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1. 发明授权

US6113489A Ingot slicing method, an ingot manufacturing method and a sliced ingot grinding apparatus 失效
标题翻译：锭式切片方法，锭制造方法和切片锭磨机
公开(公告)号：US6113489A
公开(公告)日：2000-09-05
申请号：US281966
申请日：1999-03-31
申请人： Kenichiro Nishi , Tetsuo Okuyama , Mitsuru Nukui , Kazuo Nakajima , Shirou Murai , Toyotaka Wada , Tomio Nakagawa
发明人： Kenichiro Nishi , Tetsuo Okuyama , Mitsuru Nukui , Kazuo Nakajima , Shirou Murai , Toyotaka Wada , Tomio Nakagawa
IPC分类号： B24B27/06 , B24B7/17 , B24B7/22 , B24B37/00 , B28D5/00 , B28D5/02 , B28D5/04 , B24B2/19
CPC分类号： B28D5/0082 , B24B1/00 , B24B41/067 , B24B53/02 , B24B7/17 , B24B7/228
摘要： A method of slicing an ingot wherein a pre-cut work 3 in which a holding member 2 extending over the entire length of a side surface of a cylindrical ingot 1 is bonded to the side surface of the ingot 1 is set on a slicing apparatus 4, and the pre-cut work 3 is split into a multiplicity of pieces over its longitudinal direction so as to obtain disk-shaped works 5 to be ground, characterized in that a retaining member 2 is used in which a retaining layer 7 which is directly bonded to the side surface of the ingot 1 by a first adhesive agent having an adhesive strength sufficient to receive a rotating force due to a grinding apparatus 6 in a subsequent grinding process, an intermediate layer 8 which is bonded to said retaining layer 7 in a superposed manner by a second adhesive agent whose adhesive strength deteriorates more than that of the first adhesive agent under a fixed condition, and a supporting layer 11 which is connected to said intermediate layer 8 and is connected to a supporting portion 10 of said slicing apparatus 4 are integrally superposed one on top another.
摘要翻译：一种切割锭的方法，其中将切割工件3设置在切片装置4上，其中在圆锭1的侧表面的整个长度上延伸的保持构件2结合到锭1的侧表面并且预切割工件3在其纵向方向上被分成多个部件，以便获得待研磨的圆盘状工件5，其特征在于，使用保持部件2，其中保持层7直接通过具有足以在随后的研磨过程中由于研磨装置6接受旋转力的粘合强度的第一粘合剂粘合到锭块1的侧表面上的中间层8，其结合到所述保持层7中在固定状态下，粘接强度劣于第一粘接剂的粘接强度比第二粘接剂重叠的方式，连接在所述中间层8上的支撑层11与支撑体所述切片装置4的固定部分10一体地叠置在另一个上。

2. 发明授权

US06296553B1 Grinding method, surface grinder, workpiece support, mechanism and work rest 失效
标题翻译：研磨方法，平面磨床，工件支撑，机构和工作台
公开(公告)号：US06296553B1
公开(公告)日：2001-10-02
申请号：US09052019
申请日：1998-03-31
申请人： Kenichiro Nishi , Mitsuru Nukui , Shirou Murai , Kazuo Nakajima , Toyotaka Wada
发明人： Kenichiro Nishi , Mitsuru Nukui , Shirou Murai , Kazuo Nakajima , Toyotaka Wada
IPC分类号： B24B700
CPC分类号： B24B37/04 , B24B41/06 , B24B47/22
摘要： A workpiece receiving hole 60a for fittingly receiving a workpiece 17 is formed in the center of a rotary disk 60 which is thinner than the workpiece 17. A workpiece drive section 60b which engages a notch 17a formed for the purpose of orienting the workpiece 17 relative to crystal orientation is formed along the brim of the hole 60a. A gear 59 is rotated by a gear 62 of a motor 61, thereby rotating the rotary disk 60 and imparting torque to the workpiece 17. Accordingly, both surfaces of the workpiece are ground by means of a double disc surface grinder.
摘要翻译：在与工件17相比更薄的旋转盘60的中心形成有用于配合接收工件17的工件接收孔60a。工件驱动部分60b，其与形成为用于使工件17相对于沿着孔60a的边缘形成晶体取向。齿轮59由马达61的齿轮62旋转，从而旋转旋转盘60并赋予工件17扭矩。因此，通过双盘表面研磨机研磨工件的两个表面。

