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1. 发明授权

US4223328A Field controlled thyristor with dual resistivity field layer 失效
标题翻译：具有双电阻率场层的场控晶闸管
公开(公告)号：US4223328A
公开(公告)日：1980-09-16
申请号：US911311
申请日：1978-06-01
申请人： Yoshio Terasawa , Kenji Miyata , Masayoshi Naito , Takuzo Ogawa , Masahiro Okamura
发明人： Yoshio Terasawa , Kenji Miyata , Masayoshi Naito , Takuzo Ogawa , Masahiro Okamura
IPC分类号： H01L29/80 , H01L29/08 , H01L29/10 , H01L29/167 , H01L29/74 , H01L29/744
CPC分类号： H01L29/744 , H01L29/0834 , H01L29/1066 , H01L29/167
摘要： A field controlled thyristor is disclosed which comprises a first emitter region exposed to one main surface of a semiconductor substrate and having a first conductivity type, a second emitter region exposed to the other main surface of the substrate and having a second conductivity type, a base region connecting the first and the second emitter region, and a gate region provided in the base region. The gate region consists of a slab-like first portion disposed parallel to both the emitter and a second portion connecting the first slab-like portion with one of the main surfaces of the semiconductor substrate. The impurity concentration of the base region is higher in the portion of the base region nearer to the emitter region having the same conductivity type as that of the base region than in the portion of the base region nearer to the emitter region having the opposite conductivity type to that of the base region. The field controlled thyristor has a high forward blocking voltage gain (anode-cathode voltage/gate bias voltage), a large current rating, and a high switching power capability and its switching time is very short.
摘要翻译：公开了一种场控晶闸管，其包括暴露于半导体衬底的一个主表面并具有第一导电类型的第一发射极区域，暴露于衬底的另一个主表面并具有第二导电类型的第二发射极区域，连接第一和第二发射极区域的区域，以及设置在基极区域中的栅极区域。栅极区域由平行于发射极的板状第一部分和将第一板状部分与半导体衬底的主表面中的一个连接的第二部分组成。基极区域的杂质浓度比基极区域具有与基极区域相同的导电类型的发射极区域的部分比在具有相反导电类型的发射极区域更靠近的部分的基极区域更高到基地区。场控晶闸管具有高正向阻断电压增益（阳极 - 阴极电压/栅极偏置电压），大额定电流和高开关功率能力，其开关时间非常短。

2. 发明授权

US4354121A Field controlled thyristor control circuit with additional FCT in reverse bias circuit 失效
标题翻译：具有反向偏置电路中附加FCT的场控晶闸管控制电路
公开(公告)号：US4354121A
公开(公告)日：1982-10-12
申请号：US284794
申请日：1981-07-10
申请人： Yoshio Terasawa , Kenji Miyata , Saburo Oikawa , Susumu Murakami , Masahiro Okamura , Takuzo Ogawa
发明人： Yoshio Terasawa , Kenji Miyata , Saburo Oikawa , Susumu Murakami , Masahiro Okamura , Takuzo Ogawa
IPC分类号： H01L27/08 , H01L29/739 , H02M1/08 , H03K17/04 , H03K17/12 , H03K17/72 , H03K17/73 , H03K17/60
CPC分类号： H01L29/7392 , H01L27/0817 , H02M1/08 , H03K17/0406 , H03K17/125 , H03K17/72
摘要： A switching control circuit includes a first field controlled thyristor having a gate and a cathode between which a backward bias voltage source and a second field controlled thyristor are connected in series. Conduction of the second field controlled thyristor is controlled by controlling a voltage applied across the gate and the cathode, thereby to control conduction of the first field controlled thyristor. A large load current can be positively and safely turned on and off by a relatively small control current or voltage.
摘要翻译：开关控制电路包括具有栅极和阴极的第一场控制晶闸管，在其间串联连接反向偏置电压源和第二场控制晶闸管。通过控制施加在栅极和阴极两端的电压来控制第二场控晶闸管的导通，从而控制第一场控制晶闸管的导通。通过相对较小的控制电流或电压可以正确安全地打开和关闭大负载电流。

