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1. 发明授权

US6045981A Method of manufacturing semiconductor device 失效
标题翻译：制造半导体器件的方法
公开(公告)号：US6045981A
公开(公告)日：2000-04-04
申请号：US19925
申请日：1998-02-06
申请人： Kentaro Matsunaga , Akiko Mimotogi , Shoji Mimotogi , Soichi Inoue
发明人： Kentaro Matsunaga , Akiko Mimotogi , Shoji Mimotogi , Soichi Inoue
IPC分类号： G03F7/26 , G03F7/38 , H01L21/027 , G03F7/00
CPC分类号： G03F7/265 , G03F7/38
摘要： A method of manufacturing a semiconductor device, which comprises the steps of, selectively silylating a photosensitive resin film by exposing the photosensitive resin film according to an exposure pattern thereby to form a silylated portion having a glass transition temperature which is lower than that of the photosensitive resin film and at the same time exposing the photosensitive resin film to an intermediate temperature between the glass transition temperature of the silylated portion and the glass transition temperature of the photosensitive resin film thereby fluidizing the silylated portion so as to cover a portion of the photosensitive resin film neighboring the silylated portion with the fluidized silylated portion, and developing the photosensitive resin film by making use of the silylated portion and the portion of photosensitive resin film covered by the fluidized silylated portion as a mask.
摘要翻译：一种制造半导体器件的方法，其包括以下步骤：通过根据曝光图案曝光感光性树脂膜来选择性地使感光性树脂膜甲硅烷化，从而形成玻璃化转变温度低于光敏树脂膜的甲硅烷基化部分同时使感光性树脂膜暴露于甲硅烷基化部分的玻璃化转变温度与感光性树脂膜的玻璃化转变温度之间的中间温度，由此使甲硅烷基化部分流化，从而覆盖一部分感光性树脂膜与甲硅烷基化部分相邻，并且通过使用甲硅烷基化部分和被流化的甲硅烷基化部分覆盖的部分感光树脂膜作为掩模来显影感光树脂膜。

2. 发明授权

US5876885A Profile simulation method, dependent on curvature of processed surface, and mask design method utilizing simulation 失效
标题翻译：轮廓模拟方法，取决于加工表面的曲率，以及利用模拟的掩模设计方法
公开(公告)号：US5876885A
公开(公告)日：1999-03-02
申请号：US686703
申请日：1996-07-25
申请人： Shoji Mimotogi , Soichi Inoue , Akiko Mimotogi
发明人： Shoji Mimotogi , Soichi Inoue , Akiko Mimotogi
IPC分类号： G01B21/20 , C23F1/00 , G03F1/36 , G03F1/68 , G03F7/20 , H01L21/027 , G03F9/00
CPC分类号： G03F7/705
摘要： The profile simulation method of predicting a processed profile of a surface of a substrate to be changed by physically or chemically processing a film on the substrate to be processed comprises a step of changing a processing speed in correspondence with a convex portion and a recessed portion of the film on the substrate.
摘要翻译：通过物理或化学处理要处理的基板上的膜来改变要改变的基板的表面的处理轮廓的轮廓模拟方法包括以下步骤：将处理速度与凸部和凹部对应地改变底片上的薄膜。

3. 发明授权

US06252651B1 Exposure method and exposure apparatus using it 失效
标题翻译：使用曝光方法和曝光装置
公开(公告)号：US06252651B1
公开(公告)日：2001-06-26
申请号：US09437259
申请日：1999-11-10
申请人： Tadahito Fujisawa , Satoshi Tanaka , Akiko Mimotogi , Shoji Mimotogi , Soichi Inoue
发明人： Tadahito Fujisawa , Satoshi Tanaka , Akiko Mimotogi , Shoji Mimotogi , Soichi Inoue
IPC分类号： G03B2742
CPC分类号： G03F7/70058 , G03F1/26 , G03F7/70425 , H01L21/28123 , H01L21/76816
摘要： An exposure method includes the phase-shifting mask supply step, the phase-shifting mask being prepared by selectively forming a light-shielding portion and a phase shifter on a substrate, and the resist exposure step of performing both exposure of a resist by dark field illumination light and exposure of the resist by bright field illumination light by using the phase-shifting mask, thereby removing residual resist generated by the influence of the edge of the phase shifter.
摘要翻译：曝光方法包括相移掩模提供步骤，通过在基板上选择性地形成遮光部分和移相器来制备相移掩模，以及抗蚀剂曝光步骤，通过暗场曝光抗蚀剂通过使用移相掩模通过亮场照明光照射光和抗蚀剂曝光，从而去除由移相器的边缘的影响产生的残留抗蚀剂。

