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1. 发明授权

US6031198A Plasma processing method and apparatus 失效
标题翻译：等离子体处理方法和装置
公开(公告)号：US6031198A
公开(公告)日：2000-02-29
申请号：US80922
申请日：1998-05-19
申请人： Koichiro Moriyama , Yukito Aota , Masahiro Kanai , Hirokazu Otoshi
发明人： Koichiro Moriyama , Yukito Aota , Masahiro Kanai , Hirokazu Otoshi
IPC分类号： H05H1/46 , C23C16/50 , C23C16/511 , C23F4/00 , H01J37/32 , H01L21/205 , H01L21/302 , H01L21/3065 , B23K9/00
CPC分类号： H01J37/32165 , H01J37/32935 , H01J37/3299
摘要： A plasma processing method for processing a substrate includes a discharge beginning step of supplying a second high-frequency power into a processing chamber through an impedance matching circuit and then supplying a first high-frequency power larger than a power used in processing into the processing chamber to generate a plasma. An adjustment step of reducing the first high-frequency power to be close to the value used in processing, increasing the second high-frequency power to be close to the value in processing, and then adjusting the first high-frequency power to obtain a plasma strength of a predetermined value is part of the method. The plasma processing step of causing the impedance matching circuit to perform a matching operation and simultaneously adjusting the first high-frequency power to obtain a plasma strength of a desired value in processing is also part of the method. Plasma discharge can be automatically, smoothly begun with high reproducibility, and stable plasma discharge can be maintained. Even in the case of disappearance of discharge, plasma discharge can be quickly restarted.
摘要翻译：用于处理衬底的等离子体处理方法包括：放电开始步骤，通过阻抗匹配电路将第二高频电力提供到处理室，然后将大于处理中使用的功率的第一高频功率提供给处理室以产生等离子体。将第一高频功率降低到接近于处理中使用的值的调整步骤，将第二高频功率提高到接近处理值，然后调整第一高频功率以获得等离子体预定值的强度是该方法的一部分。等离子体处理步骤是使阻抗匹配电路执行匹配操作并且同时调节第一高频功率以获得处理中期望值的等离子体强度。等离子体放电可以以高再现性自动平稳地开始，并且可以保持稳定的等离子体放电。即使在放电消失的情况下，可以快速重新开始等离子体放电。

2. 发明授权

US5030476A Process and apparatus for the formation of a functional deposited film on a cylindrical substrate by means of microwave plasma chemical vapor deposition 失效
标题翻译：通过微波等离子体化学气相沉积在圆柱形基底上形成功能沉积膜的方法和装置
公开(公告)号：US5030476A
公开(公告)日：1991-07-09
申请号：US526536
申请日：1990-05-21
申请人： Ryuji Okamura , Hirokazu Otoshi , Tetsuya Takei
发明人： Ryuji Okamura , Hirokazu Otoshi , Tetsuya Takei
IPC分类号： C23C16/50 , C23C16/46 , C23C16/511
CPC分类号： C23C16/511 , C23C16/46
摘要： A process for forming a functional deposited film which is adapted for use in an apparatus which comprises a substantially enclosed reaction chamber, a plurality of cylindrical substrates arranged to surround a discharge space and a microwave introduction means provided at least at one end of each cylindrical substrate and wherein microwave energy is introduced so that a glow discharge plasma containing reactant gases derived from starting gases is formed in the discharge space thereby forming a deposited film on each cylindrical substrate is described. The process is characterized in that a temperature control means is provided in the inside of each of said plurality of cylindrical substrates and simultaneous with the introduction of a thermally conductive gas, the thermally conductive gas is exhausted from the one end of each cylindrical substrate in the vicinity of the microwave introduction means. The process enables the deposited film of good quality to be formed stably at high speed and the deposited film is useful as an element member for semiconductive devices, photosensitive devices for electrophotography, photovoltaic devices, other electronic elements and optical elements.
摘要翻译：一种用于形成功能性沉积膜的方法，其适用于包括基本封闭的反应室的设备，布置成围绕放电空间的多个圆柱形基板和设置在每个圆柱形基板的至少一端的微波引入装置并且其中引入微波能量，使得在放电空间中形成含有源自起始气体的反应气体的辉光放电等离子体，从而在每个圆柱形基板上形成沉积膜。该方法的特征在于，在所述多个圆柱形基板的每一个的内部设置有温度控制装置，并且与引入导热气体同时，导热气体从每个圆柱形基板的一端排出微波引入装置附近。该方法能够以高速稳定地形成高质量的沉积膜，并且沉积膜可用作半导体器件的元件部件，电子照相用光敏器件，光电器件，其它电子元件和光学元件。

