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1. 发明申请

US20080225577A1 MAGNETIC RANDOM ACCESS MEMORY, AND WRITE METHOD AND MANUFACTURING METHOD OF THE SAME 有权
标题翻译：磁性随机存取存储器及其制造方法及其制造方法
公开(公告)号：US20080225577A1
公开(公告)日：2008-09-18
申请号：US12043617
申请日：2008-03-06
申请人： Keiji HOSOTANI , Yoshiaki Asao , Toshihiko Nagase
发明人： Keiji HOSOTANI , Yoshiaki Asao , Toshihiko Nagase
IPC分类号： G11C11/02 , H01L29/82 , H01L21/00 , G11C7/00
CPC分类号： G11C11/16 , B82Y10/00 , G11C11/1675 , H01L27/22 , H01L27/228 , H01L43/08
摘要： A magnetic random access memory includes a bit line running in a first direction, a first word line running in a second direction different from the first direction, and a memory element having a magnetoresistive effect element including a fixed layer having a fixed magnetization direction, a recording layer having a reversible magnetization direction, and a nonmagnetic layer formed between the fixed layer and the recording layer, the magnetization directions in the fixed layer and the recording layer being perpendicular to a film surface, and a heater layer in contact with the magnetoresistive effect element, the memory element being connected to the bit line, and formed to oppose a side surface of the first word line such that the memory element is insulated from the first word line.
摘要翻译：磁性随机存取存储器包括沿第一方向运行的位线，沿与第一方向不同的第二方向运行的第一字线，以及具有包括具有固定磁化方向的固定层的磁阻效应元件的存储元件，具有可逆磁化方向的记录层和形成在固定层和记录层之间的非磁性层，固定层和记录层中的磁化方向垂直于膜表面，以及与磁阻效应接触的加热器层所述存储元件连接到所述位线，并形成为与所述第一字线的侧表面相对，使得所述存储元件与所述第一字线绝缘。

2. 发明授权

US07932513B2 Magnetic random access memory, and write method and manufacturing method of the same 有权
标题翻译：磁性随机存取存储器及其写入方法和制造方法相同
公开(公告)号：US07932513B2
公开(公告)日：2011-04-26
申请号：US12043617
申请日：2008-03-06
申请人： Keiji Hosotani , Yoshiaki Asao , Toshihiko Nagase
发明人： Keiji Hosotani , Yoshiaki Asao , Toshihiko Nagase
IPC分类号： H01L29/06 , H01L29/08 , H01L39/00
CPC分类号： G11C11/16 , B82Y10/00 , G11C11/1675 , H01L27/22 , H01L27/228 , H01L43/08
摘要： A magnetic random access memory includes a bit line running in a first direction, a first word line running in a second direction different from the first direction, and a memory element having a magnetoresistive effect element including a fixed layer having a fixed magnetization direction, a recording layer having a reversible magnetization direction, and a nonmagnetic layer formed between the fixed layer and the recording layer, the magnetization directions in the fixed layer and the recording layer being perpendicular to a film surface, and a heater layer in contact with the magnetoresistive effect element, the memory element being connected to the bit line, and formed to oppose a side surface of the first word line such that the memory element is insulated from the first word line.
摘要翻译：磁性随机存取存储器包括沿第一方向运行的位线，沿与第一方向不同的第二方向运行的第一字线，以及具有包括具有固定磁化方向的固定层的磁阻效应元件的存储元件，具有可逆磁化方向的记录层和形成在固定层和记录层之间的非磁性层，固定层和记录层中的磁化方向垂直于膜表面，以及与磁阻效应接触的加热器层所述存储元件连接到所述位线，并形成为与所述第一字线的侧表面相对，使得所述存储元件与所述第一字线绝缘。

