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1. 发明申请

US20080066681A1 Batch-Type Remote Plasma Processing Apparatus 有权
公开(公告)号：US20080066681A1
公开(公告)日：2008-03-20
申请号：US11931585
申请日：2007-10-31
申请人： Kazuyuki Toyoda , Yasuhiro Inokuchi , Motonari Takebayashi , Tadashi Kontani , Nobuo Ishimaru
发明人： Kazuyuki Toyoda , Yasuhiro Inokuchi , Motonari Takebayashi , Tadashi Kontani , Nobuo Ishimaru
IPC分类号： C23C14/00
CPC分类号： H01L21/02274 , C23C16/452 , C23C16/45525 , C23C16/45542 , C23C16/45546 , C23C16/45578 , C23C16/4583 , C23C16/4584 , C23C16/54 , H01J37/32357 , H01J37/3244 , H01J37/32513 , H01J37/32541 , H01J37/32834 , H01J2237/332 , H01L21/02183 , H01L21/02205 , H01L21/02211 , H01L21/205 , H01L21/31604 , H01L21/67109 , H01L21/77
摘要： A plasma processing apparatus comprises a processing chamber in which a plurality of substrates are stacked and accommodated; a pair of electrodes extending in the stacking direction of the plurality of substrates, which are disposed at one side of the plurality of substrates in said processing chamber, and to which high frequency electricity is applied; and a gas supply member which supplies processing gas into a space between the pair of electrodes.

2. 发明授权

US08544411B2 Batch-type remote plasma processing apparatus 有权
公开(公告)号：US08544411B2
公开(公告)日：2013-10-01
申请号：US12390291
申请日：2009-02-20
申请人： Kazuyuki Toyoda , Yasuhiro Inokuchi , Motonari Takebayashi , Tadashi Kontani , Nobuo Ishimaru
发明人： Kazuyuki Toyoda , Yasuhiro Inokuchi , Motonari Takebayashi , Tadashi Kontani , Nobuo Ishimaru
IPC分类号： C23C16/00
CPC分类号： H01L21/02274 , C23C16/452 , C23C16/45525 , C23C16/45542 , C23C16/45546 , C23C16/45578 , C23C16/4583 , C23C16/4584 , C23C16/54 , H01J37/32357 , H01J37/3244 , H01J37/32513 , H01J37/32541 , H01J37/32834 , H01J2237/332 , H01L21/02183 , H01L21/02205 , H01L21/02211 , H01L21/205 , H01L21/31604 , H01L21/67109 , H01L21/77
摘要： A plasma processing apparatus comprises a processing chamber in which a plurality of substrates are stacked and accommodated; a pair of electrodes extending in the stacking direction of the plurality of substrates, which are disposed at one side of the plurality of substrates in said processing chamber, and to which high frequency electricity is applied; and a gas supply member which supplies processing gas into a space between the pair of electrodes.

3. 发明授权

US08020514B2 Batch-type remote plasma processing apparatus 有权
公开(公告)号：US08020514B2
公开(公告)日：2011-09-20
申请号：US12357213
申请日：2009-01-21
申请人： Kazuyuki Toyoda , Yasuhiro Inokuchi , Motonari Takebayashi , Tadashi Kontani , Nobuo Ishimaru
发明人： Kazuyuki Toyoda , Yasuhiro Inokuchi , Motonari Takebayashi , Tadashi Kontani , Nobuo Ishimaru
IPC分类号： C23C16/00 , C23F1/00 , H01L21/306
CPC分类号： H01L21/02274 , C23C16/452 , C23C16/45525 , C23C16/45542 , C23C16/45546 , C23C16/45578 , C23C16/4583 , C23C16/4584 , C23C16/54 , H01J37/32357 , H01J37/3244 , H01J37/32513 , H01J37/32541 , H01J37/32834 , H01J2237/332 , H01L21/02183 , H01L21/02205 , H01L21/02211 , H01L21/205 , H01L21/31604 , H01L21/67109 , H01L21/77
摘要： A plasma processing apparatus comprises a processing chamber in which a plurality of substrates are stacked and accommodated; a pair of electrodes extending in the stacking direction of the plurality of substrates, which are disposed at one side of the plurality of substrates in said processing chamber, and to which high frequency electricity is applied; and a gas supply member which supplies processing gas into a space between the pair of electrodes.

