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1. 发明授权

US06545420B1 Plasma reactor using inductive RF coupling, and processes 失效
标题翻译：使用感应式RF耦合的等离子体反应器和工艺
公开(公告)号：US06545420B1
公开(公告)日：2003-04-08
申请号：US08468573
申请日：1995-06-06
申请人： Kenneth S. Collins , Craig A. Roderick , John R. Trow , Chan-Lon Yang , Jerry Yuen-Kui Wong , Jeffrey Marks , Peter R. Keswick , David W. Groechel , Jay D. Pinson, II , Tetsuya Ishikawa , Lawrence Chang-Lai Lei , Masato M. Toshima
发明人： Kenneth S. Collins , Craig A. Roderick , John R. Trow , Chan-Lon Yang , Jerry Yuen-Kui Wong , Jeffrey Marks , Peter R. Keswick , David W. Groechel , Jay D. Pinson, II , Tetsuya Ishikawa , Lawrence Chang-Lai Lei , Masato M. Toshima
IPC分类号： H01J724
CPC分类号： H01J37/32871 , C23C16/509 , C23C16/517 , H01F2029/143 , H01J37/32082 , H01J37/32091 , H01J37/321 , H01J37/3211 , H01J37/32146 , H01J37/32165 , H01J37/32174 , H01J37/3222 , H01J37/32293 , H01J37/32458 , H01J37/32522 , H01J37/3266 , H01J37/32688 , H01J37/32706 , H01L21/31116 , H01L21/6831
摘要： A domed plasma reactor chamber uses an antenna driven by RF energy (LF, MF, or VHF) which is inductively coupled inside the reactor dome. The antenna generates a high density, low energy plasma inside the chamber for etching metals, dielectrics and semiconductor materials. Auxiliary RF bias energy applied to the wafer support cathode controls the cathode sheath voltage and controls the ion energy independent of density. Various magnetic and voltage processing enhancement techniques are disclosed, along with etch processes, deposition processes and combined etch/deposition processed. The disclosed invention provides processing of sensitive devices without damage and without microloading, thus providing increased yields.
摘要翻译：圆顶等离子体反应室使用由RF能量（LF，MF或VHF）驱动的天线，其被感应耦合在反应器穹顶内。天线在室内产生高密度，低能量等离子体，用于蚀刻金属，电介质和半导体材料。施加到晶片支撑阴极的辅助RF偏置能量控制阴极护套电压并且独立于密度来控制离子能量。公开了各种磁和电压处理增强技术，连同蚀刻工艺，沉积工艺和组合蚀刻/沉积处理。所公开的发明提供敏感设备的处理而不损坏和不加载，从而提高产量。

