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1. 发明授权

US5284525A Solar cell 失效
标题翻译：太阳能电池
公开(公告)号：US5284525A
公开(公告)日：1994-02-08
申请号：US806347
申请日：1991-12-13
申请人： Keishi Saito , Tatsuyuki Aoike , Yasushi Fujioka , Mitsuyuki Niwa , Toshimitsu Kariya , Yuzo Kohda
发明人： Keishi Saito , Tatsuyuki Aoike , Yasushi Fujioka , Mitsuyuki Niwa , Toshimitsu Kariya , Yuzo Kohda
IPC分类号： H01L31/0236 , H01L31/0392 , H01L31/075
CPC分类号： H01L31/03921 , H01L31/0236 , H01L31/075 , Y02E10/548
摘要： A solar cell comprising a conductive substrate and semiconductor layers laminated on the conductive substrate, said laminate comprising a p-type layer composed of a non-single crystal Si material, an i-type layer serving as an active layer and an n-type layer, wherein a diamond layer having an uneven surface and containing a valence electron controlling agent is interposed between the conductive substrate and the semiconductor layers.
摘要翻译：一种太阳能电池，包括导电基板和层叠在导电基板上的半导体层，所述层压体包括由非单晶Si材料构成的p型层，用作有源层的i型层和n型层其中具有不平坦表面并含有价电子控制剂的金刚石层插入在导电基板和半导体层之间。

2. 发明授权

US5371380A Si- and/or Ge-containing non-single crystalline semiconductor film with an average radius of 3.5 A or less as for microvoids contained therein and a microvoid density 1.times.10.sup.(19) (cm.sup.-3) or less 失效
标题翻译：平均半径为3.5A或更小的含Si和/或Ge的非单晶半导体膜，对于其中所含的微孔，微孔密度为1×10（19）（cm-3）或更小
公开(公告)号：US5371380A
公开(公告)日：1994-12-06
申请号：US188731
申请日：1994-01-31
申请人： Keishi Saito , Tatsuyuki Aoike , Mitsuyuki Niwa , Toshimitsu Kariya , Yuzo Koda
发明人： Keishi Saito , Tatsuyuki Aoike , Mitsuyuki Niwa , Toshimitsu Kariya , Yuzo Koda
IPC分类号： H01L21/205 , H01L29/16 , H01L29/26 , H01L45/00
CPC分类号： H01L29/1604 , H01L21/02422 , H01L21/02425 , H01L21/02488 , H01L21/02532 , H01L21/0262 , H01L29/263
摘要： A non-single crystalline semiconductor containing at least one kind of atoms selected from the group consisting of silicon atoms (Si) and germanium atoms (Ge) as a matrix, and at least one kind of atoms selected from the group consisting of hydrogen atoms (H) and halogen atoms (X), wherein said non-single crystalline semiconductor has an average radius of 3.5 .ANG. or less and a density of 1.times.10.sup.19 (cm.sup.-3) or less as for microvoids contained therein. The non-single crystalline semiconductor excels in semiconductor characteristics and adhesion with other materials and are effectively usable as a constituent element of various semiconductor devices.
摘要翻译：含有选自硅原子（Si）和锗原子（Ge）作为基体的至少一种原子的非单晶半导体，以及选自氢原子中的至少一种原子（ H）和卤素原子（X），其中所述非单晶半导体的平均半径为3.5AANG或更小，密度为1×1019（cm-3）或更小，对于其中包含的微孔。非单晶半导体具有优异的半导体特性和与其他材料的粘合性，并且可以有效地用作各种半导体器件的组成元件。