4. 发明授权

US08028652B2 Batch-type remote plasma processing apparatus 有权
标题翻译：批式远程等离子体处理装置
公开(公告)号：US08028652B2
公开(公告)日：2011-10-04
申请号：US11688730
申请日：2007-03-20
申请人： Kazuyuki Toyoda , Yasuhiro Inokuchi , Motonari Takebayashi , Tadashi Kontani , Nobuo Ishimaru
发明人： Kazuyuki Toyoda , Yasuhiro Inokuchi , Motonari Takebayashi , Tadashi Kontani , Nobuo Ishimaru
IPC分类号： C23C16/00 , C23F1/00 , H01L21/306
CPC分类号： H01L21/02274 , C23C16/452 , C23C16/45525 , C23C16/45542 , C23C16/45546 , C23C16/45578 , C23C16/4583 , C23C16/4584 , C23C16/54 , H01J37/32357 , H01J37/3244 , H01J37/32513 , H01J37/32541 , H01J37/32834 , H01J2237/332 , H01L21/02183 , H01L21/02205 , H01L21/02211 , H01L21/205 , H01L21/31604 , H01L21/67109 , H01L21/77
摘要： A plasma processing apparatus comprises a processing chamber in which a plurality of substrates are stacked and accommodated; a pair of electrodes extending in the stacking direction of the plurality of substrates, which are disposed at one side of the plurality of substrates in said processing chamber, and to which high frequency electricity is applied; and a gas supply member which supplies processing gas into a space between the pair of electrodes.
摘要翻译：一种等离子体处理装置，包括堆叠并容纳多个基板的处理室; 一对电极，其沿着所述多个基板的堆叠方向延伸，所述一对电极设置在所述处理室中的所述多个基板的一侧，并施加高频电力; 以及将处理气体供给到一对电极之间的空气的供气构件。

5. 发明授权

US07861668B2 Batch-type remote plasma processing apparatus 有权
公开(公告)号：US07861668B2
公开(公告)日：2011-01-04
申请号：US11931585
申请日：2007-10-31
申请人： Kazuyuki Toyoda , Yasuhiro Inokuchi , Motonari Takebayashi , Tadashi Kontani , Nobuo Ishimaru
发明人： Kazuyuki Toyoda , Yasuhiro Inokuchi , Motonari Takebayashi , Tadashi Kontani , Nobuo Ishimaru
IPC分类号： C23C16/00
CPC分类号： H01L21/02274 , C23C16/452 , C23C16/45525 , C23C16/45542 , C23C16/45546 , C23C16/45578 , C23C16/4583 , C23C16/4584 , C23C16/54 , H01J37/32357 , H01J37/3244 , H01J37/32513 , H01J37/32541 , H01J37/32834 , H01J2237/332 , H01L21/02183 , H01L21/02205 , H01L21/02211 , H01L21/205 , H01L21/31604 , H01L21/67109 , H01L21/77
摘要： A plasma processing apparatus comprises a processing chamber in which a plurality of substrates are stacked and accommodated; a pair of electrodes extending in the stacking direction of the plurality of substrates, which are disposed at one side of the plurality of substrates in said processing chamber, and to which high frequency electricity is applied; and a gas supply member which supplies processing gas into a space between the pair of electrodes.

