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1. 发明授权

US07932513B2 Magnetic random access memory, and write method and manufacturing method of the same 有权
标题翻译：磁性随机存取存储器及其写入方法和制造方法相同
公开(公告)号：US07932513B2
公开(公告)日：2011-04-26
申请号：US12043617
申请日：2008-03-06
申请人： Keiji Hosotani , Yoshiaki Asao , Toshihiko Nagase
发明人： Keiji Hosotani , Yoshiaki Asao , Toshihiko Nagase
IPC分类号： H01L29/06 , H01L29/08 , H01L39/00
CPC分类号： G11C11/16 , B82Y10/00 , G11C11/1675 , H01L27/22 , H01L27/228 , H01L43/08
摘要： A magnetic random access memory includes a bit line running in a first direction, a first word line running in a second direction different from the first direction, and a memory element having a magnetoresistive effect element including a fixed layer having a fixed magnetization direction, a recording layer having a reversible magnetization direction, and a nonmagnetic layer formed between the fixed layer and the recording layer, the magnetization directions in the fixed layer and the recording layer being perpendicular to a film surface, and a heater layer in contact with the magnetoresistive effect element, the memory element being connected to the bit line, and formed to oppose a side surface of the first word line such that the memory element is insulated from the first word line.
摘要翻译：磁性随机存取存储器包括沿第一方向运行的位线，沿与第一方向不同的第二方向运行的第一字线，以及具有包括具有固定磁化方向的固定层的磁阻效应元件的存储元件，具有可逆磁化方向的记录层和形成在固定层和记录层之间的非磁性层，固定层和记录层中的磁化方向垂直于膜表面，以及与磁阻效应接触的加热器层所述存储元件连接到所述位线，并形成为与所述第一字线的侧表面相对，使得所述存储元件与所述第一字线绝缘。

2. 发明申请

US20080225577A1 MAGNETIC RANDOM ACCESS MEMORY, AND WRITE METHOD AND MANUFACTURING METHOD OF THE SAME 有权
标题翻译：磁性随机存取存储器及其制造方法及其制造方法
公开(公告)号：US20080225577A1
公开(公告)日：2008-09-18
申请号：US12043617
申请日：2008-03-06
申请人： Keiji HOSOTANI , Yoshiaki Asao , Toshihiko Nagase
发明人： Keiji HOSOTANI , Yoshiaki Asao , Toshihiko Nagase
IPC分类号： G11C11/02 , H01L29/82 , H01L21/00 , G11C7/00
CPC分类号： G11C11/16 , B82Y10/00 , G11C11/1675 , H01L27/22 , H01L27/228 , H01L43/08
摘要： A magnetic random access memory includes a bit line running in a first direction, a first word line running in a second direction different from the first direction, and a memory element having a magnetoresistive effect element including a fixed layer having a fixed magnetization direction, a recording layer having a reversible magnetization direction, and a nonmagnetic layer formed between the fixed layer and the recording layer, the magnetization directions in the fixed layer and the recording layer being perpendicular to a film surface, and a heater layer in contact with the magnetoresistive effect element, the memory element being connected to the bit line, and formed to oppose a side surface of the first word line such that the memory element is insulated from the first word line.
摘要翻译：磁性随机存取存储器包括沿第一方向运行的位线，沿与第一方向不同的第二方向运行的第一字线，以及具有包括具有固定磁化方向的固定层的磁阻效应元件的存储元件，具有可逆磁化方向的记录层和形成在固定层和记录层之间的非磁性层，固定层和记录层中的磁化方向垂直于膜表面，以及与磁阻效应接触的加热器层所述存储元件连接到所述位线，并形成为与所述第一字线的侧表面相对，使得所述存储元件与所述第一字线绝缘。

