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1. 发明授权

US08071477B2 Method of manufacturing semiconductor device and substrate processing apparatus 有权
标题翻译：制造半导体器件和衬底处理设备的方法
公开(公告)号：US08071477B2
公开(公告)日：2011-12-06
申请号：US12637229
申请日：2009-12-14
申请人： Atsushi Moriya , Tetsuya Marubayashi , Yasuhiro Inokuchi
发明人： Atsushi Moriya , Tetsuya Marubayashi , Yasuhiro Inokuchi
IPC分类号： H01L21/44 , C23C16/00
CPC分类号： C23C16/45578 , C23C16/24 , C23C16/4401
摘要： Formation of a boron compound is suppressed on the inner wall of a nozzle disposed in a high-temperature region of a process chamber. A semiconductor device manufacturing method comprises forming a boron doped silicon film by simultaneously supplying at least a boron-containing gas as a constituent element and a chlorine-containing gas a constituent element to a gas supply nozzle installed in a process chamber in a manner that concentration of chlorine (Cl) is higher than concentration of boron in the gas supply nozzle.
摘要翻译：在配置在处理室的高温区域的喷嘴的内壁上抑制了硼化合物的形成。一种半导体器件的制造方法，其特征在于，通过将至少含有作为构成元素的含硼气体和构成元素的含氯气体同时供给到安装在处理室内的气体供给喷嘴，以浓度的氯（Cl）高于气体供给喷嘴中的硼浓度。

2. 发明授权

US08070880B2 Substrate processing apparatus 有权
标题翻译：基板加工装置
公开(公告)号：US08070880B2
公开(公告)日：2011-12-06
申请号：US12255246
申请日：2008-10-21
申请人： Tetsuya Marubayashi , Yasuhiro Inokuchi
发明人： Tetsuya Marubayashi , Yasuhiro Inokuchi
IPC分类号： C23C16/455 , C23C16/458 , C23C16/46 , C23F1/00 , H01L21/306 , C23C16/06 , C23C16/22
CPC分类号： H01L21/67109 , H01L21/67248
摘要： Provided is a substrate processing apparatus. The substrate processing apparatus includes a reaction tube, a substrate holder, a gas nozzle, a heating unit, a temperature detector, and an exhaust unit. The reaction tube accommodates and processes substrates. The substrate holder holds substrates stacked at predetermined intervals in the reaction tube. The gas nozzle is installed along a stacked direction of the substrates. The heating unit heats the substrates. The temperature detector is installed along the stacked direction of the substrates. The exhaust unit exhausts an inside atmosphere of the reaction tube. Each of the gas nozzle and the temperature detector includes first and second parts and is supported by a narrow tube supporting member including first and second supporting parts. The first supporting part makes contact with the first part. The second supporting part is parallel with the second part and supports the second part.
摘要翻译：提供了一种基板处理装置。基板处理装置包括反应管，基板保持件，气体喷嘴，加热单元，温度检测器和排气单元。反应管容纳和处理基板。衬底保持器保持以预定间隔堆叠在反应管中的衬底。气体喷嘴沿着基板的堆叠方向安装。加热单元加热基板。温度检测器沿着基板的堆叠方向安装。排气单元排出反应管的内部气氛。气体喷嘴和温度检测器中的每一个包括第一和第二部分，并且由包括第一和第二支撑部分的窄管支撑构件支撑。第一部分与第一部分接触。第二支撑部分与第二部分平行并支撑第二部分。

3. 发明申请

US20100058984A1 Substrate Processing Apparatus 审中-公开
标题翻译：基板加工装置
公开(公告)号：US20100058984A1
公开(公告)日：2010-03-11
申请号：US12553143
申请日：2009-09-03
申请人： Tetsuya Marubayashi , Atsushi Moriya
发明人： Tetsuya Marubayashi , Atsushi Moriya
IPC分类号： C23C16/00
CPC分类号： C23C16/24 , C23C16/30 , C23C16/4412 , C30B25/14 , C30B29/06
摘要： Process gas discharged from a bypass pipe to a gas exhaust system can be prevented from diffusing back to the inside of a process chamber without having to install a dedicated vacuum pump at the downstream side of the bypass pipe. The substrate processing apparatus includes a process chamber accommodating a substrate, a gas supply system supplying process gas from a process gas source to the process chamber for processing the substrate, a gas exhaust system configured to exhaust the process chamber, two or more vacuum pumps installed in series at the gas exhaust system, and a bypass pipe connected between the gas supply system and the gas exhaust system. The most upstream one of the vacuum pumps is a mechanical booster pump, and the bypass pipe is connected between the mechanical booster pump and the rest vacuum pumps located at a downstream side of the mechanical booster pump.
摘要翻译：可以防止从旁通管排出到排气系统的处理气体扩散回处理室的内部，而不必在旁通管的下游侧安装专用的真空泵。基板处理装置包括容纳基板的处理室，从处理气体源向处理室供给处理气体的气体供给系统，用于处理基板;构造成排出处理室的排气系统，安装有两个以上的真空泵在排气系统中串联连接的旁通管和连接在气体供给系统和排气系统之间的旁通管。最上游的一个真空泵是机械增压泵，旁通管连接在机械增压泵和位于机械增压泵下游侧的静止真空泵之间。

