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1. 发明公开

US20240229295A1 SINGLE-CRYSTAL DIAMOND AND METHOD OF MANUFACTURING THE SAME 审中-公开
公开(公告)号：US20240229295A1
公开(公告)日：2024-07-11
申请号：US18283790
申请日：2022-03-30
申请人： SUMITOMO ELECTRIC INDUSTRIES, LTD.
发明人： Yikang ZUO , Jin Hwa LEE , Yoshiki NISHIBAYASHI , Yutaka KOBAYASHI , Minori TERAMOTO , Hitoshi SUMIYA
IPC分类号： C30B29/04 , C30B19/00
CPC分类号： C30B29/04 , C30B19/00
摘要： A single-crystal diamond having an X-ray diffraction rocking curve with a half-width of 20 seconds or less, a peak at a Raman shift in the range of 1332 cm−1 to 1333 cm−1 in a Raman spectrum has a half-width of 2.0 cm−1 or less, the single-crystal diamond has an etch-pit density of 10,000/cm2 or less, the single-crystal diamond has a nitrogen content in the range of 0.0001 ppm to 0.1 ppm based on the number of atoms, and the single-crystal diamond has a 13C content of less than 0.01% based on the number of atoms.

2. 发明授权

US09945613B2 Heat exchangers in sapphire processing 有权
公开(公告)号：US09945613B2
公开(公告)日：2018-04-17
申请号：US13623645
申请日：2012-09-20
申请人： Apple Inc.
发明人： Christopher D. Prest , Dale N. Memering
IPC分类号： F27D17/00 , F27B19/00 , F27B19/04 , C30B11/00 , C30B15/34 , C30B19/00 , C30B19/08 , C30B29/20 , C30B33/02
CPC分类号： F27D17/004 , C30B11/00 , C30B11/003 , C30B15/34 , C30B19/00 , C30B19/08 , C30B29/20 , C30B33/02 , F27B19/00 , F27B19/04
摘要： Systems and methods are presented for efficient heating during production of corundum. One embodiment takes the form of a system for processing corundum including a first furnace and a second furnace. The first and second furnaces are sequentially arranged and heat from the first furnace is subsequently used to heat the second furnace.

3. 发明申请

US20170040168A1 Methods and Mask Structures for Substantially Defect-Free Epitaxial Growth 审中-公开
标题翻译：用于基本无缺陷外延生长的方法和掩模结构
公开(公告)号：US20170040168A1
公开(公告)日：2017-02-09
申请号：US15333995
申请日：2016-10-25
申请人： IMEC
发明人： Benjamin Vincent , Voon Yew Thean , Liesbeth Witters
IPC分类号： H01L21/02 , C30B25/04 , H01L29/78 , H01L21/762 , H01L29/66 , H01L29/06 , C30B23/04 , C30B19/12
CPC分类号： H01L21/02639 , C30B19/00 , C30B19/12 , C30B23/04 , C30B25/04 , H01L21/02381 , H01L21/02422 , H01L21/02532 , H01L21/02538 , H01L21/02647 , H01L21/02664 , H01L21/762 , H01L29/0653 , H01L29/66795 , H01L29/7851
摘要： Disclosed are methods and mask structures for epitaxially growing substantially defect-free semiconductor material. In some embodiments, mask structure includes a first level defining a first trench extending through the first level, wherein a bottom of the first trench is defined by a semiconductor substrate, and a second level on top of the first level, wherein the second level defines a plurality of second trenches positioned at a non-zero angle with respect to the first trench.
摘要翻译：公开了用于外延生长基本上无缺陷的半导体材料的方法和掩模结构。在一些实施例中，掩模结构包括限定延伸穿过第一层的第一沟槽的第一层，其中第一沟槽的底部由半导体衬底限定，第二层位于第一层的顶部，其中第二层限定多个相对于第一沟槽非零角度定位的第二沟槽。