3. 发明授权

US07505306B2 Magnetic memory device 有权
标题翻译：磁存储器件
公开(公告)号：US07505306B2
公开(公告)日：2009-03-17
申请号：US11609487
申请日：2006-12-12
申请人： Yoshiaki Fukuzumi , Toshihiko Nagase , Yoshiaki Asao
发明人： Yoshiaki Fukuzumi , Toshihiko Nagase , Yoshiaki Asao
IPC分类号： G11C11/00
CPC分类号： G11C11/16
摘要： A magnetic memory device includes a magnetization fixed layer provided above a semiconductor substrate surface and having a fixed magnetization direction. A first magnetization free layer is provided above the magnetization fixed layer, has variable magnetization direction, and has an easy magnetization axis extending along a plane intersecting the substrate surface and along a direction neither parallel nor perpendicular to the substrate surface. A second magnetization free layer is provided above the first magnetization free layer, has a magnetization that antiferromagnetically couples with the first magnetization free layer. A first write line is placed above and electrically connected to the second magnetization free layer, and extends in a direction that pierces the plane. A second write line faces the first and/or second magnetization free layer, and extends along the substrate surface and the plane and in a direction perpendicular to the first write line.
摘要翻译：磁存储器件包括设置在半导体衬底表面上方并且具有固定的磁化方向的磁化固定层。第一磁化自由层设置在磁化固定层的上方，具有可变的磁化方向，并且具有沿着与衬底表面相交的平面并且沿着不平行或垂直于衬底表面的方向延伸的易磁化轴。第二磁化自由层设置在第一磁化自由层的上方，具有与第一磁化自由层反铁磁耦合的磁化。第一写入线被放置在第二磁化自由层的上方并且电连接到第二写入线，并且沿着穿透该平面的方向延伸。第二写入线面向第一和/或第二磁化自由层，并且沿着衬底表面和平面以及垂直于第一写入线的方向延伸。

4. 发明申请

US20080002459A1 MAGNETIC MEMORY DEVICE 有权
标题翻译：磁记忆装置
公开(公告)号：US20080002459A1
公开(公告)日：2008-01-03
申请号：US11609487
申请日：2006-12-12
申请人： Yoshiaki FUKUZUMI , Toshihiko Nagase , Yoshiaki Asao
发明人： Yoshiaki FUKUZUMI , Toshihiko Nagase , Yoshiaki Asao
IPC分类号： G11C11/00 , G11C11/24
CPC分类号： G11C11/16
摘要： A magnetic memory device includes a magnetization fixed layer provided above a semiconductor substrate surface and having a fixed magnetization direction. A first magnetization free layer is provided above the magnetization fixed layer, has variable magnetization direction, and has an easy magnetization axis extending along a plane intersecting the substrate surface and along a direction neither parallel nor perpendicular to the substrate surface. A second magnetization free layer is provided above the first magnetization free layer, has a magnetization that antiferromagnetically couples with the first magnetization free layer. A first write line is placed above and electrically connected to the second magnetization free layer, and extends in a direction that pierces the plane. A second write line faces the first and/or second magnetization free layer, and extends along the substrate surface and the plane and in a direction perpendicular to the first write line.
摘要翻译：磁存储器件包括设置在半导体衬底表面上方并且具有固定的磁化方向的磁化固定层。第一磁化自由层设置在磁化固定层的上方，具有可变的磁化方向，并且具有沿着与衬底表面相交的平面并且沿着不平行或垂直于衬底表面的方向延伸的易磁化轴。第二磁化自由层设置在第一磁化自由层的上方，具有与第一磁化自由层反铁磁耦合的磁化。第一写入线被放置在第二磁化自由层的上方并且电连接到第二写入线，并且沿着穿透该平面的方向延伸。第二写入线面向第一和/或第二磁化自由层，并且沿着衬底表面和平面以及垂直于第一写入线的方向延伸。

