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1. 发明授权

US08025739B2 Method of manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US08025739B2
公开(公告)日：2011-09-27
申请号：US12571706
申请日：2009-10-01
申请人： Kiyohisa Ishibashi , Yasuhiro Inokuchi , Atsushi Moriya , Yoshiaki Hashiba
发明人： Kiyohisa Ishibashi , Yasuhiro Inokuchi , Atsushi Moriya , Yoshiaki Hashiba
IPC分类号： B08B7/02
CPC分类号： C23C16/4405 , Y10S438/905
摘要： In a dry cleaning process, breakage of a gas supply pipe can be prevented, and maintenance efficiency can be increased. There is provided a method of manufacturing a semiconductor device, comprising: (a) loading a substrate into a process chamber; (b) forming a silicon film or a silicon compound film on the substrate loaded in the process chamber by supplying a raw-material gas to a gas supply pipe disposed in the process chamber to introduce the raw-material gas into the process chamber; (c) unloading the substrate from the process chamber; (d) heating an inside of the process chamber after unloading the substrate to generate a crack in a thin film formed inside the process chamber; (e) decreasing an inside temperature of the process chamber after carrying out the step (d) with the substrate unloaded from the process chamber; and (f) introducing a cleaning gas into the process chamber by supplying the cleaning gas to the gas supply pipe after the step (e) with the substrate unloaded from the process chamber.
摘要翻译：在干洗过程中，可以防止气体供给管的破损，并且可以提高维护效率。提供一种制造半导体器件的方法，包括：（a）将衬底装载到处理室中; （b）通过向设置在处理室中的气体供给管供给原料气体，将原料气体引入处理室，在装载在处理室中的基板上形成硅膜或硅化合物膜; （c）从处理室卸载基板; （d）在卸载基板之后加热处理室的内部，以在处理室内形成的薄膜产生裂纹; （e）在从所述处理室卸载的所述基板进行步骤（d）之后降低所述处理室的内部温度; 以及（f）通过在步骤（e）之后通过从处理室卸载基板将清洁气体供给到气体供给管，将清洁气体引入处理室。

2. 发明申请

US20100154711A1 SUBSTRATE PROCESSING APPARATUS 审中-公开
标题翻译：基板加工设备
公开(公告)号：US20100154711A1
公开(公告)日：2010-06-24
申请号：US12644318
申请日：2009-12-22
申请人： Kiyohisa ISHIBASHI , Fumihide IKEDA , Masaaki UENO , Takahiro MAEDA , Yasuhiro INOKUCHI , Yasuo KUNII , Hidehiro YANAGAWA
发明人： Kiyohisa ISHIBASHI , Fumihide IKEDA , Masaaki UENO , Takahiro MAEDA , Yasuhiro INOKUCHI , Yasuo KUNII , Hidehiro YANAGAWA
IPC分类号： C23C16/00
CPC分类号： C23C16/4586 , C23C16/45502 , C23C16/45578 , H01L21/67011 , H01L21/67109 , H01L21/67309
摘要： Films are formed on a plurality of substrates through a batch process while preventing formation of films on the rear surfaces of the substrates. For this, a substrate processing apparatus comprises a reaction vessel, supports, a support holder, and an induction heating device. The reaction vessel is configured to process substrates therein. The supports are made of a conductive material and having a disk shape, and each of the supports is configured to accommodate a substrate in its concave part in a state where the substrate is horizontally positioned with a top surface of the substrate being exposed. The concave part is formed concentrically with a circumference of the support, and a difference between radii of the support and the concave part is greater than a distance between neighboring two of the supports held by the support holder. The support holder is configured to hold at least the supports horizontally in multiple stages. The induction heating device is configured to heat at least the supports held by the support holder inside the reaction vessel by using an induction heating method.
摘要翻译：通过间歇工艺在多个基板上形成膜，同时防止在基板的后表面上形成膜。为此，基板处理装置包括反应容器，支撑件，支撑架和感应加热装置。反应容器被配置为在其中处理基板。支撑体由导电材料制成并且具有圆盘形状，并且每个支撑件构造成在基板被暴露的顶表面的水平位置的状态下容纳其凹部中的基板。凹部与支撑体的圆周同心地形成，并且支撑件的半径与凹部之间的差大于由支撑保持器保持的相邻的两个支撑件之间的距离。支撑架被配置成在多个阶段中至少水平地保持支撑件。感应加热装置通过使用感应加热方法，至少将由支撑架保持的支撑体加热到反应容器内部。

