This invention provides a superconducting device with good characteristics that can be reproduced at an arbitrary place on a substrate and a method of manufacturing the same. A convex region (a processed, linearly shaped platinum thin film) of oriented metal is provided on a substrate as a gate electrode. Then, an oxide insulating film (SrTiO.sub.3 thin film) is deposited on the convex region, and further a YBa.sub.2 Cu.sub.3 O.sub.7 oxide superconducting thin film is deposited on the oxide insulating film. Accordingly, a grain boundary part is formed on the convex region. A drain electrode and a source electrode are formed facing each other with the grain boundary part between.
摘要翻译：本发明提供一种能够在基板上的任意位置再现的具有良好特性的超导装置及其制造方法。在作为栅电极的基板上设置有取向金属的凸区域（处理后的线状的铂薄膜）。然后，在凸区域上沉积氧化物绝缘膜（SrTiO 3薄膜），再在氧化物绝缘膜上沉积YBa2Cu3O7氧化物超导薄膜。因此，在凸部形成有晶界部。漏电极和源极电极彼此面对地形成，晶界部分在其间。

9. 发明授权

US06147360A Superconducting device and a method of manufacturing the same 失效
标题翻译：超导装置及其制造方法
公开(公告)号：US06147360A
公开(公告)日：2000-11-14
申请号：US82761
申请日：1998-05-21
申请人： Akihiro Odagawa , Hideaki Adachi , Kentaro Setsune
发明人： Akihiro Odagawa , Hideaki Adachi , Kentaro Setsune
IPC分类号： H01L39/22 , H01L29/06
CPC分类号： H01L39/225
摘要： This invention provides a superconducting device with good characteristics that can be reproduced at an arbitrary place on a substrate and a method of manufacturing the same. A convex region (a processed, linearly-shaped platinum thin film) of oriented metal is provided on a substrate as a gate electrode. Then, an oxide insulating film (SrTiO.sub.3 thin film) is deposited on the convex region, and further a YBa.sub.2 Cu.sub.3 O.sub.7 oxide superconducting thin film is deposited on the oxide insulating film. Accordingly, a grain boundary part is formed on the convex region. A drain electrode and a source electrode are formed facing each other with the grain boundary part in between.
摘要翻译：本发明提供一种能够在基板上的任意位置再现的具有良好特性的超导装置及其制造方法。在作为栅电极的基板上设置有取向金属的凸区域（经处理的线状的铂薄膜）。然后，在凸区域上沉积氧化物绝缘膜（SrTiO 3薄膜），再在氧化物绝缘膜上沉积YBa2Cu3O7氧化物超导薄膜。因此，在凸部形成有晶界部。漏极电极和源极电极彼此面对地形成，晶界部分在其间。

10. 发明授权

US5856204A Tunnel-type Josephson element and method for manufacturing the same 失效
标题翻译：隧道式约瑟夫逊元件及其制造方法
公开(公告)号：US5856204A
公开(公告)日：1999-01-05
申请号：US721976
申请日：1996-09-27
申请人： Masahiro Sakai , Hidetaka Higashino , Hideaki Adachi , Kentaro Setsune
发明人： Masahiro Sakai , Hidetaka Higashino , Hideaki Adachi , Kentaro Setsune
IPC分类号： H01L39/22 , H01L21/00
CPC分类号： H01L39/225
摘要： A plurality of single crystal grains made of Bi.sub.2 Sr.sub.2 Ca.sub.1 Cu.sub.2 O.sub.8 which are heat treated at a temperature that is equal to or higher than the crystallization temperature of an oxide high-temperature superconductor made of Bi.sub.2 Sr.sub.2 Ca.sub.1 Cu.sub.2 O.sub.8 and are surrounded by a grain boundary are formed on a substrate made of a MgO single crystal. A convex portion having a sectional area of 400 .mu.m.sup.2 or less and a height which is equal to or less than ten times as much as a space between block layers of Bi.sub.2 Sr.sub.2 Ca.sub.1 Cu.sub.2 O.sub.8 is formed on the upper face portion of the single crystal grain. A first electrode made of Au is formed on the upper face of the convex portion of the single crystal grain, and a second electrode is formed in a region other than the convex portion in the single crystal grain. The first electrode is insulated from the second electrode by an insulating film made of CaF.sub.2.
摘要翻译：由Bi2Sr2Ca1Cu2O8制成的多个由Bi2Sr2Ca1Cu2O8构成的氧化物高温超导体的晶化温度以上的温度进行热处理并被晶界包围的单晶粒子形成在由 MgO单晶。在单晶粒的上表面上形成有截面积为400μm或更小的凸部，其高度等于或小于Bi2Sr2Ca1Cu2O8的阻挡层之间的间隔的十倍。在单晶粒的凸部的上表面上形成由Au构成的第一电极，在单晶粒的凸部以外的区域形成第二电极。第一电极通过由CaF 2制成的绝缘膜与第二电极绝缘。

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