3. 发明授权

US4219832A Thyristor having low on-state voltage with low areal doping emitter region 失效
标题翻译：具有低导通电压的晶闸管具有低面积掺杂发射极区域
公开(公告)号：US4219832A
公开(公告)日：1980-08-26
申请号：US716280
申请日：1976-08-20
申请人： Masayoshi Naito , Takahiro Nagano , Takuzo Ogawa
发明人： Masayoshi Naito , Takahiro Nagano , Takuzo Ogawa
IPC分类号： H01L29/74 , H01L21/225 , H01L21/285 , H01L21/331 , H01L29/06 , H01L29/08 , H01L29/73
CPC分类号： H01L29/0834 , H01L21/2257 , H01L21/28525 , H01L29/0839
摘要： A thyristor comprising a four-layer semiconductor substrate of PNPN structure in which the sum of the thicknesses in the layered direction of the intermediate P-type and N-type layers is less than 400.mu., and the amount of impurities per unit area of either one of the outer P-type and N-type layers is less than 3.times.10.sup.14 atoms/cm.sup.2.
摘要翻译：一种晶闸管，包括PNPN结构的四层半导体衬底，其中中间P型和N型层的层叠方向的厚度之和小于400μm，并且每单位面积的杂质量外部P型和N型层之一小于3×1014原子/ cm 2。

4. 发明授权

US4079405A Semiconductor photodetector 失效
标题翻译：半导体光电探测器
公开(公告)号：US4079405A
公开(公告)日：1978-03-14
申请号：US589675
申请日：1975-06-24
申请人： Hirobumi Ohuchi , Masahiro Okamura , Sumio Kawakami , Takuzo Ogawa
发明人： Hirobumi Ohuchi , Masahiro Okamura , Sumio Kawakami , Takuzo Ogawa
IPC分类号： H01L31/00 , H01L31/06 , H01L29/48
CPC分类号： H01L31/00 , H01L31/06 , Y02E10/50
摘要： A semiconductor photodetector comprising a first semiconductor layer having N-type conductivity; a second semiconductor layer having N-type conductivity, disposed in the vicinity of the first semiconductor layer and having a resistivity higher than that of the first semiconductor layer; a third region having P-type conductivity, disposed in the vicinity of the second semiconductor layer and having a thickness smaller than that of the second semiconductor layer; a first main electrode kept in ohmic contact with the first semiconductor layer; and a second main electrode kept in ohmic contact with a portion of the third region, the surface of the third region serving as a light receiving surface.
摘要翻译：一种半导体光电检测器，包括具有N型导电性的第一半导体层; 具有N型导电性的第二半导体层，设置在所述第一半导体层附近并具有比所述第一半导体层的电阻率高的电阻率; 具有P型导电性的第三区域，设置在所述第二半导体层附近，并且具有比所述第二半导体层的厚度小的厚度; 与第一半导体层保持欧姆接触的第一主电极; 以及与第三区域的一部分欧姆接触的第二主电极，第三区域的表面用作光接收表面。

5. 发明授权

US3943550A Light-activated semiconductor-controlled rectifier 失效
标题翻译：光敏半导体可控整流器
公开(公告)号：US3943550A
公开(公告)日：1976-03-09
申请号：US534373
申请日：1974-12-19
申请人： Nobutake Konishi , Tsutomu Yatsuo , Tatsuya Kamei , Masahiro Okamura , Takuzo Ogawa
发明人： Nobutake Konishi , Tsutomu Yatsuo , Tatsuya Kamei , Masahiro Okamura , Takuzo Ogawa
IPC分类号： H01L31/111 , H01L29/74
CPC分类号： H01L31/1113
摘要： A light-activated semiconductor-controlled rectifier device comprising four layers of PNPN is disclosed in which a part of the edges of the PN junction formed between the intermediate P-type layer and the intermediate N-type layer is exposed on the same side on which the outer P-type layer is exposed, so that a photo-trigger signal is radiated on that exposed part of the edges of the PN junction.
摘要翻译：公开了一种包括四层PNPN的光激活半导体控制整流器件，其中形成在中间P型层和中间N型层之间的PN结的边缘的一部分暴露在同一侧上，暴露外部P型层，使得在PN结的边缘的暴露部分上照射触发信号。