2. 发明授权

US06488807B1 Magnetic confinement in a plasma reactor having an RF bias electrode 失效
标题翻译：具有RF偏置电极的等离子体反应器中的磁约束
公开(公告)号：US06488807B1
公开(公告)日：2002-12-03
申请号：US09563825
申请日：2000-05-03
申请人： Kenneth S. Collins , Chan-Lon Yang , Jerry Yuen-Kui Wong , Jeffrey Marks , Peter R. Keswick , David W. Groechel , Craig A. Roderick , John R. Trow , Tetsuya Ishikawa , Jay D. Pinson, II , Lawrence Chang-Lai Lei , Masato M. Toshima , Gerald Zheyao Yin
发明人： Kenneth S. Collins , Chan-Lon Yang , Jerry Yuen-Kui Wong , Jeffrey Marks , Peter R. Keswick , David W. Groechel , Craig A. Roderick , John R. Trow , Tetsuya Ishikawa , Jay D. Pinson, II , Lawrence Chang-Lai Lei , Masato M. Toshima , Gerald Zheyao Yin
IPC分类号： H05H100
CPC分类号： H01J37/32871 , C23C16/507 , C23C16/517 , H01F2029/143 , H01J37/321 , H01J37/32146 , H01J37/32165 , H01J37/32458 , H01J37/32522 , H01J37/32688 , H01J37/32706 , H01L21/31116 , H01L21/6831
摘要： The invention is embodied in an RF plasma reactor for processing a semiconductor workpiece, including wall structures for containing a plasma therein, a workpiece support, a coil antenna capable of receiving a source RF power signal and being juxtaposed near the chamber, the workpiece support including a bias electrode capable of receiving a bias RF power signal, and first and second magnet structures adjacent the wall structure and in spaced relationship, with one pole of the first magnet structure facing an opposite pole of the second magnet structure, the magnet structures providing a plasma-confining static magnetic field adjacent said wall structure. The invention is also embodied in an RF plasma reactor for processing a semiconductor workpiece, including one or more wall structures for containing a plasma therein, a workpiece support, the workpiece support comprising a lower electrode, an upper electrode facing the lower electrode and spaced across a plasma generation region of said chamber from said lower electrode, and first and second magnet structures adjacent the wall structure and in spaced relationship with one pole of the first magnet structure facing an opposite pole of the second magnet structure, the magnet structures providing a plasma-confining static magnetic field adjacent said wall structure.
摘要翻译：本发明体现在用于处理半导体工件的RF等离子体反应器中，其包括用于在其中容纳等离子体的壁结构，工件支撑件，能够接收源RF功率信号并在该室附近并列的线圈天线，所述工件支撑件包括能够接收偏置RF功率信号的偏置电极，以及与壁结构相邻并且间隔的关系的第一和第二磁体结构，第一磁体结构的一个磁极面对第二磁体结构的相对极，磁体结构提供等离子体约束的静磁场与所述壁结构相邻。本发明还体现在用于处理半导体工件的RF等离子体反应器中，该半导体工件包括一个或多个用于在其中容纳等离子体的壁结构，工件支撑件，工件支撑件包括下电极，上电极面向下电极并间隔开所述腔室的等离子体产生区域与所述下部电极相邻，第一和第二磁体结构邻近所述壁结构并且与所述第一磁体结构的与所述第二磁体结构的相反极的一极相隔开，所述磁体结构提供等离子体围绕所述壁结构保持静止磁场。

3. 发明授权

US06440866B1 Plasma reactor with heated source of a polymer-hardening precursor material 失效
标题翻译：具有聚合物硬化前体材料的加热源的等离子体反应器
公开(公告)号：US06440866B1
公开(公告)日：2002-08-27
申请号：US09595750
申请日：2000-06-16
申请人： Kenneth S. Collins , Michael Rice , David W. Groechel , Gerald Zheyao Yin , Jon Mohn , Craig A. Roderick , Douglas Buchberger , Chan-Lon Yang , Yuen-Kui Wong , Jeffrey Marks , Peter Keswick
发明人： Kenneth S. Collins , Michael Rice , David W. Groechel , Gerald Zheyao Yin , Jon Mohn , Craig A. Roderick , Douglas Buchberger , Chan-Lon Yang , Yuen-Kui Wong , Jeffrey Marks , Peter Keswick
IPC分类号： H01L2100
CPC分类号： H01J37/32871 , C23C16/517 , H01F2029/143 , H01J37/32082 , H01J37/321 , H01J37/32146 , H01J37/32165 , H01J37/32458 , H01J37/32467 , H01J37/32522 , H01J37/32688 , H01J37/32706 , H01J2237/3343 , H01J2237/3345 , H01J2237/3346 , H01J2237/3382 , H01L21/31116 , H01L21/6831
摘要： A general method of the invention is to provide a polymer-hardening precursor piece (such as silicon, carbon, silicon carbide or silicon nitride, but preferably silicon) within the reactor chamber during an etch process with a fluoro-carbon or fluoro-hydrocarbon gas, and to heat the polymer-hardening precursor piece above the polymerization temperature sufficiently to achieve a desired increase in oxide-to-silicon etch selectivity. Generally, this polymer-hardening precursor or silicon piece may be an integral part of the reactor chamber walls and/or ceiling or a separate, expendable and quickly removable piece, and the heating/cooling apparatus may be of any suitable type including apparatus which conductively or remotely heats the silicon piece.
摘要翻译：本发明的一般方法是在与氟碳或氟烃气体的蚀刻过程期间在反应器室内提供聚合物硬化前体件（例如硅，碳，碳化硅或氮化硅，但优选为硅），并且将聚合物硬化前体件高于聚合温度高于氧化硅对硅蚀刻选择性的期望增加。通常，该聚合物硬化前体或硅片可以是反应器室壁和/或天花板的一个整体部分或者单独的，可消耗的和快速可拆卸的部件，并且加热/冷却装置可以是任何合适的类型，包括导电的装置或远程加热硅片。

