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1. 发明申请

US20170359061A1 SWITCH DEVICE, CONTROL METHOD OF THE SAME, AND CONTROL METHOD OF TRANSFER SWITCH SYSTEM USING THE SAME 审中-公开
公开(公告)号：US20170359061A1
公开(公告)日：2017-12-14
申请号：US15262188
申请日：2016-09-12
申请人： LITE-ON ELECTRONICS (GUANGZHOU) LIMITED , LITE-ON TECHNOLOGY CORP.
发明人： Wen-Che TSAI , Shih-Ming CHEN , Yong-Long LEE , Jin-Yuan LAI
IPC分类号： H03K17/687 , H03K17/567
CPC分类号： H03K17/6871 , H01H2071/124 , H02J9/061 , H03K17/122 , H03K17/125 , H03K17/567 , H03K17/693 , H03K17/73 , H03K2017/515 , H03K2217/0009
摘要： A switch device includes first and second switch units that are coupled respectively to first and second output terminals. Each of the first and second switch units includes a plurality of diodes and at least one semiconductor-controlled rectifier (SCR), where at least one of the diodes and one of the at least one SCR cooperatively permit a current to flow therethrough to a corresponding one of the first and second output terminals when each thereof operates in an ON state, and where at least one of the diodes and one of the at least one SCR cooperatively permit a current to flow therethrough from a corresponding one of the first and second output terminals when each thereof operates in an ON state.

2. 发明授权

US09287764B2 Energy delivery system and method for a gate drive unit controlling a thyristor-based valve 有权
标题翻译：用于控制基于晶闸管的阀门的栅极驱动单元的能量输送系统和方法
公开(公告)号：US09287764B2
公开(公告)日：2016-03-15
申请号：US13781685
申请日：2013-02-28
申请人： ALSTOM TECHNOLOGY LTD
发明人： Marek Furyk , Roman Raubo , John Schwartzenberg
IPC分类号： H02J7/18 , H02P9/18 , H02M1/088 , H03K17/12 , H01H9/54 , H01H33/59 , H01H47/00 , H02J3/18
CPC分类号： H02M1/088 , H02J3/1864 , H03K17/125
摘要： The invention concerns energy delivery system and method for a gate drive unit controlling a thyristor-based valve (19). The system comprises at least one current transformer (22) located in the main current path of the valve.
摘要翻译：本发明涉及用于控制基于晶闸管的阀门（19）的栅极驱动单元的能量输送系统和方法。该系统包括位于阀的主电流路径中的至少一个电流互感器（22）。

3. 发明申请

US20130093498A1 MATRIX-STAGES SOLID STATE ULTRAFAST SWITCH 有权
公开(公告)号：US20130093498A1
公开(公告)日：2013-04-18
申请号：US13273767
申请日：2011-10-14
申请人： Boris RESHETNYAK , Dante E. PICCONE , Victor TEMPLE
发明人： Boris RESHETNYAK , Dante E. PICCONE , Victor TEMPLE
IPC分类号： H03K17/687
CPC分类号： H03K3/57 , H03K17/0403 , H03K17/10 , H03K17/105 , H03K17/125 , H03K17/60 , H03K17/6871 , H03K17/74
摘要： A semiconductor switching device for switching high voltage and high current. The semiconductor switching device includes a control-triggered stage and one or more auto-triggered stages. The control-triggered stage includes a plurality of semiconductor switches, a breakover switch, a control switch, a turn-off circuit, and a capacitor. The control-triggered stage is connected in series to the one or more auto-triggered stages. Each auto-triggered stage includes a plurality of semiconductor switches connected in parallel, a breakover switch, and a capacitor. The control switch provides for selective turn-on of the control-triggered stage. When the control-triggered stage turns on, the capacitor of the control-triggered stage discharges into the gates of the plurality of semiconductor switches of the next highest stage to turn it on. Each auto-triggered stage turns on in a cascade fashion as the capacitor of the adjacent lower stage discharges or as the breakover switches of the auto-triggered stages turn on.

4. 发明授权

US07508158B2 Excitation system for synchronous machine 有权
标题翻译：同步电机励磁系统
公开(公告)号：US07508158B2
公开(公告)日：2009-03-24
申请号：US11647148
申请日：2006-12-29
申请人： Yoichi Kato , Satoshi Kitamura
发明人： Yoichi Kato , Satoshi Kitamura
IPC分类号： H02P1/46
CPC分类号： H03K17/725 , H02P25/024 , H02P27/16 , H03K17/125
摘要： A synchronous machine regulator is provided to simplify an adjustment work of current distribution to thyristors, the synchronous machine regulator having a circuit board 32 mounting a gate drive circuit 33 for supplying a gate pulse to each of thyristor bridges constituting a plurality of thyristor rectifiers 44 connected in parallel and supplying excitation current to a field winding 2 of a synchronous machine 1, and phase control means 34 for controlling a phase angle of each gate pulse to be supplied to each thyristor, wherein the current distribution to thyristors is controlled by the phase control means 34.
摘要翻译：提供同步电机调节器以简化对晶闸管的电流分配的调整工作，同步电机调节器具有安装栅极驱动电路33的电路板32，栅极驱动电路33用于向构成连接的多个晶闸管整流器44的晶闸管桥供应栅极脉冲并联并将励磁电流提供给同步电机1的励磁绕组2，以及相位控制装置34，用于控制要提供给每个晶闸管的每个栅极脉冲的相位角，其中通过相位控制来控制对晶闸管的电流分配意味着34。

