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1. 发明申请

US20190237556A1 STRUCTURE, METHOD FOR MANUFACTURING SAME, SEMICONDUCTOR ELEMENT, AND ELECTRONIC CIRCUIT 审中-公开
公开(公告)号：US20190237556A1
公开(公告)日：2019-08-01
申请号：US16341055
申请日：2017-10-11
申请人： Idemitsu Kosan Co., Ltd.
发明人： Yuki TSURUMA , Emi KAWASHIMA , Yoshikazu NAGASAKI , Takashi SEKIYA , Yoshihiro UEOKA
IPC分类号： H01L29/47 , H01L27/146 , H01L29/78 , H01L29/812 , H01L29/872 , H01L31/07 , H01L31/108
CPC分类号： H01L29/47 , H01L27/146 , H01L29/78 , H01L29/812 , H01L29/872 , H01L31/07 , H01L31/10 , H01L31/108 , Y02E10/50
摘要： A structure including a metal oxide semiconductor layer and a noble metal oxide layer, wherein the metal oxide semiconductor layer and the noble metal oxide layer are adjacent to each other, and a film thickness of the noble metal oxide layer is more than 10 nm.

2. 发明申请

US20180315878A1 Photovoltaic Device Based on Ag2ZnSn(S,Se)4 Absorber 审中-公开
公开(公告)号：US20180315878A1
公开(公告)日：2018-11-01
申请号：US16028249
申请日：2018-07-05
申请人： International Business Machines Corporation
发明人： Talia S. Gershon , Supratik Guha , Oki Gunawan , Richard A. Haight , Yun Seog Lee
IPC分类号： H01L31/072 , H01L31/032 , H01L21/02 , H01L31/0392 , H01L31/07
CPC分类号： H01L31/072 , H01L21/02557 , H01L21/0256 , H01L21/02568 , H01L21/02579 , H01L21/0262 , H01L31/0326 , H01L31/0327 , H01L31/0392 , H01L31/07 , Y02E10/50
摘要： Photovoltaic devices based on an Ag2ZnSn(S,Se)4 (AZTSSe) absorber and techniques for formation thereof are provided. In one aspect, a method for forming a photovoltaic device includes the steps of: coating a substrate with a conductive layer; contacting the substrate with an Ag source, a Zn source, a Sn source, and at least one of a S source and a Se source under conditions sufficient to form an absorber layer on the conductive layer having Ag, Zn, Sn, and at least one of S and Se; and annealing the absorber layer. Methods of doping the AZTSSe are provided. A photovoltaic device is also provided.

3. 发明申请

US20180182752A1 SUPER CMOS DEVICES ON A MICROELECTRONICS SYSTEM 审中-公开
公开(公告)号：US20180182752A1
公开(公告)日：2018-06-28
申请号：US15799921
申请日：2017-10-31
申请人： SCHOTTKY LSI, INC.
发明人： AUGUSTINE WEI-CHUN CHANG
IPC分类号： H01L27/06 , H01L29/872 , H01L27/112 , H01L31/0376 , H01L27/11526 , H01L31/07 , H01L29/66 , H01L21/8238
CPC分类号： H01L27/0629 , H01L21/8238 , H01L25/065 , H01L27/0207 , H01L27/0727 , H01L27/105 , H01L27/10897 , H01L27/112 , H01L27/11253 , H01L27/11286 , H01L27/11293 , H01L27/11526 , H01L27/11546 , H01L27/11807 , H01L28/20 , H01L29/66143 , H01L29/872 , H01L31/032 , H01L31/0376 , H01L31/03762 , H01L31/07 , H01L31/072 , H01L31/074 , H01L2924/0002 , H03K19/17728 , Y02E10/50 , H01L2924/00
摘要： A low cost IC solution is disclosed to provide Super CMOS microelectronics macros. Hereinafter, the Super CMOS or Schottky CMOS all refer to SCMOS. The SCMOS device solutions with a niche circuit element, the complementary low threshold Schottky barrier diode pairs (SBD) made by selected metal barrier contacts (Co/Ti) to P- and N—Si beds of the CMOS transistors. A DTL like new circuit topology and designed wide contents of broad product libraries, which used the integrated SBD and transistors (BJT, CMOS, and Flash versions) as basic components. The macros include diodes that are selectively attached to the diffusion bed of the transistors, configuring them to form generic logic gates, memory cores, and analog functional blocks from simple to the complicated, from discrete components to all grades of VLSI chips. Solar photon voltaic electricity conversion and bio-lab-on-a-chip are two newly extended fields of the SCMOS IC applications.