5. 发明授权

US09269890B2 Magnetoresistance effect element with shift canceling layer having pattern area greater than that of storage layer 有权
标题翻译：磁阻效应元件具有移位消除层，其图案面积大于存储层的图案面积
公开(公告)号：US09269890B2
公开(公告)日：2016-02-23
申请号：US14014210
申请日：2013-08-29
申请人： Masahiko Nakayama , Toshihiko Nagase , Tadashi Kai , Youngmin Eeh , Koji Ueda , Yutaka Hashimoto , Daisuke Watanabe , Kazuya Sawada
发明人： Masahiko Nakayama , Toshihiko Nagase , Tadashi Kai , Youngmin Eeh , Koji Ueda , Yutaka Hashimoto , Daisuke Watanabe , Kazuya Sawada
IPC分类号： H01L29/82 , H01L43/08 , H01F10/32 , H01F41/32
CPC分类号： H01L43/08 , H01F10/3254 , H01F10/3259 , H01F41/325
摘要： According to one embodiment, a magnetoresistance effect element includes a reference layer, a shift canceling layer, a storage layer provided between the reference layer and the shift canceling layer, a tunnel barrier layer provided between the reference layer and the storage layer, and a spacer layer provided between the shift canceling layer and the storage layer, wherein a pattern of the storage layer is provided inside a pattern of the shift canceling layer when the patterns of the storage layer and the shift canceling layer are viewed from a direction perpendicular to the patterns of the storage layer and the shift canceling layer.
摘要翻译：根据一个实施例，磁阻效应元件包括参考层，移位消除层，设置在参考层和移位消除层之间的存储层，设置在参考层和存储层之间的隧道势垒层，以及间隔物设置在移位消除层和存储层之间的层，其中当从垂直于图案的方向观察存储层和移位消除层的图案时，存储层的图案设置在移位消除层的图案内部的存储层和移位消除层。

6. 发明授权

US09236563B2 Magnetic memory device and method of manufacturing the magnetic memory device 有权
标题翻译：磁存储器件及其制造方法
公开(公告)号：US09236563B2
公开(公告)日：2016-01-12
申请号：US14200894
申请日：2014-03-07
申请人： Yutaka Hashimoto , Tadashi Kai , Masahiko Nakayama , Hiroaki Yoda , Toshihiko Nagase , Masatoshi Yoshikawa , Yasuyuki Sonoda
发明人： Yutaka Hashimoto , Tadashi Kai , Masahiko Nakayama , Hiroaki Yoda , Toshihiko Nagase , Masatoshi Yoshikawa , Yasuyuki Sonoda
IPC分类号： G11C11/16 , H01L43/12 , H01L43/08
CPC分类号： H01L43/12 , G11C11/161 , H01L43/08
摘要： According to one embodiment, a magnetic memory device includes a magnetoresistance effect element having a structure in which a first magnetic layer, a nonmagnetic layer, a second magnetic layer, and a third magnetic layer are stacked, wherein the third magnetic layer comprises a first region and a plurality of second regions, and each of the second regions is surrounded by the first region, has conductivity, and has a greater magnetic property than the first region.
摘要翻译：根据一个实施例，磁存储器件包括具有其中堆叠第一磁性层，非磁性层，第二磁性层和第三磁性层的结构的磁阻效应元件，其中第三磁性层包括第一区域和多个第二区域，并且每个第二区域被第一区域包围，具有导电性，并且具有比第一区域更大的磁特性。

7. 发明授权

US09178137B2 Magnetoresistive element and magnetic memory 有权
标题翻译：磁阻元件和磁记忆体
公开(公告)号：US09178137B2
公开(公告)日：2015-11-03
申请号：US13963682
申请日：2013-08-09
申请人： Youngmin Eeh , Katsuya Nishiyama , Daisuke Ikeno , Toshihiko Nagase , Tadashi Kai , Daisuke Watanabe
发明人： Youngmin Eeh , Katsuya Nishiyama , Daisuke Ikeno , Toshihiko Nagase , Tadashi Kai , Daisuke Watanabe
IPC分类号： H01L43/08 , H01L43/12 , H01L27/22
CPC分类号： H01L43/12 , H01L27/226 , H01L43/08
摘要： A magnetoresistive element includes first and magnetic layers, first and second non-magnetic layers and a W layer. Each of the first and second magnetic layers includes an axis of easy magnetization in a direction perpendicular to a film plane. The first magnetic layer has a variable magnetization direction. The second magnetic layer has an invariable magnetization direction. The first non-magnetic layer is provided between the first and second magnetic layers. The second non-magnetic layer is arranged on a surface of the first magnetic layer opposite to a surface on which the first non-magnetic layer is arranged and contains MgO. The W layer is arranged on a surface of the second non-magnetic layer opposite to a surface on which the first magnetic layer is arranged, and is in contact with the surface of the second non-magnetic layer.
摘要翻译：磁阻元件包括第一和第二磁性层，第一和第二非磁性层以及W层。第一和第二磁性层中的每一个包括在垂直于膜平面的方向上易磁化的轴。第一磁性层具有可变的磁化方向。第二磁性层具有不变的磁化方向。第一非磁性层设置在第一和第二磁性层之间。第二非磁性层布置在第一磁性层的与布置第一非磁性层的表面相对的表面上并且包含MgO。 W层布置在第二非磁性层的与布置第一磁性层的表面相对的表面上，并与第二非磁性层的表面接触。