5. 发明授权

US07115843B2 High-frequency pulse oscillator 失效
公开(公告)号：US07115843B2
公开(公告)日：2006-10-03
申请号：US11041221
申请日：2005-01-25
申请人： Stanislav K Kim , Eduard I Anisimov , Alexandre S. Drojjine , Vladimir A. Martynov , Won-Guk Jee
发明人： Stanislav K Kim , Eduard I Anisimov , Alexandre S. Drojjine , Vladimir A. Martynov , Won-Guk Jee
IPC分类号： H05B1/02
CPC分类号： H03K3/57 , B21B45/00 , B21B45/004 , H03K17/125 , H05B6/067
摘要： The present invention generally relates to a high-frequency pulse oscillator, and more particularly to a high-frequency pulse oscillator adapted to provide pulse currents having a high frequency and large amplitude so as to transition metallic materials into a plastic state for ease of processing or for closing microcracks formed in metallic parts in order to recover mechanical characteristics thereof. The high-frequency pulse oscillator of the present invention comprises a controllable rectifier, a switching section, and a control system. The controllable rectifier rectifies alternating currents supplied from a current source to output currents having a predetermined waveform, according to a control signal from the control system. The switching section generates pulse currents using the currents from the rectifier, according to another control signal from the control system. The switching section comprises at least one switching block, which is connected so that the amplitude of the pulse currents is increased. The control system controls the rectifier and the switching section according to the signals to start, stop, and reset the operation of generating the pulse currents and the signals to specify or change the frequency and amplitude of the pulse currents, so that the generated pulse currents may have desired frequency and amplitude. The pulse currents generated in the high-frequency pulse oscillator enable the manufacture of various structural parts without degrading their structure.

6. 发明授权

US4612561A Parallel-connected gate turn-off thyristors 失效
标题翻译：并联栅极截止晶闸管
公开(公告)号：US4612561A
公开(公告)日：1986-09-16
申请号：US508727
申请日：1983-06-27
申请人： Shin Kimura , Hiroshi Fukui , Shinji Yamada , Shuji Musha , Masayoshi Sato
发明人： Shin Kimura , Hiroshi Fukui , Shinji Yamada , Shuji Musha , Masayoshi Sato
IPC分类号： H01L25/11 , H01L25/10 , H01L25/18 , H02M1/06 , H02M1/08 , H03K17/12 , H03K17/72 , H03K17/73 , H01L29/74 , H03K17/60
CPC分类号： H02M1/08 , H03K17/125 , H03K17/72 , H01L2224/48091 , H01L2224/49113
摘要： A parallel connected gate turn-off thyristor device including an additional short circuiting conductor connected between the gate terminals of the respective gate turn-off thyristors so as to bypass a part of the turn-on and turn-off gate currents of one gate turn-off thyristor to other gate turn-off thyristors to increase the turn-on and turn-off gate currents of the other gate turn-off thyristors thereby hastening the turn-on and turn-off operations of the other gate turn-off thyristors.
摘要翻译：一种并联的栅极截止晶闸管器件，包括连接在各个栅极截止晶闸管的栅极端子之间的附加的短路导体，以便绕过一个栅极截止晶闸管的导通和截止栅极电流的一部分，关闭晶闸管到其他栅极截止晶闸管，以增加另一个栅极截止晶闸管的导通和关断栅极电流，从而加速其他栅极截止晶闸管的导通和关断操作。

7. 发明申请

US20180026570A1 SOLID STATE SWITCH SYSTEM 审中-公开
公开(公告)号：US20180026570A1
公开(公告)日：2018-01-25
申请号：US15217571
申请日：2016-07-22
申请人： ABB Schweiz AG
发明人： Pietro Cairoli , Lukas Hofstetter , Matthias Bator , Riccardo Bini , Munaf Rahimo
IPC分类号： H02P29/024 , H03K17/081 , H03K17/567
CPC分类号： H03K17/567 , H01L2224/0603 , H01L2224/48091 , H01L2224/48137 , H01L2224/49113 , H02H3/023 , H02H7/005 , H03K17/102 , H03K17/122 , H03K17/125 , H03K17/6872 , H03K2017/6875 , H03K2217/0036 , H01L2924/00014
摘要： A solid state switch has at least one FET-type device and at least one thyristor-type device coupled in parallel to the at least one FET-type device. The at least one FET-type device is constructed with a first power loss profile based on a rated current of an electrical device; and the at least one thyristor-type device is constructed with a second power loss profile based on a surge current associated with the electrical device.