3. 发明授权

US06220931B1 Feeding a grinding wheel in grinding method 有权
标题翻译：在研磨方法中加入砂轮
公开(公告)号：US06220931B1
公开(公告)日：2001-04-24
申请号：US09299151
申请日：1999-04-26
申请人： Kenichiro Nishi , Mitsuru Nukui , Kazuo Nakajima , Shirou Murai , Toyotaka Wada
发明人： Kenichiro Nishi , Mitsuru Nukui , Kazuo Nakajima , Shirou Murai , Toyotaka Wada
IPC分类号： B24B100
CPC分类号： B24B7/228 , B24B41/04 , B24B49/16
摘要： A spindle 23 of a grinding wheel 28 is rotatively borne by a bench 22 for the grinding wheel through hydrostatic thrust bearings 26 and 27. A pressure regulator 38 for regulating the pressure which must be supplied to at least either of supply ports 26a and 27a opposite to each other in the direction of the axial line of the spindle 23 in the hydrostatic thrust bearings 26 and 27 is provided. The pressure regulator 38 has a changing member for changing a passage for choking the fluid and the length of the choking passage.
摘要翻译：砂轮28的主轴23通过静压推力轴承26和27由用于砂轮的台架22旋转地承受。压力调节器38，其用于调节必须供给至相对的供给口26a和27a中的至少一个的压力在静压推力轴承26,27中，在主轴23的轴线方向上相互配置。压力调节器38具有用于改变用于阻塞流体的通道和阻塞通道的长度的改变构件。

4. 发明授权

US6036585A Grinder and grinding method 失效
标题翻译：研磨机和研磨方法
公开(公告)号：US6036585A
公开(公告)日：2000-03-14
申请号：US48273
申请日：1998-03-26
申请人： Kenichiro Nishi , Mitsuru Nukui , Kazuo Nakajima , Shirou Murai , Toyotaka Wada
发明人： Kenichiro Nishi , Mitsuru Nukui , Kazuo Nakajima , Shirou Murai , Toyotaka Wada
IPC分类号： B24B7/22 , B24B41/04 , B24B49/16 , B24B7/17
CPC分类号： B24B7/228 , B24B41/04 , B24B49/16
摘要： A spindle 23 of a grinding wheel 28 is rotatively borne by a bench 22 for the grinding wheel through hydrostatic thrust bearings 26 and 27. A pressure regulator 38 for regulating the pressure which must be supplied to at least either of supply ports 26a and 27a opposite to each other in the direction of the axial line of the spindle 23 in the hydrostatic thrust bearings 26 and 27 is provided. The pressure regulator 38 has a changing member for changing a passage for choking the fluid and the length of the choking passage.
摘要翻译：砂轮28的主轴23通过静压推力轴承26和27由用于砂轮的台架22旋转地承受。压力调节器38，其用于调节必须供给至相对的供给口26a和27a中的至少一个的压力在静压推力轴承26,27中，在主轴23的轴线方向上相互配置。压力调节器38具有用于改变用于阻塞流体的通道和阻塞通道的长度的改变构件。

5. 发明授权

US08404043B2 Process for producing polycrystalline bulk semiconductor 有权
标题翻译：多晶体半导体生产工艺
公开(公告)号：US08404043B2
公开(公告)日：2013-03-26
申请号：US12130863
申请日：2008-05-30
申请人： Kozo Fujiwara , Kazuo Nakajima
发明人： Kozo Fujiwara , Kazuo Nakajima
IPC分类号： C30B11/00
CPC分类号： C30B29/06 , C30B11/003 , C30B29/08 , C30B29/52
摘要： A high-quality polycrystalline bulk semiconductor having a large crystal grain size is produced by the casting method in which growth is regulated so as to proceed in the same plane direction, i.e., the {110}; plane or {112} plane is disclosed. The process, which is for producing a polycrystalline bulk semiconductor, comprises: a step in which a melt of a semiconductor selected among Si, Ge, and SiGe is held in a crucible; a step in which a bottom part of the crucible is cooled to give a temperature gradient and that part of the melt which is located directly on the crucible bottom is rapidly cooled in the beginning of growth to supercool the melt around the crucible bottom; a step in which the crucible is cooled to grow nuclei on the crucible bottom due to the supercooled state of the melt around the crucible bottom and thereby grow dendritic crystals along the crucible bottom; and a step in which a polycrystalline bulk of the semiconductor is then grown on the upper side of the dendritic crystals.
摘要翻译：具有大晶粒尺寸的高质量多晶体半导体是通过在同一平面方向（即{110}）上进行调节而进行生长的铸造方法制造的。平面或{112}平面。用于制造多晶体半导体的方法包括：将从Si，Ge和SiGe中选择的半导体的熔体保持在坩埚中的步骤; 坩埚的底部被冷却以产生温度梯度并且直接位于坩埚底部上的部分熔体在生长开始时被快速冷却，以使熔化物在坩埚底部过冷; 由于坩埚底部的熔体的过冷状态，坩埚被冷却以在坩埚底部生长核的步骤，从而沿着坩埚底部生长树枝晶体; 并且在树枝状晶体的上侧生长半导体的多晶体的步骤。