4. 发明授权

US09476143B2 Methods using mask structures for substantially defect-free epitaxial growth 有权
标题翻译：使用掩模结构的方法用于基本上无缺陷的外延生长
公开(公告)号：US09476143B2
公开(公告)日：2016-10-25
申请号：US13768462
申请日：2013-02-15
申请人： IMEC
发明人： Benjamin Vincent , Voon Yew Thean , Liesbeth Witters
IPC分类号： C30B25/04 , C30B23/04 , H01L21/02 , H01L29/66 , C30B19/00
CPC分类号： H01L21/02639 , C30B19/00 , C30B19/12 , C30B23/04 , C30B25/04 , H01L21/02381 , H01L21/02422 , H01L21/02532 , H01L21/02538 , H01L21/02647 , H01L21/02664 , H01L21/762 , H01L29/0653 , H01L29/66795 , H01L29/7851
摘要： Disclosed are methods and mask structures for epitaxially growing substantially defect-free semiconductor material. In some embodiments, the method may comprise providing a substrate comprising a first crystalline material, where the first crystalline material has a first lattice constant; providing a mask structure on the substrate, where the mask structure comprises a first level comprising a first opening extending through the first level (where a bottom of the first opening comprises the substrate), and a second level on top of the first level, where the second level comprises a plurality of second trenches positioned at a non-zero angle with respect to the first opening. The method may further comprise epitaxially growing a second crystalline material on the bottom of the first opening, where the second crystalline material has a second lattice constant different than the first lattice constant and defects in the second crystalline material are trapped in the first opening.
摘要翻译：公开了用于外延生长基本上无缺陷的半导体材料的方法和掩模结构。在一些实施例中，该方法可以包括提供包括第一晶体材料的基底，其中第一晶体材料具有第一晶格常数; 在所述衬底上提供掩模结构，其中所述掩模结构包括第一层，所述第一层包括延伸穿过所述第一层的第一开口（其中所述第一开口的底部包括所述衬底），以及在所述第一层的顶部上的第二层，第二级包括相对于第一开口非零角度定位的多个第二沟槽。该方法还可以包括在第一开口的底部上外延生长第二晶体材料，其中第二晶体材料具有不同于第一晶格常数的第二晶格常数，并且第二晶体材料中的缺陷被捕获在第一开口中。

5. 发明授权

US09425073B2 Depression filling method and processing apparatus 有权
标题翻译：抑郁填充方法及处理装置
公开(公告)号：US09425073B2
公开(公告)日：2016-08-23
申请号：US14464736
申请日：2014-08-21
申请人： TOKYO ELECTRON LIMITED
发明人： Satoshi Onodera , Daisuke Suzuki , Akinobu Kakimoto
IPC分类号： H01L21/67 , H01L21/02 , C23C16/24 , C30B29/06 , C23C16/455 , C23C16/56 , C30B19/00
CPC分类号： H01L21/67069 , C23C16/045 , C23C16/24 , C23C16/45589 , C23C16/56 , C30B19/00 , C30B29/06 , H01L21/0243 , H01L21/02532 , H01L21/02576 , H01L21/02579 , H01L21/02592 , H01L21/0262 , H01L21/02658
摘要： A depression filling method for filling a depression of a workpiece including a semiconductor substrate and an insulating film formed on the semiconductor substrate is provided. The depression penetrating the insulating film is configured so as to extend to the semiconductor substrate. The method includes: forming a thin film of a semiconductor material along a wall surface that defines the depression; annealing the workpiece to cause the semiconductor material of the thin film to move toward a bottom of the depression and to form an epitaxial region corresponding to crystals of the semiconductor substrate; and etching the thin film.
摘要翻译：提供了一种用于填充包括形成在半导体衬底上的半导体衬底和绝缘膜的工件的凹陷的凹陷填充方法。穿透绝缘膜的凹陷构造成延伸到半导体衬底。该方法包括：沿着限定凹陷的壁面形成半导体材料薄膜; 对工件进行退火，使薄膜的半导体材料向凹部的底部移动，形成对应于半导体基板的晶体的外延区域; 并蚀刻该薄膜。