4. 发明申请

US20180076405A1 PHOTODETECTORS AND PHOTOVOLTAICS BASED ON SEMICONDUCTOR NANOCRYSTALS 审中-公开
公开(公告)号：US20180076405A1
公开(公告)日：2018-03-15
申请号：US15675337
申请日：2017-08-11
申请人： INVISAGE TECHNOLOGIES, INC
发明人： Edward Hartley Sargent , Ghada Koleilat , Larissa Levina
IPC分类号： H01L51/42 , H01L31/0384 , B82Y20/00 , B82Y30/00 , H01L31/032 , H01L51/44 , H01L31/07 , H01L31/0352 , H01L51/00
CPC分类号： H01L51/4213 , B82Y20/00 , B82Y30/00 , H01L31/0322 , H01L31/0324 , H01L31/0352 , H01L31/0384 , H01L31/07 , H01L51/0046 , H01L51/0084 , H01L51/441 , Y02E10/541 , Y02P70/521
摘要： A composite material is described. The composite material comprises semiconductor nanocrystals, and organic molecules that passivate the surfaces of the semiconductor nanocrystals. One or more properties of the organic molecules facilitate the transfer of charge between the semiconductor nanocrystals. A semiconductor material is described that comprises p-type semiconductor material including semiconductor nanocrystals. At least one property of the semiconductor material results in a mobility of electrons in the semiconductor material being greater than or equal to a mobility of holes. A semiconductor material is described that comprises n-type semiconductor material including semiconductor nanocrystals. At least one property of the semiconductor material results in a mobility of holes in the semiconductor material being greater than or equal to a mobility of electrons.

5. 发明授权

US09660117B1 Energy selective photodetector 有权
公开(公告)号：US09660117B1
公开(公告)日：2017-05-23
申请号：US15269168
申请日：2016-09-19
申请人： Sharp Kabushiki Kaisha
发明人： James Andrew Robert Dimmock , Matthias Kauer , Nicholas J. Ekins-Daukes , Paul N. Stavrinou
IPC分类号： H01L31/00 , H01L31/0352 , H01L31/0232 , H01L31/108 , H01L31/0304 , H01L31/02 , H01L31/0216
CPC分类号： H01L31/035227 , H01L31/02 , H01L31/02161 , H01L31/02168 , H01L31/022408 , H01L31/022425 , H01L31/02327 , H01L31/03046 , H01L31/035209 , H01L31/07 , H01L31/108 , H01L31/1085 , Y02E10/50
摘要： A semiconductor device has a layered structure. The semiconductor device includes a metallic layer of thickness 1-100 nm, with a thickness optimized to absorb light in a wavelength range of operation. The device further includes an adjacent semiconductor layer additionally adjacent to an ohmic electrical contact, wherein the interface between the metallic layer and the semiconductor layer is electrically rectifying and energy selective. The device further includes a reflective back surface positioned opposite to the semiconductor layer relative to incident light providing broadband reflection in the wavelength range of operation. The semiconductor layer includes a quantum well adjacent to the metallic layer, wherein the energy selectivity is provided by the quantum well allowing charge carrier tunneling from the metallic layer. The device further may include an additional anti-reflection dielectric layer deposited on the metallic layer that is configured to minimize reflection of light in the wavelength range of operation.

