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1. 发明授权

US4514747A Field controlled thyristor with double-diffused source region 失效
标题翻译：具有双扩散源极区域的场控晶闸管
公开(公告)号：US4514747A
公开(公告)日：1985-04-30
申请号：US357594
申请日：1982-03-12
申请人： Kenji Miyata , Yoshio Terasawa , Saburo Oikawa , Susumu Murakami , Masahiro Okamura
发明人： Kenji Miyata , Yoshio Terasawa , Saburo Oikawa , Susumu Murakami , Masahiro Okamura
IPC分类号： H01L29/08 , H01L29/10 , H01L29/744 , H01L29/74
CPC分类号： H01L29/744 , H01L29/0834 , H01L29/1066
摘要： Disclosed is a field controlled thyristor in which a first semiconductor region of N.sup.+ -type, a second semiconductor region of N-type, third semiconductor regions of P-type, a fourth semiconductor region of N.sup.- -type and a fifth semiconductor region of P.sup.+ -type are formed in a semiconductor substrate having two main surfaces, the first, second and third semiconductor regions being exposed in the first main surface and the fifth semiconductor region being exposed in the second main surface; and the third semiconductor regions of P-type are spaced from each other by a predetermined spacing. The third semiconductor regions are connected with surface-exposed semiconductor regions exposed in the first main surface. The impurity concentration in the second semiconductor region decreases from the first semiconductor region toward the third semiconductor region so that a low forward voltage drop can be achieved along with a high reverse blocking voltage. Also disclosed is a method for forming the third semiconductor regions and the surface-exposed semiconductor regions through a diffusion process alone.
摘要翻译：公开了一种场控晶闸管，其中N +型的第一半导体区域，N型的第二半导体区域，P型的第三半导体区域，N型的第四半导体区域和P + 型形成在具有两个主表面的半导体衬底中，第一，第二和第三半导体区域暴露在第一主表面中，第五半导体区域暴露在第二主表面中; 并且P型的第三半导体区域彼此隔开预定间隔。第三半导体区域与暴露在第一主表面中的暴露表面的半导体区域连接。第二半导体区域中的杂质浓度从第一半导体区域朝向第三半导体区域减小，从而可以实现高反向阻断电压的低正向压降。还公开了通过单独的扩散处理形成第三半导体区域和表面暴露的半导体区域的方法。

2. 发明授权

US4354121A Field controlled thyristor control circuit with additional FCT in reverse bias circuit 失效
标题翻译：具有反向偏置电路中附加FCT的场控晶闸管控制电路
公开(公告)号：US4354121A
公开(公告)日：1982-10-12
申请号：US284794
申请日：1981-07-10
申请人： Yoshio Terasawa , Kenji Miyata , Saburo Oikawa , Susumu Murakami , Masahiro Okamura , Takuzo Ogawa
发明人： Yoshio Terasawa , Kenji Miyata , Saburo Oikawa , Susumu Murakami , Masahiro Okamura , Takuzo Ogawa
IPC分类号： H01L27/08 , H01L29/739 , H02M1/08 , H03K17/04 , H03K17/12 , H03K17/72 , H03K17/73 , H03K17/60
CPC分类号： H01L29/7392 , H01L27/0817 , H02M1/08 , H03K17/0406 , H03K17/125 , H03K17/72
摘要： A switching control circuit includes a first field controlled thyristor having a gate and a cathode between which a backward bias voltage source and a second field controlled thyristor are connected in series. Conduction of the second field controlled thyristor is controlled by controlling a voltage applied across the gate and the cathode, thereby to control conduction of the first field controlled thyristor. A large load current can be positively and safely turned on and off by a relatively small control current or voltage.
摘要翻译：开关控制电路包括具有栅极和阴极的第一场控制晶闸管，在其间串联连接反向偏置电压源和第二场控制晶闸管。通过控制施加在栅极和阴极两端的电压来控制第二场控晶闸管的导通，从而控制第一场控制晶闸管的导通。通过相对较小的控制电流或电压可以正确安全地打开和关闭大负载电流。