4. 发明授权

US6107013A Exposure method and exposure apparatus using it 失效
标题翻译：使用曝光方法和曝光装置
公开(公告)号：US6107013A
公开(公告)日：2000-08-22
申请号：US990097
申请日：1997-12-12
申请人： Tadahito Fujisawa , Satoshi Tanaka , Akiko Mimotogi , Shoji Mimotogi , Soichi Inoue
发明人： Tadahito Fujisawa , Satoshi Tanaka , Akiko Mimotogi , Shoji Mimotogi , Soichi Inoue
IPC分类号： G03F1/34 , G03F1/68 , G03F7/20 , H01L21/027 , H01L21/28 , H01L21/768
CPC分类号： G03F7/70058 , G03F7/70425 , H01L21/28123 , G03F1/26 , H01L21/76816
摘要： An exposure method includes the phase-shifting mask supply step, the phase-shifting mask being prepared by selectively forming a light-shielding portion and a phase shifter on a substrate, and the resist exposure step of performing both exposure of a resist by dark field illumination light and exposure of the resist by bright field illumination light by using the phase-shifting mask, thereby removing residual resist generated by the influence of the edge of the phase shifter.
摘要翻译：曝光方法包括相移掩模提供步骤，通过在基板上选择性地形成遮光部分和移相器来制备相移掩模，以及抗蚀剂曝光步骤，通过暗场曝光抗蚀剂通过使用移相掩模通过亮场照明光照射光和抗蚀剂曝光，从而去除由移相器的边缘的影响产生的残留抗蚀剂。

5. 发明申请

US20100261121A1 PATTERN FORMING METHOD 审中-公开
标题翻译：图案形成方法
公开(公告)号：US20100261121A1
公开(公告)日：2010-10-14
申请号：US12717423
申请日：2010-03-04
申请人： Masanori TAKAHASHI , Satoshi Tanaka , Soichi Inoue , Akiko Mimotogi , Katsuyoshi Kodera , Takamasa Takaki
发明人： Masanori TAKAHASHI , Satoshi Tanaka , Soichi Inoue , Akiko Mimotogi , Katsuyoshi Kodera , Takamasa Takaki
IPC分类号： G03F7/20
CPC分类号： G03F1/36
摘要： To provide a pattern forming method comprising: laminating a resist layer on a substrate; forming a diffraction pattern having an opening opened at a predetermined pitch p for diffracting exposure light on an upper layer side of the resist layer; performing whole image exposure with respect to the diffraction pattern in which a refractive index with respect to the exposure light is n, with diffracted light acquired by irradiation of exposure light having a wavelength λ from above the diffraction pattern, which is then diffracted by the diffraction pattern; and forming a desired pattern on a lower layer side of the resist pattern by using a resist pattern formed by developing the resist layer, wherein the predetermined pitch p, the wavelength λ, and the refractive index n satisfy a condition of p>λ/n.
摘要翻译：提供一种图案形成方法，包括：将抗蚀剂层层压在基底上; 形成具有以预定间距p开口的开口的衍射图案，用于将抗蚀剂层的上层侧上的曝光光衍射; 对于相对于曝光光的折射率为n的衍射图案进行全部图像曝光，通过从衍射图案的上方照射具有波长λ的曝光光获得的衍射光，然后通过衍射衍射模式; 并且通过使用通过使抗蚀剂层显影而形成的抗蚀剂图案在抗蚀剂图案的下层侧上形成期望的图案，其中预定间距p，波长λ和折射率n满足p>λ/ n的条件。

6. 发明申请

US20070234269A1 Light intensity distribution simulation method and computer program product 失效
标题翻译：光强分布模拟方法和计算机程序产品
公开(公告)号：US20070234269A1
公开(公告)日：2007-10-04
申请号：US11730102
申请日：2007-03-29
申请人： Satoshi Tanaka , Shoji Mimotogi , Takashi Sato , Soichi Inoue
发明人： Satoshi Tanaka , Shoji Mimotogi , Takashi Sato , Soichi Inoue
IPC分类号： G06F17/50
CPC分类号： G06F17/5009
摘要： A light intensity distribution simulation method for predicting an intensity distribution of light on a substrate when photomask including a pattern is irradiated with light in which a shape distribution of an effective light source is defined includes extracting plural point light sources from a shape distribution of the effective light source, entering the light emitted from each of the plural point light sources onto the pattern of the photomask, calculating an effective shape for each of the plural point light sources, the effective shape being a pattern obtained by excluding a part which is not irradiated with the light directly due to a sidewall of a pattern film including the pattern from a design shape of an aperture of the pattern, and calculating a distribution of diffraction light generated in the pattern for each of the plural point light sources by using the effective shape.
摘要翻译：一种光强度分布模拟方法，用于当定义包含图案的光掩模在基板上的光的强度分布时，其中所述光被定义为其中限定有效光源的形状分布的光包括从有效光源的形状分布中提取多个点光源光源，将从多个点光源中的每一个发射的光输入到光掩模的图案上，计算多个点光源中的每一个的有效形状，有效形状是通过排除未照射的部分获得的图案直接由于来自图案的孔的设计形状的图案的图案膜的侧壁而直接导光，并且通过使用有效形状来计算针对每个多个点光源的图案中产生的衍射光的分布。

