专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US09102502B2 Double-deck elevator 有权
标题翻译：双层电梯
公开(公告)号：US09102502B2
公开(公告)日：2015-08-11
申请号：US13383587
申请日：2009-12-09
申请人： Atsushi Yamada , Yasuhiro Goto
发明人： Atsushi Yamada , Yasuhiro Goto
IPC分类号： B66B9/00 , B66B11/02 , B66F7/06
CPC分类号： B66B11/022 , B66F7/0666
摘要： To provide a double-deck elevator characterized by the fact that by increasing the story height adjustment range in the direction in which the two cars approach each other, it is possible to increase the degree of building design freedom. Two up/down cars (6), (7) arranged in outer frame (5) are connected with each other by means of pantographic mechanisms (11) that can effect an expansion and contraction operation, and the two cars (6), (7) are driven to move towards each other or away from each other by means of pantographic mechanisms (11). The pantographic mechanisms (11) are arranged in the spaces between vertical beams (5a) and the two cars (6), (7) and each has a pivot point at the longitudinal central portion of vertical beams (5a) extending vertically in outer frame (5). Due to the pantographic mechanisms (11), the story height adjustment range in the direction in which the two cars (6), (7) approach each other is not restricted.
摘要翻译：提供一种双层电梯，其特征在于，通过增加两车彼此接近的方向的故事高度调节范围，可以增加建筑物设计自由度。布置在外框架（5）中的两个上下车（6），（7）通过能够进行膨胀和收缩操作的缩放机构（11）彼此连接，并且两个轿厢（6），（ 7）通过缩放机构（11）被驱动以彼此移动或彼此远离。集电机构（11）布置在垂直梁（5a）和两车厢（6），（7）之间的空间中，并且每个在垂直梁（5a）的纵向中心部分具有在外框架中垂直延伸的枢轴点（5）。由于集合机构（11），两车（6），（7）彼此接近的方向的故事高度调节范围不受限制。

2. 外观设计

USD732465S1 Automobile tire 有权
公开(公告)号：USD732465S1
公开(公告)日：2015-06-23
申请号：US29431953
申请日：2012-09-12
申请人： Atsushi Yamada
设计人： Atsushi Yamada

3. 发明授权

US08978411B2 Cold-storage heat exchanger 有权
标题翻译：冷库热交换器
公开(公告)号：US08978411B2
公开(公告)日：2015-03-17
申请号：US12800979
申请日：2010-05-27
申请人： Atsushi Yamada , Seiji Inoue , Yoshio Miyata , Naoki Yokoyama , Etsuo Hasegawa , Jun Abei , Hiroshi Ishikawa , Aun Ota , Kouta Hagihara
发明人： Atsushi Yamada , Seiji Inoue , Yoshio Miyata , Naoki Yokoyama , Etsuo Hasegawa , Jun Abei , Hiroshi Ishikawa , Aun Ota , Kouta Hagihara
IPC分类号： F25B39/02 , F28D15/00 , F28D1/03 , F28D1/053 , F28D20/02 , F28F3/02 , F28F1/10 , F28F9/00 , F28F3/04 , F28F17/00 , F28D20/00 , F28D21/00
CPC分类号： F25D13/02 , F25B39/02 , F25D17/005 , F25D19/00 , F28D1/0333 , F28D1/05391 , F28D15/00 , F28D20/02 , F28D2020/0013 , F28D2021/0085 , F28F1/10 , F28F3/025 , F28F3/046 , F28F9/00 , F28F17/005 , Y02E60/145
摘要： An outer surface of a cold-storage container (or a refrigerant tube) is provided with a plurality of protrusion portions or recess portions. A cooling air passage, in which air flows to cool a space to be cooled in a cold storage time and in a cold release time of the cold storage material, is provided to contact a surface of the refrigerant tube on a side opposite to the cold storage container bonded to the refrigerant tube. The refrigerant tubes and the cold storage container form therebetween a cold-storage side air passage by the protrusion portions or the recess portions, such that air flows in the cold-storage side air passage separated from the cooling air passage. For example, the cold-storage side air passage is provided with a slanting space that causes condensed water or ice generated in the cold storage time to be drained along the cold-storage side air passage.
摘要翻译：冷藏容器（或制冷剂管）的外表面设置有多个突出部或凹部。提供冷却空气通道，其中空气流动以冷藏在冷藏时间和冷藏材料的冷却释放时间中待冷却的空间，以在制冷剂管的与冷的相反的一侧接触表面储存容器与制冷剂管接合。制冷剂管和冷藏容器通过突出部或凹部形成冷藏侧空气通路，使得空气在冷藏侧空气通路中与冷却风路分离。例如，冷藏侧空气通道设置有倾斜空间，其使得在冷藏时间中产生的冷凝水或冰沿着冷藏侧空气通道排出。

