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1. 发明授权

US06383576B1 Method of producing a microcrystal semiconductor thin film 有权
标题翻译：微晶半导体薄膜的制造方法
公开(公告)号：US06383576B1
公开(公告)日：2002-05-07
申请号：US09545578
申请日：2000-04-07
申请人： Jinsho Matsuyama
发明人： Jinsho Matsuyama
IPC分类号： H01L310264
CPC分类号： H01L31/03685 , H01L21/67155 , H01L31/03687 , H01L31/076 , H01L31/1804 , H01L31/1812 , H01L31/1876 , Y02E10/545 , Y02E10/547 , Y02E10/548 , Y02P70/521
摘要： A photovoltaic element of the present invention is a photovoltaic element having a plurality of pin junctions each formed of a p-type semiconductor layer, an i-type semiconductor layer, and an n-type semiconductor layer each comprising a non-single-crystal material comprising a Group IVA element as a principal component, the photovoltaic element having a first pin junction comprising microcrystal silicon carbide (hereinafter referred to as microcrystal SiC) as a principal component of the i-type semiconductor layer and a second pin junction comprising microcrystal silicon (hereinafter referred to as microcrystal Si) as a principal component of the i-type semiconductor layer, wherein the first pin junction is provided closer to the light incidence side than the second pin junction. Provided thereby are a low cost photovoltaic element which exhibits little photodeterioration and high photoelectric conversion efficiency, and a production method of the photovoltaic element capable of forming i-type microcrystal silicon and microcrystal SiC at a practical deposition rate.
摘要翻译：本发明的光电元件是具有由p型半导体层，i型半导体层和n型半导体层构成的多个引脚接点的光电元件，其各自包含非单晶材料包括IVA族元素作为主要成分，所述光电元件具有包含作为i型半导体层的主要成分的微晶碳化硅（以下称为微晶SiC）的第一pin结和包含微晶硅的第二pin结（以下称为微晶Si）作为i型半导体层的主要成分，其中第一pin结设置成比第二pin结更靠近光入射侧。由此，提供了光电转换效率低，光电转换效率高的低成本光电元件，能够以实际的沉积速度形成i型微晶硅和微晶SiC的光电元件的制造方法。

2. 发明授权

US5591492A Process for forming and etching a film to effect specific crystal growth from activated species 失效
标题翻译：用于形成和蚀刻膜以从活化物质实现特定晶体生长的方法
公开(公告)号：US5591492A
公开(公告)日：1997-01-07
申请号：US396065
申请日：1995-02-28
申请人： Yutaka Hirai , Jinsho Matsuyama , Shigeru Shirai
发明人： Yutaka Hirai , Jinsho Matsuyama , Shigeru Shirai
IPC分类号： C23C16/24 , C23C16/452 , H01L21/205 , B05D3/00 , C30B28/14 , H05H1/02
CPC分类号： C23C16/24 , C23C16/452 , H01L21/02422 , H01L21/0245 , H01L21/02532 , H01L21/02576 , H01L21/02579 , H01L21/0262
摘要： A process for forming a deposited film comprises the steps of:(a) arranging previously a substrate for formation of a deposited film in a film forming space;(b) forming a deposited film on said substrate by introducing an activated species (A) formed by decomposition of a compound (SX) containing silicon and a halogen and an activated species (B) formed from a chemical substance (B) for film formation which is chemically mutually reactive with said activated species (A) separately from each other into said film forming space to effect chemical reaction therebetween; and(c) exposing the deposited film growth surface to a gaseous substance (E) having etching action on the deposited film to be formed during the film forming step (b) to apply etching action on the deposited film growth surface, thereby effecting preferentially crystal growth in a specific face direction.
摘要翻译：一种形成沉积膜的方法包括以下步骤：（a）在成膜空间中预先布置用于形成沉积膜的衬底; （b）通过引入由含有硅和卤素的化合物（SX）分解而形成的活化物质（A）和由用于成膜的化学物质（B）形成的活化物质（B））在所述基材上形成沉积膜其与所述活化物质（A）在化学上相互反应，彼此分离成所述成膜空间，以在其间进行化学反应; 和（c）在成膜步骤（b）中将沉积的膜生长表面暴露于对待形成的沉积膜上具有蚀刻作用的气态物质（E），以在沉积膜生长表面上施加蚀刻作用，从而优先实现晶体在特定面向方向的增长。