6. 发明授权

US4210464A Method of simultaneously controlling the lifetimes and leakage currents in semiconductor devices by hot electron irradiation through passivating glass layers 失效
标题翻译：通过钝化玻璃层通过热电子照射同时控制半导体器件寿命和漏电流的方法
公开(公告)号：US4210464A
公开(公告)日：1980-07-01
申请号：US873774
申请日：1978-01-31
申请人： Tomoyuki Tanaka , Masahiro Okamura , Toshikatsu Shirasawa , Takuzo Ogawa
发明人： Tomoyuki Tanaka , Masahiro Okamura , Toshikatsu Shirasawa , Takuzo Ogawa
IPC分类号： H01L29/73 , H01L21/26 , H01L21/263 , H01L21/322 , H01L21/331 , H01L21/56 , H01L23/31 , H01L29/74 , H01L29/861 , C03C3/04
CPC分类号： H01L24/01 , H01L21/26 , H01L21/263 , H01L21/56 , H01L23/3171 , H01L23/3178 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01023 , H01L2924/0103 , H01L2924/01033 , H01L2924/01074 , H01L2924/01079 , H01L2924/01082 , H01L2924/01322 , H01L2924/10253 , H01L2924/12036 , H01L2924/1301 , H01L2924/3025
摘要： The whole body of a semiconductor device with its pn junction exposed ends covered by insulating glass is subjected to the exposure to radiation having an energy of higher than 0.5 MeV in terms of the reduced energy of electron beams while the semiconductor device is maintained at temperatures higher than 300.degree. C., and preferably higher than 350.degree. C. As a result, the life time of the minority carriers in the semiconductor device can be shortened without increasing the leakage current in the reverse direction.
摘要翻译：以绝缘玻璃覆盖的其pn结露出端的半导体器件的整个体，由于电子束的能量减少而被照射到具有高于0.5MeV的能量的辐射，同时半导体器件保持在更高的温度超过300℃，优选高于350℃。结果，半导体器件中的少数载流子的寿命可以缩短，而不会增加相反方向的泄漏电流。

7. 发明授权

US4016593A Bidirectional photothyristor device 失效
标题翻译：双向光闸晶体管
公开(公告)号：US4016593A
公开(公告)日：1977-04-05
申请号：US583406
申请日：1975-06-03
申请人： Nobutake Konishi , Tsutomu Yatsuo , Tatsuya Kamei , Masahiro Okamura , Takuzo Ogawa
发明人： Nobutake Konishi , Tsutomu Yatsuo , Tatsuya Kamei , Masahiro Okamura , Takuzo Ogawa
IPC分类号： H01L29/74 , H01L29/747 , H01L31/0203 , H01L31/111
CPC分类号： H01L31/0203 , H01L31/1113
摘要： A bidirectional photothyristor device comprises a semiconductive substrate including an NPNPN quintuple layer in which projections of both the outer layers Ns in the stacking direction are not overlapped so as to define two quadruple layer regions each having either one of the outer layers Ns as an end layer, a pair of main electrodes connecting the two quadruple layer regions in parallel relationship, a recess formed between the two quadruple layer regions within the semiconductive substrate and to which two intermediate P-N junctions are exposed, and means for applying a light trigger signal to the recess.
摘要翻译：双向光闸晶体管装置包括一个包括NPNPN五元组的半导体衬底，其中层叠方向上的两个外层Ns的突起不重叠，以便限定两个四层层，每层具有外层Ns中的任一层作为端层一对主电极并联连接两个四重层区域，形成在半导体衬底内的两个四重层区域之间并且两个中间PN结露出的凹部和用于将光触发信号施加到凹部的装置。

8. 发明授权

US4040084A Semiconductor device having high blocking voltage with peripheral circular groove 失效
标题翻译：具有外围圆形沟槽的高阻塞电压的半导体器件
公开(公告)号：US4040084A
公开(公告)日：1977-08-02
申请号：US610786
申请日：1975-09-05
申请人： Tomoyuki Tanaka , Masahiro Okamura , Takuzo Ogawa , Yutaka Misawa
发明人： Tomoyuki Tanaka , Masahiro Okamura , Takuzo Ogawa , Yutaka Misawa
IPC分类号： H01L29/73 , H01L21/00 , H01L21/329 , H01L21/331 , H01L29/00 , H01L29/06 , H01L29/74 , H01L29/34 , H01L29/72
CPC分类号： H01L29/00 , H01L21/00 , H01L29/06
摘要： A semiconductor device having a high blocking voltage, comprises a pair of principal surfaces opposite to each other, a circular groove cut in the peripheral portion of one of the principal surfaces and a PN junction formed along the surface of the groove and the one of the principal surfaces, wherein the region on the side of the PN junction near the one of the principal surfaces is of high impurity concentration, the outer edge of the PN junction appears in the bevel surface connecting the pair of principal surfaces, and the edge of the PN junction intersects the bevel surface in such a manner that the angle therebetween in the region of high impurity concentration is obtuse.

