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1. 发明申请

US20100261121A1 PATTERN FORMING METHOD 审中-公开
标题翻译：图案形成方法
公开(公告)号：US20100261121A1
公开(公告)日：2010-10-14
申请号：US12717423
申请日：2010-03-04
申请人： Masanori TAKAHASHI , Satoshi Tanaka , Soichi Inoue , Akiko Mimotogi , Katsuyoshi Kodera , Takamasa Takaki
发明人： Masanori TAKAHASHI , Satoshi Tanaka , Soichi Inoue , Akiko Mimotogi , Katsuyoshi Kodera , Takamasa Takaki
IPC分类号： G03F7/20
CPC分类号： G03F1/36
摘要： To provide a pattern forming method comprising: laminating a resist layer on a substrate; forming a diffraction pattern having an opening opened at a predetermined pitch p for diffracting exposure light on an upper layer side of the resist layer; performing whole image exposure with respect to the diffraction pattern in which a refractive index with respect to the exposure light is n, with diffracted light acquired by irradiation of exposure light having a wavelength λ from above the diffraction pattern, which is then diffracted by the diffraction pattern; and forming a desired pattern on a lower layer side of the resist pattern by using a resist pattern formed by developing the resist layer, wherein the predetermined pitch p, the wavelength λ, and the refractive index n satisfy a condition of p>λ/n.
摘要翻译：提供一种图案形成方法，包括：将抗蚀剂层层压在基底上; 形成具有以预定间距p开口的开口的衍射图案，用于将抗蚀剂层的上层侧上的曝光光衍射; 对于相对于曝光光的折射率为n的衍射图案进行全部图像曝光，通过从衍射图案的上方照射具有波长λ的曝光光获得的衍射光，然后通过衍射衍射模式; 并且通过使用通过使抗蚀剂层显影而形成的抗蚀剂图案在抗蚀剂图案的下层侧上形成期望的图案，其中预定间距p，波长λ和折射率n满足p>λ/ n的条件。

2. 发明授权

US06252651B1 Exposure method and exposure apparatus using it 失效
标题翻译：使用曝光方法和曝光装置
公开(公告)号：US06252651B1
公开(公告)日：2001-06-26
申请号：US09437259
申请日：1999-11-10
申请人： Tadahito Fujisawa , Satoshi Tanaka , Akiko Mimotogi , Shoji Mimotogi , Soichi Inoue
发明人： Tadahito Fujisawa , Satoshi Tanaka , Akiko Mimotogi , Shoji Mimotogi , Soichi Inoue
IPC分类号： G03B2742
CPC分类号： G03F7/70058 , G03F1/26 , G03F7/70425 , H01L21/28123 , H01L21/76816
摘要： An exposure method includes the phase-shifting mask supply step, the phase-shifting mask being prepared by selectively forming a light-shielding portion and a phase shifter on a substrate, and the resist exposure step of performing both exposure of a resist by dark field illumination light and exposure of the resist by bright field illumination light by using the phase-shifting mask, thereby removing residual resist generated by the influence of the edge of the phase shifter.
摘要翻译：曝光方法包括相移掩模提供步骤，通过在基板上选择性地形成遮光部分和移相器来制备相移掩模，以及抗蚀剂曝光步骤，通过暗场曝光抗蚀剂通过使用移相掩模通过亮场照明光照射光和抗蚀剂曝光，从而去除由移相器的边缘的影响产生的残留抗蚀剂。

3. 发明授权

US6107013A Exposure method and exposure apparatus using it 失效
标题翻译：使用曝光方法和曝光装置
公开(公告)号：US6107013A
公开(公告)日：2000-08-22
申请号：US990097
申请日：1997-12-12
申请人： Tadahito Fujisawa , Satoshi Tanaka , Akiko Mimotogi , Shoji Mimotogi , Soichi Inoue
发明人： Tadahito Fujisawa , Satoshi Tanaka , Akiko Mimotogi , Shoji Mimotogi , Soichi Inoue
IPC分类号： G03F1/34 , G03F1/68 , G03F7/20 , H01L21/027 , H01L21/28 , H01L21/768
CPC分类号： G03F7/70058 , G03F7/70425 , H01L21/28123 , G03F1/26 , H01L21/76816
摘要： An exposure method includes the phase-shifting mask supply step, the phase-shifting mask being prepared by selectively forming a light-shielding portion and a phase shifter on a substrate, and the resist exposure step of performing both exposure of a resist by dark field illumination light and exposure of the resist by bright field illumination light by using the phase-shifting mask, thereby removing residual resist generated by the influence of the edge of the phase shifter.
摘要翻译：曝光方法包括相移掩模提供步骤，通过在基板上选择性地形成遮光部分和移相器来制备相移掩模，以及抗蚀剂曝光步骤，通过暗场曝光抗蚀剂通过使用移相掩模通过亮场照明光照射光和抗蚀剂曝光，从而去除由移相器的边缘的影响产生的残留抗蚀剂。

