会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 3. 发明授权
    • Speed changing transmission apparatus
    • 变速传动装置
    • US08172714B2
    • 2012-05-08
    • US12281719
    • 2007-09-25
    • Shoso IshimoriYoshiyuki KatayamaYoshihiro UedaShinichi MoritaShinichi KawabataShigeki HayashiMasaaki NishinakaTakayasu KobayashiGo Takagi
    • Shoso IshimoriYoshiyuki KatayamaYoshihiro UedaShinichi MoritaShinichi KawabataShigeki HayashiMasaaki NishinakaTakayasu KobayashiGo Takagi
    • F16H3/72F16H37/06F16H47/04F16H3/44B60K17/06
    • F16H47/04F16H2037/088F16H2037/0886F16H2200/201
    • A composite planetary transmission section (P) is provided for synthesizing output from a stepless speed changing section (20) with an engine drive force. In a transmission line from the planetary transmission section (P) to an output rotational body (90), there are provided first clutch mechanism (60), a second clutch mechanism (70), a speed-reducing planetary transmission mechanism (80), an operable coupling clutch mechanism (110) and an output clutch mechanism (120). A ring gear (83) of the speed-reducing planetary transmission mechanism (80) includes a brake mechanism (100). A sun gear (43) of the planetary transmission section (P), an input side rotational member (62) of the first clutch mechanism (60), an input side rotational member (71) of the second clutch mechanism (70), a sun gear (84) of the speed-reducing planetary transmission mechanism (80), and an input side rotational member (122) of the output clutch mechanism (120) are rotatable about a common rotational axis. A rotational shaft (97) operably coupling a carrier (44) of the composite planetary transmission section (P) with the output rotational body (90) is inserted through a planetary transmission mechanism (50) of the composite planetary transmission section (P), the first clutch mechanism (60), the second clutch mechanism (70) and the speed-reducing planetary transmission mechanism (80).
    • 复合行星传动部分(P)用于合成来自无级变速部分(20)的输出与发动机驱动力。 在从行星传动部(P)到输出旋转体(90)的传输线中,设置有第一离合器机构(60),第二离合器机构(70),减速行星传动机构(80) 可操作的联接离合器机构(110)和输出离合器机构(120)。 减速行星传动机构(80)的齿圈(83)包括制动机构(100)。 行星传动部(P)的太阳齿轮(43),第一离合器机构(60)的输入侧旋转部件(62),第二离合器机构(70)的输入侧旋转部件(71) 减速行星传动机构80的太阳齿轮(84)和输出离合器机构(120)的输入侧旋转部件(122)能够绕公共旋转轴线旋转。 通过复合行星传动部(P)的行星传动机构(50)插入将复合行星传动部(P)的托架(44)与输出转动体(90)可操作地连接的旋转轴(97) 第一离合器机构(60),第二离合器机构(70)和减速行星传动机构(80)。
    • 4. 发明申请
    • Speed Changing Transmission Apparatus
    • 变速传动装置
    • US20090156345A1
    • 2009-06-18
    • US12281719
    • 2007-09-25
    • Shoso IshimoriYoshiyuki KatayamaYoshihiro UedaShinichi MoritaShinichi KawabataShigeki HayashiMasaaki NishinakaTakayasu KobayashiGo Takagi
    • Shoso IshimoriYoshiyuki KatayamaYoshihiro UedaShinichi MoritaShinichi KawabataShigeki HayashiMasaaki NishinakaTakayasu KobayashiGo Takagi
    • F16H37/00B60K17/06
    • F16H47/04F16H2037/088F16H2037/0886F16H2200/201
    • A composite planetary transmission section (P) is provided for synthesizing output from a stepless speed changing section (20) with an engine drive force. In a transmission line from the planetary transmission section (P) to an output rotational body (90), there are provided first clutch mechanism (60), a second clutch mechanism (70), a speed-reducing planetary transmission mechanism (80), an operable coupling clutch mechanism (110) and an output clutch mechanism (120). A ring gear (83) of the speed-reducing planetary transmission mechanism (80) includes a brake mechanism (100). A sun gear (43) of the planetary transmission section (P), an input side rotational member (62) of the first clutch mechanism (60), an input side rotational member (71) of the second clutch mechanism (70), a sun gear (84) of the speed-reducing planetary transmission mechanism (80), and an input side rotational member (122) of the output clutch mechanism (120) are rotatable about a common rotational axis. A rotational shaft (97) operably coupling a carrier (44) of the composite planetary transmission section (P) with the output rotational body (90) is inserted through a planetary transmission mechanism (50) of the composite planetary transmission section (P), the first clutch mechanism (60), the second clutch mechanism (70) and the speed-reducing planetary transmission mechanism (80).