3. 发明授权

US06273955B1 Film forming apparatus 失效
标题翻译：成膜装置
公开(公告)号：US06273955B1
公开(公告)日：2001-08-14
申请号：US08704138
申请日：1996-08-28
申请人： Takehito Yoshino , Hiroshi Echizen , Masahiro Kanai , Hirokazu Otoshi , Atsushi Yasuno , Kohei Yoshida , Koichiro Moriyama , Masatoshi Tanaka
发明人： Takehito Yoshino , Hiroshi Echizen , Masahiro Kanai , Hirokazu Otoshi , Atsushi Yasuno , Kohei Yoshida , Koichiro Moriyama , Masatoshi Tanaka
IPC分类号： C23C1600
CPC分类号： C23C16/545 , C23C16/24 , C23C16/4401 , C23C16/511 , H01L31/202 , H01L31/204 , H01L31/206 , Y02E10/50 , Y02P70/521
摘要： A film forming apparatus for forming a plurality of films on a substrate through a continuous process, comprising a plurality of vacuum chambers in communication to each other via connection, at least vacuum chamber having internally a treatment detachable from the vacuum chamber for fulfilling a predetermined treatment on the substrate.
摘要翻译：一种用于通过连续工艺在基板上形成多个膜的成膜装置，包括通过连接彼此连通的多个真空室，至少具有可从真空室中分离的处理的真空室，用于实现预定处理在基板上。

4. 发明授权

US5358811A Electrophotographic method using an amorphous silicon light receiving member with a latent image support layer and a developed image support layer and insulating toner having a volume average particle size of 4.5 to 9.0 micron 失效
标题翻译：使用具有潜像载体层和显影图像载体层的非晶硅光接收元件和体积平均粒度为4.5至9.0微米的绝缘调色剂的电子照相方法
公开(公告)号：US5358811A
公开(公告)日：1994-10-25
申请号：US53822
申请日：1993-04-29
申请人： Koji Yamazaki , Toshimitsu Kariya , Tatsuyuki Aoike , Toshiyuki Ehara , Takehito Yoshino , Hirokazu Otoshi
发明人： Koji Yamazaki , Toshimitsu Kariya , Tatsuyuki Aoike , Toshiyuki Ehara , Takehito Yoshino , Hirokazu Otoshi
IPC分类号： G03G5/082 , G03G9/08 , G03G13/08 , G03G13/01
CPC分类号： G03G13/08 , G03G5/08235 , G03G9/0819 , G03G9/0821
摘要： An electrophotographic image-forming and developing method using as light receiving member an amorphous silicon light receiving member which comprises a substrate and a light receiving layer disposed on said substrate, said light receiving layer comprising a first layer capable of exhibiting a photoconductivity, a second layer capable of supporting a latent image and a third layer capable of supporting a developed image being laminated in this order on said substrate, said first layer being formed of an amorphous material containing silicon atoms as a matrix, and at least one kind of atoms selected from the group consisting of hydrogen atoms and halogen atoms, said second layer being formed of an amorphous material containing silicon atoms as a matrix, carbon atoms, atoms of an element belonging to Group III of the Periodic Table, and at least one kind of atoms selected from the group consisting of hydrogen atoms and halogen atoms, and said third layer being formed of an amorphous material containing silicon atoms as a matrix, carbon atoms and at least one kind of atoms selected from the group consisting of hydrogen atoms and halogen atoms; and using as said toner a fine particle insulating toner having a volume average particle size in the range of 4.5 to 9 um and an apparent viscosity at 100.degree. C. in the range of 1.times.10.sup.4 to 2.times.10.sup.5 poise.
摘要翻译：一种电子照相图像形成和显影方法，其使用非晶硅光接收元件作为光接收元件，所述非晶硅光接收元件包括基板和设置在所述基板上的光接收层，所述光接收层包括能够呈现光电导性的第一层，第二层能够支撑潜像和能够支持在所述基板上依次层叠的显影图像的第三层，所述第一层由含有硅原子作为基体的非晶质材料形成，以及至少一种选自由氢原子和卤素原子组成的组，所述第二层由含有硅原子作为基体的非晶态材料形成，碳原子，属于周期表第III族的元素的原子，以及选出的至少一种原子由氢原子和卤素原子组成的组，所述第三层由无定形配体形成含有硅原子作为基体的碳原子和选自氢原子和卤素原子的至少一种原子; 并且使用体积平均粒度在4.5至9μm的细颗粒绝缘调色剂和在100℃下的表观粘度在1×10 4至2×105泊的范围内作为所述调色剂。