6. 发明授权

US09382641B2 Epitaxial substrate for semiconductor device, semiconductor device, and method of manufacturing epitaxial substrate for semiconductor device 有权
标题翻译：用于半导体器件的外延衬底，半导体器件和用于半导体器件的外延衬底的制造方法
公开(公告)号：US09382641B2
公开(公告)日：2016-07-05
申请号：US12767041
申请日：2010-04-26
申请人： Mikiya Ichimura , Makoto Miyoshi , Mitsuhiro Tanaka
发明人： Mikiya Ichimura , Makoto Miyoshi , Mitsuhiro Tanaka
IPC分类号： H01L29/20 , C30B25/02 , C30B19/00 , C30B23/02 , C30B29/40 , H01L21/02 , H01L29/778
CPC分类号： C30B25/02 , C30B19/00 , C30B23/02 , C30B29/403 , C30B29/406 , H01L21/0237 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L29/2003 , H01L29/7786
摘要： An epitaxial substrate having preferable two dimensional electron gas characteristic and contact characteristic is provided in the present invention. A channel layer is formed on a base substrate with GaN. A spacer layer is formed on the channel layer with AlN. A barrier layer is formed on the spacer layer with group III nitride having a composition of InXAlyGazN (wherein x+y+z=1) and at least including In, Al, and Ga such that the composition of the barrier layer is within the range surrounded with four lines defined in accordance with the composition on a ternary phase diagram with InN, AlN, and GaN as vertexes.
摘要翻译：在本发明中提供了具有优选的二维电子气特性和接触特性的外延基板。在GaN衬底上形成沟道层。在AlN的沟道层上形成间隔层。在间隔层上形成阻挡层，其中III族氮化物具有InXAlyGazN（其中x + y + z = 1）的组成，并且至少包括In，Al和Ga，使得阻挡层的组成在用根据三元相图上的组成定义的四条线以InN，AlN和GaN为顶点包围。

7. 发明申请

US20160060788A1 METHOD OF FORMING METAL FILM 有权
标题翻译：形成金属膜的方法
公开(公告)号：US20160060788A1
公开(公告)日：2016-03-03
申请号：US14838126
申请日：2015-08-27
申请人： FLOSFIA INC.
发明人： Masaya Oda , Toshimi Hitora
IPC分类号： C30B19/00 , H01L21/288 , H01L29/45 , C03C17/10 , C30B29/02
CPC分类号： C30B19/00 , C03C17/10 , C03C2217/253 , C03C2218/112 , C23C16/18 , C23C16/4486 , C30B29/02 , H01L21/288 , H01L29/45
摘要： Provided is a metal film forming method which can form a metal film having excellent adhesion industrially advantageously and a metal film formed by using the method. A method of forming a metal film on a base includes an atomization step of atomizing a raw-material solution into a mist, in which the raw-material is prepared by dissolving or dispersing a metal in an organic solvent containing an oxidant, a chelating agent, or a protonic acid; a carrier-gas supply step of supplying a carrier gas to the mist; a mist supply step of supplying the mist onto the base using the carrier gas; and a metal-film formation step of forming the metal film on part or all of a surface of the base to causing the mist to thermally react.
摘要翻译：提供一种能够在工业上有利地形成具有优异的粘附性的金属膜和通过使用该方法形成的金属膜的金属膜形成方法。在基材上形成金属膜的方法包括将原料溶液雾化成雾的雾化步骤，其中原料通过将金属溶解或分散在含有氧化剂的有机溶剂中制备，螯合剂，或质子酸; 将载气供给到所述雾中的载气供给工序; 使用所述载气将所述雾供给到所述基底上的雾供给工序; 以及金属膜形成步骤，在基底的一部分或全部表面上形成金属膜，使雾发生反应。