    • 复合行星传动部分(P)用于合成来自无级变速部分(20)的输出与发动机驱动力。 在从行星传动部(P)到输出旋转体(90)的传输线中,设置有第一离合器机构(60),第二离合器机构(70),减速行星传动机构(80) 可操作的联接离合器机构(110)和输出离合器机构(120)。 减速行星传动机构(80)的齿圈(83)包括制动机构(100)。 行星传动部(P)的太阳齿轮(43),第一离合器机构(60)的输入侧旋转部件(62),第二离合器机构(70)的输入侧旋转部件(71) 减速行星传动机构80的太阳齿轮(84)和输出离合器机构(120)的输入侧旋转部件(122)能够绕公共旋转轴线旋转。 通过复合行星传动部(P)的行星传动机构(50)插入将复合行星传动部(P)的托架(44)与输出转动体(90)可操作地连接的旋转轴(97) 第一离合器机构(60),第二离合器机构(70)和减速行星传动机构(80)。
    • 5. 发明授权
    • Semiconductor memory
    • 半导体存储器
    • US08705270B2
    • 2014-04-22
    • US13415662
    • 2012-03-08
    • Masahiro TakahashiYoshihiro Ueda
    • Masahiro TakahashiYoshihiro Ueda
    • G11C11/00G11C11/16
    • G11C11/16G11C11/1659G11C11/1675
    • A semiconductor memory has a first switch circuit and a second switch circuit. The semiconductor memory has a row decoder that controls a voltage of a word line. The semiconductor memory has a first writing circuit including a first signal terminal connected to one end of the first switch circuit to input and output a writing current. The semiconductor memory has a second writing circuit including a second signal terminal connected to a one end of the second switch circuit to input and output the writing current. The semiconductor memory has a select transistor including a control terminal connected to the word line. The semiconductor memory has a resistance change element that is connected in series with the select transistor between the first bit line and the second bit line and varies in resistance value depending on an applied current.
    • 半导体存储器具有第一开关电路和第二开关电路。 半导体存储器具有控制字线电压的行解码器。 半导体存储器具有第一写入电路,该第一写入电路包括连接到第一开关电路的一端的第一信号端子,以输入和输出写入电流。 半导体存储器具有第二写入电路,该第二写入电路包括连接到第二开关电路的一端的第二信号端子,以输入和输出写入电流。 半导体存储器具有包括连接到字线的控制端的选择晶体管。 半导体存储器具有与第一位线和第二位线之间的选择晶体管串联连接的电阻变化元件,并根据所施加的电流而变化电阻值。
    • 6. 发明授权
    • Semiconductor memory
    • 半导体存储器
    • US08630136B2
    • 2014-01-14
    • US13422110
    • 2012-03-16
    • Yoshihiro UedaKosuke Hatsuda
    • Yoshihiro UedaKosuke Hatsuda
    • G11C7/00
    • G11C11/1673
    • A semiconductor memory includes a first memory cell including: a first resistance change element and a first select transistor. The semiconductor memory includes a second memory cell including: a second select transistor and a second resistance change element. The semiconductor memory includes a third memory cell including: a third select transistor and a third resistance change element, the third memory cell acting as a reference cell. The semiconductor memory includes a fourth memory cell including: a fourth resistance change element and a fourth select transistor, the fourth memory cell acting as a reference cell.