5. 发明授权

US06660094B2 Apparatus and method for forming deposited film 失效
标题翻译：用于形成沉积膜的装置和方法
公开(公告)号：US06660094B2
公开(公告)日：2003-12-09
申请号：US09867493
申请日：2001-05-31
申请人： Hirokazu Otoshi , Hiroshi Izawa , Masatoshi Tanaka
发明人： Hirokazu Otoshi , Hiroshi Izawa , Masatoshi Tanaka
IPC分类号： C23C1600
CPC分类号： C23C16/45561 , C23C16/455 , C23C16/545 , G03B9/02
摘要： A deposited film forming apparatus comprises: a chamber capable of maintaining an interior thereof under vacuum; a source gas supply piping for supplying a source gas into the chamber; an evacuation system piping for evacuating the interior of the chamber; a gas supply piping for use in opening to atmosphere, for supplying a gas for returning a pressure within the chamber to atmospheric pressure, wherein a plurality of shut-off valves are provided in series between a gas source of the gas for returning the pressure within the chamber to atmospheric pressure and the chamber, and a pressure gauge and/or evacuating means are provided between the plurality of shut-off valves.
摘要翻译：沉积膜形成装置包括：能够将其内部保持在真空下的室; 用于将源气体供应到所述室中的源气体供应管道; 用于排空室内部的抽空系统管道; 用于向大气开放的气体供应管道，用于供应用于将所述室内的压力返回到大气压力的气体，其中多个截止阀串联设置在所述气体的气体源之间，用于使所述气体中的压力返回所述室与大气压力和所述室，以及在所述多个截止阀之间设置压力计和/或排气装置。

6. 发明授权

US5360484A Microwave plasma CVD apparatus provided with a microwave transmissive window made of specific ceramics for the formation of a functional deposited film 失效
标题翻译：微波等离子体CVD装置设置有由特定陶瓷制成的微波透射窗，用于形成功能沉积膜
公开(公告)号：US5360484A
公开(公告)日：1994-11-01
申请号：US63048
申请日：1993-05-19
申请人： Yasuyoshi Takai , Tetsuya Takei , Hirokazu Otoshi , Ryuji Okamura
发明人： Yasuyoshi Takai , Tetsuya Takei , Hirokazu Otoshi , Ryuji Okamura
IPC分类号： C23C16/50 , C23C16/511 , G03G5/08 , H01J37/32 , H01L21/205
CPC分类号： C23C16/511 , H01J37/32238 , H01J37/32467
摘要： An improved microwave plasma CVD apparatus for forming a functional deposited film which is provided with a microwave transmissive window composed of a sintered alpha-alumina ceramics body containing alpha-alumina as a matrix comprised of fine particles with a mean particle size d satisfying the equation 0.5 .mu.m.ltoreq.d.ltoreq.50 .mu.m and with a ratio of .rho..sub.2 /.rho..sub.1 between the theoretical density .rho..sub.1 and the bulk density .rho..sub.2 satisfying the equation 0.800.ltoreq..rho..sub.2 /.rho..sub.1 .ltoreq.0.995.
摘要翻译：一种用于形成功能性沉积膜的改进的微波等离子体CVD装置，其具有由α-氧化铝烧结体构成的微波透射窗，所述烧结体包含α-氧化铝作为基质，其平均粒径d满足式在理论密度rho 1和体积密度rho 2之间的rho 2 / rho 1的比值满足方程式0.800