8. 发明申请

US20150233015A1 METHOD OF GROWTH OF LEAD ZIRCONATE TITANATE SINGLE CRYSTALS 有权
标题翻译：铅锌酸铅单晶生长方法
公开(公告)号：US20150233015A1
公开(公告)日：2015-08-20
申请号：US14420896
申请日：2013-12-02
申请人： Quest Integrated, Inc.
发明人： Vincent Fratello
IPC分类号： C30B19/12 , H01L41/18 , C30B29/32 , C30B19/02 , C30B19/04
CPC分类号： C30B19/12 , C30B19/00 , C30B19/02 , C30B19/04 , C30B29/32 , H01L41/18 , H01L41/317 , H01L41/41
摘要： Growth of single crystals of lead zirconate titanate (PZT) and other perovskites is accomplished by liquid phase epitaxy onto a substrate of suitable structural and lattice parameter match. A solvent and specific growth conditions for stable growth are required to achieve the desired proportions of Zr and Ti.
摘要翻译：锆钛酸铅（PZT）和其他钙钛矿的单晶的生长通过液相外延在合适的结构和晶格参数匹配的衬底上实现。需要溶剂和用于稳定生长的特定生长条件来实现所需比例的Zr和Ti。

9. 发明申请

US20130269596A1 FEED MATERIAL FOR EPITAXIAL GROWTH OF MONOCRYSTALLINE SILICON CARBIDE, AND METHOD FOR EPITAXIAL GROWTH OF MONOCRYSTALLINE SILICON CARBIDE 有权
标题翻译：用于单晶碳化硅的外延生长的材料以及单晶碳化硅的外延生长方法
公开(公告)号：US20130269596A1
公开(公告)日：2013-10-17
申请号：US13995722
申请日：2011-06-29
申请人： Satoshi Torimi , Satoru Nogami , Tsuyoshi Matsumoto
发明人： Satoshi Torimi , Satoru Nogami , Tsuyoshi Matsumoto
IPC分类号： C30B19/12 , C30B29/36
CPC分类号： C30B19/12 , C30B19/00 , C30B28/12 , C30B29/36 , Y10T428/26
摘要： Provided is a feed material for epitaxial growth of a monocrystalline silicon carbide capable of increasing the rate of epitaxial growth of silicon carbide. A feed material 11 for epitaxial growth of a monocrystalline silicon carbide includes a surface layer containing a polycrystalline silicon carbide with a 3C crystal polymorph. Upon X-ray diffraction of the surface layer, a diffraction peak corresponding to a (111) crystal plane and a diffraction peak other than the diffraction peak corresponding to the (111) crystal plane are observed as diffraction peaks corresponding to the polycrystalline silicon carbide with a 3C crystal polymorph.
摘要翻译：本发明提供一种能够提高碳化硅外延生长速率的单晶碳化硅的外延生长用原料。用于单晶碳化硅的外延生长的原料11包括含有具有3C晶体多晶型物的多晶碳化硅的表面层。在表面层的X射线衍射中，观察对应于（111）晶面的衍射峰和除了（111）晶面对应的衍射峰以外的衍射峰，作为与多晶碳化硅对应的衍射峰，一个3C晶体多晶型。

10. 发明申请

US20130118400A1 METHOD OF FORMING EPITAXIAL ZINC OXIDE FILMS 审中-公开
标题翻译：形成外源氧化锌膜的方法
公开(公告)号：US20130118400A1
公开(公告)日：2013-05-16
申请号：US13701154
申请日：2011-06-03
申请人： Kia Liang Gregory Goh
发明人： Kia Liang Gregory Goh
IPC分类号： C30B19/00 , H01L33/00 , C30B19/12
CPC分类号： C30B19/00 , B82Y30/00 , B82Y40/00 , C30B7/00 , C30B19/12 , C30B29/16 , C30B29/60 , H01L33/00 , H01L33/007 , H01L33/0079
摘要： The present invention is directed to a method of forming an epitaxial zinc oxide film on a substrate. The method includes forming an array of nanorods at least substantially perpendicular to the substrate in an aqueous solution; and growing the array of nanorods in an at least substantially lateral direction in the aqueous solution such that adjacent nanorods coalesce to form the epitaxial film. The present invention also relates to the films thus obtained and devices containing said films.
摘要翻译：本发明涉及一种在衬底上形成外延氧化锌膜的方法。该方法包括在水溶液中至少基本上垂直于衬底形成纳米棒阵列; 以及在水溶液中以至少基本上横向方向生长纳米棒阵列，使得相邻的纳米棒聚结形成外延膜。本发明还涉及由此获得的膜和包含所述膜的装置。

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