3. 发明授权

US07920412B2 Magnetic random access memory and method of manufacturing the same 有权
标题翻译：磁性随机存取存储器及其制造方法
公开(公告)号：US07920412B2
公开(公告)日：2011-04-05
申请号：US12605072
申请日：2009-10-23
申请人： Keiji Hosotani , Yoshiaki Asao , Akihiro Nitayama
发明人： Keiji Hosotani , Yoshiaki Asao , Akihiro Nitayama
IPC分类号： G11C11/00
CPC分类号： H01L27/228 , G11C11/1657 , G11C11/1659 , G11C11/1673 , G11C11/1675
摘要： A magnetic random access memory includes a first wiring, a second wiring formed above and spaced apart from the first wiring, a magnetoresistive effect element formed between the first wiring and the second wiring, formed in contact with an upper surface of the first wiring, and having a fixed layer, a recording layer, and a nonmagnetic layer formed between the fixed layer and the recording layer, a metal layer formed on the magnetoresistive effect element and integrated with the magnetoresistive effect element to form stacked layers, a first side insulating film formed on side surfaces of the metal layer, the magnetoresistive effect element, and the first wiring, a first contact formed in contact with a side surface of the first side insulating film, and a third wiring formed on the metal layer and the first contact to electrically connect the magnetoresistive effect element and the first contact.
摘要翻译：磁性随机存取存储器包括第一布线，形成在第一布线上方并与第一布线间隔开的第二布线;形成在与第一布线的上表面接触形成的第一布线和第二布线之间的磁阻效应元件，以及具有形成在固定层和记录层之间的固定层，记录层和非磁性层，形成在磁阻效应元件上并与磁阻效应元件集成以形成堆叠层的金属层，形成第一侧绝缘膜在金属层的侧表面，磁阻效应元件和第一布线，与第一侧绝缘膜的侧表面接触形成的第一触点和形成在金属层上的第三布线和第一触点电连接连接磁阻效应元件和第一触点。

4. 发明申请

US20080151608A1 SEMICONDUCTOR MEMORY DEVICE AND WRITE AND READ METHODS OF THE SAME 失效
标题翻译：半导体存储器件及其写入和读取方法
公开(公告)号：US20080151608A1
公开(公告)日：2008-06-26
申请号：US11959897
申请日：2007-12-19
申请人： Keiji HOSOTANI , Yoshiaki Asao
发明人： Keiji HOSOTANI , Yoshiaki Asao
IPC分类号： G11C11/00
CPC分类号： G11C11/16 , G11C11/1675 , G11C2213/75 , Y10S977/935
摘要： A semiconductor memory device includes first to fourth resistance change elements sequentially arranged apart from each other in a first direction, a first electrode which connects one terminals of the first and second resistance change elements, a second electrode which connects one terminals of the third and fourth resistance change elements, a bit line which connects the other terminals of the second and third resistance change elements, first to fourth word lines respectively paired with the first to fourth resistance change elements, arranged apart from the first and second electrodes, and running in a second direction, a first current source which supplies a first electric current to a chain structure, when writing data in a selected element, and a second current source which supplies a second electric current to a selected word line which corresponds to the selected element, when writing the data in the selected element.
摘要翻译：一种半导体存储器件，包括：沿第一方向相互顺序排列的第一至第四电阻变化元件;连接第一和第二电阻变化元件的一个端子的第一电极;连接第三和第四电极的一个端子的第二电极; 电阻变化元件，连接第二和第三电阻变化元件的其他端子的位线，与第一和第四电阻变化元件分别配对的第一至第四字线与第一和第二电极分开配置，并且以第二方向，当将数据写入所选择的元件时，将第一电流提供给链结构的第一电流源和向对应于所选择的元件的所选择的字线提供第二电流的第二电流源，在所选元素中写入数据。

5. 发明授权

US06879515B2 Magnetic memory device having yoke layer 有权
标题翻译：具有轭层的磁存储器件
公开(公告)号：US06879515B2
公开(公告)日：2005-04-12
申请号：US10926047
申请日：2004-08-26
申请人： Hiroaki Yoda , Yoshiaki Asao , Tomomasa Ueda , Minoru Amano , Tatsuya Kishi , Keiji Hosotani , Junichi Miyamoto
发明人： Hiroaki Yoda , Yoshiaki Asao , Tomomasa Ueda , Minoru Amano , Tatsuya Kishi , Keiji Hosotani , Junichi Miyamoto
IPC分类号： G11C11/15 , G11C11/00 , G11C11/16 , H01L21/00 , H01L21/8246 , H01L27/00 , H01L27/105 , H01L27/22 , H01L29/82 , H01L43/00 , H01L43/08
CPC分类号： G11C11/16 , B82Y10/00 , H01L27/228 , H01L43/08
摘要： A magnetic memory device includes first wiring which runs in the first direction, second wiring which runs in the second direction, a magneto-resistance element which is arranged at an intersection between the first and second wirings, a first yoke main body which covers at least either of the lower surface and two side surfaces of the first wring, a second yoke main body which covers at least either of the upper surface and two side surfaces of the second wiring, first and second yoke tips which are arranged on two sides of the magneto-resistance element in the first direction at an interval from the magneto-resistance element, and third and fourth yoke tips which are arranged on two sides of the magneto-resistance element in the second direction at an interval from the magneto-resistance element.
摘要翻译：磁存储装置包括沿第一方向延伸的第一布线，沿第二方向延伸的第二布线，布置在第一布线和第二布线之间的交叉点处的磁阻元件，至少覆盖第一布线第一绕线的下表面和两个侧表面中的任一个，覆盖第二布线的上表面和两个侧表面中的至少一个的第二轭主体，布置在第二布线的两侧上的第一和第二轭尖磁阻元件以与磁阻元件间隔的方式在第一方向上，以及第三和第四磁轭尖端，其在与磁阻元件间隔开的第二方向上布置在磁阻元件的两侧。

