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1. 发明授权

US4257824A Photo-induced temperature gradient zone melting 失效
标题翻译：光诱导温度梯度区熔化
公开(公告)号：US4257824A
公开(公告)日：1981-03-24
申请号：US62350
申请日：1979-07-31
申请人： Kenneth A. Jackson , Lionel C. Kimerling , Harry J. Leamy
发明人： Kenneth A. Jackson , Lionel C. Kimerling , Harry J. Leamy
IPC分类号： H01L21/228 , C30B13/00 , C30B13/06 , C30B13/10 , C30B13/24 , H01L21/24
CPC分类号： H01L21/24 , C30B13/06 , C30B13/10 , C30B13/24 , Y10S117/904
摘要： A temperature gradient zone melting process is disclosed wherein the temperature gradient is established substantially across only the molten zone by preferentially heating the molten zone. In a specific embodiment, the mechanism for inputting heat to the molten zone involves exposing the substrate to optical radiation of a wavelength and magnitude for which the molten zone is absorptive and the remainder of the body is transparent. The molten zone thereby migrates through the body toward the source of optical radiation.
摘要翻译：公开了一种温度梯度区熔融方法，其中通过优先加热熔融区域，基本上仅在熔融区域上建立温度梯度。在具体实施例中，用于向熔融区域输入热量的机构包括使基板暴露于熔融区域吸收的波长和幅度的光辐射，并且身体的其余部分是透明的。熔融区由此通过身体向光辐射源移动。

2. 发明授权

US4234358A Patterned epitaxial regrowth using overlapping pulsed irradiation 失效
标题翻译：使用重叠脉冲照射的图案外延再生长
公开(公告)号：US4234358A
公开(公告)日：1980-11-18
申请号：US27274
申请日：1979-04-05
申请人： George K. Celler , Lionel C. Kimerling , Harry J. Leamy , John M. Poate , George A. Rozgonyi
发明人： George K. Celler , Lionel C. Kimerling , Harry J. Leamy , John M. Poate , George A. Rozgonyi
IPC分类号： H01L21/20 , H01L21/268 , H01L21/26
CPC分类号： H01L21/268 , H01L21/0242 , H01L21/02532 , H01L21/02543 , H01L21/02546 , H01L21/02667 , H01L21/02686 , H01L21/02689 , H01L21/02694 , Y10S117/904 , Y10S117/905 , Y10S148/09 , Y10S148/093
摘要： A technique isdescribed for removing defects and disorder from crystalline layers and the epitaxial regrowth of such layers. The technique involves depositing short term bursts of energy over a limited spatial region of a material thereby annealing the otherwise damaged material and causing it to epitaxially regrow. Subsequent to the short term energy deposition, similar processing is sequentially effected on adjoining and overlapping regions such that a pattern is ultimately "written". This pattern forms a continuous region of essentially single crystal material.
摘要翻译：描述了从结晶层去除缺陷和紊乱以及这些层的外延再生长的技术。该技术涉及在材料的有限空间区域上沉积短期的能量脉冲，从而退火另外损坏的材料并使其外延再生。在短期能量沉积之后，在邻接和重叠的区域上顺序地进行类似的处理，使得模式最终被“写入”。该图案形成基本单晶材料的连续区域。

3. 发明授权

US4238694A Healing radiation defects in semiconductors 失效
标题翻译：治疗半导体辐射缺陷
公开(公告)号：US4238694A
公开(公告)日：1980-12-09
申请号：US799456
申请日：1977-05-23
申请人： Lionel C. Kimerling , Harry J. Leamy , George E. Smith
发明人： Lionel C. Kimerling , Harry J. Leamy , George E. Smith
IPC分类号： G11C13/04 , G11C16/04 , G11C17/16 , H01L21/263 , H01L21/324
CPC分类号： H01L21/263 , G11C13/047 , G11C16/04 , G11C17/16 , H01L21/3245 , Y10S148/046 , Y10S148/055 , Y10S148/093
摘要： The rate at which radiation defects in semi-conductors are annealed is enhanced by various electronic mechanisms. These effects can be used to program device arrays in which all devices are initially damaged, then selected devices are activated by addressing them electrically through the individual device contacts.
摘要翻译：半导体中的辐射缺陷退火的速率通过各种电子机制增强。这些效果可用于对所有器件最初损坏的器件阵列进行编程，然后通过各个器件触点对器件阵列进行电气寻址来激活所选器件。