6. 发明授权

US08017862B2 Solar-cell single-crystal silicon substrate, solar cell element, and method for producing the same 有权
标题翻译：太阳能电池单晶硅基板，太阳能电池元件及其制造方法
公开(公告)号：US08017862B2
公开(公告)日：2011-09-13
申请号：US11583872
申请日：2006-10-20
申请人： Michio Kida , Wugen Pan , Kyojiro Kaneko , Kazuo Nakajima , Noritaka Usami , Kozo Fujiwara
发明人： Michio Kida , Wugen Pan , Kyojiro Kaneko , Kazuo Nakajima , Noritaka Usami , Kozo Fujiwara
IPC分类号： H01L25/00 , H01L31/00 , H02N6/00
CPC分类号： H01L31/0312 , H01L31/077 , Y02E10/50
摘要： In growing a single-crystal silicon by the present invention in a Czochralski method, after a surface of a silicon melt is brought into contact with a seed crystal in a crucible, the silicon melt being added with germanium, the single-crystal silicon is pulled while rotated, and the solar-cell single-crystal silicon substrate is sliced from the single-crystal silicon containing germanium, whereby a germanium content of solar-cell single-crystal silicon substrate is set in the range of not less than 0.03 mole % to less than 1.0 mole % when resistivity ranges from 1.4 to 1.9 Ωcm. Therefore, conversion efficiency is enhanced when compared with conventional single-crystal silicon substrates. Accordingly, solar cell power generation costs decreases, so that the single-crystal silicon of the present invention can widely be utilized as the substrate for the solar cell in which the high conversion efficiency is increasingly demanded.
摘要翻译：在通过本发明的单晶硅以切克劳斯基法生长单晶硅之后，在将熔融硅表面与坩埚中的晶种接触之后，将硅熔体加入锗，将单晶硅拉出同时旋转，并且从含单晶硅的锗切片太阳能电池单晶硅基板，由此将太阳能电池单晶硅基板的锗含量设定在不小于0.03摩尔％的范围内，相对于当电阻率范围为1.4至1.9（OHgr·cm）时小于1.0摩尔％。因此，与传统的单晶硅衬底相比，转换效率提高。因此，太阳能电池发电成本降低，使得本发明的单晶硅可以广泛地用作其中越来越需要高转换效率的太阳能电池的基板。

7. 发明授权

US07117719B2 Hole shape measuring method and apparatus 有权
标题翻译：孔形状测量方法和装置
公开(公告)号：US07117719B2
公开(公告)日：2006-10-10
申请号：US10497665
申请日：2001-12-05
申请人： Susumu Sawafuji , Masahiro Tomoeda , Kazuo Nakajima
发明人： Susumu Sawafuji , Masahiro Tomoeda , Kazuo Nakajima
IPC分类号： G01B13/10 , G01B13/00
CPC分类号： G01B13/10 , G01B13/16
摘要： In a measuring apparatus 10, an arm 36 is lowered to insert a measuring sphere 30 into a hole 22A in a workpiece 22, and further the measuring sphere 30 is lowered in the depth direction of the hole 22A. Thereby, the back pressure of compressed air is detected at a plurality of locations by an A/E (air/electricity) converter 18. The detected value is compared with the master reference value by a controller 20 to convert the detected value into the inside diameter of the hole 22A. Thereby, the shape of various holes can be measured.
摘要翻译：在测量装置10中，臂36下降以将测量球30插入到工件22中的孔22A中，并且测量球30在孔22A的深度方向上下降。由此，背压的压缩空气通过A / E（空气/电力）转换器18在多个位置处被检测。通过控制器20将检测值与主基准值进行比较，以将检测值转换成孔22A的内径。由此，可以测量各种孔的形状。