6. 发明授权

US07727778B2 Magnetoresistive element and method of manufacturing the same 有权
标题翻译：磁阻元件及其制造方法
公开(公告)号：US07727778B2
公开(公告)日：2010-06-01
申请号：US12200181
申请日：2008-08-28
申请人： Masayoshi Iwayama , Keiji Hosotani , Takeshi Kajiyama , Yoshiaki Asao
发明人： Masayoshi Iwayama , Keiji Hosotani , Takeshi Kajiyama , Yoshiaki Asao
IPC分类号： H01L21/00
CPC分类号： H01F10/3263 , B82Y25/00 , B82Y40/00 , G01R33/093 , G11C11/161 , H01F41/302 , H01L43/08 , H01L43/12
摘要： A magnetoresistive element includes a stack formed by sequentially stacking a first fixed layer in which a magnetization direction is fixed, a first nonmagnetic layer, a free layer in which a magnetization direction is changeable, a second nonmagnetic layer, and a second fixed layer in which a magnetization direction is fixed, a first circumferential wall provided on the second nonmagnetic layer in contact with a circumferential surface of the second fixed layer to surround the second fixed layer, and made of an insulator, and a second circumferential wall provided on the first nonmagnetic layer in contact with a circumferential surface of the free layer to surround the free layer, and made of an insulator.
摘要翻译：磁阻元件包括通过顺序层叠其中固定有磁化方向的第一固定层，第一非磁性层，磁化方向可变的自由层，第二非磁性层和第二固定层而形成的叠层，其中磁化方向是固定的，设置在第二非磁性层上的与第二固定层的圆周表面接触以围绕第二固定层并由绝缘体制成的第一周向壁和设置在第一非磁性层上的第二周向壁层与自由层的周向表面接触以包围自由层，并由绝缘体制成。

7. 发明申请

US20100053823A1 MAGNETORESISTIVE ELEMENT AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：磁性元件及其制造方法
公开(公告)号：US20100053823A1
公开(公告)日：2010-03-04
申请号：US12200181
申请日：2008-08-28
申请人： Masayoshi Iwayama , Keiji Hosotani , Takeshi Kajiyama , Yoshiaki Asao
发明人： Masayoshi Iwayama , Keiji Hosotani , Takeshi Kajiyama , Yoshiaki Asao
IPC分类号： G11B5/33
CPC分类号： H01F10/3263 , B82Y25/00 , B82Y40/00 , G01R33/093 , G11C11/161 , H01F41/302 , H01L43/08 , H01L43/12
摘要： A magnetoresistive element includes a stack formed by sequentially stacking a first fixed layer in which a magnetization direction is fixed, a first nonmagnetic layer, a free layer in which a magnetization direction is changeable, a second nonmagnetic layer, and a second fixed layer in which a magnetization direction is fixed, a first circumferential wall provided on the second nonmagnetic layer in contact with a circumferential surface of the second fixed layer to surround the second fixed layer, and made of an insulator, and a second circumferential wall provided on the first nonmagnetic layer in contact with a circumferential surface of the free layer to surround the free layer, and made of an insulator.
摘要翻译：磁阻元件包括通过顺序层叠其中固定有磁化方向的第一固定层，第一非磁性层，磁化方向可变的自由层，第二非磁性层和第二固定层而形成的叠层，其中磁化方向是固定的，设置在第二非磁性层上的与第二固定层的圆周表面接触以围绕第二固定层并由绝缘体制成的第一周向壁和设置在第一非磁性层上的第二周向壁层与自由层的周向表面接触以包围自由层，并由绝缘体制成。

