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1. 发明授权

US5787105A Integrated semiconductor laser apparatus 失效
标题翻译：集成半导体激光装置
公开(公告)号：US5787105A
公开(公告)日：1998-07-28
申请号：US589125
申请日：1996-01-22
申请人： Kazuya Okamoto , Atsushi Yamada , Yoshiaki Nakano , Kunio Tada
发明人： Kazuya Okamoto , Atsushi Yamada , Yoshiaki Nakano , Kunio Tada
IPC分类号： G02B6/42 , H01S5/026 , H01S5/042 , H01S5/12 , H01S5/30 , H01S5/32 , H01S3/19
CPC分类号： G02B6/42 , H01S5/026 , H01S5/0422 , H01S5/12 , H01S5/305 , H01S5/3211
摘要： An integrated semiconductor laser apparatus is constructed in such an arrangement that a core layer is located in the proximity of an active layer so as to be in an evanescent-field area of light propagating in the active layer and that a carrier concentration of a second cladding layer is higher than that of a first cladding layer. Thus, most evanescent waves of light propagating in the core layer propagate in the first cladding layer of the low carrier concentration. Since the rate of evanescent waves absorbed by carriers is very low, the integrated semiconductor laser apparatus can propagate the light with small losses.
摘要翻译：以这样的结构构成集成半导体激光装置，其中芯层位于有源层附近，以便处于在有源层中传播的光的消逝场区域中，并且第二包层的载流子浓度层高于第一覆层的层。因此，在芯层中传播的大部分消逝的光在低载流子浓度的第一包层中传播。由于载流子吸收的ev逝波速度非常低，所以集成半导体激光装置可以以较小的损耗传播光。

2. 发明授权

US5077752A Semiconductor laser 失效
标题翻译：半导体激光器
公开(公告)号：US5077752A
公开(公告)日：1991-12-31
申请号：US546320
申请日：1990-07-02
申请人： Kunio Tada , Yoshiaki Nakano , Yi Luo , Takeshi Inoue , Haruo Hosomatsu , Hideto Iwaoka
发明人： Kunio Tada , Yoshiaki Nakano , Yi Luo , Takeshi Inoue , Haruo Hosomatsu , Hideto Iwaoka
IPC分类号： H01S5/12 , H01S5/34
CPC分类号： B82Y20/00 , H01S5/1228 , H01S5/34
摘要： A distributed feedback semiconductor laser having a diffractive grating on an active layer in order to generate stimulated emission by recombing electrons with positive holes thereon by the light distributed feedback. This laser can achieve precisely single wavelength longitudinal mode lasing as a thin buffer layer is grown on the surface of the semiconductor layer which has been etched with irregular pattern corresponding to the diffractive grating while the corrugated pattern is being maintained intact and an active layer is grown on the surface thereof in a manner to fill in the valleys of the corrugated pattern as much as possible so that a diffractive grating is formed on the active layer and light distributed feedback is caused mainly by the periodic perturbation of gain coefficients stimulated by the diffractive grating.

3. 发明授权

US5289494A Distributed feedback semiconductor laser 失效
标题翻译：分布式反馈半导体激光器
公开(公告)号：US5289494A
公开(公告)日：1994-02-22
申请号：US899860
申请日：1992-06-17
申请人： Kunio Tada , Yoshiaki Nakano , Takeshi Inoue , Yi Luo , Takeshi Irita , Shin-ichi Nakajima , Hideto Iwaoka
发明人： Kunio Tada , Yoshiaki Nakano , Takeshi Inoue , Yi Luo , Takeshi Irita , Shin-ichi Nakajima , Hideto Iwaoka
IPC分类号： H01S5/12 , H01S5/323 , H01S3/08
CPC分类号： H01S5/1228 , H01S5/32391
摘要： This invention relates to a distributed feedback semiconductor laser which achieves distributed feedback by gain coupling by providing periodical changes in the thickness of the active layer (5) or the absorptive layer, and aims to achieve light distributed feedback mainly of periodical perturbation of the gain factor by diminishing the periodical perturbation of refractive index caused by the changes in the thickness of the active layer (5) or the absorptive layer. This invention is characterized by a refractive index canceling structure comprising a combination of layers (6) and (7) of different refractive indices to cancel periodical changes in refractive index caused by the periodical structure of the active layer (5) or the absorptive layer.
摘要翻译： PCT No.PCT / JP91 / 01418 Sec。 371日期：1992年6月17日 102（e）日期1992年6月17日PCT 1991年10月17日PCT公布。公开号WO92 / 07401 本发明涉及一种分布式反馈半导体激光器，其通过增加耦合实现分布式反馈，通过提供有源层（5）或吸收层的厚度的周期性变化，目的是实现主要的光分布反馈通过减少由活性层（5）或吸收层的厚度变化引起的折射率的周期性扰动来增益因子的周期性扰动。本发明的特征在于包括具有不同折射率的层（6）和（7）的组合的折射率消除结构，以消除由有源层（5）或吸收层的周期性结构引起的折射率的周期性变化。