3. 发明授权

US5281541A Method for repairing an electrically short-circuited semiconductor device, and process for producing a semiconductor device utilizing said method 失效
标题翻译：用于修复电短路的半导体器件的方法，以及利用所述方法制造半导体器件的工艺
公开(公告)号：US5281541A
公开(公告)日：1994-01-25
申请号：US755439
申请日：1991-09-05
申请人： Keishi Saito , Tatsuyuki Aoike , Mitsuyuki Niwa , Toshimitsu Kariya , Yuzo Koda
发明人： Keishi Saito , Tatsuyuki Aoike , Mitsuyuki Niwa , Toshimitsu Kariya , Yuzo Koda
IPC分类号： H01L21/28 , H01L31/0224 , H01L31/0392 , H01L31/20 , H01L21/306
CPC分类号： H01L31/208 , H01L21/28 , H01L31/022466 , H01L31/03921 , Y02E10/50 , Y02P70/521 , Y10S136/29
摘要： A method for repairing a defective semiconductor device, the defective semiconductor device including a semiconductor thin film and a conductive thin film, disposed in the named order, on a conductive surface of a substrate, such that the conductive thin film and the conductive surface of the substrate are electrically short-circuited at a pinhole occurring in the semiconductor thin film to form an electrically short-circuited portion. The method includes the steps of applying desired a voltage through an electrode positioned above a surface of the defective semiconductor device, and moving the electrode along the surface of the defective semiconductor device while maintaining a distance between the electrode and the conductive thin film sufficient to allow a discharge to occur when the electrode is above the electrically short-circuited portion, such that the discharge modifies a region of the conductive thin film which is in electrical contact with the conductive surface of the substrate, to establish an electrically noncontacted state between the conductive thin film and the conductive surface of the substrate.
摘要翻译：一种用于修复有缺陷的半导体器件的方法，所述有缺陷的半导体器件包括半导体薄膜和导电薄膜，其以所述的顺序设置在衬底的导电表面上，使得导电薄膜和导电薄膜的导电表面衬底在半导体薄膜中出现的针孔处电短路以形成电短路部分。该方法包括以下步骤：通过位于缺陷半导体器件的表面上方的电极施加所需的电压，并且沿着有缺陷的半导体器件的表面移动电极，同时保持电极和导电薄膜之间的距离足以允许当电极在电气短路部分之上时，发生放电，使得放电改变与衬底的导电表面电接触的导电薄膜的区域，以在导电之间建立电非接触状态薄膜和基板的导电表面。

4. 发明授权

US5418680A Apparatus for repairing an electrically short-circuited semiconductor device 失效
标题翻译：用于修复电气短路的半导体器件的装置
公开(公告)号：US5418680A
公开(公告)日：1995-05-23
申请号：US155655
申请日：1993-11-22
申请人： Keishi Saito , Tatsuyuki Aoike , Mitsuyuki Niwa , Toshimitsu Kariya , Yuzo Koda
发明人： Keishi Saito , Tatsuyuki Aoike , Mitsuyuki Niwa , Toshimitsu Kariya , Yuzo Koda
IPC分类号： H01L21/28 , H01L31/0224 , H01L31/0392 , H01L31/20 , H05F7/00
CPC分类号： H01L31/208 , H01L21/28 , H01L31/022466 , H01L31/03921 , Y02E10/50 , Y02P70/521 , Y10S136/29
摘要： An apparatus for repairing a defective semiconductor device having an electrically short-circuited portion, wherein the semiconductor device includes a semiconductor thin film and a conductive thin film disposed in the named order on a conductive surface of a substrate and in which the conductive thin film and the conductive surface of the substrate are electrically short-circuited at a pinhole occurring in the semiconductor thin film to form an electrically short-circuited portion so that the semiconductor device is defective. The apparatus includes a substrate holding unit for holding the substrate of the defective semiconductor device and an electrode arranged above the substrate holding unit so that, when the defective semiconductor is positioned on the substrate holding unit, there is a predetermined distance between the electrode and the conductive thin film of the defective semiconductor device, the electrode being capable of moving in relation to the substrate of the defective semiconductor device. The apparatus further includes a voltage applying unit for applying a desired voltage to the electrode, wherein discharge is caused between the electrode and the conductive thin film of the defective semiconductor device by applying a desired voltage to the electrode through the voltage applying means to thereby modify a region of the conductive thin film of the defective semiconductor device in electrical contact with the conductive surface of the substrate of the defective semiconductor device.
摘要翻译：一种用于修复具有电短路部分的有缺陷的半导体器件的装置，其中所述半导体器件包括半导体薄膜和导电薄膜，所述半导体薄膜和导电薄膜按照所述顺序设置在衬底的导电表面上，并且其中导电薄膜和衬底的导电表面在发生在半导体薄膜中的针孔处电短路以形成电短路部分，使得半导体器件有缺陷。该装置包括用于保持有缺陷的半导体器件的衬底的衬底保持单元和布置在衬底保持单元上方的电极，使得当缺陷半导体位于衬底保持单元上时，电极和有缺陷的半导体器件的导电薄膜，电极能够相对于有缺陷的半导体器件的衬底移动。该装置还包括用于向电极施加期望电压的电压施加单元，其中通过施加期望的电压通过电压施加装置在电极和缺陷半导体器件的导电薄膜之间引起放电，从而修改所述有缺陷的半导体器件的导电薄膜的区域与有缺陷的半导体器件的衬底的导电表面电接触。