3. 发明申请

US20090104740A1 Semiconductor device producing method 有权
标题翻译：半导体器件制造方法
公开(公告)号：US20090104740A1
公开(公告)日：2009-04-23
申请号：US11921562
申请日：2006-07-25
申请人： Yasuhiro Inokuchi , Astushi Moriya , Kastusuhiko Yamamoto , Yoshiaki Hashiba , Takashi Yokogawa
发明人： Yasuhiro Inokuchi , Astushi Moriya , Kastusuhiko Yamamoto , Yoshiaki Hashiba , Takashi Yokogawa
IPC分类号： H01L21/8232
CPC分类号： C23C16/45523 , C23C16/24 , C30B25/02 , C30B29/06 , H01L21/02381 , H01L21/02532 , H01L21/0262 , H01L21/02636
摘要： Disclosed is a producing method of a semiconductor device, including: loading a silicon substrate into a processing chamber, the silicon substrate having a silicon nitride film or a silicon oxide film on at least a portion of a surface thereof and a silicon surface being exposed from the surface; and alternately repeating a first introducing at least a silane-compound gas into the processing chamber and a second introducing at least etching gas a plurality of times to selectively grow an epitaxial film on the silicon surface, wherein the alternate repeating is started with the second introducing prior to the first introducing.
摘要翻译：公开了一种半导体器件的制造方法，包括：将硅衬底装载到处理室中，所述硅衬底在其表面的至少一部分上具有氮化硅膜或氧化硅膜，并且硅表面暴露于表面并且交替地重复首先将至少一种硅烷化合物气体引入到所述处理室中，以及第二次引入至少蚀刻气体多次以在所述硅表面上选择性地生长外延膜，其中所述交替重复开始于所述第二引入在第一次介绍之前。

4. 发明申请

US20080251008A1 Substrate Processing Apparatus and Semiconductor Device Producing Method 失效
标题翻译：基板加工装置及半导体装置生产方法
公开(公告)号：US20080251008A1
公开(公告)日：2008-10-16
申请号：US10592350
申请日：2005-03-11
申请人： Atsushi Moriya , Yasuhiro Inokuchi , Yasuo Kunii
发明人： Atsushi Moriya , Yasuhiro Inokuchi , Yasuo Kunii
IPC分类号： H01L21/205 , H01L21/28 , H01L21/285 , H01L29/417 , H01L29/78
CPC分类号： C23C16/22 , C23C16/04 , C23C16/24 , C23C16/4583 , C30B25/02 , C30B29/06 , H01L21/02381 , H01L21/02532 , H01L21/0262 , H01L21/28525 , H01L21/28562 , H01L29/6659 , H01L29/66628 , H01L29/7834 , Y10T117/10 , Y10T117/1016
摘要： Disclosed is a hot wall type substrate processing apparatus, including a processing chamber which is to accommodate at least one product substrate therein; a heating member which is disposed outside of the processing chamber and which is to heat the product substrate; a processing gas supply system connected to the processing chamber; and an exhaust system, wherein with a member from which a Si film is exposed being disposed such as to be opposed to a surface on which selective growth is to be effected of the product substrate, an epitaxial film including Si is allowed to selectively grow on a Si surface of the product substrate.
摘要翻译：公开了一种热壁型基板处理装置，包括：处理室，其用于容纳至少一个产品基板; 加热构件，其设置在所述处理室的外部并且用于加热所述产品基板; 连接到处理室的处理气体供应系统; 以及排气系统，其中与Si膜暴露的构件配置成与要对产品衬底进行选择性生长的表面相对，允许包括Si的外延膜选择性地生长在产品基板的Si表面。