3. 发明授权

US4223328A Field controlled thyristor with dual resistivity field layer 失效
标题翻译：具有双电阻率场层的场控晶闸管
公开(公告)号：US4223328A
公开(公告)日：1980-09-16
申请号：US911311
申请日：1978-06-01
申请人： Yoshio Terasawa , Kenji Miyata , Masayoshi Naito , Takuzo Ogawa , Masahiro Okamura
发明人： Yoshio Terasawa , Kenji Miyata , Masayoshi Naito , Takuzo Ogawa , Masahiro Okamura
IPC分类号： H01L29/80 , H01L29/08 , H01L29/10 , H01L29/167 , H01L29/74 , H01L29/744
CPC分类号： H01L29/744 , H01L29/0834 , H01L29/1066 , H01L29/167
摘要： A field controlled thyristor is disclosed which comprises a first emitter region exposed to one main surface of a semiconductor substrate and having a first conductivity type, a second emitter region exposed to the other main surface of the substrate and having a second conductivity type, a base region connecting the first and the second emitter region, and a gate region provided in the base region. The gate region consists of a slab-like first portion disposed parallel to both the emitter and a second portion connecting the first slab-like portion with one of the main surfaces of the semiconductor substrate. The impurity concentration of the base region is higher in the portion of the base region nearer to the emitter region having the same conductivity type as that of the base region than in the portion of the base region nearer to the emitter region having the opposite conductivity type to that of the base region. The field controlled thyristor has a high forward blocking voltage gain (anode-cathode voltage/gate bias voltage), a large current rating, and a high switching power capability and its switching time is very short.
摘要翻译：公开了一种场控晶闸管，其包括暴露于半导体衬底的一个主表面并具有第一导电类型的第一发射极区域，暴露于衬底的另一个主表面并具有第二导电类型的第二发射极区域，连接第一和第二发射极区域的区域，以及设置在基极区域中的栅极区域。栅极区域由平行于发射极的板状第一部分和将第一板状部分与半导体衬底的主表面中的一个连接的第二部分组成。基极区域的杂质浓度比基极区域具有与基极区域相同的导电类型的发射极区域的部分比在具有相反导电类型的发射极区域更靠近的部分的基极区域更高到基地区。场控晶闸管具有高正向阻断电压增益（阳极 - 阴极电压/栅极偏置电压），大额定电流和高开关功率能力，其开关时间非常短。

4. 发明授权

US4649990A Heat-conducting cooling module 失效
标题翻译：导热冷却模块
公开(公告)号：US4649990A
公开(公告)日：1987-03-17
申请号：US730642
申请日：1985-05-06
申请人： Yasutoshi Kurihara , Tasao Soga , Hiroaki Hachino , Kenji Miyata , Masahiro Okamura , Fumiyuki Kobayashi , Takahiro Daikoku
发明人： Yasutoshi Kurihara , Tasao Soga , Hiroaki Hachino , Kenji Miyata , Masahiro Okamura , Fumiyuki Kobayashi , Takahiro Daikoku
IPC分类号： H01L23/373 , H01L23/433 , F28F7/00
CPC分类号： H01L23/3731 , H01L23/4338 , H01L2224/16225
摘要： A heat-conducting cooling module for cooling a semiconductor substrate in an integrated circuit package assembly in which a semiconductor substrate is mounted on a base board by small solder pellets, and which contains a single substrate or laminated substrates. A heat-conducting relay member is provided between the semiconductor substrate and a housing so as to be pressed onto the semiconductor substrate. At least either one of the housing or the heat-conducting relay member is made of a sintered product which includes silicon carbide as a chief component.
摘要翻译：一种用于冷却集成电路封装组件中的半导体衬底的导热冷却模块，其中通过小的焊料颗粒将半导体衬底安装在基板上，并且其包含单个衬底或层压衬底。导热继电器件设置在半导体衬底和壳体之间，以便被压在半导体衬底上。壳体或导热继电器构件中的至少一个由包括碳化硅作为主要成分的烧结产品制成。