4. 发明授权

US06171974B2 High selectivity oxide etch process for integrated circuit structures 失效
标题翻译：集成电路结构的高选择性氧化物蚀刻工艺
公开(公告)号：US06171974B2
公开(公告)日：2001-01-09
申请号：US07826310
申请日：1992-01-24
申请人： Jeffrey Marks , Jerry Yuen-Kui Wong , David W. Groechel , Peter R. Keswick , Chan-Lon Yang
发明人： Jeffrey Marks , Jerry Yuen-Kui Wong , David W. Groechel , Peter R. Keswick , Chan-Lon Yang
IPC分类号： H01L21302
CPC分类号： H01L21/67069 , C23C16/517 , H01F2029/143 , H01J37/321 , H01J37/32146 , H01J37/32165 , H01J37/32458 , H01J37/32522 , H01J37/32688 , H01J37/32706 , H01J37/32871 , H01L21/31116 , H01L21/6831
摘要： A plasma etch process for oxide having high selectivity to silicon is disclosed comprising the use of a mixture of SiF4 and one or more other fluorine-containing etch gases in an etch chamber maintained within a pressure range of from about 1 milliTorr to about 200 milliTorr. Preferably, the etch chamber also contains an exposed silicon surface. The plasma may be generated by a capacitive discharge type plasma generator, if pressures of at least about 50 milliTorr are used, but preferably the plasma is generated by an electromagnetically coupled plasma generator. The high selectivity exhibited by the etch process of the invention permits use of an electromagnetically coupled plasma generator which, in turn, permits operation of the etch process at reduced pressures of preferably from about 1 milliTorr to about 30 milliTorr resulting in the etching of vertical sidewall openings in the oxide layer.
摘要翻译：公开了一种对硅具有高选择性的氧化物的等离子体蚀刻工艺，包括在保持在约1毫乇至约200毫乇的压力范围内的蚀刻室中使用SiF 4和一种或多种其它含氟蚀刻气体的混合物。优选地，蚀刻室还包含暴露的硅表面。如果使用至少约50毫乇的压力，则等离子体可以由电容放电型等离子体发生器产生，但优选地，等离子体由电磁耦合等离子体发生器产生。通过本发明的蚀刻工艺表现出的高选择性允许使用电磁耦合等离子体发生器，其进而允许在优选约1毫乇至约30毫乇的减压下进行蚀刻工艺，导致垂直侧壁的蚀刻氧化层中的开口。

