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    • 2. 发明授权
    • Resist processing apparatus
    • 抗蚀剂加工设备
    • US6033475A
    • 2000-03-07
    • US579845
    • 1995-12-26
    • Keizo HasebeHiroyuki IinoNorio SembaYoshio Kimura
    • Keizo HasebeHiroyuki IinoNorio SembaYoshio Kimura
    • B01D19/00G03F7/16
    • B01D19/0031G03F7/162
    • The present invention has a resist processing apparatus for supplying a processing solution onto an object to be processed to perform a resist process, including a processing solution supply nozzle for supplying the processing solution onto the object to be processed, a processing solution feeding arrangement for feeding the processing solution to the processing solution supply nozzle, a processing solution flow path arranged to extend between the processing solution feeding arrangement and the processing solution supply nozzle, and a processing solution deaeration mechanism arranged at an intermediate portion of the processing solution flow path to deaerate the processing solution. The processing solution deaeration mechanism includes a closed vessel, an inlet port for introducing the processing solution into the closed vessel, a member arranged in the closed vessel and having a gas-liquid separation function, and an evacuating arrangement for evacuating the interior of the closed vessel to deaerate the processing solution through the member having the gas-liquid separation function. Gaseous components are separated from the processing solution, and an outlet port feeds the processing solution, from which gaseous components are separated by the member having the gas-liquid separation function, to the processing solution supply nozzle.
    • 本发明的抗蚀剂处理装置具有将处理液供给到被处理物上进行抗蚀剂处理的工序,该处理液包括:处理液供给喷嘴,用于将处理液供给到被处理物上;处理液供给装置, 处理溶液供应喷嘴的处理溶液,布置成在处理溶液供给装置和处理溶液供应喷嘴之间延伸的处理溶液流路,以及布置在处理溶液流动路径的中间部分处理溶液脱气机构以脱气 处理方案。 处理液脱气机构包括:封闭容器,用于将处理液引入密闭容器的入口端口,配置在密闭容器中的具有气液分离功能的构件,以及用于抽出封闭容器内部的抽空装置 容器通过具有气液分离功能的构件使加工溶液脱气。 气态组分与处理溶液分离,并且出口将进料气体组分由具有气液分离功能的构件分离的处理溶液供给到处理溶液供应喷嘴。
    • 6. 发明授权
    • Coating and developing apparatus
    • 涂装显影装置
    • US07793609B2
    • 2010-09-14
    • US11342616
    • 2006-01-31
    • Masami AkimotoShinichi HayashiYasushi HayashidaNobuaki MatsuokaYoshio KimuraIssei UedaHikaru Ito
    • Masami AkimotoShinichi HayashiYasushi HayashidaNobuaki MatsuokaYoshio KimuraIssei UedaHikaru Ito
    • B05C5/02
    • H01L21/67184H01L21/67173H01L21/67178H01L21/67207H01L21/67745
    • Provided is a coating and developing apparatus composed of an assembly of plural unit blocks. A first unit-block stack and a second unit-block stack are arranged at different positions with respect to front-and-rear direction. Unit blocks for development, each of which comprises plural processing units including a developing unit that performs developing process after exposure and a transfer device that transfers a substrate among the processing units, are arranged at the lowermost level. Unit blocks for application, or coating, each of which comprises plural processing units including a coating unit that performs application process before exposure and a transfer device that transfers a substrate among the processing units, are arranged above the unit blocks for development. Unit blocks for application are arranged in both the first and second unit-block stacks. Unit blocks for application which a wafer goes through are determined depending on the layering positional relationship between an antireflective film and a resist film. An exposed wafer goes only through the unit block for development without going through any one of the unit blocks for application.
    • 提供一种由多个单元块组成的涂层显影装置。 第一单位块堆叠和第二单位块堆叠被布置在相对于前后方向的不同位置。 用于显影的单元块,每个包括多个处理单元,包括执行曝光之后的显影处理的显影单元和在处理单元之间传送基板的转印装置布置在最下层。 用于应用或涂布的单元块包括多个处理单元,其包括在曝光之前进行施加处理的涂布单元和在处理单元之间传送基板的转印装置,布置在用于显影的单位块上方。 用于应用的单元块被布置在第一和第二单元块堆叠中。 根据防反射膜和抗蚀剂膜之间的层叠位置关系确定晶片通过的应用单元块。 暴露的晶片仅通过单元块进行开发,而不经过用于应用的单元块中的任何一个。