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1. 发明授权

US06633045B1 Assembly part with wiring and for manufacturing system, method of manufacturing such assembly part, and semiconductor manufacturing system constituted using assembly part 失效
标题翻译：具有布线和制造系统的组装部件，这种组装部件的制造方法以及使用组装部件构成的半导体制造系统
公开(公告)号：US06633045B1
公开(公告)日：2003-10-14
申请号：US09667521
申请日：2000-09-22
申请人： Kazuyoshi Sugihara , Atsushi Ando , Katsuya Okumura
发明人： Kazuyoshi Sugihara , Atsushi Ando , Katsuya Okumura
IPC分类号： G21G500
CPC分类号： H05K3/0061 , H01J2237/3175 , H05K1/0284 , H05K1/0393 , H05K1/056 , H05K3/048 , H05K3/28 , H05K3/365 , H05K3/386 , H05K2201/0154 , H05K2203/066 , H05K2203/135
摘要： An assembly part for constituting a unit in a vacuum column is provided with wirings and wiring terminals. Each wiring is provided on a first insulating film, and is covered with a second insulating film made of an electro-deposited polyimide film. The assembly part is used to constitute a semiconductor manufacturing system such as an electron beam exposure system.
摘要翻译：用于构成真空塔中的单元的组装部分设置有布线和布线端子。每个布线设置在第一绝缘膜上，并被由电沉积聚酰亚胺膜制成的第二绝缘膜覆盖。组装部分用于构成诸如电子束曝光系统的半导体制造系统

2. 发明授权

US5989759A Pattern forming method using alignment from latent image or base pattern on substrate 失效
标题翻译：图案形成方法使用在底物上的潜像或基底图案的取向
公开(公告)号：US5989759A
公开(公告)日：1999-11-23
申请号：US30886
申请日：1998-02-26
申请人： Atsushi Ando , Kazuyoshi Sugihara , Katsuya Okumura , Tetsuro Nakasugi
发明人： Atsushi Ando , Kazuyoshi Sugihara , Katsuya Okumura , Tetsuro Nakasugi
IPC分类号： G03F7/20 , H01J37/304 , H01J37/317 , H01L21/027 , G03F9/00
CPC分类号： B82Y10/00 , B82Y40/00 , G03F7/7045 , G03F7/70675 , H01J37/3045 , H01J37/3174 , Y10S430/143
摘要： To achieve down-sizing and improvements of throughputs, light exposure and charge beam exposure are sometimes used together. In case of performing exposure of a desired pattern in a plurality of stages, a positional displacement of each of exposure patterns in the stages leads to a decrease in exposure accuracy. According to the present invention, in case of forming a fine pattern by exposure after exposure of a rough pattern, the exposure position of the rough pattern is adjusted, based on a latent image of the rough pattern which has been subjected to exposure. As a result, a positional displacement between rough and fine patterns is reduced so that a desired pattern can be formed with high accuracy.
摘要翻译：为了实现规模缩小和吞吐量的提高，有时一起使用曝光和电荷束曝光。在多级中进行期望图案的曝光的情况下，各级的曝光图案的位置偏移导致曝光精度降低。根据本发明，在粗糙图案曝光后通过曝光形成精细图案的情况下，基于经受曝光的粗糙图案的潜像，调整粗糙图案的曝光位置。结果，粗图案和精细图案之间的位置偏移减小，从而可以高精度地形成期望的图案。

3. 发明授权

US06495841B1 Charged beam drawing apparatus 失效
标题翻译：充电光束拉制装置
公开(公告)号：US06495841B1
公开(公告)日：2002-12-17
申请号：US09299145
申请日：1999-04-26
申请人： Atsushi Ando , Shunko Magoshi , Kazuyoshi Sugihara , Yuichiro Yamazaki , Motosuke Miyoshi , Katsuya Okumura , Kiyoshi Hattori
发明人： Atsushi Ando , Shunko Magoshi , Kazuyoshi Sugihara , Yuichiro Yamazaki , Motosuke Miyoshi , Katsuya Okumura , Kiyoshi Hattori
IPC分类号： H01J37317
CPC分类号： B82Y10/00 , B82Y40/00 , H01J37/023 , H01J37/3174
摘要： In an electron beam drawing apparatus including an objective lens for focusing an electron beam emitted from an electron gun on a sample surface and an objective deflector for controlling the position of the electron beam on the sample surface, an objective driving mechanism for mechanically moving the objective lens and objective deflector in a plane perpendicular to the optical axis of the electron beam is provided and an optical axis shifting deflector arranged nearer to the electron gun than the objective lens and objective deflector, for deflecting the electron beam in synchronism with the operation of the objective lens and objective deflector is provided.
摘要翻译：在包括用于将从电子枪发射的电子束聚焦在样品表面上的物镜和用于控制电子束在样品表面上的位置的物镜偏转器的电子束描绘装置中，用于机械地移动物镜的物镜驱动机构提供了与电子束的光轴垂直的平面中的透镜和物镜偏转器，并且与物镜和物镜偏转器相比更靠近电子枪布置的光轴移动偏转器，用于与电子束的操作同步地偏转提供物镜和物镜偏转器。