8. 发明授权

US08995181B2 Magnetoresistive element 有权
标题翻译：磁阻元件
公开(公告)号：US08995181B2
公开(公告)日：2015-03-31
申请号：US13963654
申请日：2013-08-09
申请人： Daisuke Watanabe , Youngmin Eeh , Kazuya Sawada , Koji Ueda , Toshihiko Nagase
发明人： Daisuke Watanabe , Youngmin Eeh , Kazuya Sawada , Koji Ueda , Toshihiko Nagase
IPC分类号： G11C11/00 , G11C11/16 , H01L43/02
CPC分类号： H01L43/10 , G11C11/161 , H01L27/222 , H01L43/02 , H01L43/08
摘要： According to one embodiment, a magnetoresistive element comprises a storage layer having perpendicular magnetic anisotropy with respect to a film plane and having a variable direction of magnetization, a reference layer having perpendicular magnetic anisotropy with respect to the film plane and having an invariable direction of magnetization, a tunnel barrier layer formed between the storage layer and the reference layer and containing O, and an underlayer formed on a side of the storage layer opposite to the tunnel barrier layer. The reference layer comprises a first reference layer formed on the tunnel barrier layer side and a second reference layer formed opposite the tunnel barrier layer. The second reference layer has a higher standard electrode potential than the underlayer.
摘要翻译：根据一个实施例，磁阻元件包括相对于膜平面具有垂直磁各向异性且具有可变磁化方向的存储层，具有相对于膜平面具有垂直磁各向异性且具有不变的磁化方向的参考层形成在存储层和参考层之间并且包含O的隧道势垒层，以及形成在与隧道势垒层相对的存储层侧的底层。参考层包括形成在隧道势垒层侧的第一参考层和与隧道势垒层相对形成的第二参考层。第二参考层具有比底层更高的标准电极电位。