8. 发明申请

US20050034756A1 Method for forming a Si film, Si film and solar battery 审中-公开
标题翻译：形成Si膜，Si膜和太阳能电池的方法
公开(公告)号：US20050034756A1
公开(公告)日：2005-02-17
申请号：US10860060
申请日：2004-06-04
申请人： Kazuo Nakajima , Noritaka Usami , Toru Ujihara , Kozo Fujiwara
发明人： Kazuo Nakajima , Noritaka Usami , Toru Ujihara , Kozo Fujiwara
IPC分类号： C30B19/00 , C30B19/10 , C30B19/12 , C30B29/06 , H01L21/208 , H01L31/04 , H01L31/18 , H01L31/00
CPC分类号： H01L31/1804 , C30B19/00 , C30B29/06 , H01L21/02381 , H01L21/02532 , H01L21/02573 , H01L21/02625 , Y02E10/547 , Y02P70/521
摘要： A Si melt is contacted to a main surface of a Si substrate made of metallurgical Si raw material to conduct liquid phase epitaxy within a temperature range around Si melting point and to form a Si crystal thin film on the main surface of the Si substrate.
摘要翻译： Si熔融物与由冶金Si原料制成的Si衬底的主表面接触，以在Si熔点附近的温度范围内进行液相外延生长，并在Si衬底的主表面上形成Si晶体薄膜。

9. 发明授权

US4065984A Internally accommodated speed change mechanism applicable to a bicycle 失效
标题翻译：适用于自行车的内置变速机构
公开(公告)号：US4065984A
公开(公告)日：1978-01-03
申请号：US569015
申请日：1975-04-17
申请人： Kazuo Nakajima
发明人： Kazuo Nakajima
IPC分类号： B62M11/16 , F16H3/44 , F16H5/12
CPC分类号： B62M11/16
摘要： A bicycle speed change mechanism in which five speeds are obtained with mechanism contained internally within the hub of a bicycle wheel. A pair of planetary gear mechanisms are mounted on a hub axle within a hub body, and two separate speed change rods are provided to selectively and separately control operation of the planetary gear mechanisms to obtain five numerically-different drive ratios. The separate speed change rods are manipulated at the control of the bicycle rider to select gear ratios ranging from the lowest to the highest available gear.
摘要翻译：一种自行车变速机构，其中获得具有内部在自行车车轮的轮毂内的机构的五个速度。一对行星齿轮机构安装在轮毂体内的轮毂轴上，并提供两个单独的变速杆，用于选择性地并且分别地控制行星齿轮机构的操作以获得五个数字不同的传动比。单独的变速杆在自行车骑行者的控制下被操纵以选择从最低到最高可用齿轮的传动比。

10. 发明授权

US4052914A Internally accommodated speed change mechanism applicable to a bicycle, etc. 失效
标题翻译：适用于自行车的内置变速机构等
公开(公告)号：US4052914A
公开(公告)日：1977-10-11
申请号：US566722
申请日：1975-04-10
申请人： Kazuo Nakajima
发明人： Kazuo Nakajima
IPC分类号： B62M11/16 , F16H3/44
CPC分类号： B62M11/16
摘要： The present invention relates to an internally accommodated three-stage speed change mechanism and an internally accommodated five-stage speed mechanism applicable to a bicycle, in which inside a hub body incorporating a portion of a speed change mechanism a first planetary gear mechanism is accommodated and a first speed changing rod is provided for controlling the first planetary gear mechanism, the ring gear of which is slidably moved by first the speed changing rod and the planetary gear of which remains axially fixed regardless of the first speed change rod.Further, a second planetary gear mechanism is assembled additionally to the aforesaid planetary gear mechanism and a second speed changing rod controlling the revolution and torque transmitting process of a sun gear of the second planetary gear mechanism is provided.
摘要翻译：本发明涉及一种适用于自行车的内部容纳的三级变速机构和内部容纳的五级转速机构，其中，包括容纳有第一行星齿轮机构的变速机构的一部分的轮毂体内，第一变速杆被设置用于控制第一行星齿轮机构，其环形齿轮首先被变速杆可滑动地移动，行星齿轮的行星齿轮保持轴向固定，而与第一变速杆无关。

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