7. 发明授权

US5745388A Profile simulation method and pattern design method 失效
标题翻译：轮廓模拟方法和模式设计方法
公开(公告)号：US5745388A
公开(公告)日：1998-04-28
申请号：US551803
申请日：1995-11-07
申请人： Shoji Mimotogi , Soichi Inoue
发明人： Shoji Mimotogi , Soichi Inoue
IPC分类号： G01B11/24 , G03F7/26 , G06F17/50 , G06F19/00 , G06T11/20 , H01L21/00 , H01L21/027 , H01L21/302 , H01L21/3065
CPC分类号： G06F17/5018 , G06T11/203
摘要： A profile simulation method of predicting a profile of a surface of a film to be processed which changes when the surface of the film on a substrate is physically or chemically processed, is characterized by comprising the steps of setting a plurality of representative points on the surface of the film before a process, moving the plurality of representative points in a first direction perpendicular to the surface of the film on the substrate in accordance with processing velocities at the plurality of representative points, switching the moving direction of the representative points from the first direction to a second direction parallel to the surface of the film on the substrate, and moving the plurality of representative points in the second direction in accordance with processing velocities at the plurality of representative points, and setting all loci of the plurality of representative points, which have moved from the first direction to the second direction in a predetermined processing time, as paths, and obtaining a envelope or surface for all the paths as a profile after the process.
摘要翻译：一种轮廓模拟方法，其特征在于包括以下步骤：在所述表面上设置多个代表点，所述轮廓模拟方法用于预测在基材上的所述膜的表面物理或化学处理时改变的被处理膜表面的轮廓，在所述处理之前，根据所述多个代表点处的处理速度，在与所述基板上的所述膜的表面垂直的第一方向上移动所述多个代表点，将所述代表点的移动方向从所述第一方向到平行于基板上的膜表面的第二方向，并且根据多个代表点处的处理速度在第二方向上移动多个代表点，并且设置多个代表点的所有轨迹，它们以预定的p从第一方向移动到第二方向处理时间作为路径，并且在所有过程之后获得用于所有路径的包络或表面作为简档。

8. 发明授权

US07248349B2 Exposure method for correcting a focal point, and a method for manufacturing a semiconductor device 有权
标题翻译：用于校正焦点的曝光方法，以及半导体装置的制造方法
公开(公告)号：US07248349B2
公开(公告)日：2007-07-24
申请号：US11220701
申请日：2005-09-08
申请人： Takashi Sato , Shoji Mimotogi , Takahiro Ikeda , Soichi Inoue
发明人： Takashi Sato , Shoji Mimotogi , Takahiro Ikeda , Soichi Inoue
IPC分类号： G01B9/00 , G01B11/00 , G03F9/00 , G03C5/00
CPC分类号： G03F7/70516
摘要： There is disclosed an exposure method for correcting a focal point, comprising: illuminating a mask, in which a mask-pattern including at least a set of a first mask-pattern and a second mask-pattern mutually different in shape is formed, from a direction in which a point located off an optical axis of an exposure apparatus is a center of illumination, and exposing and projecting an image of said mask-pattern toward an image-receiving element; measuring a mutual relative distance between images of said first and second mask-patterns exposed and projected on said image-receiving element, thereby measuring a focal point of a projecting optical system of said exposure apparatus; and moving said image-receiving element along a direction of said optical axis of said exposure apparatus on a basis of a result of said measurement, and disposing said image-receiving element at an appropriate focal point of said projecting optical system.
摘要翻译：公开了一种用于校正焦点的曝光方法，包括：照射掩模，其中形成包括至少一组第一掩模图案和形成相互不同形状的第二掩模图案的掩模图案使曝光装置的光轴离开的点为照明中心的方向，向图像接收元件曝光和投影所述掩模图案的图像; 测量曝光和投影在所述图像接收元件上的所述第一和第二掩模图案的图像之间的相对相对距离，从而测量所述曝光设备的投影光学系统的焦点; 并且基于所述测量的结果沿所述曝光装置的所述光轴的方向移动所述图像接收元件，并将所述图像接收元件设置在所述投影光学系统的适当焦点处。