    • 半导体存储器包括:第一存储单元,包括:第一电阻变化元件和第一选择晶体管。 半导体存储器包括第二存储单元,其包括:第二选择晶体管和第二电阻变化元件。 半导体存储器包括第三存储单元,第三存储单元包括:第三选择晶体管和第三电阻变化元件,第三存储单元用作参考单元。 半导体存储器包括:第四存储单元,包括:第四电阻变化元件和第四选择晶体管,第四存储单元用作参考单元。
    • 7. 发明授权
    • Semiconductor storage device
    • 半导体存储设备
    • US08498144B2
    • 2013-07-30
    • US13191678
    • 2011-07-27
    • Masahiro TakahashiKatsuyuki FujitaYoshihiro UedaKatsuhiko Hoya
    • Masahiro TakahashiKatsuyuki FujitaYoshihiro UedaKatsuhiko Hoya
    • G11C11/00G11C11/15
    • G11C8/10G11C8/08G11C11/1675G11C11/1693
    • A semiconductor storage device includes first to fourth switch circuit. The semiconductor storage device includes a row decoder which controls a voltage of a word line. The semiconductor storage device includes a first selection transistor of which a control terminal is connected to the word line. The semiconductor storage device includes a first resistance change element which is connected in series to the first selection transistor between the first bit line and the second bit line, and of which a resistance value changes according to a flowing current. The semiconductor storage device includes a second selection transistor of which a control terminal is connected to the word line. The semiconductor storage device includes a second resistance change element which is connected in series to the second selection transistor between the second bit line and the third bit line, and of which a resistance value changes according to a flowing current.
    • 半导体存储装置包括第一至第四开关电路。 半导体存储装置包括用于控制字线电压的行译码器。 半导体存储装置包括控制端子连接到字线的第一选择晶体管。 半导体存储装置包括与第一位线和第二位线之间的第一选择晶体管串联连接的第一电阻变化元件,其电阻值根据流动电流而变化。 半导体存储装置包括控制端子连接到字线的第二选择晶体管。 半导体存储装置包括与第二位线和第三位线之间的第二选择晶体管串联连接的第二电阻变化元件,其电阻值根据流动电流而变化。
    • 9. 发明申请
    • SEMICONDUCTOR STORAGE DEVICE
    • 半导体存储设备
    • US20120063215A1
    • 2012-03-15
    • US13191678
    • 2011-07-27
    • Masahiro TAKAHASHIKatsuyuki FujitaYoshihiro UedaKatsuhiko Hoya
    • Masahiro TAKAHASHIKatsuyuki FujitaYoshihiro UedaKatsuhiko Hoya
    • G11C11/00
    • G11C8/10G11C8/08G11C11/1675G11C11/1693
    • A semiconductor storage device includes first to fourth switch circuit. The semiconductor storage device includes a row decoder which controls a voltage of a word line. The semiconductor storage device includes a first selection transistor of which a control terminal is connected to the word line. The semiconductor storage device includes a first resistance change element which is connected in series to the first selection transistor between the first bit line and the second bit line, and of which a resistance value changes according to a flowing current. The semiconductor storage device includes a second selection transistor of which a control terminal is connected to the word line. The semiconductor storage device includes a second resistance change element which is connected in series to the second selection transistor between the second bit line and the third bit line, and of which a resistance value changes according to a flowing current.
    • 半导体存储装置包括第一至第四开关电路。 半导体存储装置包括用于控制字线电压的行译码器。 半导体存储装置包括控制端子连接到字线的第一选择晶体管。 半导体存储装置包括与第一位线和第二位线之间的第一选择晶体管串联连接的第一电阻变化元件,其电阻值根据流动电流而变化。 半导体存储装置包括控制端子连接到字线的第二选择晶体管。 半导体存储装置包括与第二位线和第三位线之间的第二选择晶体管串联连接的第二电阻变化元件,其电阻值根据流动电流而变化。