4. 发明授权

US5994030A Pattern-forming method and lithographic system 失效
公开(公告)号：US5994030A
公开(公告)日：1999-11-30
申请号：US30888
申请日：1998-02-26
申请人： Kazuyoshi Sugihara , Hiromi Niiyama , Shunko Magoshi , Atsushi Ando , Tetsuro Nakasugi , Shinji Sato , Yumi Watanabe , Yosimitu Kato , Toru Shibata , Katsuya Okumura
发明人： Kazuyoshi Sugihara , Hiromi Niiyama , Shunko Magoshi , Atsushi Ando , Tetsuro Nakasugi , Shinji Sato , Yumi Watanabe , Yosimitu Kato , Toru Shibata , Katsuya Okumura
IPC分类号： H01L21/027 , G03F7/20 , H01J37/317 , G03C5/00
CPC分类号： B82Y10/00 , B82Y40/00 , G03F7/203 , G03F7/2059 , G03F7/7045 , H01J37/3174
摘要： A rough pattern exceeding the resolution limit of light exposure is formed by light resolution. A fine pattern not exceeding the resolution limit of light exposure is formed by charge-beam exposure. Combining the rough pattern and the fine pattern produces a desired pattern. The sharing of the work between light exposure and charge-beam exposure exhibits the high throughput of light exposure and the excellent resolving power of charge-beam exposure.

5. 发明授权

US6093931A Pattern-forming method and lithographic system 失效
标题翻译：图案形成方法和平版印刷系统
公开(公告)号：US6093931A
公开(公告)日：2000-07-25
申请号：US410018
申请日：1999-10-01
申请人： Kazuyoshi Sugihara , Hiromi Niiyama , Shunko Magoshi , Atsushi Ando , Tetsuro Nakasugi , Shinji Sato , Yumi Watanabe , Yosimitu Kato , Toru Shibata , Katsuya Okumura
发明人： Kazuyoshi Sugihara , Hiromi Niiyama , Shunko Magoshi , Atsushi Ando , Tetsuro Nakasugi , Shinji Sato , Yumi Watanabe , Yosimitu Kato , Toru Shibata , Katsuya Okumura
IPC分类号： H01L21/027 , G03F7/20 , H01J37/317 , H01J37/30
CPC分类号： B82Y10/00 , B82Y40/00 , G03F7/203 , G03F7/2059 , G03F7/7045 , H01J37/3174
摘要： A rough pattern exceeding the resolution limit of light exposure is formed by light resolution. A fine pattern not exceeding the resolution limit of light exposure is formed by charge-beam exposure. Combining the rough pattern and the fine pattern produces a desired pattern. The sharing of the work between light exposure and charge-beam exposure exhibits the high throughput of light exposure and the excellent resolving power of charge-beam exposure.
摘要翻译：通过光分辨率形成超过曝光分辨率极限的粗糙图案。通过电荷束曝光形成不超过曝光的分辨率极限的精细图案。结合粗糙图案和精细图案产生期望的图案。曝光和电荷束曝光之间的工作共享表现出高曝光量和电荷束曝光的优异分辨能力。

6. 发明授权

US06941008B2 Pattern forming method 失效
标题翻译：图案形成方法
公开(公告)号：US06941008B2
公开(公告)日：2005-09-06
申请号：US10407126
申请日：2003-04-07
申请人： Atsushi Ando , Kazuyoshi Sugihara , Katsuya Okumura , Tetsuro Nakasugi
发明人： Atsushi Ando , Kazuyoshi Sugihara , Katsuya Okumura , Tetsuro Nakasugi
IPC分类号： G03F7/20 , H01J37/304 , H01J37/317 , H01L21/027 , G06K9/00
CPC分类号： B82Y10/00 , B82Y40/00 , G03F7/7045 , G03F7/70675 , H01J37/3045 , H01J37/3174 , Y10S430/143
摘要： To achieve down-sizing and improvements of throughputs, light exposure and charge beam exposure are sometimes used together. In case of performing exposure of a desired pattern in a plurality of stages, a positional displacement of each of exposure patterns in the stages leads to a decrease in exposure accuracy. According to the present invention, in case of forming a fine pattern by exposure after exposure of a rough pattern, the exposure position of the rough pattern is adjusted, based on a latent image of the rough pattern which has been subjected to exposure. As a result, a positional-displacement between rough and fine patterns is reduced so that a desired pattern can be formed with high accuracy.
摘要翻译：为了实现规模缩小和吞吐量的提高，有时一起使用曝光和电荷束曝光。在多级中进行期望图案的曝光的情况下，各级的曝光图案的位置偏移导致曝光精度降低。根据本发明，在粗糙图案曝光后通过曝光形成精细图案的情况下，基于经受曝光的粗糙图案的潜像，调整粗糙图案的曝光位置。结果，粗略和精细图案之间的位置偏移减小，从而可以高精度地形成期望的图案。