9. 发明授权

US5889686A Profile simulation method 失效
标题翻译：轮廓模拟方法
公开(公告)号：US5889686A
公开(公告)日：1999-03-30
申请号：US837890
申请日：1997-04-22
申请人： Shoji Mimotogi , Soichi Inoue
发明人： Shoji Mimotogi , Soichi Inoue
IPC分类号： H01L21/027 , G03F7/26 , G06F17/50 , H01L21/00
CPC分类号： G06F17/5018
摘要： A profile of a developed resist is exactly simulated irrespective of whether or not a resist pattern is dense. A dissolution rate of a film to be processed, which film is provided on a substrate, is varied in accordance with a concentration of a developer and the profile of the developed resist is simulated with use of the varied dissolution rate. In addition, a spatial average of an optical image of a resist, which is averaged in the thickness direction of the resist, is calculated and the dissolution rate of the resist is modulated by using the calculated spatial average. The profile of the resist is simulated by using the modulated dissolution rate. Therefore, the profile of the resist on the substrate, which profile varies when the resist is exposed in a desired pattern and developed, can be exactly estimated.
摘要翻译：无论抗蚀剂图案是否密集，都精确地模拟了显影抗蚀剂的轮廓。根据显影剂的浓度改变待处理的膜的膜，该膜被提供在基板上，并且使用变化的溶解速率来模拟显影抗蚀剂的轮廓。另外，计算抗蚀剂的厚度方向平均的抗蚀剂的光学图像的空间平均，并且通过使用计算的空间平均值来调制抗蚀剂的溶解速率。通过使用调制的溶解速率来模拟抗蚀剂的轮廓。因此，可以精确地估计当抗蚀剂以期望的图案曝光并显影时，轮廓变化的基板上的抗蚀剂的轮廓。

10. 发明授权

US07148138B2 Method of forming contact hole and method of manufacturing semiconductor device 失效
标题翻译：形成接触孔的方法和制造半导体器件的方法
公开(公告)号：US07148138B2
公开(公告)日：2006-12-12
申请号：US10969996
申请日：2004-10-22
申请人： Shoji Mimotogi , Hiroko Nakamura , Kazuya Fukuhara , Satoshi Tanaka , Soichi Inoue
发明人： Shoji Mimotogi , Hiroko Nakamura , Kazuya Fukuhara , Satoshi Tanaka , Soichi Inoue
IPC分类号： H01L21/4763
CPC分类号： G03F7/70425 , G03F7/70466 , H01L21/76816
摘要： A method of forming a contact hole on a substrate by using a projection aligner comprising a lighting system including a light source, an aperture, and a condenser lens, a photo mask on which light from the lighting system is incident, and a projection lens for projecting the light from the photo mask onto the substrate, comprises forming a first photosensitive resist film on the substrate; exposing the first photosensitive resist film by using a photo mask in which mask patterns are cyclically arranged in a first direction and a second direction which is orthogonal to the first direction and a first aperture having light transmission parts arranged symmetrically with respect to a center point in the first direction; developing the exposed first photosensitive resist film to form first lines and linear spaces; forming a second photosensitive resist film on the substrate; exposing the second photosensitive resist film by using the photo mask and a second aperture having light transmission parts arranged symmetrically with respect to a center point in the second direction; and developing the second photosensitive resist film to form second lines and linear spaces which are orthogonal to the first lines and linear spaces.
摘要翻译：一种通过使用包括光源，孔径和聚光透镜的照明系统的投影对准器在基板上形成接触孔的方法，来自照明系统的光入射的光掩模和用于将来自光掩模的光投射到基板上，包括在基板上形成第一光敏抗蚀剂膜; 通过使用掩模图案沿与第一方向正交的第一方向和第二方向循环布置的光掩模曝光第一光敏抗蚀剂膜，以及具有相对于中心点对称布置的光传输部分的第一孔第一个方向显影第一光敏抗蚀剂膜以形成第一线和线性空间; 在所述基板上形成第二光敏抗蚀剂膜; 通过使用光掩模曝光第二光敏抗蚀剂膜，并且具有相对于第二方向的中心点对称布置的透光部分的第二孔; 并显影第二光敏抗蚀剂膜以形成与第一线和线性空间正交的第二线和线性空间。

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