6. 发明申请

US20160336474A1 METHODS OF FORMING COLLOIDAL NANOCRYSTAL-BASED THIN FILM DEVICES 审中-公开
标题翻译：形成基于纳米晶体的薄膜装置的方法
公开(公告)号：US20160336474A1
公开(公告)日：2016-11-17
申请号：US15150824
申请日：2016-05-10
申请人： THE TRUSTEES OF THE UNIVERSITY OF PENNSYLVANIA
发明人： CHERIE R. KAGAN , AARON T. FAFARMAN , JI-HYUK CHOI , WEON-KYU KOH , DAVID K. KIM , SOONG JU OH , YUMING LAI , SUNG-HOON HONG , SANGAMESHWAR RAO SAUDARI , CHRISTOPHER B. MURRAY
IPC分类号： H01L31/07 , H01L31/032
CPC分类号： H01L31/07 , B82Y10/00 , B82Y20/00 , B82Y40/00 , H01B1/06 , H01L29/0665 , H01L29/127 , H01L29/18 , H01L29/22 , H01L29/2203 , H01L29/24 , H01L29/413 , H01L29/45 , H01L29/4908 , H01L29/66969 , H01L29/78603 , H01L29/78681 , H01L31/0324 , H01L31/18 , Y02E10/50 , Y10S977/891 , Y10S977/938 , Y10S977/954
摘要： Methods of forming colloidal nanocrystal (NC)-based thin film devicesare disclosed. The methods include the steps of depositing a dispersion of NCs on a substrate to form a NC thin-film, wherein at least a portion of the NCs is capped with chalcogenocyanate (xCN)-based ligands; and doping the NC thin-film with a metal.
摘要翻译：公开了形成胶体纳米晶体（NC）的薄膜器件的方法。所述方法包括以下步骤：将NC分散体沉积在基底上以形成NC薄膜，其中至少部分NC用硫属异氰酸酯（xCN）为基础的配体封端; 并用金属掺杂NC薄膜。

7. 发明申请

US20160268467A1 METALLIC PHOTOVOLTAICS 审中-公开
标题翻译：金属光伏
公开(公告)号：US20160268467A1
公开(公告)日：2016-09-15
申请号：US14550167
申请日：2014-11-21
申请人： Massachusetts Institute of Technology
发明人： Jesse H Mills , Jeremy S. Coombs , Joshua L. Wilson , Mark A. Hollis , Franz Busse , Kenneth Alexander Diest
IPC分类号： H01L31/07 , H01L31/18 , H01L31/054
CPC分类号： H01L31/07 , H01L31/0547 , H01L31/056 , H01L31/0687 , H01L31/18 , Y02E10/52 , Y02E10/544
摘要： According to some aspects, an apparatus for converting electromagnetic radiation into electric power is provided, comprising a first layer comprising a first semiconductor material, an absorber in contact with the first layer, a second layer comprising a second semiconductor material, the second layer being in contact with the absorber, and a reflector to reflect at least a portion of electromagnetic radiation passing through the second layer. According to some aspects, a method of forming an apparatus for converting electromagnetic radiation into electric power is provided, comprising forming a reflector on a substrate, forming a first layer in contact with the reflector, the first layer comprising a first semiconductor material, forming an absorber in contact with the first layer, and forming a second layer in contact with the absorber, the second layer comprising a second semiconductor material.
摘要翻译：根据一些方面，提供了一种用于将电磁辐射转换成电力的装置，包括第一层，包括第一半导体材料，与第一层接触的吸收体，第二层包括第二半导体材料，第二层位于与吸收器接触，以及反射器以反射通过第二层的电磁辐射的至少一部分。根据一些方面，提供一种形成用于将电磁辐射转换成电力的装置的方法，包括在基板上形成反射器，形成与所述反射器接触的第一层，所述第一层包括第一半导体材料，形成第吸收体与第一层接触，以及形成与吸收体接触的第二层，第二层包括第二半导体材料。

8. 发明申请

US20150295101A1 METHODS FOR ENHANCING EXCITON DECOUPLING WITH A STATIC ELECTRIC FIELD AND DEVICES THEREOF 审中-公开
标题翻译：用静电电场增强电子装置的方法及其装置
公开(公告)号：US20150295101A1
公开(公告)日：2015-10-15
申请号：US14672633
申请日：2015-03-30
申请人： Nth Tech Corporation
发明人： Michael D. Potter
IPC分类号： H01L31/0216 , H01L31/028 , H01L31/18 , H01L31/0224
CPC分类号： H01L31/02167 , H01L31/06 , H01L31/061 , H01L31/062 , H01L31/07 , Y02E10/50
摘要： An apparatus configured for enhanced exciton decoupling, the apparatus includes an insulator on a surface of the substrate, a positive conductor and a negative conductor. The insulator has a fixed, static charge configured to increase an electric field in an exciton generating region in the substrate adjacent the insulator.
摘要翻译：一种被配置用于增强激子解耦的装置，该装置包括在该基板的表面上的绝缘体，一个正导体和一个负极导体。绝缘体具有固定的静电荷，其被配置为增加邻近绝缘体的衬底中的激子产生区域中的电场。