3. 发明授权

US5421909A Photovoltaic conversion device 失效
标题翻译：光伏转换装置
公开(公告)号：US5421909A
公开(公告)日：1995-06-06
申请号：US24252
申请日：1993-03-01
申请人： Nobuyuki Ishikawa , Keishi Saito , Soichiro Kawakami , Jinsho Matsuyama , Toshimitsu Kariya , Yuzo Kouda , Naoto Okada
发明人： Nobuyuki Ishikawa , Keishi Saito , Soichiro Kawakami , Jinsho Matsuyama , Toshimitsu Kariya , Yuzo Kouda , Naoto Okada
IPC分类号： H01L31/04 , H01L31/0216 , H01L31/0224 , H01L31/052 , H01L31/0232
CPC分类号： H01L31/02167 , H01L31/022466 , H01L31/0543 , H01L31/0547 , H01L31/056 , H01L31/0236 , Y02E10/52 , Y02E10/543
摘要： A photovoltaic device having a semiconductor layer; front and back electrodes; and a surface protection layer adjacent to the light incident side, wherein granules of a material different from that of the surface protection layer are disposed in the surface protection layer.
摘要翻译：具有半导体层的光电器件; 前后电极; 以及与光入射侧相邻的表面保护层，其中与表面保护层的材料不同的材料颗粒设置在表面保护层中。

4. 发明授权

US06946858B2 Method and apparatus for measuring photoelectric conversion device, and process and apparatus for producing photoelectric conversion device 失效
标题翻译：用于测量光电转换装置的方法和装置，以及用于生产光电转换装置的方法和装置
公开(公告)号：US06946858B2
公开(公告)日：2005-09-20
申请号：US10627923
申请日：2003-07-28
申请人： Jinsho Matsuyama
发明人： Jinsho Matsuyama
IPC分类号： G01J1/00 , G01M11/00 , G01R31/00 , G01R31/26 , H01J40/14 , H01L31/04 , H01M14/00
CPC分类号： G01R31/2603 , H02S50/10
摘要： A measuring method for measuring current-voltage characteristics of a photoelectric conversion device by irradiating light to said photoelectric conversion device and a reference device corresponding to said photoelectric conversion device at the same time while detecting an irradiance of said light using said reference device, characterized in that a light responsive time constant of a irradiance detection circuit in which said reference device is used is adjusted so that said light responsive time constant of said irradiance detection circuit comes closer to a light responsive time constant of said photoelectric conversion device. An apparatus for practicing said measuring method.
摘要翻译：一种测量方法，用于通过在使用所述参考装置检测所述光的辐照度的同时同时向所述光电转换装置照射光并对应于所述光电转换装置的参考装置来测量光电转换装置的电流 - 电压特性，其特征在于，调整使用所述参考装置的辐照度检测电路的光响应时间常数，使得所述辐照度检测电路的所述光响应时间常数更接近所述光电转换装置的光响应时间常数。一种用于实施所述测量方法的装置。