5. 发明授权

US4258377A Lateral field controlled thyristor 失效
标题翻译：横向场控晶闸管
公开(公告)号：US4258377A
公开(公告)日：1981-03-24
申请号：US19567
申请日：1979-03-12
申请人： Kenji Miyata , Tatsuya Kamei , Masahiro Okamura
发明人： Kenji Miyata , Tatsuya Kamei , Masahiro Okamura
IPC分类号： H01L29/10 , H01L29/74 , H01L29/744
CPC分类号： H01L29/102 , H01L29/7436 , H01L29/744
摘要： An improvement in a semiconductor switching device is disclosed which comprises a semiconductor substrate of a first conductivity type, an anode region of a second conductivity type formed in the semiconductor substrate adjacent to a major surface thereof, a gate region of the second conductivity type formed a distance from the anode region, and a cathode region of the first conductivity type formed in the gate region and having a higher impurity concentration than the semiconductor substrate. A channel region is formed immediately below the cathode region thereby to directly contact the cathode region to the semiconductor substrate. A current path extending from the anode region to the cathode region through the semiconductor substrate is interrupted by a depletion layer produced in the vicinity of the channel region upon application of a reverse bias across a pn-junction formed between the gate region and the cathode region. When no reverse bias voltage is applied, the anode region, the semiconductor substrate and the gate region cooperate to function as a thyristor. The semiconductor switching device has a high dv/dt capability and is easily implemented in integrated circuits.
摘要翻译：公开了一种半导体开关器件的改进，其包括第一导电类型的半导体衬底，形成在与其主表面相邻的半导体衬底中的第二导电类型的阳极区域，第二导电类型的栅极区形成为与阳极区域的距离以及形成在栅极区域中并且具有比半导体衬底更高的杂质浓度的第一导电类型的阴极区域。沟道区形成在阴极区的正下方，从而直接接触阴极区到半导体衬底。通过在栅极区域和阴极区域之间形成的pn结上施加反向偏压，在由沟道区域附近产生的耗尽层将中断通过半导体衬底从阳极区延伸到阴极区的电流路径。当不施加反向偏置电压时，阳极区域，半导体衬底和栅极区域配合作为晶闸管。半导体开关器件具有高的dv / dt能力，并且易于在集成电路中实现。

6. 发明授权

US08872127B2 Beam current controller for laser ion source 有权
标题翻译：光束电流控制器用于激光离子源
公开(公告)号：US08872127B2
公开(公告)日：2014-10-28
申请号：US13398553
申请日：2012-02-16
申请人： Masahiro Okamura
发明人： Masahiro Okamura
IPC分类号： H01J27/24 , H05H1/10 , A61N5/10 , H05H7/08
CPC分类号： H01J27/24 , A61N5/10 , A61N2005/1074 , A61N2005/1088 , H05H2007/082
摘要： The present invention relates to the design and use of an ion source with a rapid beam current controller for experimental and medicinal purposes. More particularly, the present invention relates to the design and use of a laser ion source with a magnetic field applied to confine a plasma flux caused by laser ablation.
摘要翻译：本发明涉及具有用于实验和药用目的的快速束流控制器的离子源的设计和使用。更具体地，本发明涉及具有施加磁场的激光离子源的设计和使用，以限制由激光烧蚀引起的等离子体通量。

7. 发明授权

US06310582B1 Antenna system 失效
标题翻译：天线系统
公开(公告)号：US06310582B1
公开(公告)日：2001-10-30
申请号：US09493658
申请日：2000-01-28
申请人： Tatsuya Uetake , Masahiro Okamura , Midori Taira , Akito Kobayashi , Ken Satou
发明人： Tatsuya Uetake , Masahiro Okamura , Midori Taira , Akito Kobayashi , Ken Satou
IPC分类号： H01A300
CPC分类号： H01Q21/28 , H01Q1/125 , H01Q3/08
摘要： When communication is performed simultaneously with two moving bodies such as a satellite, an antenna construction in which a plurality of antennas do not become an obstacle to each other's communication and the direction (the azimuth angle and the elevation angle) adjusting mechanism thereof can be realized with a simple construction. The two antennas have another movable portion (a rotation mechanism with respect to the axis) independently, while sharing the direction adjusting mechanism for the azimuth angle and the elevation angle. The rotation axis of the rotation mechanism of each antenna faces the same direction on the same plane, and each rotation mechanism is separately arranged in an area defined by a plane obtained by extending the axis of the azimuth angle adjusting mechanism toward the axial direction of the elevation angle adjusting mechanism. The azimuth angle and the elevation angle of respective antennas can be separately adjusted by the rotation mechanism with respect to the axis, hence the antennas can be directed to the communication targets existing in the two different directions simultaneously from the reception point.
摘要翻译：当与诸如卫星的两个移动体同时进行通信时，可以实现多个天线不会成为彼此通信的障碍物的天线结构以及其方向（方位角和仰角）调节机构施工简单。两个天线独立地具有另一个可移动部分（相对于轴线的旋转机构），同时共享用于方位角和仰角的方向调节机构。每个天线的旋转机构的旋转轴线在相同的平面上面向相同的方向，并且每个旋转机构分开布置在由通过使方位角调节机构的轴线朝向轴向方向延伸而获得的平面所限定的区域中仰角调整机构。可以通过旋转机构相对于轴分别调整各个天线的方位角和仰角，从而可以从接收点同时将天线指向存在于两个不同方向上的通信对象。