5. 发明申请

US20080066681A1 Batch-Type Remote Plasma Processing Apparatus 有权
公开(公告)号：US20080066681A1
公开(公告)日：2008-03-20
申请号：US11931585
申请日：2007-10-31
申请人： Kazuyuki Toyoda , Yasuhiro Inokuchi , Motonari Takebayashi , Tadashi Kontani , Nobuo Ishimaru
发明人： Kazuyuki Toyoda , Yasuhiro Inokuchi , Motonari Takebayashi , Tadashi Kontani , Nobuo Ishimaru
IPC分类号： C23C14/00
CPC分类号： H01L21/02274 , C23C16/452 , C23C16/45525 , C23C16/45542 , C23C16/45546 , C23C16/45578 , C23C16/4583 , C23C16/4584 , C23C16/54 , H01J37/32357 , H01J37/3244 , H01J37/32513 , H01J37/32541 , H01J37/32834 , H01J2237/332 , H01L21/02183 , H01L21/02205 , H01L21/02211 , H01L21/205 , H01L21/31604 , H01L21/67109 , H01L21/77
摘要： A plasma processing apparatus comprises a processing chamber in which a plurality of substrates are stacked and accommodated; a pair of electrodes extending in the stacking direction of the plurality of substrates, which are disposed at one side of the plurality of substrates in said processing chamber, and to which high frequency electricity is applied; and a gas supply member which supplies processing gas into a space between the pair of electrodes.

6. 发明授权

US06462411B1 Semiconductor wafer processing apparatus for transferring a wafer mount 有权
标题翻译：用于转印晶片安装座的半导体晶片处理装置
公开(公告)号：US06462411B1
公开(公告)日：2002-10-08
申请号：US09205299
申请日：1998-12-04
申请人： Tomoji Watanabe , Nobuyuki Mise , Toshiyuki Uchino , Norio Suzuki , Yoshihiko Sakurai , Toshiya Uenishi , Yohsuke Inoue , Yasuhiro Inokuchi , Fumihide Ikeda
发明人： Tomoji Watanabe , Nobuyuki Mise , Toshiyuki Uchino , Norio Suzuki , Yoshihiko Sakurai , Toshiya Uenishi , Yohsuke Inoue , Yasuhiro Inokuchi , Fumihide Ikeda
IPC分类号： H01L2334
CPC分类号： H01L21/67748 , H01L21/67109 , H01L21/68735 , H01L21/6875 , H01L21/68785 , Y10T29/41
摘要： A semiconductor wafer processing apparatus comprises a reaction furnace capable of heating inside thereof, a wafer mount for mounting a semiconductor wafer thereon and a transfer device. The wafermount includes an opening which is greater than the semiconductor wafer and which has a circle shape or a shape substantially similar to an outer periphery of the semiconductor wafer, and includes a wafer supporting portion projecting inwardly of the opening for supporting the semiconductor wafer. The transfer device is capable of holding the wafer mount outside the semiconductor wafer as viewed from a vertical direction, and transferring the wafer mount carrying the semiconductor wafer thereon substantially horizontally into and/or out from the reaction furnace.
摘要翻译：半导体晶片处理装置包括能够在其内部加热的反应炉，用于将半导体晶片安装在其上的晶片载体和转印装置。所述瓦台车包括比所述半导体晶片大的开口部，该开口部具有与所述半导体晶片的外周大致相同的圆形或形状，并且具有向所述开口的内侧突出以支撑所述半导体晶片的晶片支撑部。传送装置能够从垂直方向观察时将晶片安装体保持在半导体晶片外部，并将承载半导体晶片的晶片载体基本水平地转移到反应炉内和/或从反应炉出来。