8. 发明申请

US20050274984A1 Semiconductor integrated circuit device and method of manufacturing the same 审中-公开
公开(公告)号：US20050274984A1
公开(公告)日：2005-12-15
申请号：US11152411
申请日：2005-06-15
申请人： Keiji Hosotani , Yoshiaki Asao , Yoshiaki Saito , Minoru Amano , Shigeki Takahashi , Tatsuya Kishi , Yoshihisa Iwata
发明人： Keiji Hosotani , Yoshiaki Asao , Yoshiaki Saito , Minoru Amano , Shigeki Takahashi , Tatsuya Kishi , Yoshihisa Iwata
IPC分类号： H01L27/105 , H01L21/768 , H01L21/8246 , H01L27/22 , H01L43/08 , H01L27/10
CPC分类号： H01L27/228 , B82Y10/00 , H01L21/76895 , H01L43/08
摘要： A semiconductor integrated circuit device includes a cell transistor; a bit line provided above the cell transistor; a magnetoresistive element provided above the bit line, a first end portion of the magnetoresistive element being electrically connected to the bit line; an intracell local interconnection provided above the magnetoresistive element, the intracell local interconnection coupling one of source and drain regions of the cell transistor to a second end portion of the magnetoresistive element; and a write word line provided above the intracell local interconnection, a portion between the write word line and the intracell local interconnection being filled with an insulator alone.

9. 发明授权

US06795334B2 Magnetic random access memory 失效
标题翻译：磁性随机存取存储器
公开(公告)号：US06795334B2
公开(公告)日：2004-09-21
申请号：US10180024
申请日：2002-06-27
申请人： Yoshihisa Iwata , Yoshiaki Asao , Keiji Hosotani , Junichi Miyamoto
发明人： Yoshihisa Iwata , Yoshiaki Asao , Keiji Hosotani , Junichi Miyamoto
IPC分类号： G11C1100
CPC分类号： G11C11/16 , G11C11/5607
摘要： A read blocks are connected to a read bit line. The read block has MTJ elements connected in series or in parallel, or arranged by combining series and parallel connections between the read bit line and a ground terminal. The MTJ elements are stacked on a semiconductor substrate. The read bit line is arranged on the MTJ elements stacked. A write word line extending in the X-direction and a write bit line extending in the Y-direction are present near the MTJ elements in the read block.
摘要翻译：一个读块连接到读位线。读块具有串联或并联连接的MTJ元件，或通过组合读位线与接地端之间的串联和并联连接进行排列。 MTJ元件堆叠在半导体衬底上。读取位线被布置在堆叠的MTJ元件上。在读取块中的MTJ元素附近存在沿X方向延伸的写字线和在Y方向上延伸的写位线。

10. 发明授权

US07919826B2 Magnetoresistive element and manufacturing method thereof 有权
标题翻译：磁阻元件及其制造方法
公开(公告)号：US07919826B2
公开(公告)日：2011-04-05
申请号：US12108093
申请日：2008-04-23
申请人： Masayoshi Iwayama , Yoshiaki Asao , Takeshi Kajiyama , Keiji Hosotani
发明人： Masayoshi Iwayama , Yoshiaki Asao , Takeshi Kajiyama , Keiji Hosotani
IPC分类号： H01L21/00
CPC分类号： H01L43/08 , H01L27/222 , H01L43/12
摘要： A magnetoresistive element includes a first stacked structure formed by sequentially stacking a first fixed layer in which a magnetization direction is fixed and a first nonmagnetic layer, a second stacked structure formed on the first stacked structure by sequentially stacking a free layer in which a magnetization direction is changeable, a second nonmagnetic layer, and a second fixed layer in which a magnetization direction is fixed, and a circumferential wall formed in contact with a circumferential surface of the second stacked structure to surround the second stacked structure, and made of an insulator. A circumferential surface of the first stacked structure is substantially perpendicular. The second stacked structure has a tapered shape which narrows upward.
摘要翻译：磁阻元件包括通过顺序层叠形成磁化方向的第一固定层和第一非磁性层的第一堆叠结构而形成的第一堆叠结构，通过顺序堆叠在第一层叠结构上形成的第二堆叠结构，其中磁化方向可变化的第二非磁性层和固定有磁化方向的第二固定层，以及与第二堆叠结构的周向表面接触以围绕第二堆叠结构并由绝缘体制成的周壁。第一堆叠结构的圆周表面基本垂直。第二堆叠结构具有向上变窄的锥形形状。

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