8. 发明授权

US4210464A Method of simultaneously controlling the lifetimes and leakage currents in semiconductor devices by hot electron irradiation through passivating glass layers 失效
标题翻译：通过钝化玻璃层通过热电子照射同时控制半导体器件寿命和漏电流的方法
公开(公告)号：US4210464A
公开(公告)日：1980-07-01
申请号：US873774
申请日：1978-01-31
申请人： Tomoyuki Tanaka , Masahiro Okamura , Toshikatsu Shirasawa , Takuzo Ogawa
发明人： Tomoyuki Tanaka , Masahiro Okamura , Toshikatsu Shirasawa , Takuzo Ogawa
IPC分类号： H01L29/73 , H01L21/26 , H01L21/263 , H01L21/322 , H01L21/331 , H01L21/56 , H01L23/31 , H01L29/74 , H01L29/861 , C03C3/04
CPC分类号： H01L24/01 , H01L21/26 , H01L21/263 , H01L21/56 , H01L23/3171 , H01L23/3178 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01023 , H01L2924/0103 , H01L2924/01033 , H01L2924/01074 , H01L2924/01079 , H01L2924/01082 , H01L2924/01322 , H01L2924/10253 , H01L2924/12036 , H01L2924/1301 , H01L2924/3025
摘要： The whole body of a semiconductor device with its pn junction exposed ends covered by insulating glass is subjected to the exposure to radiation having an energy of higher than 0.5 MeV in terms of the reduced energy of electron beams while the semiconductor device is maintained at temperatures higher than 300.degree. C., and preferably higher than 350.degree. C. As a result, the life time of the minority carriers in the semiconductor device can be shortened without increasing the leakage current in the reverse direction.
摘要翻译：以绝缘玻璃覆盖的其pn结露出端的半导体器件的整个体，由于电子束的能量减少而被照射到具有高于0.5MeV的能量的辐射，同时半导体器件保持在更高的温度超过300℃，优选高于350℃。结果，半导体器件中的少数载流子的寿命可以缩短，而不会增加相反方向的泄漏电流。

9. 发明申请

US20120211668A1 Beam Current Controller for Laser Ion Source 有权
标题翻译：光束电流控制器用于激光离子源
公开(公告)号：US20120211668A1
公开(公告)日：2012-08-23
申请号：US13398553
申请日：2012-02-16
申请人： Masahiro Okamura
发明人： Masahiro Okamura
IPC分类号： H01J27/24 , H01J3/26
CPC分类号： H01J27/24 , A61N5/10 , A61N2005/1074 , A61N2005/1088 , H05H2007/082
摘要： The present invention relates to the design and use of an ion source with a rapid beam current controller for experimental and medicinal purposes. More particularly, the present invention relates to the design and use of a laser ion source with a magnetic field applied to confine a plasma flux caused by laser ablation.
摘要翻译：本发明涉及具有用于实验和医疗目的的快速束流控制器的离子源的设计和使用。更具体地，本发明涉及具有施加磁场的激光离子源的设计和使用，以限制由激光烧蚀引起的等离子体通量。

10. 发明授权

US07043440B2 Play back apparatus 失效
标题翻译：播放设备
公开(公告)号：US07043440B2
公开(公告)日：2006-05-09
申请号：US09829988
申请日：2001-04-11
申请人： Takehiko Shioda , Masami Suzuki , Satoshi Odagawa , Takayuki Akimoto , Masahiro Okamura , Yasuteru Kodama , Manabu Nohara , Katsunori Arakawa , Osamu Yamazaki , Hiroto Inoue
发明人： Takehiko Shioda , Masami Suzuki , Satoshi Odagawa , Takayuki Akimoto , Masahiro Okamura , Yasuteru Kodama , Manabu Nohara , Katsunori Arakawa , Osamu Yamazaki , Hiroto Inoue
IPC分类号： G10L19/00
CPC分类号： G11B20/10527 , G11B20/00007 , G11B27/005 , G11B2020/1062 , G11B2220/61
摘要： When the quick traverse play back command (or, quick returning play back command) of the audio information by the compression audio information is given to the play back apparatus, by the control of the control section, the special audio according to the temporarily stored data stored in the first storage means is repeatedly played back, instead of the play back of the audio by the ordinary play back operation.
摘要翻译：当通过压缩音频信息将音频信息的快速往复播放命令（或快速返回播放命令）提供给播放设备时，通过控制部分的控制，根据临时存储的数据存储在第一存储装置中的是重复播放的，而不是通过普通的回放操作播放音频。

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