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1. 发明授权

US07505306B2 Magnetic memory device 有权
标题翻译：磁存储器件
公开(公告)号：US07505306B2
公开(公告)日：2009-03-17
申请号：US11609487
申请日：2006-12-12
申请人： Yoshiaki Fukuzumi , Toshihiko Nagase , Yoshiaki Asao
发明人： Yoshiaki Fukuzumi , Toshihiko Nagase , Yoshiaki Asao
IPC分类号： G11C11/00
CPC分类号： G11C11/16
摘要： A magnetic memory device includes a magnetization fixed layer provided above a semiconductor substrate surface and having a fixed magnetization direction. A first magnetization free layer is provided above the magnetization fixed layer, has variable magnetization direction, and has an easy magnetization axis extending along a plane intersecting the substrate surface and along a direction neither parallel nor perpendicular to the substrate surface. A second magnetization free layer is provided above the first magnetization free layer, has a magnetization that antiferromagnetically couples with the first magnetization free layer. A first write line is placed above and electrically connected to the second magnetization free layer, and extends in a direction that pierces the plane. A second write line faces the first and/or second magnetization free layer, and extends along the substrate surface and the plane and in a direction perpendicular to the first write line.
摘要翻译：磁存储器件包括设置在半导体衬底表面上方并且具有固定的磁化方向的磁化固定层。第一磁化自由层设置在磁化固定层的上方，具有可变的磁化方向，并且具有沿着与衬底表面相交的平面并且沿着不平行或垂直于衬底表面的方向延伸的易磁化轴。第二磁化自由层设置在第一磁化自由层的上方，具有与第一磁化自由层反铁磁耦合的磁化。第一写入线被放置在第二磁化自由层的上方并且电连接到第二写入线，并且沿着穿透该平面的方向延伸。第二写入线面向第一和/或第二磁化自由层，并且沿着衬底表面和平面以及垂直于第一写入线的方向延伸。

2. 发明申请

US20080002459A1 MAGNETIC MEMORY DEVICE 有权
标题翻译：磁记忆装置
公开(公告)号：US20080002459A1
公开(公告)日：2008-01-03
申请号：US11609487
申请日：2006-12-12
申请人： Yoshiaki FUKUZUMI , Toshihiko Nagase , Yoshiaki Asao
发明人： Yoshiaki FUKUZUMI , Toshihiko Nagase , Yoshiaki Asao
IPC分类号： G11C11/00 , G11C11/24
CPC分类号： G11C11/16
摘要： A magnetic memory device includes a magnetization fixed layer provided above a semiconductor substrate surface and having a fixed magnetization direction. A first magnetization free layer is provided above the magnetization fixed layer, has variable magnetization direction, and has an easy magnetization axis extending along a plane intersecting the substrate surface and along a direction neither parallel nor perpendicular to the substrate surface. A second magnetization free layer is provided above the first magnetization free layer, has a magnetization that antiferromagnetically couples with the first magnetization free layer. A first write line is placed above and electrically connected to the second magnetization free layer, and extends in a direction that pierces the plane. A second write line faces the first and/or second magnetization free layer, and extends along the substrate surface and the plane and in a direction perpendicular to the first write line.
摘要翻译：磁存储器件包括设置在半导体衬底表面上方并且具有固定的磁化方向的磁化固定层。第一磁化自由层设置在磁化固定层的上方，具有可变的磁化方向，并且具有沿着与衬底表面相交的平面并且沿着不平行或垂直于衬底表面的方向延伸的易磁化轴。第二磁化自由层设置在第一磁化自由层的上方，具有与第一磁化自由层反铁磁耦合的磁化。第一写入线被放置在第二磁化自由层的上方并且电连接到第二写入线，并且沿着穿透该平面的方向延伸。第二写入线面向第一和/或第二磁化自由层，并且沿着衬底表面和平面以及垂直于第一写入线的方向延伸。

