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    • 2. 发明授权
    • Film forming method and film forming apparatus
    • 成膜方法和成膜装置
    • US06503003B2
    • 2003-01-07
    • US09816233
    • 2001-03-26
    • Keizo HasebeShuuichi NishikidoNobuo KonishiTakayuki ToshimaKazutoshi Yoshioka
    • Keizo HasebeShuuichi NishikidoNobuo KonishiTakayuki ToshimaKazutoshi Yoshioka
    • G03D504
    • G03F7/162B05C11/08
    • A solvent of a resist solution is dropped from a solvent supply nozzle onto the surface of a semiconductor wafer held by a spin chuck. The semiconductor wafer is rotated by the spin chuck to spread the resist solution over the entire surface of the semiconductor wafer W. Simultaneously, the resist solution is dropped from a resist solution supply nozzle onto the semiconductor wafer and spread following the solvent. During the processing, the processing space is isolated from the outer atmosphere by closing a lid of a processing vessel and a sprayed solvent is supplied into the processing space. The processing space is thus filled with the mist of solvent. In the processing space supplied with the solvent, evaporation of the solvent from the resist solution is suppressed. A film of the resist solution is formed with a uniform film thickness to the edge of the semiconductor wafer W.
    • 将抗蚀剂溶液的溶剂从溶剂供应喷嘴滴落到由旋转卡盘保持的半导体晶片的表面上。 半导体晶片通过旋转卡盘旋转,以将抗蚀剂溶液扩散到半导体晶片W的整个表面上。同时,将抗蚀剂溶液从抗蚀剂溶液供应喷嘴滴落到半导体晶片上并在溶剂之后扩散。 在处理过程中,通过关闭处理容器的盖子将处理空间与外部空气隔离,将喷射的溶剂供入处理空间。 因此,处理空间被溶剂雾填满。 在提供有溶剂的处理空间中,可以抑制溶剂从抗蚀剂溶液中的蒸发。 在半导体晶片W的边缘上形成具有均匀膜厚的抗蚀剂溶液膜。
    • 3. 发明授权
    • Resist processing apparatus
    • 抗蚀剂加工设备
    • US6033475A
    • 2000-03-07
    • US579845
    • 1995-12-26
    • Keizo HasebeHiroyuki IinoNorio SembaYoshio Kimura
    • Keizo HasebeHiroyuki IinoNorio SembaYoshio Kimura
    • B01D19/00G03F7/16
    • B01D19/0031G03F7/162
    • The present invention has a resist processing apparatus for supplying a processing solution onto an object to be processed to perform a resist process, including a processing solution supply nozzle for supplying the processing solution onto the object to be processed, a processing solution feeding arrangement for feeding the processing solution to the processing solution supply nozzle, a processing solution flow path arranged to extend between the processing solution feeding arrangement and the processing solution supply nozzle, and a processing solution deaeration mechanism arranged at an intermediate portion of the processing solution flow path to deaerate the processing solution. The processing solution deaeration mechanism includes a closed vessel, an inlet port for introducing the processing solution into the closed vessel, a member arranged in the closed vessel and having a gas-liquid separation function, and an evacuating arrangement for evacuating the interior of the closed vessel to deaerate the processing solution through the member having the gas-liquid separation function. Gaseous components are separated from the processing solution, and an outlet port feeds the processing solution, from which gaseous components are separated by the member having the gas-liquid separation function, to the processing solution supply nozzle.
