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1. 发明授权

US08466431B2 Techniques for improving extracted ion beam quality using high-transparency electrodes 有权
标题翻译：使用高透明电极提高离子束质量的技术
公开(公告)号：US08466431B2
公开(公告)日：2013-06-18
申请号：US12370555
申请日：2009-02-12
申请人： James S. Buff , Svetlana Radovanov , Bon-Woong Koo , Wilhelm Platow , Frank Sinclair , D. Jeffrey Lischer , Craig R. Chaney , Steven Borichevsky , Eric R. Cobb , Mayur Jagtap , Kenneth H. Purser , Victor Benveniste , Shardul S. Patel
发明人： James S. Buff , Svetlana Radovanov , Bon-Woong Koo , Wilhelm Platow , Frank Sinclair , D. Jeffrey Lischer , Craig R. Chaney , Steven Borichevsky , Eric R. Cobb , Mayur Jagtap , Kenneth H. Purser , Victor Benveniste , Shardul S. Patel
IPC分类号： H01J37/15 , G21K5/10
CPC分类号： H01J37/3171 , H01J27/024 , H01J37/08 , H01J37/09 , H01J37/304 , H01J2237/0453 , H01J2237/0458 , H01J2237/083 , H01J2237/24542
摘要： Techniques for improving extracted ion beam quality using high-transparency electrodes are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for ion implantation. The apparatus may comprise an ion source for generating an ion beam, wherein the ion source comprises a faceplate with an aperture for the ion beam to travel therethrough. The apparatus may also comprise a set of extraction electrodes comprising at least a suppression electrode and a high-transparency ground electrode, wherein the set of extraction electrodes may extract the ion beam from the ion source via the faceplate, and wherein the high-transparency ground electrode may be configured to optimize gas conductance between the suppression electrode and the high-transparency ground electrode for improved extracted ion beam quality.
摘要翻译：公开了使用高透明电极提高离子束质量的技术。在一个特定的示例性实施例中，技术可以被实现为用于离子注入的装置。该装置可以包括用于产生离子束的离子源，其中离子源包括具有离子束穿过其中的孔的面板。该装置还可以包括至少包括抑制电极和高透明度接地电极的一组提取电极，其中所述提取电极组可以经由面板从离子源提取离子束，并且其中高透明度接地电极可以被配置为优化抑制电极和高透明度接地电极之间的气体传导，以改善提取的离子束质量。

2. 发明授权

US07807983B2 Technique for reducing magnetic fields at an implant location 有权
标题翻译：减少植入位置磁场的技术
公开(公告)号：US07807983B2
公开(公告)日：2010-10-05
申请号：US11622619
申请日：2007-01-12
申请人： Kenneth H. Purser , James S. Buff , Victor Benveniste
发明人： Kenneth H. Purser , James S. Buff , Victor Benveniste
IPC分类号： H01J37/317 , H01J37/141 , H01J37/153
CPC分类号： H01J37/141 , H01J37/153 , H01J37/3171 , H01J2237/1501 , H01J2237/1526 , H01J2237/24528
摘要： A technique for reducing magnetic fields at an implant location is disclosed. In one particular exemplary embodiment, the technique may be realized as an apparatus and method for reducing magnetic fields at an implant location. The apparatus and method may comprise a corrector-bar assembly comprising a set of magnetic core members, a plurality of coils distributed along the set of magnetic core members, and connecting elements to connect ends of the set of magnetic core members with each other to form a rectangular corrector-bar configuration. The corrector-bar assembly may be positioned at an exit region of a magnetic deflector to improve uniformity of a ribbon beam having a plurality of beamlets exiting from the magnetic deflector and the rectangular corrector-bar configuration may provide a desired magnetic field clamping action.
摘要翻译：公开了一种用于在植入位置减小磁场的技术。在一个特定的示例性实施例中，该技术可以被实现为用于减少植入位置处的磁场的装置和方法。该装置和方法可以包括校正棒组件，其包括一组磁芯构件，沿着该组磁芯构件分布的多个线圈，以及连接元件，用于将一组磁芯构件的端部彼此连接以形成一个矩形校正器配置。校正棒组件可以定位在磁偏转器的出口区域处，以改善具有从磁偏转器离开的多个子束的带状束的均匀性，并且矩形校正器配置可以提供期望的磁场夹紧动作。