4. 发明授权

US4266986A Passivation of defects in laser annealed semiconductors 失效
标题翻译：激光退火半导体缺陷的钝化
公开(公告)号：US4266986A
公开(公告)日：1981-05-12
申请号：US98398
申请日：1979-11-29
申请人： Janet L. Benton , Charles J. Doherty , Lionel C. Kimerling , Harry J. Leamy
发明人： Janet L. Benton , Charles J. Doherty , Lionel C. Kimerling , Harry J. Leamy
IPC分类号： H01L21/268 , H01L21/30 , H01L21/265
CPC分类号： H01L21/268 , H01L21/3003 , Y10S148/024 , Y10S148/09 , Y10S148/093
摘要： The application describes a technique for passivating point defects that are characteristic of laser annealed semiconductors. According to the technique, the laser annealed material is treated with atomic hydrogen to electrically deactivate the defects.
摘要翻译：该应用描述了激光退火半导体的特征的钝化点缺陷的技术。根据该技术，激光退火材料用原子氢处理以使缺陷电去活化。

5. 发明授权

US4406709A Method of increasing the grain size of polycrystalline materials by directed energy-beams 失效
标题翻译：通过定向能量束增加多晶材料的晶粒尺寸的方法
公开(公告)号：US4406709A
公开(公告)日：1983-09-27
申请号：US276932
申请日：1981-06-24
申请人： George K. Celler , Harry J. Leamy , Lee E. Trimble
发明人： George K. Celler , Harry J. Leamy , Lee E. Trimble
IPC分类号： C30B1/08 , H01L21/263 , H01L21/268 , H01L21/423 , H01L21/428
CPC分类号： H01L21/428 , C30B1/08 , H01L21/2636 , H01L21/268 , H01L21/423 , Y10S117/904 , Y10S117/905
摘要： Crystal grain size in a material is increased by scanning the material with an appropriately directed energy beam. Short-term oscillation in the scan, and a particular temperature gradient configuration in the wake of the scan, results in growth of large-grain crystallites.
摘要翻译：通过用适当定向的能量束扫描材料来增加材料中的晶粒尺寸。扫描中的短期振荡以及扫描后的特定温度梯度结构导致大晶粒微晶的生长。

6. 发明授权

US4380865A Method of forming dielectrically isolated silicon semiconductor materials utilizing porous silicon formation 失效
标题翻译：利用多孔硅形成形成介电隔离的硅半导体材料的方法
公开(公告)号：US4380865A
公开(公告)日：1983-04-26
申请号：US321263
申请日：1981-11-13
申请人： Robert C. Frye , Harry J. Leamy
发明人： Robert C. Frye , Harry J. Leamy
IPC分类号： H01L27/00 , H01L21/205 , H01L21/306 , H01L21/31 , H01L21/331 , H01L21/76 , H01L21/762 , H01L29/73 , H01L21/20
CPC分类号： H01L21/76297 , H01L21/306
摘要： Dielectrically isolated areas of single crystalline silicon suitable for use in device applications have been produced utilizing a particular processing sequence. This sequence first involves producing an area of porous silicon on a silicon substrate. A single crystal region of silicon is then formed on the porous silicon through procedures such as molecular beam epitaxy, chemical vapor deposition or laser fusion. The region of the porous silicon under the single crystal silicon is then oxidized in a specifically controlled manner to form an insulator.
摘要翻译：适用于器件应用的单晶硅的绝缘隔离区域已经利用特定的处理顺序生产。该序列首先涉及在硅衬底上产生多孔硅的区域。然后通过诸如分子束外延，化学气相沉积或激光熔化的方法在多孔硅上形成单晶硅区域。单晶硅下面的多孔硅的区域然后以特定的控制方式被氧化以形成绝缘体。