5. 发明授权

US5527396A Deposited film forming apparatus 失效
标题翻译：沉积成膜装置
公开(公告)号：US5527396A
公开(公告)日：1996-06-18
申请号：US398071
申请日：1995-03-03
申请人： Keishi Saitoh , Tatsuyuki Aoike , Masafumi Sano , Mitsuyuki Niwa , Jinsho Matsuyama , Toshimitsu Kariya , Yuzou Kouda , Ryou Hayashi , Masahiko Tonogaki
发明人： Keishi Saitoh , Tatsuyuki Aoike , Masafumi Sano , Mitsuyuki Niwa , Jinsho Matsuyama , Toshimitsu Kariya , Yuzou Kouda , Ryou Hayashi , Masahiko Tonogaki
IPC分类号： C23C16/50 , C23C16/511 , C23C16/517 , C30B25/02 , C30B25/16 , G03G5/082 , H01L21/205 , H01L29/45 , H01L29/49 , H01L29/786 , H01L31/04 , H01L31/052 , H01L31/075 , H01L31/20 , C23C16/00
CPC分类号： H01L31/076 , C23C16/517 , G03G5/08264 , G03G5/08278 , H01L29/458 , H01L29/4908 , H01L29/78603 , H01L31/056 , H01L31/202 , H01L31/204 , H01L31/206 , Y02E10/52 , Y02E10/548 , Y02P70/521
摘要： A method of quickly depositing a non-single-crystal semiconductor film and forming a silicon-type non-single-crystal photovoltaic device, and a method of continuously manufacturing the photovoltaic devices. By this method the deposited film is formed by decomposing a raw material gas with microwave energy which is lower than the microwave energy required to completely decompose the raw material gas. RF energy is applied at the same time which is higher in energy than the microwave energy. The microwave energy acts on the raw material gas at an internal pressure level of 50 mTorr or lower to form a uniform non-single-crystal semiconductor film with excellent electrical characteristics and reduced light deterioration.
摘要翻译：一种快速沉积非单晶半导体膜并形成硅型非单晶光伏器件的方法，以及连续制造光电器件的方法。通过该方法，通过用低于完全分解原料气体所需的微波能量的微波能分解原料气体来形成沉积膜。在能量上比微波能量高的同时施加RF能量。微波能量在50mTorr以下的内部压力水平下作用于原料气体，形成均匀的非单晶半导体膜，具有优良的电气特性和降低的光劣化。

6. 发明授权

US5417770A Photovoltaic device and a forming method thereof 失效
标题翻译：光伏器件及其形成方法
公开(公告)号：US5417770A
公开(公告)日：1995-05-23
申请号：US81222
申请日：1993-06-25
申请人： Keishi Saitoh , Tatsuyuki Aoike , Masafumi Sano , Mitsuyuki Niwa , Jinsho Matsuyama , Toshimitsu Kariya , Yuzou Kouda , Ryou Hayashi , Masahiko Tonogaki
发明人： Keishi Saitoh , Tatsuyuki Aoike , Masafumi Sano , Mitsuyuki Niwa , Jinsho Matsuyama , Toshimitsu Kariya , Yuzou Kouda , Ryou Hayashi , Masahiko Tonogaki
IPC分类号： C23C16/50 , C23C16/511 , C23C16/517 , C30B25/02 , C30B25/16 , G03G5/082 , H01L21/205 , H01L29/45 , H01L29/49 , H01L29/786 , H01L31/04 , H01L31/052 , H01L31/075 , H01L31/20 , H01L31/18
CPC分类号： H01L31/076 , C23C16/517 , G03G5/08264 , G03G5/08278 , H01L29/458 , H01L29/4908 , H01L29/78603 , H01L31/056 , H01L31/202 , H01L31/204 , H01L31/206 , Y02E10/52 , Y02E10/548 , Y02P70/521
摘要： A method of quickly depositing a non-single-crystal semiconductor film and forming a silicon-type non-single-crystal photovoltaic device, and a method of continuously manufacturing the photovoltaic devices. By this method the deposited film is formed by decomposing a raw material gas with microwave energy which is lower than the microwave energy required to completely decompose the raw material gas. RF energy is applied at the same time which is higher in energy than the microwave energy. The microwave energy acts on the raw material gas at an internal pressure level of 50 mTorr or lower to form a uniform non-single-crystal semiconductor film with excellent electrical characteristics and reduced light deterioration.
摘要翻译：一种快速沉积非单晶半导体膜并形成硅型非单晶光伏器件的方法，以及连续制造光电器件的方法。通过该方法，通过用低于完全分解原料气体所需的微波能量的微波能分解原料气体来形成沉积膜。在能量上比微波能量高的同时施加RF能量。微波能量在50mTorr以下的内部压力水平下作用于原料气体，形成均匀的非单晶半导体膜，具有优良的电气特性和降低的光劣化。