7. 发明授权

US07001640B2 Apparatus and method for forming deposited film 失效
标题翻译：用于形成沉积膜的装置和方法
公开(公告)号：US07001640B2
公开(公告)日：2006-02-21
申请号：US10627603
申请日：2003-07-28
申请人： Hirokazu Otoshi , Hiroshi Izawa , Masatoshi Tanaka
发明人： Hirokazu Otoshi , Hiroshi Izawa , Masatoshi Tanaka
IPC分类号： C23C16/00
CPC分类号： C23C16/4402 , C23C16/545 , Y10T137/0452
摘要： The object of the present invention is to provide an apparatus and method for forming a deposited film which can repeatedly form a large amount of functional deposited films with good reproducibility without degradation in the characteristics of films formed even when gas leakage occurs in a shut-off valve, and without reducing the yield as a result when gas leakage occurs in the shut-off valve, by immediately detecting and repairing it. The deposited film forming apparatus according to the present invention comprises: a chamber capable of maintaining an interior thereof under vacuum; a source gas supply piping for supplying a source gas into the chamber; an evacuation system piping for evacuating the interior of the chamber; a gas supply piping for use in opening to atmosphere, for supplying a gas for returning a pressure within the chamber to atmospheric pressure, wherein a plurality of shut-off valves are provided in series between a gas source of the gas for returning the pressure within the chamber to the atmospheric pressure and the chamber, and a pressure-gauge and/or evacuating means are provided between the plurality of shut-off valves.
摘要翻译：本发明的目的是提供一种用于形成沉积膜的装置和方法，其可以重复地形成大量的具有良好重现性的功能性沉积膜，而不会在形成的膜的特性中劣化，即使在关闭时发生气体泄漏阀，并且在通过立即检测和修理关闭阀时发生气体泄漏的结果而不降低产量。根据本发明的沉积膜形成装置包括：能够将其内部保持在真空下的室; 用于将源气体供应到所述室中的源气体供应管道; 用于排空室内部的抽空系统管道; 用于向大气开放的气体供应管道，用于供应用于将所述室内的压力返回到大气压力的气体，其中多个截止阀串联设置在所述气体的气体源之间，用于使所述气体中的压力返回所述室到大气压力和所述室，并且在所述多个截止阀之间设置有压力表和/或排气装置。

8. 发明授权

US5637358A Microwave plasma chemical vapor deposition process using a microwave window and movable, dielectric sheet 失效
标题翻译：微波等离子体化学气相沉积工艺使用微波窗和可动电介质片
公开(公告)号：US5637358A
公开(公告)日：1997-06-10
申请号：US376652
申请日：1995-01-20
申请人： Hirokazu Otoshi , Keishi Saitoh , Ryuji Okamura , Koichi Matsuda
发明人： Hirokazu Otoshi , Keishi Saitoh , Ryuji Okamura , Koichi Matsuda
IPC分类号： C23C16/50 , C23C16/511 , H01J37/32 , C23C16/00
CPC分类号： C23C16/511 , H01J37/32238 , H01J37/32495
摘要： In a microwave plasma chemical vapor deposition apparatus for forming a functional deposited film on a substrate which comprises a substantially enclosed film-forming chamber comprising a circumferential wall having an end portion thereof hermetically provided with a microwave introducing window to which a waveguide extending from a microwave power source is connected, said film-forming chamber having a discharge space for causing plasma discharge of resulting in forming a deposited film on a substrate, said substrate being positioned on a substrate holder arranged in said film-forming chamber and said film-forming chamber being provided with means for supplying a film-forming raw material gas into said discharge space and means for evacuating said film-forming chamber, the improvement which comprises a dielectric sheet being movably placed on the surface of said microwave introducing window situated in said film-forming chamber in a state that said dielectric sheet is face to face contacted with said surface of the microwave introducing window.
摘要翻译：在用于在基板上形成功能沉积膜的微波等离子体化学气相沉积设备中，该微波等离子体化学气相沉积设备包括一个基本上封闭的成膜室，该室具有一个圆周壁，该圆周壁的端部气密地设置有一个微波引入窗口，电源连接，所述成膜室具有用于引起等离子体放电的放电空间，导致在基板上形成沉积膜，所述基板位于布置在所述成膜室中的基板保持器和所述成膜室设置有用于将成膜原料气体供应到所述放电空间的装置和用于抽出所述成膜室的装置，其改进包括可移动地放置在位于所述膜形成室中的所述微波引入窗口的表面上的电介质片，形成室，其处于所述电介质片面对面的状态与微波引入窗口的所述表面发生反应。