3. 发明申请

US20080169426A1 Technique for Reducing Magnetic Fields at an Implant Location 有权
标题翻译：在植入位置减少磁场的技术
公开(公告)号：US20080169426A1
公开(公告)日：2008-07-17
申请号：US11622619
申请日：2007-01-12
申请人： Kenneth H. Purser , James S. Buff , Victor Benveniste
发明人： Kenneth H. Purser , James S. Buff , Victor Benveniste
IPC分类号： G21K1/093
CPC分类号： H01J37/141 , H01J37/153 , H01J37/3171 , H01J2237/1501 , H01J2237/1526 , H01J2237/24528
摘要： A technique for reducing magnetic fields at an implant location is disclosed. In one particular exemplary embodiment, the technique may be realized as an apparatus and method for reducing magnetic fields at an implant location. The apparatus and method may comprise a corrector-bar assembly comprising a set of magnetic core members, a plurality of coils distributed along the set of magnetic core members, and connecting elements to connect ends of the set of magnetic core members with each other to form a rectangular corrector-bar configuration. The corrector-bar assembly may be positioned at an exit region of a magnetic deflector to improve uniformity of a ribbon beam having a plurality of beamlets exiting from the magnetic deflector and the rectangular corrector-bar configuration may provide a desired magnetic field clamping action.
摘要翻译：公开了一种用于在植入位置减小磁场的技术。在一个特定的示例性实施例中，该技术可以被实现为用于减少植入位置处的磁场的装置和方法。该装置和方法可以包括校正棒组件，其包括一组磁芯构件，沿着该组磁芯构件分布的多个线圈，以及连接元件，以使该组磁芯构件的端部彼此连接以形成一个矩形校正器配置。校正棒组件可以定位在磁偏转器的出口区域处，以改善具有从磁偏转器离开的多个子束的带状束的均匀性，并且矩形校正器配置可以提供期望的磁场夹紧动作。

4. 发明授权

US08263941B2 Mass analysis magnet for a ribbon beam 有权
标题翻译：质量分析用于带状束的磁体
公开(公告)号：US08263941B2
公开(公告)日：2012-09-11
申请号：US12616589
申请日：2009-11-11
申请人： Victor Benveniste , James S. Buff , Frank Sinclair , Joseph C. Olson
发明人： Victor Benveniste , James S. Buff , Frank Sinclair , Joseph C. Olson
IPC分类号： H01J49/20
CPC分类号： H01J37/05 , H01J37/08 , H01J37/3171 , H01J49/30 , H01J2237/022 , H01J2237/055 , H01J2237/057 , H01J2237/083 , H01J2237/31705
摘要： A ribbon beam mass analyzer having a first and second solenoid coils and steel yoke arrangement. Each of the solenoid coils have a substantially “racetrack” configuration defining a space through which an ion ribbon beam travels. The solenoid coils are spaced apart along the direction of travel of the ribbon beam. Each of the solenoid coils generates a uniform magnetic field to accommodate mass resolution of wide ribbon beams to produce a desired image of ions generated from an ion source.
摘要翻译：带状光束质量分析仪，具有第一和第二电磁线圈和钢轭装置。每个电磁线圈具有大致“跑道”结构，其限定了离子带束通过该空间行进的空间。螺线管线圈沿着带状束的行进方向间隔开。每个电磁线圈产生均匀的磁场以适应宽带束的质量分辨率，以产生从离子源产生的离子的期望图像。

5. 发明申请

US20100116983A1 MASS ANALYSIS MAGNET FOR A RIBBON BEAM 有权
标题翻译： RIBBON梁的质量分析磁铁
公开(公告)号：US20100116983A1
公开(公告)日：2010-05-13
申请号：US12616589
申请日：2009-11-11
申请人： Victor Benveniste , James S. Buff , Frank Sinclair , Joseph C. Olson
发明人： Victor Benveniste , James S. Buff , Frank Sinclair , Joseph C. Olson
IPC分类号： H01J49/30 , G21K5/00 , H01J37/08
CPC分类号： H01J37/05 , H01J37/08 , H01J37/3171 , H01J49/30 , H01J2237/022 , H01J2237/055 , H01J2237/057 , H01J2237/083 , H01J2237/31705
摘要： A ribbon beam mass analyzer having a first and second solenoid coils and steel yoke arrangement. Each of the solenoid coils have a substantially “racetrack” configuration defining a space through which an ion ribbon beam travels. The solenoid coils are spaced apart along the direction of travel of the ribbon beam. Each of the solenoid coils generates a uniform magnetic field to accommodate mass resolution of wide ribbon beams to produce a desired image of ions generated from an ion source.
摘要翻译：带状光束质量分析仪，具有第一和第二电磁线圈和钢轭装置。每个电磁线圈具有大致“跑道”结构，其限定了离子带束通过该空间行进的空间。螺线管线圈沿着带状束的行进方向间隔开。每个电磁线圈产生均匀的磁场以适应宽带束的质量分辨率，以产生从离子源产生的离子的期望图像。