5. 发明授权

US6036876A Dry-etching of indium and tin oxides 失效
标题翻译：铟和锡氧化物的干蚀刻
公开(公告)号：US6036876A
公开(公告)日：2000-03-14
申请号：US881950
申请日：1997-06-25
申请人： Jie Chen , Yuen-Kui Wong
发明人： Jie Chen , Yuen-Kui Wong
IPC分类号： H01L21/302 , H01L21/3213 , B44C1/22
CPC分类号： H01L21/32136
摘要： An etch method includes providing a material layer consisting essentially of a group member selected from the group consisting of an indium oxide (InO), a tin oxide (SnO), a mixture of indium and tin oxides, a compound of indium and of tin and of oxygen having the general formulation In.sub.x Sn.sub.y O.sub.z where z is substantially greater than zero but less than 100% and where the sum x+y fills the remainder of the 100%, and a mixture of the preceding ones of the group members. A reactive gas including a halogen-containing compound and an oxygen-containing compound is supplied to a vicinity of the material layer. Also, an electric field is supplied to react the supplied reactive gas with the material layer so as to form volatile byproducts of reactive gas and the material layer.
摘要翻译：蚀刻方法包括提供基本上由选自氧化铟（InO），氧化锡（SnO），铟和锡氧化物的混合物，铟和锡的化合物，铟和锡的化合物和的氧气具有一般配方InxSnyOz，其中z基本上大于零但小于100％，其中和x + y填充100％的剩余部分，以及组成员之前的混合物。将包含含卤化合物和含氧化合物的反应性气体供应到材料层附近。而且，提供电场以使供应的反应性气体与材料层反应，以形成反应性气体和材料层的挥发性副产物。

6. 发明授权

US06444137B1 Method for processing substrates using gaseous silicon scavenger 失效
标题翻译：使用气态硅清除剂处理衬底的方法
公开(公告)号：US06444137B1
公开(公告)日：2002-09-03
申请号：US08673972
申请日：1996-07-01
申请人： Kenneth S. Collins , Chan-Lon Yang , Jerry Yuen-Kui Wong , Jeffrey Marks , Peter R. Keswick , David W. Groechel
发明人： Kenneth S. Collins , Chan-Lon Yang , Jerry Yuen-Kui Wong , Jeffrey Marks , Peter R. Keswick , David W. Groechel
IPC分类号： C23F100
CPC分类号： H01J37/32871 , C23C16/402 , C23C16/509 , C23C16/517 , H01F2029/143 , H01J37/32082 , H01J37/32091 , H01J37/321 , H01J37/3211 , H01J37/32146 , H01J37/32165 , H01J37/32174 , H01J37/3222 , H01J37/32293 , H01J37/32458 , H01J37/32522 , H01J37/3266 , H01J37/32688 , H01J37/32706 , H01J2237/334 , H01L21/31116 , H01L21/6831
摘要： A plasma reactor chamber uses an antenna driven by RF energy (LF, MF, or VHF) which is inductively coupled inside the reactor dome. The antenna generates a high density, low energy plasma inside the chamber for etching oxygen-containing layers overlying non-oxygen-containing layers with high selectivity. Auxiliary RF bias energy applied to the wafer support cathode controls the cathode sheath voltage and controls the ion energy independent of density. Various magnetic and voltage processing enhancement techniques are disclosed, along with other etch processes, deposition processes and combined etch/deposition processes. The disclosed invention provides processing of sensitive devices without damage and without microloading, thus providing increased yields. Etching of an oxygen-containing layer overlying a non-oxygen-containing layer can be achieved with high selectivity.
摘要翻译：等离子体反应室使用由RF能量（LF，MF或VHF）驱动的天线，其被感应耦合在反应堆穹顶内。天线在室内产生高密度，低能量的等离子体，用于以高选择性蚀刻覆盖在非含氧层上的含氧层。施加到晶片支撑阴极的辅助RF偏置能量控制阴极护套电压并且独立于密度来控制离子能量。公开了各种磁和电压处理增强技术，以及其它蚀刻工艺，沉积工艺和组合蚀刻/沉积工艺。所公开的发明提供敏感设备的处理而不损坏和不加载，从而提高产量。可以以高选择性实现覆盖非含氧层的含氧层的蚀刻。