8. 发明授权

US08575990B2 Matrix-stages solid state ultrafast switch 有权
公开(公告)号：US08575990B2
公开(公告)日：2013-11-05
申请号：US13273767
申请日：2011-10-14
申请人： Boris Reshetnyak , Dante E. Piccone , Victor Temple
发明人： Boris Reshetnyak , Dante E. Piccone , Victor Temple
IPC分类号： H03K17/74
CPC分类号： H03K3/57 , H03K17/0403 , H03K17/10 , H03K17/105 , H03K17/125 , H03K17/60 , H03K17/6871 , H03K17/74
摘要： A semiconductor switching device for switching high voltage and high current. The semiconductor switching device includes a control-triggered stage and one or more auto-triggered stages. The control-triggered stage includes a plurality of semiconductor switches, a breakover switch, a control switch, a turn-off circuit, and a capacitor. The control-triggered stage is connected in series to the one or more auto-triggered stages. Each auto-triggered stage includes a plurality of semiconductor switches connected in parallel, a breakover switch, and a capacitor. The control switch provides for selective turn-on of the control-triggered stage. When the control-triggered stage turns on, the capacitor of the control-triggered stage discharges into the gates of the plurality of semiconductor switches of the next highest stage to turn it on. Each auto-triggered stage turns on in a cascade fashion as the capacitor of the adjacent lower stage discharges or as the breakover switches of the auto-triggered stages turn on.

9. 发明授权

US06472686B1 Silicon carbide (SIC) gate turn-off (GTO) thyristor apparatus and method for high power control 失效
标题翻译：碳化硅（SIC）栅极截止（GTO）晶闸管器件及其大功率控制方法
公开(公告)号：US06472686B1
公开(公告)日：2002-10-29
申请号：US09677650
申请日：2000-10-03
申请人： Pankaj B. Shah
发明人： Pankaj B. Shah
IPC分类号： H01L310312
CPC分类号： H01L29/66363 , H01L29/1608 , H01L29/744 , H03K17/0403 , H03K17/125
摘要： A Silicon Carbide (SiC) Gate Turn-Off (GTO) thyristor is formed of a substrate having at least three epi-layers provided thereon as first, second and third doped regions, respectively, and the substrate being a fourth doped region, wherein the at least four doped regions alternate between a p-type doping and an n-type doping, with the regions being at least partially overlaid. An anode is arranged on the first region, and a base is arranged on the second region. A controlling gate is arranged on the third region, and a cathode is arranged on the fourth region. A current divider divides the load current between the anode and the base. This reduces the voltage drop of a portion of the load current passing through the thyristor, allowing for the switching of higher current densities than in prior art thyristors, faster switching speeds and reduced junction temperatures.
摘要翻译：碳化硅（SiC）栅极截止（GTO）晶闸管分别由其上设置有至少三个外延层的衬底形成，作为第一，第二和第三掺杂区，衬底是第四掺杂区，其中，至少四个掺杂区域在p型掺杂和n型掺杂之间交替，其中区域至少部分地覆盖。阳极设置在第一区域上，基底设置在第二区域上。控制栅极设置在第三区域上，阴极布置在第四区域上。电流分压器分隔阳极和基座之间的负载电流。这降低了通过晶闸管的负载电流的一部分的电压降，允许比现有技术的晶闸管更高的电流密度的切换，更快的开关速度和降低的结温。

10. 发明授权

US5952735A Method of and apparatus for optimizing the matching of pulse generators driving high "Q" tuned loads, by phase splitting 失效
标题翻译：通过相位分割优化驱动高“Q”调谐负载的脉冲发生器匹配的方法和装置
公开(公告)号：US5952735A
公开(公告)日：1999-09-14
申请号：US31020
申请日：1998-02-26
申请人： Paul R. Johannessen
发明人： Paul R. Johannessen
IPC分类号： H03K3/57 , H03K17/12 , H03K17/80 , H03K3/00
CPC分类号： H03K17/80 , H03K3/57 , H03K17/125
摘要： A technique for optimizing the impedance match between a plurality of pulse generators and a high-Q tuned load by equally advancing and retarding the phase of equal groups of pulse generator modules with respect to the load voltage. The sum output current is in phase with the coupling network voltage and produces alternating pulse generator sinewave outputs of successive plus and minus equal phase shifts with respect to the load voltage.
摘要翻译：一种用于通过相对于负载电压相等地推进和延迟相等组的脉冲发生器模块的相位来优化多个脉冲发生器与高Q调谐负载之间的阻抗匹配的技术。总和输出电流与耦合网络电压同相，并产生相对于负载电压的连续正负相移的交替脉冲发生器正弦波输出。

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