7. 发明授权

US5362684A Non-monocrystalline silicon carbide semiconductor, process of production thereof, and semiconductor device employing the same 失效
标题翻译：非单晶碳化硅半导体，其制造方法以及采用该半导体器件的半导体器件
公开(公告)号：US5362684A
公开(公告)日：1994-11-08
申请号：US840537
申请日：1992-02-25
申请人： Keishi Saito , Tatsuyuki Aoike , Toshimitsu Kariya , Yuzo Koda
发明人： Keishi Saito , Tatsuyuki Aoike , Toshimitsu Kariya , Yuzo Koda
IPC分类号： H01L21/205 , H01L29/78 , H01L29/786 , H01L31/04 , H01L31/08 , H01L31/10 , H01L31/20
CPC分类号： H01L31/204 , Y02E10/50 , Y02P70/521 , Y10S438/931
摘要： A non-monocrystalline silicon carbide semiconductor comprises carbon atoms, silicon atoms, and at least one of hydrogen atoms and halogen atoms, the non-monocrystalline silicon carbide semiconductor having therein microvoids with an average radius of not more than 3.5.ANG. at a microvoid density of not more than 1.times.10.sup.19 cm.sup.-3.
摘要翻译：非单晶碳化硅半导体包含碳原子，硅原子和氢原子和卤素原子中的至少一个，非单晶碳化硅半导体具有微孔密度为平均半径不超过3.5的微孔不超过1×1019 cm-3。

8. 发明授权

US5510631A Non-monocrystalline silicon carbide semiconductor and semiconductor device employing the same 失效
标题翻译：非单晶碳化硅半导体和采用其的半导体器件
公开(公告)号：US5510631A
公开(公告)日：1996-04-23
申请号：US289258
申请日：1994-08-11
申请人： Keishi Saito , Tatsuyuki Aoike , Toshimitsu Kariya , Yuzo Koda
发明人： Keishi Saito , Tatsuyuki Aoike , Toshimitsu Kariya , Yuzo Koda
IPC分类号： H01L21/205 , H01L29/78 , H01L29/786 , H01L31/04 , H01L31/08 , H01L31/10 , H01L31/20 , H01L31/0312 , H01L29/76 , H01L31/06
CPC分类号： H01L31/204 , Y02E10/50 , Y02P70/521 , Y10S438/931
摘要： A non-monocrystalline silicon carbide semiconductor comprises carbon atoms, silicon atoms, and at least one of hydrogen atoms and halogen atoms, the non-monocrystalline silicon carbide semiconductor having therein microvoids with an average radius of not more than 3.5 .ANG. at a microvoid density of not more than 1.times.10.sup.19 cm.sup.-3.
摘要翻译：非单晶碳化硅半导体包含碳原子，硅原子和氢原子和卤素原子中的至少一个，非单晶碳化硅半导体具有微孔密度为平均半径不超过3.5的微孔不超过1×1019 cm-3。