9. 发明申请

US20150255637A1 PHOTOVOLTAIC DEVICES INCORPORATING THIN CHALCOGENIDE FILM ELECTRICALLY INTERPOSED BETWEEN PNICTIDE-CONTAINING ABSORBER LAYER AND EMITTER LAYER 审中-公开
标题翻译：包含含PNICTIDE的吸收层和发射层之间的电化学膜的薄膜电容器的光伏器件
公开(公告)号：US20150255637A1
公开(公告)日：2015-09-10
申请号：US14433221
申请日：2013-10-07
申请人： DOW GLOBAL TECHNOLOGIES LLC , CALIFORNIA INSTITUTE OF TECHNOLOGY
发明人： Jeffrey P. Bosco , Rebekah K. Feist , Harry A. Atwater , Marty W. Degroot , James C. Stevens , Gregory M. Kimball
IPC分类号： H01L31/0296 , H01L31/032 , H01L31/18 , H01L31/072
CPC分类号： H01L31/0296 , H01L31/032 , H01L31/062 , H01L31/07 , H01L31/072 , H01L31/1085 , H01L31/109 , H01L31/1828 , Y02E10/50
摘要： The present invention provides strategies for improving the quality of the insulating layer in MIS and SIS devices in which the insulator layer interfaces with at least one pnictide-containing film The principles of the present invention are based at least in part on the discovery that very thin (20 nm or less) insulating films comprising a chalcogenide such as i-ZnS are surprisingly superior tunnel barriers in MIS and SIS devices incorporating pnictide semiconductors. In one aspect, the present invention relates to a photovoltaic device, comprising: a semiconductor region comprising at least one pnictide semiconductor; an insulating region electrically coupled to the semiconductor region, wherein the insulating region comprises at least one chalcogenide and has a thickness in the range from 0.5 nm to 20 nm; and a rectifying region electrically coupled to the semiconductor region in a manner such that the insulating region is electrically interposed between the collector region and the semiconductor region.
摘要翻译：本发明提供了改善MIS和SIS器件中的绝缘层的质量的策略，其中绝缘体层与至少一个含有pnictide的膜相接触。本发明的原理至少部分地基于以下发现：非常薄（20nm以下）包含硫族化物如i-ZnS的绝缘膜在MIS和SIS器件中具有令人惊奇的优越的隧道势垒，其包含pnictide半导体。一方面，本发明涉及一种光伏器件，包括：包含至少一个半导体的半导体区域; 绝缘区域，其电耦合到所述半导体区域，其中所述绝缘区域包括至少一个硫族化物，并且具有在0.5nm至20nm范围内的厚度; 以及整流区域，其以这样的方式电耦合到所述半导体区域，使得所述绝缘区域电插入在所述集电极区域和所述半导体区域之间。

10. 发明申请

US20140261650A1 SOLAR CELL 审中-公开
标题翻译：太阳能电池
公开(公告)号：US20140261650A1
公开(公告)日：2014-09-18
申请号：US14196129
申请日：2014-03-04
申请人： Samsung Electronics Co., Ltd.
发明人： Yun Gi KIM , Takkyun RO
IPC分类号： H01L31/0352
CPC分类号： H01L31/035218 , H01L31/03845 , H01L31/06 , H01L31/07 , Y02E10/50
摘要： A solar cell includes a first electrode, a second electrode spaced apart from the first electrode, and a light absorption layer between the first electrode and the second electrode. The light absorption layer includes a first absorption sublayer, a second absorption sublayer and a third absorption sublayer. The first absorption sublayer contacts the first electrode and includes a first quantum dot, the second absorption sublayer is between the first absorption sublayer and the third absorption sublayer and includes a second quantum dot, and the third absorption sublayer contacts the second electrode and includes a third quantum dot. The second quantum dot is larger than the first quantum dot and the third quantum dot.
摘要翻译：太阳能电池包括第一电极，与第一电极间隔开的第二电极，以及在第一电极和第二电极之间的光吸收层。光吸收层包括第一吸收子层，第二吸收子层和第三吸收子层。所述第一吸收子层与所述第一电极接触并且包括第一量子点，所述第二吸收子层位于所述第一吸收子层和所述第三吸收子层之间，并且包括第二量子点，所述第三吸收子层与所述第二电极接触，量子点第二量子点大于第一量子点和第三量子点。

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