4. 发明授权

US08748861B2 Compound semiconductor device and method for manufacturing the same 有权
标题翻译：复合半导体器件及其制造方法
公开(公告)号：US08748861B2
公开(公告)日：2014-06-10
申请号：US13587051
申请日：2012-08-16
申请人： Atsushi Yamada
发明人： Atsushi Yamada
IPC分类号： H01L29/06 , H01L29/267
CPC分类号： H02M7/537 , H01L29/2003 , H01L29/402 , H01L29/42316 , H01L29/66431 , H01L29/66462 , H01L29/7787 , H03F1/3247 , H03F2200/204 , H03F2200/541
摘要： An AlGaN/GaN-HEMT has a structure including: compound semiconductor layers formed on a substrate; a gate electrode, a gate pad that has a current path formed between the gate electrode and itself, and a semiconductor layer that is spontaneously polarized and piezoelectrically polarized, which are formed on the compound semiconductor layer; and a gate electrode connection layer formed on the semiconductor layer, wherein the gate electrode connection layer and the gate electrode are electrically connected with each other. This structure which is relatively simple allows the AlGaN/GaN-HEMT to realize an intended normally-off operation without causing such inconveniences as increase in a sheet resistance, increase in an on-resistance, and increase in a leakage current.
摘要翻译： AlGaN / GaN-HEMT具有包括：形成在基板上的化合物半导体层的结构; 栅电极，形成在栅电极和本身之间的电流通路的栅极焊盘和形成在化合物半导体层上的自发极化和压电极化的半导体层; 以及形成在所述半导体层上的栅电极连接层，其中所述栅电极连接层和所述栅电极彼此电连接。这种相对简单的结构允许AlGaN / GaN-HEMT实现预期的常关断操作，而不会引起诸如薄层电阻增加，导通电阻增加和漏电流增加的不便。

5. 发明申请

US20130292926A1 COVER AND AIRBAG DEVICE 有权
标题翻译：盖子和安全气囊装置
公开(公告)号：US20130292926A1
公开(公告)日：2013-11-07
申请号：US13980163
申请日：2012-01-17
申请人： Minhun Kim , Jinhua Piao , Atsushi Yamada
发明人： Minhun Kim , Jinhua Piao , Atsushi Yamada
IPC分类号： B60R21/213
CPC分类号： B60R21/213 , B60R21/237 , B60R2021/161
摘要： A cover used for an airbag device capable of accurately and easily adjusting a deployment direction of an airbag during a side collision according to a deployment position. The cover includes a protecting portion formed along a rolled airbag, and a plurality of attachment portions formed so as to be attached to a body of a vehicle. The protecting portion includes a slit capable of controlling the deployment direction of the airbag by changing a position through which the tab passes toward the body of the vehicle in a rolling direction of the airbag.
摘要翻译：一种用于安全气囊装置的盖子，其能够根据展开位置在侧面碰撞期间准确且容易地调整气囊的展开方向。所述盖包括沿着滚动的安全气囊形成的保护部分，以及形成为附接到车辆本体的多个附接部分。保护部包括能够通过改变突片在气囊的滚动方向上朝向车身行进的位置的变化来控制安全气囊的展开方向的狭缝。

6. 发明申请

US20130146928A1 SEMICONDUCTOR LIGHT-EMITTING DEVICE 审中-公开
公开(公告)号：US20130146928A1
公开(公告)日：2013-06-13
申请号：US13818167
申请日：2012-03-05
申请人： Akira Inoue , Toshiya Yokogawa , Atsushi Yamada , Masaki Fujikane
发明人： Akira Inoue , Toshiya Yokogawa , Atsushi Yamada , Masaki Fujikane
IPC分类号： H01L33/20
CPC分类号： H01L33/20 , H01L33/0079 , H01L33/0095 , H01L33/16 , H01L33/18 , H01L33/32 , H01L33/54 , H01L2224/14 , H01L2224/16225
摘要： A nitride semiconductor light-emitting element 300 is a nitride semiconductor light-emitting element which has a multilayer structure 310, the multilayer structure 310 including an active layer which is made of an m-plane nitride semiconductor. The multilayer structure 310 has a light extraction surface 311a which is parallel to an m-plane in the nitride semiconductor active layer 306 and light extraction surfaces 311b which are parallel to a c-plane in the nitride semiconductor active layer 306. The ratio of an area of the light extraction surfaces 311b to an area of the light extraction surface 311a is not more than 46%.