5. 发明授权

US06331672B1 Photovoltaic cell and method for manufacturing the same 失效
标题翻译：光伏电池及其制造方法
公开(公告)号：US06331672B1
公开(公告)日：2001-12-18
申请号：US08807590
申请日：1997-02-27
申请人： Koichi Matsuda , Jinsho Matsuyama
发明人： Koichi Matsuda , Jinsho Matsuyama
IPC分类号： H01L3100
CPC分类号： H01L31/0236 , H01L31/022425 , H01L31/022433 , H01L31/02366 , H01L31/056 , Y02E10/52
摘要： A photovoltaic cell comprising a substrate, a back reflector, a transparent conductive layer, and a photoelectric conversion layer, wherein the transparent conductive layer has holes on the surface, is provided. Additionally, a photovoltaic cell comprising a substrate, a back reflector, a transparent conductive layer, and a photoelectric conversion layer, wherein diffuse reflectance of the back reflector is 3 to 50%, is provided. According to the above-described structures, processability, yield and reliability of the photovoltaic cell can be improved, while photoelectric conversion efficiency is maintained at a high level due to back-surface diffuse reflection.
摘要翻译：提供了一种包括基板，后反射器，透明导电层和光电转换层的光电池，其中透明导电层在表面上具有孔。此外，提供了包括基板，后反射器，透明导电层和光电转换层的光伏电池，其中后反射器的漫反射率为3至50％。根据上述结构，可以提高光伏电池的加工性，成品率和可靠性，同时由于背面漫反射，光电转换效率保持在高水平。

6. 发明授权

US06184456B2 Photovoltaic device 失效
标题翻译：光伏装置
公开(公告)号：US06184456B2
公开(公告)日：2001-02-06
申请号：US08985312
申请日：1997-12-04
申请人： Jinsho Matsuyama , Koichi Matsuda
发明人： Jinsho Matsuyama , Koichi Matsuda
IPC分类号： H01L3100
CPC分类号： H01L31/0368 , H01L31/056 , Y02E10/52
摘要： A photovoltaic device of the present invention has a non-single-crystal semiconductor. A layer underlying the non-single-crystal semiconductor has a polycrystalline structure. Individual grains of the polycrystal exposed in the surface of the underlying layer have smooth surfaces. The surface of the underlying layer has a step along the grain boundaries of the polycrystal, or a protrusion or recess at the grain boundaries. Alternatively, polycrystal grains having rough surfaces and polycrystal grains having smooth surfaces commonly exist in the surface of the polycrystalline layer. The polycrystalline layer may be a substrate of the photovoltaic device. The present invention, by virtue of the use of such a polycrystalline layer, provides a highly reliable and efficient thin-film photovoltaic device which enhances light absorption by the semiconductor layer and which can be produced at a high yield even at a practically adoptable low cost, while eliminating deficiencies of known arts in regard to workability, yield and durability.
摘要翻译：本发明的光电器件具有非单晶半导体。非单晶半导体的下面的层具有多晶结构。暴露在下层的表面的多晶体的单个晶粒具有平滑的表面。下层的表面沿着多晶体的晶界或在晶界处的突起或凹陷具有台阶。或者，具有粗糙表面的多晶粒和具有平滑表面的多晶粒通常存在于多晶层的表面中。多晶层可以是光伏器件的衬底。本发明通过使用这种多晶层，提供了高度可靠且高效的薄膜光伏器件，其增强了半导体层的光吸收，并且即使在实际可采用的低成本下也可以以高产率生产同时消除已知艺术在可加工性，产量和耐久性方面的缺陷。