3. 发明授权

US07459759B2 Magnetic random access memory 失效
标题翻译：磁性随机存取存储器
公开(公告)号：US07459759B2
公开(公告)日：2008-12-02
申请号：US11447131
申请日：2006-06-06
申请人： Yoshiaki Fukuzumi , Toshihiko Nagase
发明人： Yoshiaki Fukuzumi , Toshihiko Nagase
IPC分类号： G11C11/02
CPC分类号： G11C11/15 , G11C11/5607
摘要： A magnetic random access memory described in embodiments of the present invention comprises a conductive line, a soft magnetic material which surrounds the conductive line, a gap disposed in a part of the soft magnetic material, and a magneto-resistive element in which a part of a vertical magnetization film as a magnetic free layer is positioned in the gap and in which a vertical magnetization film as a magnetic pinned layer is positioned outside the gap.
摘要翻译：在本发明的实施例中描述的磁性随机存取存储器包括导线，围绕导电线的软磁材料，设置在软磁材料的一部分中的间隙，以及磁阻元件，其中一部分作为磁性自由层的垂直磁化膜位于间隙中，并且其中作为磁性固定层的垂直磁化膜位于间隙外部。

4. 发明授权

US06972992B1 Tunneling magnetoresistive random access memory with a multilayer fixed layer 失效
标题翻译：具有多层固定层的隧道磁阻随机存取存储器
公开(公告)号：US06972992B1
公开(公告)日：2005-12-06
申请号：US11000995
申请日：2004-12-02
申请人： Yoshiaki Fukuzumi , Toshihiko Nagase
发明人： Yoshiaki Fukuzumi , Toshihiko Nagase
IPC分类号： G11C11/15 , H01F10/32 , H01L43/08
CPC分类号： B82Y25/00 , G11C11/15 , H01F10/3272 , H01L43/08
摘要： A magnetic random access memory includes a magnetoresistive element which has a recording layer, a fixed layer, and a tunnel barrier layer arranged between the recording layer and the fixed layer, the fixed layer comprising an anti-ferromagnetic layer, a first ferromagnetic layer which is in contact with the anti-ferromagnetic layer, a second ferromagnetic layer which is magnetically coupled with the first ferromagnetic layer by first magnetic coupling, a third ferromagnetic layer which is magnetically coupled with the second ferromagnetic layer by second magnetic coupling, a first nonmagnetic layer which is formed between the first and second ferromagnetic layers, and a second nonmagnetic layer which is formed between the second and third ferromagnetic layers and has a thickness different from a thickness of the first nonmagnetic layer.
摘要翻译：磁性随机存取存储器包括具有记录层，固定层和布置在记录层和固定层之间的隧道势垒层的磁阻元件，该固定层包括反铁磁性层，第一铁磁层与所述反铁磁层接触的第二铁磁层，通过第一磁耦合与所述第一铁磁层磁耦合的第三铁磁层，通过第二磁耦合与所述第二铁磁层磁耦合的第三铁磁层，第一非磁性层，形成在第一和第二铁磁层之间，第二非磁性层形成在第二和第三铁磁层之间，并且具有不同于第一非磁性层的厚度的厚度。

5. 发明申请

US20090140358A1 MAGNETORESISTIVE ELEMENT 有权
标题翻译：磁电元件
公开(公告)号：US20090140358A1
公开(公告)日：2009-06-04
申请号：US12364132
申请日：2009-02-02
申请人： Masahiko Nakayama , Tadashi Kai , Tatsuya Kishi , Yoshiaki Fukuzumi , Toshihiko Nagase , Sumio Ikegawa , Hiroaki Yoda
发明人： Masahiko Nakayama , Tadashi Kai , Tatsuya Kishi , Yoshiaki Fukuzumi , Toshihiko Nagase , Sumio Ikegawa , Hiroaki Yoda
IPC分类号： H01L43/08
CPC分类号： H01L43/08 , G11C11/161 , G11C11/1657 , G11C11/1659 , G11C11/1673 , G11C11/1675 , Y10T428/1121
摘要： A magnetoresistive element includes a first ferromagnetic layer having a first magnetization, the first magnetization having a first pattern when the magnetoresistive element is half-selected during a first data write, a second pattern when the magnetoresistive element is selected during a second data write, and a third pattern of residual magnetization, the first pattern being different from the second and third pattern, a second ferromagnetic layer having a second magnetization, and a nonmagnetic layer arranged between the first ferromagnetic layer and the second ferromagnetic layer and having a tunnel conductance changing dependent on a relative angle between the first magnetization and the second magnetization.
摘要翻译：磁阻元件包括具有第一磁化的第一铁磁层，当在第一数据写入期间磁阻元件被半选择时，第一磁化具有第一图案，当在第二数据写入期间选择磁阻元件时的第二图案;以及剩余磁化的第三图案，第一图案不同于第二和第三图案，具有第二磁化的第二铁磁层，以及布置在第一铁磁层和第二铁磁层之间并且具有隧道电导变化依赖性的非磁性层在第一磁化和第二磁化之间的相对角度上。