4. 发明授权

US06332898B1 Substrate processing apparatus and maintenance method therefor 失效
标题翻译：基板加工装置及其维护方法
公开(公告)号：US06332898B1
公开(公告)日：2001-12-25
申请号：US09565376
申请日：2000-05-05
申请人： Kouji Tometsuka , Mitsuhiro Hirano , Tetsuya Marubayashi
发明人： Kouji Tometsuka , Mitsuhiro Hirano , Tetsuya Marubayashi
IPC分类号： H01L2100
CPC分类号： C23C14/56 , C23C16/54 , H01L21/67775 , Y10T29/41
摘要： A substrate processing apparatus comprises a semiconductor wafer processing chamber, a wafer transfer device, a wafer cassette holding unit, a wafer cassette transfer device and a wafer cassette bringing in/out section disposed in this order and a housing. The wafer cassette holding unit is movable between a wafer processing time position and a maintenance time position thereof and the wafer cassette transfer device is movable between a wafer processing time position and a maintenance time position thereof. The wafer cassette bringing in/out section is capable of rotating forward of the housing, whereby the front face of said housing is opened. With the wafer cassette holding unit being positioned at the maintenance time position thereof, the wafer cassette transfer device being positioned at the maintenance time position thereof and the wafer cassette bringing in/out section being rotated forward of the housing to open the front face thereof, maintenance of the wafer transfer device can be performed from the front face of the housing.
摘要翻译：基板处理装置包括半导体晶片处理室，晶片转移装置，晶片盒保持单元，晶片盒转移装置和以该顺序布置的晶片盒导入/退出部分和壳体。晶片盒保持单元可在晶片处理时间位置和其维护时间位置之间移动，并且晶片盒传送装置可在晶片处理时间位置与其维护时间位置之间移动。进入/离开部分的晶片盒能够向壳体的前方转动，从而打开所述壳体的前表面。在晶片盒保持单元位于其维护时间位置的同时，晶片盒传送装置位于其维护时间位置，并且晶片盒带入/退出部分旋转到壳体的前方以打开其前表面，可以从壳体的正面进行晶片传送装置的维护。

5. 发明授权

US6143040A Substrate processing apparatus and maintenance method therefor 失效
标题翻译：基板加工装置及其维护方法
公开(公告)号：US6143040A
公开(公告)日：2000-11-07
申请号：US31950
申请日：1998-02-27
申请人： Kouji Tometsuka , Mitsuhiro Hirano , Tetsuya Marubayashi
发明人： Kouji Tometsuka , Mitsuhiro Hirano , Tetsuya Marubayashi
IPC分类号： B65G49/07 , C23C14/56 , C23C16/54 , H01L21/677 , H01L21/00 , C23C14/00 , C23C16/00 , C25B9/00 , H01L21/64
CPC分类号： C23C14/56 , C23C16/54 , H01L21/67775 , Y10T29/41
摘要： A substrate processing apparatus comprises a semiconductor wafer processing chamber, a wafer transfer device, a wafer cassette holding unit, a wafer cassette transfer device and a wafer cassette bringing in/out section disposed in this order and a housing. The wafer cassette holding unit is movable between a wafer processing time position and a maintenance time position thereof and the wafer cassette transfer device is movable between a wafer processing time position and a maintenance time position thereof. The wafer cassette bringing in/out section is capable of rotating forward of the housing, whereby the front face of said housing is opened. With the wafer cassette holding unit being positioned at the maintenance time position thereof, the wafer cassette transfer device being positioned at the maintenance time position thereof and the wafer cassette bringing in/out section being rotated forward of the housing to open the front face thereof, maintenance of the wafer transfer device can be performed from the front face of the housing.
摘要翻译：基板处理装置包括半导体晶片处理室，晶片转移装置，晶片盒保持单元，晶片盒转移装置和以该顺序布置的晶片盒导入/退出部分和壳体。晶片盒保持单元可在晶片处理时间位置和其维护时间位置之间移动，并且晶片盒传送装置可在晶片处理时间位置与其维护时间位置之间移动。进入/离开部分的晶片盒能够向壳体的前方转动，从而打开所述壳体的前表面。在晶片盒保持单元位于其维护时间位置的同时，晶片盒传送装置位于其维护时间位置，并且晶片盒带入/退出部分旋转到壳体的前方以打开其前表面，可以从壳体的正面进行晶片传送装置的维护。

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