9. 发明授权

US4906542A Light receiving member having a multilayered light receiving layer composed of a lower layer made of aluminum-containing inorganic material and an upper layer made of non-single-crystal silicon material 失效
标题翻译：具有由含铝无机材料制成的下层和由非单晶硅材料制成的上层构成的多层光接收层的光接收元件
公开(公告)号：US4906542A
公开(公告)日：1990-03-06
申请号：US183998
申请日：1988-04-20
申请人： Tatsuyuki Aoike , Masafumi Sano , Takehito Yoshino , Toshimitsu Kariya , Hiroaki Niino
发明人： Tatsuyuki Aoike , Masafumi Sano , Takehito Yoshino , Toshimitsu Kariya , Hiroaki Niino
IPC分类号： G03G5/082
CPC分类号： G03G5/08214
摘要： A light receiving member for electrophotography made up of an aluminum support and a multilayered light receiving layer exhibiting photoconductivity formed on the aluminum support, wherein the multilayered light receiving layer consists of a lower layer in contact with the support and an upper layer, the lower layer being made of an inorganic material containing at least aluminum atom (Al), silicon atoms (Si) and hydrogen atoms (H), and having portion in which the aluminum atoms (Al), silicon atoms (Si), and hydrogen atoms (H) are unevenly distributed across the layer thickness, the upper layer being made of a non-single-crystal material composed of silicon atoms (Si) as the matrix and at least either of hydrogen atoms (H) or halogen atoms (X) and containing at least one of carbon atoms, nitrogen atoms (N) and oxygen atoms (O) in the layer region in adjacent with the lower layer. The light receiving member for electrophotography can overcome all of the foregoing problems and exhibits extremely excellent electrical property, optical property, photoconductivity, durability, image property and circumstantial property of use.

10. 发明授权

US5358811A Electrophotographic method using an amorphous silicon light receiving member with a latent image support layer and a developed image support layer and insulating toner having a volume average particle size of 4.5 to 9.0 micron 失效
标题翻译：使用具有潜像载体层和显影图像载体层的非晶硅光接收元件和体积平均粒度为4.5至9.0微米的绝缘调色剂的电子照相方法
公开(公告)号：US5358811A
公开(公告)日：1994-10-25
申请号：US53822
申请日：1993-04-29
申请人： Koji Yamazaki , Toshimitsu Kariya , Tatsuyuki Aoike , Toshiyuki Ehara , Takehito Yoshino , Hirokazu Otoshi
发明人： Koji Yamazaki , Toshimitsu Kariya , Tatsuyuki Aoike , Toshiyuki Ehara , Takehito Yoshino , Hirokazu Otoshi
IPC分类号： G03G5/082 , G03G9/08 , G03G13/08 , G03G13/01
CPC分类号： G03G13/08 , G03G5/08235 , G03G9/0819 , G03G9/0821
摘要： An electrophotographic image-forming and developing method using as light receiving member an amorphous silicon light receiving member which comprises a substrate and a light receiving layer disposed on said substrate, said light receiving layer comprising a first layer capable of exhibiting a photoconductivity, a second layer capable of supporting a latent image and a third layer capable of supporting a developed image being laminated in this order on said substrate, said first layer being formed of an amorphous material containing silicon atoms as a matrix, and at least one kind of atoms selected from the group consisting of hydrogen atoms and halogen atoms, said second layer being formed of an amorphous material containing silicon atoms as a matrix, carbon atoms, atoms of an element belonging to Group III of the Periodic Table, and at least one kind of atoms selected from the group consisting of hydrogen atoms and halogen atoms, and said third layer being formed of an amorphous material containing silicon atoms as a matrix, carbon atoms and at least one kind of atoms selected from the group consisting of hydrogen atoms and halogen atoms; and using as said toner a fine particle insulating toner having a volume average particle size in the range of 4.5 to 9 um and an apparent viscosity at 100.degree. C. in the range of 1.times.10.sup.4 to 2.times.10.sup.5 poise.
摘要翻译：一种电子照相图像形成和显影方法，其使用非晶硅光接收元件作为光接收元件，所述非晶硅光接收元件包括基板和设置在所述基板上的光接收层，所述光接收层包括能够呈现光电导性的第一层，第二层能够支撑潜像和能够支持在所述基板上依次层叠的显影图像的第三层，所述第一层由含有硅原子作为基体的非晶质材料形成，以及至少一种选自由氢原子和卤素原子组成的组，所述第二层由含有硅原子作为基体的非晶态材料形成，碳原子，属于周期表第III族的元素的原子，以及选出的至少一种原子由氢原子和卤素原子组成的组，所述第三层由无定形配体形成含有硅原子作为基体的碳原子和选自氢原子和卤素原子的至少一种原子; 并且使用体积平均粒度在4.5至9μm的细颗粒绝缘调色剂和在100℃下的表观粘度在1×10 4至2×105泊的范围内作为所述调色剂。

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