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    • 1. 发明授权
    • Light modulation device
    • 调光装置
    • US4685763A
    • 1987-08-11
    • US902090
    • 1986-08-27
    • Kunio TadaYoshikazu NishiwakiShunji Matsuoka
    • Kunio TadaYoshikazu NishiwakiShunji Matsuoka
    • G02B6/12G02F1/015G02F1/025G02F1/313
    • G02F1/025G02F1/3133G02F2001/0151G02F2201/063G02F2202/101
    • A light modulation device according to the present invention comprises a substrate, a substrate layer, an optical waveguide layer, and buffer layers, in the order from the bottom upward, all formed of either n-type or p-type compound semiconductor crystal. In this light modulation device, in order to capture the light in the optical waveguide layer, the composition ratio of the compound semiconductor is so determined that refractive index is at least approximately 0.1% higher in the optical waveguide layer than in the substrate layer and in the buffer layers. Further, the carrier density is low in the optical waveguide layer and in the buffer layers so that the applied voltage is applied mainly to the optical waveguide layer. Because of such construction, the light modulation device according to the present invention is free from strict conditions required in an etching process, is small in absorption loss of light, and can be used as a component of monolithic optical integrated circuit.
    • 根据本发明的光调制装置,从底部向上依次包括基板,基板层,光波导层和缓冲层,全部由n型或p型化合物半导体晶体形成。 在这种光调制装置中,为了捕获光波导层中的光,化合物半导体的组成比被确定为在光波导层中的折射率比衬底层中的折射率高至少高0.1% 缓冲层。 此外,光波导层和缓冲层中的载流子密度低,使得施加的电压主要应用于光波导层。 由于这样的结构,本发明的光调制装置没有严格的蚀刻处理条件,光的吸收损耗小,可以作为单片光集成电路的一个部件使用。
    • 7. 发明授权
    • Optical integrated circuit utilizing the piezoelectric and
photoconductive properties of a substrate
    • 利用基片的压电和光导特性的光学集成电路
    • US4641913A
    • 1987-02-10
    • US692872
    • 1985-01-18
    • Yoshikazu NishiwakiYozo Nishiura
    • Yoshikazu NishiwakiYozo Nishiura
    • G01J3/28G02F1/335G02B6/12
    • G02F1/335G01J3/28
    • The present invention provides optical integrated circuits in which both a light function zone and a light reception zone are monolithically formed on the same substrate to obtain high reliability and low noise and loss. The optical integrated circuits according to the present invention have improved electrode structure formed on a light wave guide layer to apply a major portion of the electric field generated by the current flowing in the electrode structure within the light wave guide layer to thus improve light receiving sensitivity. Further, the optical integrated circuits according to the present invention have the light reception zone of the large photoconductive effect on the substrate to develop a light receiving sensitivity to the light function zone without affecting propagation loss.
    • 本发明提供了光集成电路,其中光功能区和光接收区两者单片地形成在同一基板上,以获得高可靠性和低噪声和损耗。 根据本发明的光集成电路具有改善的电波结构,形成在光波导层上,以施加由在光波导层内的电极结构中流动的电流产生的电场的大部分,从而提高光接收灵敏度 。 此外,根据本发明的光集成电路具有在基板上具有大的光电导效应的光接收区,以对光功能区产生光接收灵敏度,而不会影响传播损耗。