4. 发明授权

US5876885A Profile simulation method, dependent on curvature of processed surface, and mask design method utilizing simulation 失效
标题翻译：轮廓模拟方法，取决于加工表面的曲率，以及利用模拟的掩模设计方法
公开(公告)号：US5876885A
公开(公告)日：1999-03-02
申请号：US686703
申请日：1996-07-25
申请人： Shoji Mimotogi , Soichi Inoue , Akiko Mimotogi
发明人： Shoji Mimotogi , Soichi Inoue , Akiko Mimotogi
IPC分类号： G01B21/20 , C23F1/00 , G03F1/36 , G03F1/68 , G03F7/20 , H01L21/027 , G03F9/00
CPC分类号： G03F7/705
摘要： The profile simulation method of predicting a processed profile of a surface of a substrate to be changed by physically or chemically processing a film on the substrate to be processed comprises a step of changing a processing speed in correspondence with a convex portion and a recessed portion of the film on the substrate.
摘要翻译：通过物理或化学处理要处理的基板上的膜来改变要改变的基板的表面的处理轮廓的轮廓模拟方法包括以下步骤：将处理速度与凸部和凹部对应地改变底片上的薄膜。

5. 发明授权

US6045981A Method of manufacturing semiconductor device 失效
标题翻译：制造半导体器件的方法
公开(公告)号：US6045981A
公开(公告)日：2000-04-04
申请号：US19925
申请日：1998-02-06
申请人： Kentaro Matsunaga , Akiko Mimotogi , Shoji Mimotogi , Soichi Inoue
发明人： Kentaro Matsunaga , Akiko Mimotogi , Shoji Mimotogi , Soichi Inoue
IPC分类号： G03F7/26 , G03F7/38 , H01L21/027 , G03F7/00
CPC分类号： G03F7/265 , G03F7/38
摘要： A method of manufacturing a semiconductor device, which comprises the steps of, selectively silylating a photosensitive resin film by exposing the photosensitive resin film according to an exposure pattern thereby to form a silylated portion having a glass transition temperature which is lower than that of the photosensitive resin film and at the same time exposing the photosensitive resin film to an intermediate temperature between the glass transition temperature of the silylated portion and the glass transition temperature of the photosensitive resin film thereby fluidizing the silylated portion so as to cover a portion of the photosensitive resin film neighboring the silylated portion with the fluidized silylated portion, and developing the photosensitive resin film by making use of the silylated portion and the portion of photosensitive resin film covered by the fluidized silylated portion as a mask.
摘要翻译：一种制造半导体器件的方法，其包括以下步骤：通过根据曝光图案曝光感光性树脂膜来选择性地使感光性树脂膜甲硅烷化，从而形成玻璃化转变温度低于光敏树脂膜的甲硅烷基化部分同时使感光性树脂膜暴露于甲硅烷基化部分的玻璃化转变温度与感光性树脂膜的玻璃化转变温度之间的中间温度，由此使甲硅烷基化部分流化，从而覆盖一部分感光性树脂膜与甲硅烷基化部分相邻，并且通过使用甲硅烷基化部分和被流化的甲硅烷基化部分覆盖的部分感光树脂膜作为掩模来显影感光树脂膜。