9. 发明授权

US4146906A Low forward voltage drop semiconductor device having polycrystalline layers of different resistivity 失效
标题翻译：具有不同电阻率的多晶层的低向前电压下降半导体器件
公开(公告)号：US4146906A
公开(公告)日：1979-03-27
申请号：US762128
申请日：1977-01-24
申请人： Kenji Miyata , Mitsuru Ura , Takuzo Ogawa
发明人： Kenji Miyata , Mitsuru Ura , Takuzo Ogawa
IPC分类号： H01L29/73 , H01L21/225 , H01L21/331 , H01L29/04 , H01L29/74 , H01L29/861
CPC分类号： H01L29/861 , H01L21/2257 , H01L29/04 , H01L29/74 , Y10S148/122
摘要： A semiconductor device has one layer of a diode formed by diffusion of an impurity from a polycrystalline layer portion formed on a region in which the layer is to be formed. The polycrystalline layer portion is composed of two layers, the resistivity of the polycrystalline layer closer to the above-mentioned one layer of the diode being higher than that of the other polycrystalline layer.

10. 发明授权

US4164436A Process for preparation of semiconductor devices utilizing a two-step polycrystalline deposition technique to form a diffusion source 失效
标题翻译：使用两步多晶沉积技术制备半导体器件以形成扩散源的方法
公开(公告)号：US4164436A
公开(公告)日：1979-08-14
申请号：US925792
申请日：1978-07-18
申请人： Mitsuru Ura , Kenji Miyata , Takaya Suzuki , Takuzo Ogawa
发明人： Mitsuru Ura , Kenji Miyata , Takaya Suzuki , Takuzo Ogawa
IPC分类号： H01L21/22 , H01L21/205 , H01L21/225 , H01L29/04 , H01L29/08 , H01L29/866
CPC分类号： H01L29/866 , H01L21/02381 , H01L21/0245 , H01L21/02532 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L21/2257 , H01L29/04 , H01L29/0834 , Y10S148/122 , Y10S438/983
摘要： A semiconductor substrate having a single crystal semiconductor layer of one conductivity type exposed to the surface thereof is maintained at a temperature lower than the temperature at which the semiconductors is precipitated from the gas phase. In this state, a gas of a starting material of a semiconductor, a gas containing impurities capable of forming a semiconductor of the other conductivity type and a carrier gas therefore are fed onto the semiconductor substrate. Then, the semiconductor substrate is heated to form an amorphous or polycrystalline semiconductor layer of the other conductivity type on the semiconductor substrate. Simultaneously, the impurities of the other conductivity type are diffused from the amorphous or polycrystal semiconductor layer into the substrate which has a single crystal semiconductor layer of one conductivity type, to form a single crystal semiconductor layer having a p-n junction just below the amorphous or polycrystal semiconductor layer between the amorphous or polycrystalline semiconductor layer and the single crystal semiconductor layer of one conductivity type.In a p-n junction to be formed according to this process, the distribution of the concentration of impurities can be controlled precisely, and the step-like distribution of the concentration of impurities can be attained very well.
摘要翻译：具有暴露于其表面的一种导电类型的单晶半导体层的半导体衬底保持在比从气相中半导体析出的温度低的温度。在这种状态下，半导体衬底上的半导体原料气体，含能够形成其它导电类型的半导体的气体和载气的气体被馈送到半导体衬底上。然后，半导体衬底被加热以在半导体衬底上形成另一导电类型的非晶或多晶半导体层。同时，其他导电类型的杂质从非晶或多晶半导体层扩散到具有一种导电类型的单晶半导体层的衬底中，以形成具有刚好在无定形或多晶的下面的pn结的单晶半导体层非晶或多晶半导体层与一种导电类型的单晶半导体层之间的半导体层。

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