会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 3. 发明授权
    • Concave grating spectrometer
    • 凹面光栅光谱仪
    • US4568187A
    • 1986-02-04
    • US504437
    • 1983-06-15
    • Toshiaki KitaTatsuo Harada
    • Toshiaki KitaTatsuo Harada
    • G01J3/18G01J3/20
    • G01J3/18
    • In a concave grating spectrometer for creating a spectral image by dispersing a light to be measured according to the wavelength, an arrangement comprising a concave grating with varied spacing and/or curved grooves formed on a concave spherical surface, and an entrance slit located at such a position on a vertical focal line passing through the center of curvature of the spherical surface, that the sum of the square of the difference between horizontal and vertical focal lengths at each wavelength in the wavelength range takes a minimum value. The light to be measured projected through the entrance slit is dispersed by the concave grating according to the wavelength and an image is focused on the vertical focal line passing through the center of curvature of the spherical grating.
    • 在凹面光栅光谱仪中,用于通过根据波长分散待测量的光来产生光谱图像,包括形成在凹球面上的具有不同间隔和/或弯曲凹槽的凹形光栅的布置,以及位于其上的入口狭缝 在通过球面的曲率中心的垂直焦线上的位置,在波长范围内的每个波长处的水平和垂直焦距之间的差的平方和之和为最小值。 通过入口狭缝投射的被测光通过凹面光栅根据波长分散,并且图像聚焦在穿过球形光栅的曲率中心的垂直焦线上。
    • 10. 发明授权
    • Semiconductor device having junction-termination structure of resurf type
    • 具有resurf型连接终端结构的半导体器件
    • US06765239B2
    • 2004-07-20
    • US10187369
    • 2002-07-02
    • Michiaki HiyoshiShigeru HasegawaNaoyuki InoueTatsuo Harada
    • Michiaki HiyoshiShigeru HasegawaNaoyuki InoueTatsuo Harada
    • H01L2974
    • H01L29/405H01L29/7395
    • A semiconductor device includes an active region with a main semiconductor device section, and a junction-termination region therearound. A first diffusion layer of a second conductivity type is formed in a surface of a first semiconductor layer of a first conductivity type, and extends from the active region into the junction-termination region. A second diffusion layer of the second conductivity type is formed in contact with the first diffusion layer, and extends in the junction-termination region. A first contact electrode is disposed in the active region and in contact with the first diffusion layer, and electrically connected to a first main electrode of the main semiconductor device section. A second contact electrode is disposed in the junction-termination region and in contact with the first diffusion layer, and surrounds the active region. A connection electrode electrically connects the first and second contact electrodes to each other.
    • 半导体器件包括具有主半导体器件部分的有源区和其周围的结终端区。 在第一导电类型的第一半导体层的表面中形成第二导电类型的第一扩散层,并且从有源区延伸到结终端区域。 形成与第一扩散层接触的第二导电类型的第二扩散层,并且在接合端子区域中延伸。 第一接触电极设置在有源区中并与第一扩散层接触,并且电连接到主半导体器件部分的第一主电极。 第二接触电极设置在接合端子区域中并且与第一扩散层接触并且围绕有源区域。 连接电极将第一和第二接触电极彼此电连接。