9. 发明授权

US08895162B2 Magnetoresistive element and magnetic memory 有权
标题翻译：磁阻元件和磁记忆体
公开(公告)号：US08895162B2
公开(公告)日：2014-11-25
申请号：US13236028
申请日：2011-09-19
申请人： Katsuya Nishiyama , Shigemi Mizukami , Terunobu Miyazaki , Hiroaki Yoda , Tadashi Kai , Tatsuya Kishi , Daisuke Watanabe , Mikihiko Oogane , Yasuo Ando , Masatoshi Yoshikawa , Toshihiko Nagase , Eiji Kitagawa , Tadaomi Daibou , Makoto Nagamine , Chunlan Feng
发明人： Katsuya Nishiyama , Wu Feng , Shigemi Mizukami , Terunobu Miyazaki , Hiroaki Yoda , Tadashi Kai , Tatsuya Kishi , Daisuke Watanabe , Mikihiko Oogane , Yasuo Ando , Masatoshi Yoshikawa , Toshihiko Nagase , Eiji Kitagawa , Tadaomi Daibou , Makoto Nagamine
IPC分类号： G01R33/09 , H01L43/08 , H01F10/32 , H01L43/10 , H01F10/193 , G11C11/16 , H01L27/22 , B82Y25/00 , H01F10/28
CPC分类号： H01L27/228 , B82Y25/00 , G01R33/09 , G11C11/16 , G11C11/161 , H01F10/123 , H01F10/1933 , H01F10/1936 , H01F10/28 , H01F10/3254 , H01F10/3272 , H01F10/3286 , H01F10/329 , H01L43/08 , H01L43/10 , Y10T428/1121 , Y10T428/1143
摘要： A magnetoresistive element according to an embodiment includes: a base layer; a first magnetic layer formed on the base layer and having a changeable magnetization direction with an easy axis of magnetization in a direction perpendicular to a film plane; a first nonmagnetic layer formed on the first magnetic layer; and a second magnetic layer formed on the first nonmagnetic layer and having a fixed magnetization layer with an easy axis of magnetization in a direction perpendicular to the film plane. The first magnetic layer includes a ferrimagnetic layer having a DO22 structure or an L10 structure, the ferrimagnetic layer has a c-axis oriented in a direction perpendicular to the film plane, and the magnetization direction of the first magnetic layer is changeable by a current flowing through the first magnetic layer, the first nonmagnetic layer, and the second magnetic layer.
摘要翻译：根据实施例的磁阻元件包括：基底层; 第一磁性层，形成在所述基底层上，并且具有在垂直于膜平面的方向上具有容易的磁化轴的可变磁化方向; 形成在第一磁性层上的第一非磁性层; 以及形成在第一非磁性层上并且具有在垂直于膜平面的方向上具有易磁化轴的固定磁化层的第二磁性层。第一磁性层包括具有DO22结构或L10结构的铁氧体层，所述铁氧体层具有在垂直于所述膜平面的方向上取向的c轴，并且所述第一磁性层的磁化方向可以由电流流过通过第一磁性层，第一非磁性层和第二磁性层。

10. 发明授权

US08705269B2 Magnetoresistive element and magnetic memory 有权
标题翻译：磁阻元件和磁记忆体
公开(公告)号：US08705269B2
公开(公告)日：2014-04-22
申请号：US13232782
申请日：2011-09-14
申请人： Toshihiko Nagase , Tadashi Kai , Makoto Nagamine , Katsuya Nishiyama , Eiji Kitagawa , Tadaomi Daibou , Koji Ueda , Hiroaki Yoda , Kay Yakushiji , Shinji Yuasa , Hitoshi Kubota , Taro Nagahama , Akio Fukushima , Koji Ando
发明人： Toshihiko Nagase , Tadashi Kai , Makoto Nagamine , Katsuya Nishiyama , Eiji Kitagawa , Tadaomi Daibou , Koji Ueda , Hiroaki Yoda , Kay Yakushiji , Shinji Yuasa , Hitoshi Kubota , Taro Nagahama , Akio Fukushima , Koji Ando
IPC分类号： G11C11/16
CPC分类号： H01L27/228 , G11C11/161 , H01L43/08 , H01L43/10
摘要： A magnetoresistive element according to an embodiment includes: a first and second magnetic layers having an easy axis of magnetization in a direction perpendicular to a film plane; and a first nonmagnetic layer interposed between the first and second magnetic layers, at least one of the first and second magnetic layers including a structure formed by stacking a first and second magnetic films, the second magnetic film being located closer to the first nonmagnetic layer, the second magnetic film including a structure formed by repeating stacking of a magnetic material layer and a nonmagnetic material layer at least twice, the nonmagnetic material layers of the second magnetic film containing at least one element selected from the group consisting of Ta, W, Hf, Zr, Nb, Mo, Ti, V, and Cr, one of the first and second magnetic layers having a magnetization direction that is changed by applying a current.
摘要翻译：根据实施例的磁阻元件包括：在垂直于膜平面的方向上具有易磁化轴的第一和第二磁性层; 以及介于所述第一和第二磁性层之间的第一非磁性层，所述第一和第二磁性层中的至少一个包括通过堆叠第一和第二磁性膜形成的结构，所述第二磁性膜位于更靠近所述第一非磁性层的位置，所述第二磁性膜包括通过将磁性材料层和非磁性材料层重复堆叠至少两次形成的结构，所述第二磁性膜的非磁性材料层含有选自Ta，W，Hf中的至少一种元素，Zr，Nb，Mo，Ti，V和Cr中的一种，所述第一和第二磁性层之一具有通过施加电流而改变的磁化方向。

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