    • 本发明的抗蚀剂处理装置具有将处理液供给到被处理物上进行抗蚀剂处理的工序,该处理液包括:处理液供给喷嘴,用于将处理液供给到被处理物上;处理液供给装置, 处理溶液供应喷嘴的处理溶液,布置成在处理溶液供给装置和处理溶液供应喷嘴之间延伸的处理溶液流路,以及布置在处理溶液流动路径的中间部分处理溶液脱气机构以脱气 处理方案。 处理液脱气机构包括:封闭容器,用于将处理液引入密闭容器的入口端口,配置在密闭容器中的具有气液分离功能的构件,以及用于抽出封闭容器内部的抽空装置 容器通过具有气液分离功能的构件使加工溶液脱气。 气态组分与处理溶液分离,并且出口将进料气体组分由具有气液分离功能的构件分离的处理溶液供给到处理溶液供应喷嘴。
    • 5. 发明授权
    • Liquid coating system
    • 液体涂层系统
    • US5374312A
    • 1994-12-20
    • US144492
    • 1993-11-01
    • Keizo HasebeKiyohisa TateyamaYuji YoshimotoYuji MatsuyamaTetsuro NakaharaYoshio Kimura
    • Keizo HasebeKiyohisa TateyamaYuji YoshimotoYuji MatsuyamaTetsuro NakaharaYoshio Kimura
    • B05C5/00B05C5/02B05C11/08G03F7/16H01L21/20
    • B05C5/001B05C11/08B05C5/0208B05C5/027G03F7/162Y10S134/902
    • A liquid coating system according to the present invention comprises, a liquid supply source, a nozzle having an inlet communicating with the liquid supply source and a substantially linear liquid discharge portion, a pressure feed unit for feeding the liquid under pressure from the liquid supply source to the nozzle by means of compressed gas, a spin chuck for fixedly supporting a semiconductor wafer, an up-and-down cylinder for causing the liquid discharge portion of the nozzle to closely face the wafer on the spin chuck, and a rotating mechanism for rotating the spin chuck. The nozzle includes a liquid reservoir, in which the liquid supplied from the liquid supply source is collected, and a large number of small passages communicating with the liquid reservoir. The liquid coating system further comprises an air operation valve disposed in a communication passage between the inlet of the nozzle and the liquid supply source and used to reduce the pressure of the liquid fed under pressure to the liquid reservoir.
    • 根据本发明的液体涂覆系统包括:液体供应源,具有与液体供应源连通的入口和基本上线性的液体排出部分的喷嘴;压力供给单元,用于在液体供应源 通过压缩气体到喷嘴,用于固定地支撑半导体晶片的旋转卡盘,用于使喷嘴的液体排出部分紧密地面对旋转卡盘上的晶片的上下缸体,以及用于 旋转旋转卡盘。 喷嘴包括从液体供应源供应的液体被收集的液体储存器和与液体储存器连通的大量小通道。 液体涂布系统还包括设置在喷嘴入口和液体供应源之间的连通通道中的空气操作阀,用于将在压力下供给的液体的压力降低到液体储存器。
    • 9. 发明授权
    • Film forming method and film forming apparatus
    • 成膜方法和成膜装置
    • US06228561B1
    • 2001-05-08
    • US08791618
    • 1997-01-31
    • Keizo HasebeShuuichi NishikidoNobuo KonishiTakayuki ToshimaKazutoshi Yoshioka
    • Keizo HasebeShuuichi NishikidoNobuo KonishiTakayuki ToshimaKazutoshi Yoshioka
    • G03F716
    • G03F7/162B05C11/08
    • A solvent of a resist solution is dropped from a solvent supply nozzle onto the surface of a semiconductor wafer held by a spin chuck. The semiconductor wafer is rotated by the spin chuck to spread the resist solution over the entire surface of the semiconductor wafer W. Simultaneously, the resist solution is dropped from a resist solution supply nozzle onto the semiconductor wafer and spread following the solvent. During the processing, the processing space is isolated from the outer atmosphere by closing a lid of a processing vessel and a sprayed solvent is supplied into the processing space. The processing space is thus filled with the mist of solvent. In the processing space supplied with the solvent, evaporation of the solvent from the resist solution is suppressed. A film of the resist solution is formed with a uniform film thickness to the edge of the semiconductor wafer W.
    • 将抗蚀剂溶液的溶剂从溶剂供应喷嘴滴落到由旋转卡盘保持的半导体晶片的表面上。 半导体晶片通过旋转卡盘旋转,以将抗蚀剂溶液扩散到半导体晶片W的整个表面上。同时,将抗蚀剂溶液从抗蚀剂溶液供应喷嘴滴落到半导体晶片上并在溶剂之后扩散。 在处理过程中,通过关闭处理容器的盖子将处理空间与外部空气隔离,将喷射的溶剂供入处理空间。 因此,处理空间被溶剂雾填满。 在提供有溶剂的处理空间中,可以抑制溶剂从抗蚀剂溶液中的蒸发。 在半导体晶片W的边缘上形成具有均匀膜厚的抗蚀剂溶液膜。