7. 发明授权

US6147355A Pattern forming method 失效
标题翻译：图案形成方法
公开(公告)号：US6147355A
公开(公告)日：2000-11-14
申请号：US379098
申请日：1999-08-23
申请人： Atsushi Ando , Kazuyoshi Sugihara , Katsuya Okumura , Tetsuro Nakasugi
发明人： Atsushi Ando , Kazuyoshi Sugihara , Katsuya Okumura , Tetsuro Nakasugi
IPC分类号： G03F7/20 , H01J37/304 , H01J37/317 , H01L21/027
CPC分类号： B82Y10/00 , B82Y40/00 , G03F7/7045 , G03F7/70675 , H01J37/3045 , H01J37/3174 , Y10S430/143
摘要： To achieve down-sizing and improvements of throughputs, light exposure and charge beam exposure are sometimes used together. In case of performing exposure of a desired pattern in a plurality of stages, a positional displacement of each of exposure patterns in the stages leads to a decrease in exposure accuracy. According to the present invention, in case of forming a fine pattern by exposure after exposure of a rough pattern, the exposure position of the rough pattern is adjusted, based on a latent image of the rough pattern which has been subjected to exposure. As a result, a positional displacement between rough and fine patterns is reduced so that a desired pattern can be formed with high accuracy.
摘要翻译：为了实现规模缩小和吞吐量的提高，有时一起使用曝光和电荷束曝光。在多级中进行期望图案的曝光的情况下，各级的曝光图案的位置偏移导致曝光精度降低。根据本发明，在粗糙图案曝光后通过曝光形成精细图案的情况下，基于经受曝光的粗糙图案的潜像，调整粗糙图案的曝光位置。结果，粗图案和精细图案之间的位置偏移减小，从而可以高精度地形成期望的图案。

8. 发明授权

US06991878B2 Photomask repair method and apparatus 失效
公开(公告)号：US06991878B2
公开(公告)日：2006-01-31
申请号：US10326112
申请日：2002-12-23
申请人： Shingo Kanamitsu , Takashi Hirano , Fumiaki Shigemitsu , Motosuke Miyoshi , Kazuyoshi Sugihara , Yuichiro Yamazaki , Makoto Sekine , Takayuki Sakai , Ichiro Mori , Katsuya Okumura
发明人： Shingo Kanamitsu , Takashi Hirano , Fumiaki Shigemitsu , Motosuke Miyoshi , Kazuyoshi Sugihara , Yuichiro Yamazaki , Makoto Sekine , Takayuki Sakai , Ichiro Mori , Katsuya Okumura
IPC分类号： G03F9/00 , G03C5/00
CPC分类号： G03F1/74 , G03F1/84 , H01J37/3056 , H01J2237/30438 , H01J2237/31744
摘要： A photomask repair method including scanning an electron beam across a main surface of the photomask, thereby producing a pattern image of the photomask, identifying the position of a defective portion from the pattern image thus produced, and applying an electron beam to a region to be etched including a defective portion under an atmosphere of a gas capable of performing a chemical etching of a film material forming the photomask pattern, thereby removing a defect. In this method, the electron beam to be applied to the region to be etched is a shaped beam. The electron beam is set such that the side of the electron beam is applied in parallel to a borderline between a non-defective pattern and the defect.