7. 发明授权

US6106689A Process for forming zinc oxide film and processes for producing semiconductor device substrate and photo-electricity generating device using the film 失效
标题翻译：用于形成氧化锌膜的方法和使用该膜的半导体器件基板和光电发生器件的制造方法
公开(公告)号：US6106689A
公开(公告)日：2000-08-22
申请号：US9738
申请日：1998-01-20
申请人： Jinsho Matsuyama
发明人： Jinsho Matsuyama
IPC分类号： C23C18/52 , C25D5/10 , C25D9/08 , H01L31/0236 , H01L31/076 , H01L31/18 , H01L31/20 , C25D9/00 , B05D1/18 , B05D3/12 , C25D5/34 , C23D28/00
CPC分类号： H01L31/076 , C23C18/52 , C25D5/10 , C25D9/08 , H01L31/02363 , H01L31/1824 , H01L31/1884 , H01L31/202 , H01L31/204 , H01L31/206 , Y02E10/545 , Y02E10/548 , Y02P70/521
摘要： A process for forming a zinc oxide film including immersing an electroconductive substrate having a surface including a plurality of linear projections in an aqueous solution containing at least nitrate ions and zinc ions to form a zinc oxide film on the electroconductive substrate by a liquid-phase deposition. The plurality of linear projections may preferably provide an uneven surface which has a center-line average surface roughness Ra(X) of 15-300 nm when scanned in a direction parallel to the linear projections, a center line average surface roughness Ra(Y) of 20-600 nm when scanned in a direction perpendicular to the linear projections, and an Ra(X)/Ra(Y) ratio of at most 0.8. The thus formed zinc oxide film is provided with an uneven surface suitable for an optical-confinement layer of a photo-electricity generating device excellent in photoelectric performances.
摘要翻译：一种形成氧化锌膜的方法，包括将含有多个线性突起的表面的导电基材浸渍在至少含有硝酸根离子和锌离子的水溶液中，以通过液相沉积在导电性基体上形成氧化锌膜。多个线状突起可以优选地提供一种不平坦表面，其在平行于线状突起的方向扫描时具有15-300nm的中心线平均表面粗糙度Ra（X），中心线平均表面粗糙度Ra（Y）在垂直于线状突起的方向扫描时为20〜600nm，Ra（X）/ Ra（Y）比为0.8以下。这样形成的氧化锌膜具有适合光电性能优异的光电发生装置的光限制层的不平坦表面。

8. 发明授权

US5913986A Photovoltaic element having a specific doped layer 失效
标题翻译：具有特定掺杂层的光电元件
公开(公告)号：US5913986A
公开(公告)日：1999-06-22
申请号：US933353
申请日：1997-09-19
申请人： Jinsho Matsuyama
发明人： Jinsho Matsuyama
IPC分类号： H01L31/0216 , H01L31/028 , H01L31/0288 , H01L31/0368 , H01L31/0376 , H01L31/075 , H01L31/20
CPC分类号： H01L31/075 , H01L31/0368 , H01L31/20 , Y02E10/548
摘要： A photovoltaic element having a semiconductor junction structure, characterized in that said semiconductor junction structure has a doped layer of p-type or n-type composed of a non-single crystalline material containing one or more elements belonging to group IV of the periodic table as a principal constituent thereof, and said doped layer contains a plurality of regions each comprising a diminished density region of said group IV element as the principal constituent of the doped layer such that said group IV element diminished density regions are intermittently distributed in the doped layer. Said semiconductor junction structure has a substantially intrinsic semiconductor layer at least of which being composed of a microcrystalline semiconductor material.
摘要翻译：一种具有半导体结结构的光电元件，其特征在于，所述半导体结结构具有由属于周期表第Ⅳ族的一种或多种元素的非单晶材料构成的p型或n型掺杂层，并且所述掺杂层包含多个区域，每个区域包括作为掺杂层的主要成分的所述IV族元素的减小的密度区域，使得所述IV族元素减少的密度区域间断地分布在掺杂层中。所述半导体结结构具有至少由微晶半导体材料构成的本质上的半导体层。