6. 发明授权

US08652258B2 Substrate treatment device 有权
标题翻译：底物处理装置
公开(公告)号：US08652258B2
公开(公告)日：2014-02-18
申请号：US13067117
申请日：2011-05-10
申请人： Takashi Yokogawa , Yasuhiro Inokuchi , Katsuhiko Yamamoto , Yoshiaki Hashiba , Yasuhiro Ogawa
发明人： Takashi Yokogawa , Yasuhiro Inokuchi , Katsuhiko Yamamoto , Yoshiaki Hashiba , Yasuhiro Ogawa
IPC分类号： C23C16/00 , C23C16/455 , C23C16/46 , C23C16/52 , H01L21/306
CPC分类号： C23C16/24 , C23C16/22 , C30B25/08 , C30B25/14 , C30B29/06 , C30B35/00
摘要： It is intended to provide a substrate treatment device capable of adjusting both of a growth speed and an etching speed in a selective epitaxial growth, avoiding particle generation from nozzles, and achieving good etching characteristics. A substrate treatment device for selectively growing an epitaxial film on a surface of a substrate by alternately supplying a raw material gas containing silicon and an etching gas to a treatment chamber, the substrate treatment device being provided with a substrate support member for supporting the substrate in the treatment chamber, a heating member provided outside the treatment chamber for heating the substrate and an atmosphere of the treatment chamber, a gas supply system provided inside the treatment chamber, and a discharge port opened on the treatment chamber, wherein the gas supply system comprises first gas supply nozzles for supplying the raw material gas and second gas supply nozzles for supplying the etching gas.
摘要翻译：旨在提供能够在选择性外延生长中调节生长速度和蚀刻速度两者的基板处理装置，从而避免从喷嘴产生颗粒，并获得良好的蚀刻特性。一种基板处理装置，其通过向处理室交替地供给含有硅和蚀刻气体的原料气体来选择性地在基板的表面上生长外延膜，所述基板处理装置设置有用于将基板支撑于基板的基板支撑部件所述处理室，设置在所述处理室的外部用于加热所述基板的加热部件和所述处理室的气氛，设置在所述处理室内部的气体供给系统和在所述处理室上开放的排出口，所述气体供给系统包括：用于供给原料气体的第一气体供给喷嘴和用于供给蚀刻气体的第二气体供给喷嘴。

7. 发明授权

US08071477B2 Method of manufacturing semiconductor device and substrate processing apparatus 有权
标题翻译：制造半导体器件和衬底处理设备的方法
公开(公告)号：US08071477B2
公开(公告)日：2011-12-06
申请号：US12637229
申请日：2009-12-14
申请人： Atsushi Moriya , Tetsuya Marubayashi , Yasuhiro Inokuchi
发明人： Atsushi Moriya , Tetsuya Marubayashi , Yasuhiro Inokuchi
IPC分类号： H01L21/44 , C23C16/00
CPC分类号： C23C16/45578 , C23C16/24 , C23C16/4401
摘要： Formation of a boron compound is suppressed on the inner wall of a nozzle disposed in a high-temperature region of a process chamber. A semiconductor device manufacturing method comprises forming a boron doped silicon film by simultaneously supplying at least a boron-containing gas as a constituent element and a chlorine-containing gas a constituent element to a gas supply nozzle installed in a process chamber in a manner that concentration of chlorine (Cl) is higher than concentration of boron in the gas supply nozzle.
摘要翻译：在配置在处理室的高温区域的喷嘴的内壁上抑制了硼化合物的形成。一种半导体器件的制造方法，其特征在于，通过将至少含有作为构成元素的含硼气体和构成元素的含氯气体同时供给到安装在处理室内的气体供给喷嘴，以浓度的氯（Cl）高于气体供给喷嘴中的硼浓度。

8. 发明授权

US06503079B2 Substrate processing apparatus and method for manufacturing semiconductor device 有权
公开(公告)号：US06503079B2
公开(公告)日：2003-01-07
申请号：US10041617
申请日：2002-01-10
申请人： Minoru Kogano , Yasuhiro Inokuchi , Makoto Sambu , Atsushi Moriya , Yasuo Kunii
发明人： Minoru Kogano , Yasuhiro Inokuchi , Makoto Sambu , Atsushi Moriya , Yasuo Kunii
IPC分类号： F27D312
CPC分类号： C23C16/45519 , C23C16/4401 , C23C16/4409 , C23C16/4412 , C30B25/14
摘要： An apparatus and a method for manufacturing a semiconductor device can provide a good quality film growth in a highly clean reaction atmosphere unaffected by contamination from a furnace opening portion. A reverse-diffusion preventing body 8 is provided between a furnace opening flange 7 and a boat susceptor 19 so that a substrate processing space 20 is isolated from a furnace opening portion space 21 to thereby prevent reverse-diffusion of a contaminant which occurs at a furnace opening portion B, to the substrate processing space 20. At a furnace opening flange 7, a furnace opening exhausting tube 15 is provided which constitutes a furnace opening system for exhausting the space 21 independently of the space 20 so that the space 21 is exhausted while being purged by supplying a purge gas into the space 21, to thereby remove a contaminant from the space 21. A gas supplying nozzle 4 which is introduced from the flange 7 is extended from the space 21 to the space 20 so that a reaction gas is directly introduced into the space 20 to thereby prevent a contaminant Within the space 21 from being involved in the space 20.