9. 发明授权

US5639699A Focused ion beam deposition using TMCTS 失效
标题翻译：使用TMCTS聚焦离子束沉积
公开(公告)号：US5639699A
公开(公告)日：1997-06-17
申请号：US420153
申请日：1995-04-11
申请人： Hiroko Nakamura , Haruki Komano , Kazuyoshi Sugihara , Keiji Horioka , Mitsuyo Kariya , Soichi Inoue , Ichiro Mori , Katsuya Okumura , Tadahiro Takigawa , Toru Watanabe , Motosuke Miyoshi , Yuichiro Yamazaki , Haruo Okano
发明人： Hiroko Nakamura , Haruki Komano , Kazuyoshi Sugihara , Keiji Horioka , Mitsuyo Kariya , Soichi Inoue , Ichiro Mori , Katsuya Okumura , Tadahiro Takigawa , Toru Watanabe , Motosuke Miyoshi , Yuichiro Yamazaki , Haruo Okano
IPC分类号： B05D5/00 , C23C16/04 , G03F1/00 , G03F1/26 , G03F1/74 , H01L21/316
CPC分类号： G03F1/74 , B05D5/005 , C23C16/047 , G03F1/26
摘要： According to this invention, there is provided a method of repairing a bump defect of a structure obtained by forming a predetermined pattern on a substrate, having the steps of forming a first thin film consisting of a material different from that of the substrate on the substrate around the bump defect or close to the bump defect, forming a second thin film on the bump defect and the first thin film to flatten an upper surface of the second thin film, performing simultaneous removal of the bump defect and the thin films on an upper portion of the projecting defect and around the bump defect using a charged particle beam, and performing removal of the thin films left in the step of performing simultaneous removal. According to this invention, there is provided to a method of repairing a divot defect of a structure obtained by forming a predetermined pattern on a substrate, having the steps of burying a material in the divot defect and forming a projecting portion projecting from a substrate surface, covering a region including the projecting portion with flattening films consisting of a material different from that of the substrate to flatten an upper surface of the region, performing simultaneous removal of the projecting portion and the flattening films around the projecting portion using a charged particle beam, and performing removal of the flattening films left in the step of performing simultaneous removal.
摘要翻译：根据本发明，提供了一种修复通过在基板上形成预定图案而获得的结构的凸点缺陷的方法，该方法具有以下步骤：在基板上形成由不同于基板的材料构成的第一薄膜在凸起缺陷附近或接近凸块缺陷的情况下，在凸起缺陷上形成第二薄膜和使第一薄膜平坦化第二薄膜的上表面，同时去除凸起缺陷和上部的薄膜使用带电粒子束的突出缺陷的一部分和凸起缺陷周围，并且执行在执行同时移除的步骤中留下的薄膜的去除。根据本发明，提供了一种修复通过在基板上形成预定图案而获得的结构的凹陷缺陷的方法，该方法具有以下步骤：将材料埋在凹陷缺陷中并形成从基板表面突出的突出部分使用由与基板不同的材料构成的平坦化膜覆盖包括突出部分的区域，以平坦化该区域的上表面，使用带电粒子束同时移除突出部分周围的突出部分和平坦化膜并且执行在执行同时去除的步骤中留下的平坦化膜的去除。

10. 发明授权

US5429730A Method of repairing defect of structure 失效
标题翻译：修复结构缺陷的方法
公开(公告)号：US5429730A
公开(公告)日：1995-07-04
申请号：US144414
申请日：1993-11-02
申请人： Hiroko Nakamura , Haruki Komano , Kazuyoshi Sugihara , Keiji Horioka , Mitsuyo Kariya , Soichi Inoue , Ichiro Mori , Katsuya Okumura , Tadahiro Takigawa , Toru Watanabe , Motosuke Miyoshi , Yuichiro Yamazaki , Haruo Okano
发明人： Hiroko Nakamura , Haruki Komano , Kazuyoshi Sugihara , Keiji Horioka , Mitsuyo Kariya , Soichi Inoue , Ichiro Mori , Katsuya Okumura , Tadahiro Takigawa , Toru Watanabe , Motosuke Miyoshi , Yuichiro Yamazaki , Haruo Okano
IPC分类号： B05D5/00 , C23C16/04 , G03F1/00 , G03F1/26 , G03F1/74 , C23C14/34 , B05D3/06 , B44C1/22
CPC分类号： G03F1/74 , B05D5/005 , C23C16/047 , G03F1/26
摘要： According to this invention, there is provided a method of repairing a bump defect of a structure obtained by forming a predetermined pattern on a substrate, having the steps of forming a first thin film consisting of a material different from that of the substrate on the substrate around the bump defect or close to the bump defect, forming a second thin film on the bump defect and the first thin film to flatten an upper surface of the second thin film, performing simultaneous removal of the bump defect and the thin films on an upper portion of the projecting defect and around the bump defect using a charged particle beam, and performing removal of the thin films left in the step of performing simultaneous removal.
摘要翻译：根据本发明，提供了一种修复通过在基板上形成预定图案而获得的结构的凸点缺陷的方法，该方法具有以下步骤：在基板上形成由不同于基板的材料构成的第一薄膜在凸起缺陷附近或接近凸块缺陷的情况下，在凸起缺陷上形成第二薄膜和使第一薄膜平坦化第二薄膜的上表面，同时去除凸起缺陷和上部的薄膜使用带电粒子束的突出缺陷的一部分和凸起缺陷周围，并且执行在执行同时移除的步骤中留下的薄膜的去除。

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