9. 发明授权

US5656098A Photovoltaic conversion device and method for producing same 失效
标题翻译：光伏转换装置及其制造方法
公开(公告)号：US5656098A
公开(公告)日：1997-08-12
申请号：US456403
申请日：1995-06-01
申请人： Nobuyuki Ishikawa , Keishi Saito , Soichiro Kawakami , Jinsho Matsuyama , Toshimitsu Kariya , Yuzo Kouda , Naoto Okada
发明人： Nobuyuki Ishikawa , Keishi Saito , Soichiro Kawakami , Jinsho Matsuyama , Toshimitsu Kariya , Yuzo Kouda , Naoto Okada
IPC分类号： H01L31/0216 , H01L31/048 , H01L31/052 , H01L31/075 , H01L31/04 , H01L31/18
CPC分类号： H01L31/073 , H01L31/02167 , H01L31/048 , H01L31/056 , H01L31/075 , H01L31/076 , Y02E10/52 , Y02E10/543 , Y02E10/548
摘要： A photovoltaic device has a semiconductor layer; electrodes and a surface protection layer adjacent to the light incident side. Granules of a material different from those of the surface protection layer are disposed in the surface protection layer. The granules in the surface protection layer have an average grain size of 0.001-20 microns, a surface density S from 0.2 to 0.9 and/or a density per volume from 0.001 to 0.5.To produce a surface protecting layer for a photovoltaic device in which the surface protecting layer has granules at a light incident side the surface of a photovoltaic device is painted with a liquid resin containing the granules.
摘要翻译：光电器件具有半导体层; 电极和与光入射侧相邻的表面保护层。与表面保护层不同的材料颗粒设置在表面保护层中。表面保护层中的颗粒的平均粒度为0.001-20微米，表面密度S为0.2至0.9，和/或每体积密度为0.001至0.5。为了制造其中表面保护层在光入射侧具有颗粒的光伏器件的表面保护层，光伏器件的表面被涂有含有颗粒的液体树脂。

10. 发明授权

US5520740A Process for continuously forming a large area functional deposited film by microwave PCVD method and apparatus suitable for practicing the same 失效
标题翻译：通过微波PCVD方法连续形成大面积功能沉积膜的方法和适用于其的设备的方法
公开(公告)号：US5520740A
公开(公告)日：1996-05-28
申请号：US459485
申请日：1995-06-02
申请人： Masahiro Kanai , Jinsho Matsuyama , Katsumi Nakagawa , Toshimitsu Kariya , Yasushi Fujioka , Tetsuya Takei , Hiroshi Echizen
发明人： Masahiro Kanai , Jinsho Matsuyama , Katsumi Nakagawa , Toshimitsu Kariya , Yasushi Fujioka , Tetsuya Takei , Hiroshi Echizen
IPC分类号： C23C16/50 , C23C16/54 , H01J37/32 , H01L31/076 , H01L31/20 , C23C16/00
CPC分类号： H01L31/076 , C23C16/50 , C23C16/545 , H01J37/32192 , H01J37/3222 , H01J37/3277 , H01L31/206 , H01J2237/3325 , Y02E10/548 , Y02P70/521
摘要： A method for continuously forming a large area functional deposited film by a microwave plasma CVD process, said method comprises: continuously moving a substrate web in the longitudinal direction; establishing a substantially enclosed film-forming chamber having a film-forming space by curving and projecting said moving substrate web to form a columnar portion to be the circumferential wall of said film forming chamber on the way moving; introducing a film-forming raw material gas through a gas feed means into said film-forming space; at the same time, radiating or propagating microwave energy into said film-forming space by using a microwave applicator means capable of radiating or propagating said microwave energy with a directivity in one direction of microwave energy to propagate to generate microwave plasma in said film-forming space, whereby continuously forming a functional deposited film on the inner face of said continuously moving circumferential wall to be exposed to said microwave plasma.An apparatus suitable for practicing said method.
摘要翻译：一种通过微波等离子体CVD工艺连续地形成大面积功能性沉积膜的方法，所述方法包括：在纵向方向上连续地移动衬底腹板; 通过弯曲和突出所述移动的基材卷材来形成具有成膜空间的基本封闭的膜形成室，以在移动的路上形成作为所述成膜室的周壁的柱状部分; 将成膜原料气体通过气体供给装置引入所述成膜空间中; 同时，通过使用能够以微波能量的一个方向上的方向性辐射或传播所述微波能量的微波施加装置将微波能量辐射或传播到所述成膜空间中以在所述成膜中产生微波等离子体从而在所述连续移动的周壁的内表面上连续地形成功能沉积膜以暴露于所述微波等离子体。适用于实施所述方法的装置。

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