6. 发明授权

US08122385B2 Mask pattern correcting method 有权
标题翻译：掩模图案校正方法
公开(公告)号：US08122385B2
公开(公告)日：2012-02-21
申请号：US12129167
申请日：2008-05-29
申请人： Kazuya Fukuhara , Tatsuhiko Higashiki , Toshiya Kotani , Satoshi Tanaka , Takashi Sato , Akiko Mimotogi , Masaki Satake
发明人： Kazuya Fukuhara , Tatsuhiko Higashiki , Toshiya Kotani , Satoshi Tanaka , Takashi Sato , Akiko Mimotogi , Masaki Satake
IPC分类号： G06F17/50
CPC分类号： G03F1/36
摘要： In a model-based OPC which makes a suitable mask correction for each mask pattern using an optical image intensity simulator, a mask pattern is divided into subregions and the model of optical image intensity simulation is changed according to the contents of the pattern in each subregion. When the minimum dimensions of the mask pattern are smaller than a specific threshold value set near the exposure wavelength, the region is calculated using a high-accuracy model and the other regions are calculated using a high-speed model.
摘要翻译：在基于模型的OPC中，使用光学图像强度模拟器对每个掩模图案进行适当的掩模校正，将掩模图案划分为子区域，并且根据每个子区域中的图案的内容来改变光学图像强度模拟模型。当掩模图案的最小尺寸小于在曝光波长附近设置的特定阈值时，使用高精度模型计算该区域，并且使用高速模型来计算其它区域。

7. 发明申请

US20090217233A1 SIMULATION METHOD AND SIMULATION PROGRAM 有权
标题翻译：模拟方法和仿真程序
公开(公告)号：US20090217233A1
公开(公告)日：2009-08-27
申请号：US12395481
申请日：2009-02-27
申请人： Akiko Mimotogi , Satoshi Tanaka , Shoji Mimotogi , Takashi Sato
发明人： Akiko Mimotogi , Satoshi Tanaka , Shoji Mimotogi , Takashi Sato
IPC分类号： G06F17/50
CPC分类号： G03F7/705 , G03F1/36 , G03F1/70
摘要： A method of simulating an optical intensity distribution on a substrate when a mask pattern formed on the mask is transferred to the substrate through a projection optical system by irradiating an illumination light obliquely on a mask surface of the mask, which comprises setting a phase difference between a zero-order diffraction light and a first-order diffraction light determined according to at least one of a distance between the zero-order diffraction light and the first-order diffraction light on a pupil of the projection optical system, thickness of a light-shielding portion formed on the mask, angle defined by an optical axis direction of the illumination light and an incident direction on the mask, and a difference between a size of the mask pattern and a half cycle of the mask pattern, and carrying out a simulation of the optical intensity distribution on the substrate according to the set phase difference.
摘要翻译：当掩模上形成的掩模图案通过投影光学系统通过将照明光倾斜地照射到掩模的掩模表面上时，模拟基板上的光强度分布的方法，该方法包括设置掩模的掩模表面之间的相位差根据投影光学系统的光瞳上的零级衍射光与一级衍射光之间的距离中的至少一个所确定的零级衍射光和一级衍射光，形成在掩模上的屏蔽部分，由照明光的光轴方向和掩模上的入射方向限定的角度以及掩模图案的尺寸与掩模图案的半周期之间的差异，并且进行模拟根据设定的相位差在基板上的光强度分布。

8. 发明授权

US07985517B2 Lithography simulation method, computer program product, and pattern forming method 失效
标题翻译：平版印刷模拟方法，计算机程序产品和图案形成方法
公开(公告)号：US07985517B2
公开(公告)日：2011-07-26
申请号：US12477725
申请日：2009-06-03
申请人： Satoshi Tanaka , Akiko Mimotogi
发明人： Satoshi Tanaka , Akiko Mimotogi
IPC分类号： G03F9/00
CPC分类号： G03F7/705 , G03F1/36
摘要： A lithography simulation method for estimating an optical image to be formed on a substrate when a mask pattern is transferred onto the substrate includes dividing the mask pattern into first calculation areas having sizes determined by a range affected by OPC, the range being obtained correspondingly to an exposure wavelength, a numerical aperture and an illumination shape which are used in the transferring the mask pattern onto the substrate, dividing the each of the first calculation areas into second calculation areas, calculating first electromagnetic field distributions formed by illuminating the mask pattern with exposure light and corresponding to the second calculation areas, obtaining second electromagnetic field distributions corresponding to the first calculation areas by synthesizing the first electromagnetic field distributions for each of the first calculation areas, and calculating the optical image to be formed on the substrate by using the second electromagnetic field distributions.
摘要翻译：当将掩模图案转印到基板上时，用于估计要在衬底上形成的光学图像的光刻模拟方法包括：将掩模图案划分成具有由受OPC影响的范围确定的尺寸的第一计算区域，对应于曝光波长，数值孔径和照明形状，用于将掩模图案转印到基板上，将每个第一计算区域划分成第二计算区域，计算通过用曝光灯照射掩模图案形成的第一电磁场分布并且对应于第二计算区域，通过合成第一计算区域中的每一个的第一电磁场分布来获得与第一计算区域对应的第二电磁场分布，并且通过使用第二电磁场计算要在衬底上形成的光学图像领域分布。