4. 发明授权

US4685763A Light modulation device 失效
标题翻译：调光装置
公开(公告)号：US4685763A
公开(公告)日：1987-08-11
申请号：US902090
申请日：1986-08-27
申请人： Kunio Tada , Yoshikazu Nishiwaki , Shunji Matsuoka
发明人： Kunio Tada , Yoshikazu Nishiwaki , Shunji Matsuoka
IPC分类号： G02B6/12 , G02F1/015 , G02F1/025 , G02F1/313
CPC分类号： G02F1/025 , G02F1/3133 , G02F2001/0151 , G02F2201/063 , G02F2202/101
摘要： A light modulation device according to the present invention comprises a substrate, a substrate layer, an optical waveguide layer, and buffer layers, in the order from the bottom upward, all formed of either n-type or p-type compound semiconductor crystal. In this light modulation device, in order to capture the light in the optical waveguide layer, the composition ratio of the compound semiconductor is so determined that refractive index is at least approximately 0.1% higher in the optical waveguide layer than in the substrate layer and in the buffer layers. Further, the carrier density is low in the optical waveguide layer and in the buffer layers so that the applied voltage is applied mainly to the optical waveguide layer. Because of such construction, the light modulation device according to the present invention is free from strict conditions required in an etching process, is small in absorption loss of light, and can be used as a component of monolithic optical integrated circuit.
摘要翻译：根据本发明的光调制装置，从底部向上依次包括基板，基板层，光波导层和缓冲层，全部由n型或p型化合物半导体晶体形成。在这种光调制装置中，为了捕获光波导层中的光，化合物半导体的组成比被确定为在光波导层中的折射率比衬底层中的折射率高至少高0.1％缓冲层。此外，光波导层和缓冲层中的载流子密度低，使得施加的电压主要应用于光波导层。由于这样的结构，本发明的光调制装置没有严格的蚀刻处理条件，光的吸收损耗小，可以作为单片光集成电路的一个部件使用。

5. 发明授权

US5153687A Semiconductor optical functional device with parabolic wells 失效
标题翻译：具有抛物面井的半导体光学功能器件
公开(公告)号：US5153687A
公开(公告)日：1992-10-06
申请号：US726572
申请日：1991-07-08
申请人： Takuya Ishikawa , Shinji Nishimura , Kunio Tada
发明人： Takuya Ishikawa , Shinji Nishimura , Kunio Tada
IPC分类号： G02B6/12 , G02F1/017 , G02F1/025 , G02F1/313 , G02F1/35
CPC分类号： B82Y20/00 , G02F1/01725 , G02F1/3133 , G02F1/01708 , G02F2001/0175 , G02F2203/06
摘要： An optical switch comprises a substrate, a lower cladding layer, a waveguide layer, and an upper cladding layer each formed of a semiconductor, and in which at least one of the three layers except the substrate has a quantum well structure at a quantum confined potential. The well plane of the quantum well structure is symmetrical with respect to the center position thereof, and varies in proportion to the square of the distance from the center position. If an electric field is applied perpendicular to the well plane, the respective changes in the absorption coefficient and refractive index in the vicinity of the absorption edge are influenced by absorption peak shifts attributable to both 1e-1hh and 1e-11h transitions. Thus, the optical switch operates in response to both TE and TM mode light without depending on polarization.
摘要翻译：光开关包括由半导体形成的基板，下包层，波导层和上包覆层，并且除了基板之外的三个层中的至少一个具有量子阱势能量子阱结构。量子阱结构的阱平面相对于其中心位置是对称的，并且与从中心位置的距离的平方成比例地变化。如果垂直于阱平面施加电场，吸收边缘附近的吸收系数和折射率的相应变化受归因于1e-1hh和1e-11h跃迁的吸收峰位移的影响。因此，光开关响应于TE和TM模式光而不依赖于极化。

6. 发明授权

US5119449A Optical directional coupler switch 失效
标题翻译：光学方向联轴器开关
公开(公告)号：US5119449A
公开(公告)日：1992-06-02
申请号：US486448
申请日：1990-02-28
申请人： Keiro Komatsu , Kunio Tada , Hiroyasu Noguchi , Akira Suzuki
发明人： Keiro Komatsu , Kunio Tada , Hiroyasu Noguchi , Akira Suzuki
IPC分类号： G02F1/313
CPC分类号： G02F1/3133 , G02F2203/06
摘要： An optical directional coupler switch is fabricated from a semiconductor substrate having a (111) plane. Thus, refractive indexes are changed for TE and TM modes by electrooptic effect, although the change amount is different between TE and TM modes. Therefore, a switching operation is realized for an incident light having any polarization. A device length L is preferrably set to meet an equation of "L.sub.TE .ltoreq.L.ltoreq.L.sub.TM " (L.sub.TE and L.sub.TM are coupling lengths for TE and TM modes) to decrease a cross-talk, even if the coupling lengths are different between TE and TM modes, considering that the difference is small.

7. 发明授权

US4832430A Optical switch 失效
标题翻译：光开关
公开(公告)号：US4832430A
公开(公告)日：1989-05-23
申请号：US8371
申请日：1987-01-29
申请人： Kunio Tada , Yoshitaka Okada , Hiroaki Inoue , Hiroyoshi Matsumura
发明人： Kunio Tada , Yoshitaka Okada , Hiroaki Inoue , Hiroyoshi Matsumura
IPC分类号： H01L27/15 , G02F1/31 , G02F1/313
CPC分类号： G02F1/3138
摘要： Electrodes are provided in the vicinity of the switching region of a carrier injection type optical switch, and carriers are removed rapidly through these electrodes when the switch is turned OFF. As the result, a switching speed is increased.
摘要翻译：电极设置在载流子注入型光开关的切换区域附近，并且当开关断开时，载流子通过这些电极被快速地去除。结果，切换速度增加。

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