7. 发明申请

US20110226418A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 审中-公开
标题翻译：制造半导体器件的方法
公开(公告)号：US20110226418A1
公开(公告)日：2011-09-22
申请号：US13150277
申请日：2011-06-01
申请人： Kiyohisa ISHIBASHI , Yasuhiro Inokuchi , Atsushi Moriya , Yoshiaki Hashiba
发明人： Kiyohisa ISHIBASHI , Yasuhiro Inokuchi , Atsushi Moriya , Yoshiaki Hashiba
IPC分类号： H01L21/00 , C23F1/08 , C23C16/44 , C23C16/52 , B08B13/00
CPC分类号： C23C16/4405 , Y10S438/905
摘要： In a dry cleaning process, breakage of a gas supply pipe can be prevented, and maintenance efficiency can be increased. There is provided a substrate processing apparatus comprising: a process chamber configured to process a substrate; a heater configured to heat an inside of the process chamber; a gas supply pipe installed in the process chamber; a gas supply system configured to supply at least a cleaning gas to the gas supply pipe to introduce the cleaning gas into the process chamber; and a control unit configured to control the heater and gas supply system with the substrate unloaded from the process chamber to perform heating an inside of the process chamber to generate a crack in a thin film formed inside the process chamber; decreasing an inside temperature of the process chamber after the crack is generated in the thin film; and introducing the cleaning gas into the process chamber by supplying the cleaning gas to the gas supply pipe after the inside temperature of the process chamber is decreased.
摘要翻译：在干洗过程中，可以防止气体供给管的破损，并且可以提高维护效率。提供了一种基板处理装置，包括：处理室，被配置为处理基板; 加热器，其构造成加热所述处理室的内部; 安装在处理室中的气体供给管; 气体供给系统，被配置为至少向所述气体供给管供给清洁气体，以将所述清洁气体引入所述处理室; 以及控制单元，被配置为通过从处理室卸载的基板来控制加热器和气体供给系统，以对处理室的内部进行加热，以在处理室内形成的薄膜产生裂纹; 在薄膜中产生裂纹后降低处理室的内部温度; 并且在处理室的内部温度降低之后，通过向气体供给管供给清洁气体，将清洁气体引入处理室。

8. 发明授权

US08012885B2 Manufacturing method of semiconductor device 有权
标题翻译：半导体器件的制造方法
公开(公告)号：US08012885B2
公开(公告)日：2011-09-06
申请号：US12078527
申请日：2008-04-01
申请人： Yasuhiro Inokuchi , Atsushi Moriya , Yasuhiro Ogawa
发明人： Yasuhiro Inokuchi , Atsushi Moriya , Yasuhiro Ogawa
IPC分类号： H01L21/20
CPC分类号： H01L21/02046 , H01L21/02381 , H01L21/02532 , H01L21/0262 , H01L21/02639 , H01L21/02658
摘要： To provide a manufacturing method of a semiconductor device capable of performing a selective growth at a low temperature. A manufacturing method of a semiconductor device for placing in a processing chamber a substrate having at least a silicon surface and an insulating film surface on a surface; and allowing an epitaxial film to selectively grow only on the silicon surface by using a substrate processing apparatus for heating an atmosphere in the processing chamber and the substrate, using a heating unit disposed outside of the processing chamber, includes a substrate loading step of loading the substrate into the processing chamber; a pre-processing step of supplying dichlorosilane gas and hydrogen gas into the processing chamber while maintaining a temperature in the substrate processing chamber to a prescribed temperature of 700° C. or less, and removing a natural oxide film or impurities formed on the silicon surface; and a substrate unloading step of unloading the substrate to outside of the processing chamber.
摘要翻译：提供能够在低温下进行选择性生长的半导体器件的制造方法。一种半导体器件的制造方法，用于将表面上至少具有硅表面和绝缘膜表面的衬底放置在处理室中; 并且通过使用设置在处理室外部的加热单元，通过使用用于加热处理室和基板中的气氛的基板处理设备，允许外延膜仅在硅表面上选择性地生长，包括：基板加载步骤，衬底进入处理室; 在将处理室内的温度维持在700℃以下的规定温度的同时将二氯硅烷气体和氢气供给到处理室中的预处理步骤，以及去除在硅表面上形成的天然氧化物膜或杂质 ; 以及将基板卸载到处理室外部的基板卸载步骤。