9. 发明授权

US08025739B2 Method of manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US08025739B2
公开(公告)日：2011-09-27
申请号：US12571706
申请日：2009-10-01
申请人： Kiyohisa Ishibashi , Yasuhiro Inokuchi , Atsushi Moriya , Yoshiaki Hashiba
发明人： Kiyohisa Ishibashi , Yasuhiro Inokuchi , Atsushi Moriya , Yoshiaki Hashiba
IPC分类号： B08B7/02
CPC分类号： C23C16/4405 , Y10S438/905
摘要： In a dry cleaning process, breakage of a gas supply pipe can be prevented, and maintenance efficiency can be increased. There is provided a method of manufacturing a semiconductor device, comprising: (a) loading a substrate into a process chamber; (b) forming a silicon film or a silicon compound film on the substrate loaded in the process chamber by supplying a raw-material gas to a gas supply pipe disposed in the process chamber to introduce the raw-material gas into the process chamber; (c) unloading the substrate from the process chamber; (d) heating an inside of the process chamber after unloading the substrate to generate a crack in a thin film formed inside the process chamber; (e) decreasing an inside temperature of the process chamber after carrying out the step (d) with the substrate unloaded from the process chamber; and (f) introducing a cleaning gas into the process chamber by supplying the cleaning gas to the gas supply pipe after the step (e) with the substrate unloaded from the process chamber.
摘要翻译：在干洗过程中，可以防止气体供给管的破损，并且可以提高维护效率。提供一种制造半导体器件的方法，包括：（a）将衬底装载到处理室中; （b）通过向设置在处理室中的气体供给管供给原料气体，将原料气体引入处理室，在装载在处理室中的基板上形成硅膜或硅化合物膜; （c）从处理室卸载基板; （d）在卸载基板之后加热处理室的内部，以在处理室内形成的薄膜产生裂纹; （e）在从所述处理室卸载的所述基板进行步骤（d）之后降低所述处理室的内部温度; 以及（f）通过在步骤（e）之后通过从处理室卸载基板将清洁气体供给到气体供给管，将清洁气体引入处理室。

10. 发明申请

US20090104740A1 Semiconductor device producing method 有权
标题翻译：半导体器件制造方法
公开(公告)号：US20090104740A1
公开(公告)日：2009-04-23
申请号：US11921562
申请日：2006-07-25
申请人： Yasuhiro Inokuchi , Astushi Moriya , Kastusuhiko Yamamoto , Yoshiaki Hashiba , Takashi Yokogawa
发明人： Yasuhiro Inokuchi , Astushi Moriya , Kastusuhiko Yamamoto , Yoshiaki Hashiba , Takashi Yokogawa
IPC分类号： H01L21/8232
CPC分类号： C23C16/45523 , C23C16/24 , C30B25/02 , C30B29/06 , H01L21/02381 , H01L21/02532 , H01L21/0262 , H01L21/02636
摘要： Disclosed is a producing method of a semiconductor device, including: loading a silicon substrate into a processing chamber, the silicon substrate having a silicon nitride film or a silicon oxide film on at least a portion of a surface thereof and a silicon surface being exposed from the surface; and alternately repeating a first introducing at least a silane-compound gas into the processing chamber and a second introducing at least etching gas a plurality of times to selectively grow an epitaxial film on the silicon surface, wherein the alternate repeating is started with the second introducing prior to the first introducing.
摘要翻译：公开了一种半导体器件的制造方法，包括：将硅衬底装载到处理室中，所述硅衬底在其表面的至少一部分上具有氮化硅膜或氧化硅膜，并且硅表面暴露于表面并且交替地重复首先将至少一种硅烷化合物气体引入到所述处理室中，以及第二次引入至少蚀刻气体多次以在所述硅表面上选择性地生长外延膜，其中所述交替重复开始于所述第二引入在第一次介绍之前。

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