6. 发明申请

US20080241598A1 MAGNETIC RANDOM ACCESS MEMORY HAVING MAGNETORESISTIVE ELEMENT WITH NONMAGNETIC METAL LAYER 审中-公开
标题翻译：具有非金属金属层的磁性元件的磁性随机存取存储器
公开(公告)号：US20080241598A1
公开(公告)日：2008-10-02
申请号：US12111571
申请日：2008-04-29
申请人： Yoshiaki Fukuzumi , Toshihiko Nagase
发明人： Yoshiaki Fukuzumi , Toshihiko Nagase
IPC分类号： G11B5/66
CPC分类号： H01L27/224 , H01L27/228 , H01L43/08
摘要： A magnetic random access memory in which a plurality of magnetoresistive elements are laid out in an array, the magnetoresistive element includes a lower ferromagnetic layer, an upper ferromagnetic layer which has a planar shape smaller than a planar shape of the lower ferromagnetic layer, a first nonmagnetic insulating layer which is formed between the lower ferromagnetic layer and the upper ferromagnetic layer, and a first nonmagnetic metal layer which is formed between the first nonmagnetic insulating layer and the upper ferromagnetic layer.
摘要翻译：一种磁性随机存取存储器，其中多个磁阻元件以阵列布置，磁阻元件包括下铁磁层，具有小于下铁磁层的平面形状的平面形状的上铁磁层，第一形成在下铁磁层和上铁磁层之间的非磁性绝缘层，以及形成在第一非磁性绝缘层和上铁磁层之间的第一非磁性金属层。

7. 发明申请

US20080131732A1 MAGNETORESISTIVE ELEMENT 有权
标题翻译：磁电元件
公开(公告)号：US20080131732A1
公开(公告)日：2008-06-05
申请号：US12019743
申请日：2008-01-25
申请人： Masahiko NAKAYAMA , Tadashi Kai , Tatsuya Kishi , Yoshiaki Fukuzumi , Toshihiko Nagase , Sumio Ikegawa , Hiroaki Yoda
发明人： Masahiko NAKAYAMA , Tadashi Kai , Tatsuya Kishi , Yoshiaki Fukuzumi , Toshihiko Nagase , Sumio Ikegawa , Hiroaki Yoda
IPC分类号： G11B5/39
CPC分类号： H01L43/08 , G11C11/161 , G11C11/1657 , G11C11/1659 , G11C11/1673 , G11C11/1675 , Y10T428/1121
摘要： A magnetoresistive element includes a first ferromagnetic layer having a first magnetization, the first magnetization having a first pattern when the magnetoresistive element is half-selected during a first data write, a second pattern when the magnetoresistive element is selected during a second data write, and a third pattern of residual magnetization, the first pattern being different from the second and third pattern, a second ferromagnetic layer having a second magnetization, and a nonmagnetic layer arranged between the first ferromagnetic layer and the second ferromagnetic layer and having a tunnel conductance changing dependent on a relative angle between the first magnetization and the second magnetization.
摘要翻译：磁阻元件包括具有第一磁化的第一铁磁层，当在第一数据写入期间磁阻元件被半选择时，第一磁化具有第一图案，当在第二数据写入期间选择磁阻元件时的第二图案，以及剩余磁化的第三图案，第一图案不同于第二和第三图案，具有第二磁化的第二铁磁层，以及布置在第一铁磁层和第二铁磁层之间并且具有隧道电导变化依赖性的非磁性层在第一磁化和第二磁化之间的相对角度上。