7. 发明授权

US5893757A Tapered profile etching method 失效
标题翻译：锥形轮廓蚀刻方法
公开(公告)号：US5893757A
公开(公告)日：1999-04-13
申请号：US783819
申请日：1997-01-13
申请人： Yuh-Jia Su , Yuen-Kui Wong , Kam S. Law
发明人： Yuh-Jia Su , Yuen-Kui Wong , Kam S. Law
IPC分类号： H01L21/302 , H01L21/3065 , H01L21/3213 , H01L21/00
CPC分类号： H01L21/32136 , H01L21/32137
摘要： A method of etching an article having a substrate, an etchable film and a mask layer having a pattern formed therein includes the step of exposing the article to an etchant gas mixture which includes a halogen-containing gas and an inert gas. An etching profile is formed which is substantially smooth across an interface between the etchable film and the mask layer. The method is particularly useful in producing components of articles such as flat-panel displays.
摘要翻译：蚀刻具有衬底，可蚀刻膜和具有形成在其中的图案的掩模层的制品的方法包括将制品暴露于包括含卤素气体和惰性气体的蚀刻剂气体混合物的步骤。形成蚀刻轮廓，其基本上平滑地跨过可蚀刻膜和掩模层之间的界面。该方法在制造诸如平板显示器的物品的部件中特别有用。

8. 发明授权

US5607602A High-rate dry-etch of indium and tin oxides by hydrogen and halogen radicals such as derived from HCl gas 失效
标题翻译：通过氢和卤素自由基（如衍生自HCl气体）对铟和锡氧化物进行高速干蚀刻
公开(公告)号：US5607602A
公开(公告)日：1997-03-04
申请号：US475709
申请日：1995-06-07
申请人： Yuh-Jia Su , Yuen-Kui Wong , Kam S. Law , Haruhiro Goto
发明人： Yuh-Jia Su , Yuen-Kui Wong , Kam S. Law , Haruhiro Goto
IPC分类号： C01G15/00 , C01G19/02 , C23F4/00 , H01L21/302 , H01L21/3065 , H01L21/3213 , H01L21/461 , H01L31/18 , B44C1/22
CPC分类号： H01L31/1884 , H01L21/32136 , Y02E10/50
摘要： An RIE method and apparatus for etching through the material layer of a transparent-electrode (ITO) in a single continuous step at a rate better than 80 .ANG./min is disclosed. Chamber pressure is maintained at least as low as 30 mTorr. A reactive gas that includes a halogen hydride such as HCl is used alone or in combination with another reactive gas such as Cl.sub.2. Plasma-induced light emissions of reaction products and/or the reactants are monitored to determine the time point of effective etch-through.
摘要翻译：公开了一种在单次连续步骤中以高于80安培/分钟的速率蚀刻通过透明电极（ITO）的材料层的RIE方法和装置。室压力至少保持在30毫托。包括卤素氢化物如HCl的反应性气体单独使用或与另一种反应气体如Cl 2组合使用。监测等离子体诱导的反应产物和/或反应物的光排放，以确定有效蚀刻的时间点。