7. 发明授权

US4670086A Process for the growth of structures based on group IV semiconductor materials 失效
标题翻译：基于IV族半导体材料的结构生长工艺
公开(公告)号：US4670086A
公开(公告)日：1987-06-02
申请号：US744889
申请日：1985-06-14
申请人： Harry J. Leamy
发明人： Harry J. Leamy
IPC分类号： C30B1/02 , C30B13/00 , C30B13/34 , C30B1/08
CPC分类号： C30B13/34 , C30B1/026 , C30B13/00 , C30B29/60
摘要： Single crystal layers of Group IV semiconductor materials, such as silicon, are grown on insulating substrates. The fabrication of this structure is achieved by forming on a single crystal substrate a layer of an insulating material, such as a silicon oxide. A small via hole is produced in the insulating layer to leave a portion of the underlying substrate uncovered. A precursor material is deposited on the insulating layer so that it covers at least a portion of the insulating layer and also contacts the substrate at the via hole. The precursor layer is then formed into a single crystal by inducing growth on the substrate at the via hole and propagating this growth through the precursor layer.
摘要翻译： IV族半导体材料（如硅）的单晶层生长在绝缘基板上。该结构的制造通过在单晶衬底上形成诸如氧化硅等绝缘材料的层来实现。在绝缘层中产生小的通孔，以使未覆盖的底层衬底的一部分。前体材料沉积在绝缘层上，使得其覆盖绝缘层的至少一部分并且还在通孔处接触基板。然后通过在通孔处诱导基底上的生长并将该生长传播通过前体层，将前体层形成为单晶。

8. 发明授权

US4364778A Formation of multilayer dopant distributions in a semiconductor 失效
标题翻译：在半导体中形成多层掺杂剂分布
公开(公告)号：US4364778A
公开(公告)日：1982-12-21
申请号：US154855
申请日：1980-05-30
申请人： Harry J. Leamy , Thomas E. Seidel
发明人： Harry J. Leamy , Thomas E. Seidel
IPC分类号： H01L21/228 , H01L7/34 , H01L21/265
CPC分类号： H01L21/228
摘要： A method of making solid state devices having multilayer dopant distributions, including p-p+ and n-n+ junctions, etc. A semiconductor body is rapidly melted, typically by a laser, electron beam, or ion beam. Present in the melt is a first dopant having a low segregation coefficient and a second dopant having a high segregation coefficient. During rapid resolidification of the melt, the first dopant segregates toward the surface, while the second dopant remains substantially in place, producing a junction. The production of diodes, bipolar and field effect transistors, Schottky barriers, ohmic contacts, junction isolated surface regions, high conductivity paths, etc., is possible by this method.
摘要翻译：制造具有多层掺杂剂分布的固态器件的方法，包括p-p +和n-n +结等。半导体主体通常通过激光，电子束或离子束而迅速熔化。存在于熔体中的是具有低偏析系数的第一掺杂剂和具有高偏析系数的第二掺杂剂。在熔体的快速再凝固期间，第一掺杂剂朝向表面偏析，而第二掺杂剂保持基本就位，产生结。通过该方法，可以制造二极管，双极和场效应晶体管，肖特基势垒，欧姆接触，结隔离表面区域，高导电性路径等。

9. 发明授权

US4273594A Gallium arsenide devices having reduced surface recombination velocity 失效
标题翻译：具有降低的表面复合速度的砷化镓器件
公开(公告)号：US4273594A
公开(公告)日：1981-06-16
申请号：US82002
申请日：1979-10-05
申请人： Adam Heller , Harry J. Leamy , Barry Miller , Ronald J. Nelson , Bruce A. Parkinson
发明人： Adam Heller , Harry J. Leamy , Barry Miller , Ronald J. Nelson , Bruce A. Parkinson
IPC分类号： H01L29/207 , H01L31/07 , H01L31/18 , H01L31/04 , H01L21/306
CPC分类号： H01L31/07 , H01L29/207 , H01L31/184 , Y02E10/544 , Y10S438/904 , Y10T428/12528
摘要： Semiconductor devices using chemically treated n-type GaAs have greatly reduced surface recombination velocities. A preferred embodiment uses fractional monolayers of ruthenium on the GaAs surface.
摘要翻译：使用化学处理的n型GaAs的半导体器件大大降低了表面复合速度。优选的实施方案在GaAs表面上使用钌的分数单层。

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