8. 发明申请

US20060131629A1 Magnetic random access memory having magnetoresistive element with nonmagnetic metal layer 审中-公开
标题翻译：具有具有非磁性金属层的磁阻元件的磁性随机存取存储器
公开(公告)号：US20060131629A1
公开(公告)日：2006-06-22
申请号：US11192020
申请日：2005-07-29
申请人： Yoshiaki Fukuzumi , Toshihiko Nagase
发明人： Yoshiaki Fukuzumi , Toshihiko Nagase
IPC分类号： H01L29/94
CPC分类号： H01L27/224 , H01L27/228 , H01L43/08
摘要： A magnetic random access memory in which a plurality of magnetoresistive elements are laid out in an array, the magnetoresistive element includes a lower ferromagnetic layer, an upper ferromagnetic layer which has a planar shape smaller than a planar shape of the lower ferromagnetic layer, a first nonmagnetic insulating layer which is formed between the lower ferromagnetic layer and the upper ferromagnetic layer, and a first nonmagnetic metal layer which is formed between the first nonmagnetic insulating layer and the upper ferromagnetic layer.
摘要翻译：一种磁性随机存取存储器，其中多个磁阻元件以阵列布置，磁阻元件包括下铁磁层，具有小于下铁磁层的平面形状的平面形状的上铁磁层，第一形成在下铁磁层和上铁磁层之间的非磁性绝缘层，以及形成在第一非磁性绝缘层和上铁磁层之间的第一非磁性金属层。

9. 发明授权

US07518907B2 Magnetoresistive element 有权
标题翻译：磁阻元件
公开(公告)号：US07518907B2
公开(公告)日：2009-04-14
申请号：US12019743
申请日：2008-01-25
申请人： Masahiko Nakayama , Tadashi Kai , Tatsuya Kishi , Yoshiaki Fukuzumi , Toshihiko Nagase , Sumio Ikegawa , Hiroaki Yoda
发明人： Masahiko Nakayama , Tadashi Kai , Tatsuya Kishi , Yoshiaki Fukuzumi , Toshihiko Nagase , Sumio Ikegawa , Hiroaki Yoda
IPC分类号： G11C11/00
CPC分类号： H01L43/08 , G11C11/161 , G11C11/1657 , G11C11/1659 , G11C11/1673 , G11C11/1675 , Y10T428/1121
摘要： A magnetoresistive element includes a first ferromagnetic layer having a first magnetization, the first magnetization having a first pattern when the magnetoresistive element is half-selected during a first data write, a second pattern when the magnetoresistive element is selected during a second data write, and a third pattern of residual magnetization, the first pattern being different from the second and third pattern, a second ferromagnetic layer having a second magnetization, and a nonmagnetic layer arranged between the first ferromagnetic layer and the second ferromagnetic layer and having a tunnel conductance changing dependent on a relative angle between the first magnetization and the second magnetization.
摘要翻译：磁阻元件包括具有第一磁化的第一铁磁层，当在第一数据写入期间磁阻元件被半选择时，第一磁化具有第一图案，当在第二数据写入期间选择磁阻元件时的第二图案;以及剩余磁化的第三图案，第一图案不同于第二和第三图案，具有第二磁化的第二铁磁层，以及布置在第一铁磁层和第二铁磁层之间并且具有隧道电导变化依赖性的非磁性层在第一磁化和第二磁化之间的相对角度上。

10. 发明申请

US20060274568A1 Magnetic random access memory 失效
标题翻译：磁性随机存取存储器
公开(公告)号：US20060274568A1
公开(公告)日：2006-12-07
申请号：US11447131
申请日：2006-06-06
申请人： Yoshiaki Fukuzumi , Toshihiko Nagase
发明人： Yoshiaki Fukuzumi , Toshihiko Nagase
IPC分类号： G11C11/24
CPC分类号： G11C11/15 , G11C11/5607
摘要： A magnetic random access memory described in embodiments of the present invention comprises a conductive line, a soft magnetic material which surrounds the conductive line, a gap disposed in a part of the soft magnetic material, and a magneto-resistive element in which a part of a vertical magnetization film as a magnetic free layer is positioned in the gap and in which a vertical magnetization film as a magnetic pinned layer is positioned outside the gap.
摘要翻译：在本发明的实施例中描述的磁性随机存取存储器包括导线，围绕导电线的软磁材料，设置在软磁材料的一部分中的间隙，以及磁阻元件，其中一部分作为磁性自由层的垂直磁化膜位于间隙中，并且其中作为磁性固定层的垂直磁化膜位于间隙外部。

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