9. 发明授权

US06399514B1 High temperature silicon surface providing high selectivity in an oxide etch process 失效
标题翻译：高温硅表面在氧化蚀刻工艺中提供高选择性
公开(公告)号：US06399514B1
公开(公告)日：2002-06-04
申请号：US09645924
申请日：2000-08-24
申请人： Jeffrey Marks , Jerry Yuen-Kui Wong , David W. Groechel , Peter R. Keswick , Chan-Lon Yang
发明人： Jeffrey Marks , Jerry Yuen-Kui Wong , David W. Groechel , Peter R. Keswick , Chan-Lon Yang
IPC分类号： H01L21302
CPC分类号： H01L21/67069 , C23C16/517 , H01F2029/143 , H01J37/321 , H01J37/32146 , H01J37/32165 , H01J37/32458 , H01J37/32522 , H01J37/32688 , H01J37/32706 , H01J37/32871 , H01L21/31116 , H01L21/6831
摘要： A plasma process for etching oxide and having a high selectivity to silicon including flowing into a plasma reaction chamber a fluorine-containing etching gas and maintaining a temperature of an exposed silicon surface within said chamber at a temperature of between 200° C. and 300° C. An example of the etching gas includes SiF4 and a fluorocarbon gas. The plasma may be generated by a capacitive discharge type plasma generator or by an electromagnetically coupled plasma generator, such as an inductively coupled plasma generator. The high selectivity exhibited by the etch process permits use of an electromagnetically coupled plasma generator, which in turn permits the etch process to be performed at low pressures of between 1 and 30 milliTorr, resulting the etching of vertical sidewalls in the oxide layer.
摘要翻译：一种用于蚀刻氧化物并具有对硅的高选择性的等离子体工艺，包括流入等离子体反应室中的含氟蚀刻气体，并将所述室内的暴露的硅表面的温度保持在200℃至300℃的温度蚀刻气体的实例包括SiF 4和碳氟化合物气体。等离子体可以由电容放电型等离子体发生器或电磁耦合等离子体发生器（诸如电感耦合等离子体发生器）产生。通过蚀刻工艺表现出的高选择性允许使用电磁耦合等离子体发生器，其进而允许在1至30毫托之间的低压下进行蚀刻工艺，导致蚀刻氧化物层中的垂直侧壁。

10. 发明授权

US06218312B1 Plasma reactor with heated source of a polymer-hardening precursor material 失效
标题翻译：具有聚合物硬化前体材料的加热源的等离子体反应器
公开(公告)号：US06218312B1
公开(公告)日：2001-04-17
申请号：US08987509
申请日：1998-10-08
申请人： Kenneth S. Collins , Michael Rice , David W. Groechel , Gerald Zheyao Yin , Jon Mohn , Craig A. Roderick , Douglas Buchberger , Chan-Lon Yang , Yuen-Kui Wong , Jeffrey Marks , Peter Keswick
发明人： Kenneth S. Collins , Michael Rice , David W. Groechel , Gerald Zheyao Yin , Jon Mohn , Craig A. Roderick , Douglas Buchberger , Chan-Lon Yang , Yuen-Kui Wong , Jeffrey Marks , Peter Keswick
IPC分类号： H01L21302
CPC分类号： H01J37/32871 , C23C16/517 , H01F2029/143 , H01J37/32082 , H01J37/321 , H01J37/32146 , H01J37/32165 , H01J37/32458 , H01J37/32467 , H01J37/32522 , H01J37/32688 , H01J37/32706 , H01J2237/3343 , H01J2237/3345 , H01J2237/3346 , H01J2237/3382 , H01L21/31116 , H01L21/6831
摘要： A general method of the invention is to provide a polymer-hardening precursor piece (such as silicon, carbon, silicon carbide or silicon nitride, but preferably silicon) within the reactor chamber during an etch process with a fluoro-carbon or fluoro-hydrocarbon gas, and to heat the polymer-hardening precursor piece above the polymerization temperature sufficiently to achieve a desired increase in oxide-to-silicon etch selectivity. Generally, this polymer-hardening precursor or silicon piece may be an integral part of the reactor chamber walls and/or ceiling or a separate, expendable and quickly removable piece, and the heating/cooling apparatus may be of any suitable type including apparatus which conductively or remotely heats the silicon piece.
摘要翻译：本发明的一般方法是在与氟碳或氟烃气体的蚀刻过程期间在反应器室内提供聚合物硬化前体件（例如硅，碳，碳化硅或氮化硅，但优选为硅），并且将聚合物硬化前体件高于聚合温度高于氧化硅对硅蚀刻选择性的期望增加。通常，该聚合物硬化前体或硅片可以是反应器室壁和/或天花板的一个整体部分或者单独的，可消耗的和快速可拆卸的部件，并且加热/冷却装置可以是任何合适的类型，包括导电的装置或远程加热硅片。

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