6. 发明申请

US20110240877A1 TEMPERATURE CONTROLLED ION SOURCE 有权
标题翻译：温度控制离子源
公开(公告)号：US20110240877A1
公开(公告)日：2011-10-06
申请号：US12754318
申请日：2010-04-05
申请人： Victor Benveniste , Bon-Woong Koo , Shardul Patel , Frank Sinclair
发明人： Victor Benveniste , Bon-Woong Koo , Shardul Patel , Frank Sinclair
IPC分类号： H01J27/08 , H01J37/317
CPC分类号： H01J37/08 , H01J37/3171 , H01J2237/002
摘要： An ion source is provided that utilizes a cooling plate and a gap interface to control the temperature of an ion source chamber. The gap interface is defined between the cooling plate and a wall of the chamber. A coolant gas is supplied to the interface at a given pressure where the pressure determines thermal conductivity from the cooling plate to the chamber to control the temperature of the interior of the chamber.
摘要翻译：提供了一种利用冷却板和间隙界面来控制离子源室的温度的离子源。间隙界面限定在冷却板和腔室的壁之间。在给定压力下将冷却剂气体供应到界面，其中压力确定从冷却板到室的导热性，以控制室内部的温度。

7. 发明申请

US20080078949A1 Technique for improved ion beam transport 有权
标题翻译：改进离子束传输技术
公开(公告)号：US20080078949A1
公开(公告)日：2008-04-03
申请号：US11529508
申请日：2006-09-29
申请人： Victor Benveniste
发明人： Victor Benveniste
IPC分类号： H01J37/317
CPC分类号： H01J37/3171 , H01J37/05 , H01J2237/004 , H01J2237/028 , H01J2237/04756
摘要： A technique for improved ion implantation is provided. The technique is embodied as an electrostatic filter for an ion implantation device. The electrostatic filter is located just prior to deceleration and may be integrated with a decelerator. Electrodes are used to generate an electric field to separate neutrals from ions. Also, the filter may include active cooling to reduce background gas pressure, a precursor to neutral particle formation. Electrode geometry may also inhibit high energy neutrals from contaminating the target substrate.
摘要翻译：提供了一种改进离子注入技术。该技术被实现为用于离子注入装置的静电过滤器。静电过滤器位于减速之前，可与减速器集成。电极用于产生电场以将中性离子与离子分离。此外，过滤器可以包括主动冷却以降低背景气体压力，即中性粒子形成的前体。电极几何形状还可以抑制高能量中性粒子污染目标衬底。

8. 发明授权

US5814819A System and method for neutralizing an ion beam using water vapor 失效
标题翻译：使用水蒸汽中和离子束的系统和方法
公开(公告)号：US5814819A
公开(公告)日：1998-09-29
申请号：US891688
申请日：1997-07-11
申请人： Frank Sinclair , Victor Benveniste , Jiong Chen
发明人： Frank Sinclair , Victor Benveniste , Jiong Chen
IPC分类号： H01J37/317 , C23C14/48 , G21K1/14 , H01J37/02 , H01J27/02
CPC分类号： H01J37/026 , H01J2237/31701
摘要： An improved ion beam neutralizer (22) is provided for neutralizing the electrical charge of an ion beam (28) output from an extraction aperture (50). The neutralizer comprises a source of water (52); a vaporizer (54) connected to the source of water; a mass flow controller (56) connected to the vaporizer; and an inlet (60) connected to the mass flow controller. The vaporizer (54) converts water from the source (52) from a liquid state to a vapor state. The mass flow controller (56) receives water vapor from the vaporizer (54) and meters the volume of water vapor output by a mass flow controller outlet (66). The inlet (60) is provided with an injection port (68) located proximate the ion beam extraction aperture (50) and receives the metered volume from the outlet (66). The injection port (68) is positioned near the extraction aperture so that the ion beam and the water vapor interact to neutralize the ion beam. The improved ion beam neutralizer (22) is especially effective in low energy (less than ten kilo-electron volts (10 KeV)) beam applications.
摘要翻译：提供改进的离子束中和器（22），用于中和从提取孔（50）输出的离子束（28）的电荷。中和器包括水源（52）; 连接到水源的蒸发器（54）; 连接到蒸发器的质量流量控制器（56）以及连接到质量流量控制器的入口（60）。蒸发器（54）将来自源（52）的水从液态转换为蒸汽状态。质量流量控制器（56）接收来自蒸发器（54）的水蒸汽并且测量由质量流量控制器出口（66）输出的水蒸汽的体积。入口（60）设置有靠近离子束提取孔（50）定位并从出口（66）接收计量体积的注射口（68）。注入口（68）位于提取孔附近，使得离子束和水蒸气相互作用以中和离子束。改进的离子束中和器（22）在低能量（小于十千伏电压（10KeV）））的应用中特别有效。