9. 发明授权

US5514506A Light receiving member having a multi-layered light receiving layer with an enhanced concentration of hydrogen or/and halogen atoms in the vicinity of the interface of adjacent layers 失效
标题翻译：具有在相邻层的界面附近具有增强的氢或/和卤素原子浓度的多层光接收层的光接收元件
公开(公告)号：US5514506A
公开(公告)日：1996-05-07
申请号：US165840
申请日：1993-12-14
申请人： Yasuyoshi Takai , Tetsuya Takei , Hirokazu Otoshi , Ryuji Okamura , Hiroyuki Katagiri , Satoshi Kojima
发明人： Yasuyoshi Takai , Tetsuya Takei , Hirokazu Otoshi , Ryuji Okamura , Hiroyuki Katagiri , Satoshi Kojima
IPC分类号： G03G5/082
CPC分类号： G03G5/08228 , G03G5/08242
摘要： A light receiving member comprising a substrate and a light receiving layer disposed on said substrate, said light receiving layer having a stacked structure comprising a plurality of constituent layers each being composed of a non-single crystal material containing silicon atoms as a matrix and at least either hydrogen atoms or halogen atoms, characterized in that said light receiving layer has a region containing at least one kind of atoms selected from the group consisting of hydrogen atoms and halogen atoms at an enhanced concentration distribution in the thickness direction in the vicinity of at least one layer interface of the light receiving layer.
摘要翻译：一种受光部件，包括基板和设置在所述基板上的光接收层，所述光接收层具有堆叠结构，所述层叠结构包括多个构成层，每个构成层由含有硅原子作为基质的非单晶材料构成，并且至少氢原子或卤素原子，其特征在于，所述光接收层具有包含至少一种选自氢原子和卤原子的原子的区域，其浓度分布在厚度方向上至少在附近至少光接收层的一层界面。

10. 发明授权

US5443645A Microwave plasma CVD apparatus comprising coaxially aligned multiple gas pipe gas feed structure 失效
标题翻译：微波等离子体CVD装置，包括同轴排列的多个气体管道气体馈送结构
公开(公告)号：US5443645A
公开(公告)日：1995-08-22
申请号：US173948
申请日：1993-12-28
申请人： Hirokazu Otoshi , Tetsuya Takei , Yasuyoshi Takai , Ryuji Okamura , Shigeru Shirai , Teruo Misumi
发明人： Hirokazu Otoshi , Tetsuya Takei , Yasuyoshi Takai , Ryuji Okamura , Shigeru Shirai , Teruo Misumi
IPC分类号： C23C16/24 , C23C16/44 , C23C16/455 , C23C16/511 , C23C16/50
CPC分类号： C23C16/24 , C23C16/455 , C23C16/45578 , C23C16/511
摘要： A deposited film-forming apparatus comprising a reaction chamber capable of maintaining at a reduced pressure, means for arranging a substrate on which a film is to be formed in said reaction chamber, a gas feed means for supplying a gaseous raw material into said reaction chamber and means for introducing a microwave energy into said reaction chamber, characterized in that said gas feed means is arranged in the space circumscribed by said substrate, said gas feed means comprises a multiple pipe structure, said multiple pipe structure being connected to a gas supply source for supplying said gaseous raw material, the respective constituent pipes of said multiple pipe structure being provided with a plurality of gas spouting holes such that said gas spouting holes are in communication with each other, and means for applying a bias voltage between said substrate and said gas feed means.
摘要翻译：一种沉积膜形成装置，包括能够在减压下保持的反应室，用于布置在其上形成有膜的基板的装置，用于将气态原料供给到所述反应室中的气体供给装置以及用于将微波能量引入所述反应室的装置，其特征在于，所述气体供给装置布置在由所述基板限定的空间中，所述气体供给装置包括多个管道结构，所述多个管道结构连接到气体供应源为了供应所述气态原料，所述多管结构的各构成管设置有多个气体喷出孔，使得所述气体喷出孔彼此连通，以及用于在所述基板和所述气体进料装置。

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