9. 发明申请

US20090305172A1 LITHOGRAPHY SIMULATION METHOD, COMPUTER PROGRAM PRODUCT, AND PATTERN FORMING METHOD 失效
标题翻译：算术模拟方法，计算机程序产品和图案形成方法
公开(公告)号：US20090305172A1
公开(公告)日：2009-12-10
申请号：US12477725
申请日：2009-06-03
申请人： Satoshi Tanaka , Akiko Mimotogi
发明人： Satoshi Tanaka , Akiko Mimotogi
IPC分类号： G03F7/20 , G06F17/50
CPC分类号： G03F7/705 , G03F1/36
摘要： A lithography simulation method for estimating an optical image to be formed on a substrate when a mask pattern is transferred onto the substrate includes dividing the mask pattern into first calculation areas having sizes determined by a range affected by OPC, the range being obtained correspondingly to an exposure wavelength, a numerical aperture and an illumination shape which are used in the transferring the mask pattern onto the substrate, dividing the each of the first calculation areas into second calculation areas, calculating first electromagnetic field distributions formed by illuminating the mask pattern with exposure light and corresponding to the second calculation areas, obtaining second electromagnetic field distributions corresponding to the first calculation areas by synthesizing the first electromagnetic field distributions for each of the first calculation areas, and calculating the optical image to be formed on the substrate by using the second electromagnetic field distributions.
摘要翻译：当将掩模图案转印到基板上时，用于估计要在衬底上形成的光学图像的光刻模拟方法包括：将掩模图案划分成具有由受OPC影响的范围确定的尺寸的第一计算区域，对应于曝光波长，数值孔径和照明形状，用于将掩模图案转印到基板上，将每个第一计算区域划分成第二计算区域，计算通过用曝光灯照射掩模图案形成的第一电磁场分布并且对应于第二计算区域，通过合成第一计算区域中的每一个的第一电磁场分布来获得与第一计算区域对应的第二电磁场分布，并且通过使用第二电磁场计算要在衬底上形成的光学图像领域分布。

10. 发明授权

US08230369B2 Simulation method and simulation program 有权
标题翻译：仿真方法和仿真程序
公开(公告)号：US08230369B2
公开(公告)日：2012-07-24
申请号：US12395481
申请日：2009-02-27
申请人： Akiko Mimotogi , Satoshi Tanaka , Shoji Mimotogi , Takashi Sato
发明人： Akiko Mimotogi , Satoshi Tanaka , Shoji Mimotogi , Takashi Sato
IPC分类号： G06F17/50
CPC分类号： G03F7/705 , G03F1/36 , G03F1/70
摘要： A method of simulating an optical intensity distribution on a substrate when a mask pattern formed on the mask is transferred to the substrate through a projection optical system by irradiating an illumination light obliquely on a mask surface of the mask, which comprises setting a phase difference between a zero-order diffraction light and a first-order diffraction light determined according to at least one of a distance between the zero-order diffraction light and the first-order diffraction light on a pupil of the projection optical system, thickness of a light-shielding portion formed on the mask, angle defined by an optical axis direction of the illumination light and an incident direction on the mask, and a difference between a size of the mask pattern and a half cycle of the mask pattern, and carrying out a simulation of the optical intensity distribution on the substrate according to the set phase difference.
摘要翻译：当掩模上形成的掩模图案通过投影光学系统通过将照明光倾斜地照射到掩模的掩模表面上时，模拟基板上的光强度分布的方法，该方法包括设置掩模的掩模表面之间的相位差根据投影光学系统的光瞳上的零级衍射光与一级衍射光之间的距离中的至少一个所确定的零级衍射光和一级衍射光，形成在掩模上的屏蔽部分，由照明光的光轴方向和掩模上的入射方向限定的角度以及掩模图案的尺寸与掩模图案的半周期之间的差异，并且进行模拟根据设定的相位差在基板上的光强度分布。

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