9. 发明授权

US08188448B2 Temperature controlled ion source 有权
标题翻译：温度控制离子源
公开(公告)号：US08188448B2
公开(公告)日：2012-05-29
申请号：US12754381
申请日：2010-04-05
申请人： Victor Benveniste , Bon-Woong Koo , Shardul Patel , Frank Sinclair
发明人： Victor Benveniste , Bon-Woong Koo , Shardul Patel , Frank Sinclair
IPC分类号： G21K5/10
CPC分类号： H01J37/3171 , H01J37/08 , H01J2237/002
摘要： An ion source is provided that utilizes the same dopant gas supplied to the chamber to generate the desired process plasma to also provide temperature control of the chamber walls during high throughput operations. The ion source includes a chamber having a wall that defines an interior surface. A liner is disposed within the chamber and has at least one orifice to supply the dopant gas to an inside of the chamber. A gap is defined between at least a portion of the interior surface of the chamber wall and the liner. A first conduit is configured to supply dopant gas to the gap where the dopant gas has a flow rate within the gap. A second conduit is configured to remove the dopant gas from the gap, wherein the flow rate of the dopant gas within the gap acts as a heat transfer media to regulate the temperature of the interior of the chamber.
摘要翻译：提供了一种离子源，其利用提供给腔室的相同掺杂剂气体来产生所需的工艺等离子体，以在高通量操作期间提供室壁的温度控制。离子源包括具有限定内表面的壁的室。衬套设置在腔室内并且具有至少一个孔口以将掺杂剂气体供应到腔室的内部。在室壁的内表面的至少一部分和衬垫之间限定间隙。第一管道被配置为向掺杂剂气体在间隙内具有流速的间隙提供掺杂剂气体。第二导管构造成从间隙去除掺杂剂气体，其中间隙内的掺杂剂气体的流速用作传热介质以调节室内部的温度。

10. 发明授权

US07619228B2 Technique for improved ion beam transport 有权
标题翻译：改进离子束传输技术
公开(公告)号：US07619228B2
公开(公告)日：2009-11-17
申请号：US11529508
申请日：2006-09-29
申请人： Victor Benveniste
发明人： Victor Benveniste
IPC分类号： H01J37/317
CPC分类号： H01J37/3171 , H01J37/05 , H01J2237/004 , H01J2237/028 , H01J2237/04756
摘要： A technique for improved ion beam transport is disclosed. In one particular exemplary embodiment, the technique may be realized as an ion implantation system comprising an ion source for generating an ion beam, a mass analyzer for selecting a desired ion species from ion particles the ion beam, an ion decelerator configured to reduce an energy of ions in the ion beam, an end station for supporting at least one workpiece to be implanted with ions from the ion beam, and a neutral particle separator configured to remove neutrally-charged particles from the ion beam prior to reaching the ion decelerator.
摘要翻译：公开了一种用于改进离子束传输的技术。在一个特定的示例性实施例中，该技术可以被实现为包括用于产生离子束的离子源的离子注入系统，用于从离子粒子离子束中选择所需离子种类的质量分析器，被配置为减少能量的离子减速器离子束中的离子的终端站，用于支撑待离子离子的至少一个工件的端站，以及构造成在到达离子减速器之前从离子束去除中性带电粒子的中性粒子分离器。

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