9. 发明申请

US20090253265A1 METHOD FOR FABRICATING SEMICONDUCTOR DEVICE AND SUBSTRATE PROCESSING APPARATUS 审中-公开
标题翻译：用于制造半导体器件和衬底处理装置的方法
公开(公告)号：US20090253265A1
公开(公告)日：2009-10-08
申请号：US12236550
申请日：2008-09-24
申请人： Yasuhiro Inokuchi , Atsushi Moriya
发明人： Yasuhiro Inokuchi , Atsushi Moriya
IPC分类号： H01L21/306
CPC分类号： C23C16/45523 , C23C16/24 , C30B25/14 , C30B25/20 , C30B29/06 , H01L21/02532 , H01L21/0262
摘要： Provided is a method and a substrate processing apparatus for fabricating a semiconductor device by forming a film at a relatively high rate without etching an N+ substrate. In the method, a silicon substrate is loaded into a processing chamber in a first step. In a second step, at least a first silane-based gas and a first etching gas is supplied to the processing chamber while heating the semiconductor substrate. In a third step, at least a second silane-based gas and a second etching gas is supplied to the processing chamber while heating the semiconductor substrate.
摘要翻译：提供了一种通过在不蚀刻N +衬底的情况下以相对高的速率形成膜来制造半导体器件的方法和衬底处理设备。在该方法中，在第一步骤中将硅衬底装载到处理室中。在第二步骤中，在加热半导体衬底的同时，至少将第一硅烷类气体和第一蚀刻气体供给到处理室。在第三步骤中，在加热半导体衬底的同时，至少将第二硅烷类气体和第二蚀刻气体供给到处理室。

10. 发明申请

US20090133630A1 Batch-Type Remote Plasma Processing Apparatus 有权
标题翻译：批式远程等离子体处理装置
公开(公告)号：US20090133630A1
公开(公告)日：2009-05-28
申请号：US12357213
申请日：2009-01-21
申请人： Kazuyuki TOYODA , Yasuhiro INOKUCHI , Motonari TAKEBAYASHI , Tadashi KONTANI , Nobuo ISHIMARU
发明人： Kazuyuki TOYODA , Yasuhiro INOKUCHI , Motonari TAKEBAYASHI , Tadashi KONTANI , Nobuo ISHIMARU
IPC分类号： C23C16/513
CPC分类号： H01L21/02274 , C23C16/452 , C23C16/45525 , C23C16/45542 , C23C16/45546 , C23C16/45578 , C23C16/4583 , C23C16/4584 , C23C16/54 , H01J37/32357 , H01J37/3244 , H01J37/32513 , H01J37/32541 , H01J37/32834 , H01J2237/332 , H01L21/02183 , H01L21/02205 , H01L21/02211 , H01L21/205 , H01L21/31604 , H01L21/67109 , H01L21/77
摘要： A plasma processing apparatus comprises a processing chamber in which a plurality of substrates are stacked and accommodated; a pair of electrodes extending in the stacking direction of the plurality of substrates, which are disposed at one side of the plurality of substrates in said processing chamber, and to which high frequency electricity is applied; and a gas supply member which supplies processing gas into a space between the pair of electrodes.
摘要翻译：一种等离子体处理装置，包括堆叠并容纳多个基板的处理室; 一对电极，其沿着所述多个基板的堆叠方向延伸，所述一对电极设置在所述处理室中的所述多个基板的一侧，并施加高频电力; 以及将处理气体供给到一对电极之间的空气的供气构件。

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