7. 发明授权

US08441108B2 Nitride semiconductor element having electrode on m-plane and method for producing the same 有权
标题翻译：在m面上具有电极的氮化物半导体元件及其制造方法
公开(公告)号：US08441108B2
公开(公告)日：2013-05-14
申请号：US12993305
申请日：2010-03-16
申请人： Mitsuaki Oya , Toshiya Yokogawa , Atsushi Yamada , Akihiro Isozaki
发明人： Mitsuaki Oya , Toshiya Yokogawa , Atsushi Yamada , Akihiro Isozaki
IPC分类号： H01L29/04
CPC分类号： H01L33/40 , H01L29/2003 , H01L29/452 , H01L33/0095 , H01L33/16 , H01L33/32 , H01L2933/0016
摘要： A nitride-based semiconductor light-emitting device 100 includes: a GaN substrate 10 with an m-plane surface 12; a semiconductor multilayer structure 20 provided on the m-plane surface 12 of the GaN substrate 10; and an electrode 30 provided on the semiconductor multilayer structure 20. The electrode 30 includes a Zn layer 32 and a metal layer 34 provided on the Zn layer 32. The Zn layer 32 is in contact with a surface of a p-type semiconductor region of the semiconductor multilayer structure 20.
摘要翻译：氮化物系半导体发光装置100具备：具有m面面12的GaN衬底10; 设置在GaN衬底10的m面表面12上的半导体多层结构20; 以及设置在半导体层叠结构体20上的电极30.电极30包括Zn层32和设置在Zn层32上的金属层34.Zn层32与p型半导体区域的表面接触半导体多层结构20。

8. 发明授权

US08421054B2 Light-emitting diode 有权
标题翻译：发光二极管
公开(公告)号：US08421054B2
公开(公告)日：2013-04-16
申请号：US13351452
申请日：2012-01-17
申请人： Junko Iwanaga , Toshiya Yokogawa , Atsushi Yamada
发明人： Junko Iwanaga , Toshiya Yokogawa , Atsushi Yamada
IPC分类号： H01L29/04 , H01L29/26
CPC分类号： H01L33/382 , H01L33/16 , H01L33/32
摘要： A light-emitting diode element includes: an n-type conductive layer 2 being made of a gallium nitride-based compound, a principal surface being an m-plane; a semiconductor multilayer structure 21 provided on a first region 2a of the principal surface of the n-type conductive layer 2, the semiconductor multilayer structure 21 including a p-type conductive layer 4 and an active layer 3; a p-electrode 5 provided on the p-type conductive layer 4; a conductor portion 9 provided on a second region 2b of the principal surface of the n-type conductive layer 2, the conductor portion 9 being in contact with an inner wall of a through hole 8; and an n-type front surface electrode 6 provided on the second region 2b of the principal surface of the n-type conductive layer 2, the n-type front surface electrode 6 being in contact with the conductor portion 9.
摘要翻译：发光二极管元件包括：n型导电层2，其由氮化镓基化合物制成，主表面为m面; 设置在n型导电层2的主表面的第一区域2a上的半导体多层结构21，包括p型导电层4和活性层3的半导体多层结构21; 设置在p型导电层4上的p电极5; 设置在n型导电层2的主表面的第二区域2b上的导体部分9，导体部分9与通孔8的内壁接触; 以及设置在n型导电层2的主表面的第二区域2b上的n型正面电极6，n型正面电极6与导体部分9接触。

9. 发明申请

US20130076443A1 COMPOUND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：化合物半导体器件及其制造方法
公开(公告)号：US20130076443A1
公开(公告)日：2013-03-28
申请号：US13546160
申请日：2012-07-11
申请人： Atsushi YAMADA
发明人： Atsushi YAMADA
IPC分类号： H03F3/16 , H01L21/338 , H01L29/778
CPC分类号： H01L29/42316 , H01L29/1066 , H01L29/2003 , H01L29/41766 , H01L29/66462 , H01L29/7787 , H01L2224/0603 , H01L2224/48247 , H01L2224/48472 , H01L2924/181 , H01L2924/00 , H01L2924/00012
摘要： An embodiment of a compound semiconductor device includes: a substrate; an electron channel layer and an electron supply layer formed over the substrate; a gate electrode, a source electrode and a drain electrode formed on or above the electron supply layer; and a p-type semiconductor layer formed between the electron supply layer and the gate electrode. The p-type semiconductor layer contains, as a p-type impurity, an element same as that being contained in at least either of the electron channel layer and the electron supply layer.
摘要翻译：化合物半导体器件的实施例包括：衬底; 形成在所述基板上的电子通道层和电子供给层; 形成在电子供给层上或上方的栅电极，源电极和漏电极; 以及形成在电子供给层和栅电极之间的p型半导体层。作为p型杂质，p型半导体层含有与电子通道层和电子供给层中的至少一方相同的元素。

10. 发明申请

US20130076442A1 COMPOUND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME 审中-公开
公开(公告)号：US20130076442A1
公开(公告)日：2013-03-28
申请号：US13545163
申请日：2012-07-10
申请人： Norikazu Nakamura , Atsushi Yamada , Shiro Ozaki , Kenji Imanishi
发明人： Norikazu Nakamura , Atsushi Yamada , Shiro Ozaki , Kenji Imanishi
IPC分类号： H03F3/16 , H01L21/335 , H01L29/778
CPC分类号： H01L29/0607 , H01L21/02115 , H01L21/02266 , H01L21/02381 , H01L21/02488 , H01L21/02513 , H01L21/0254 , H01L29/2003 , H01L29/41766 , H01L29/66462 , H01L29/778 , H01L29/7787 , H03F1/3247 , H03F3/19 , H03F3/245
摘要： An embodiment of a compound semiconductor device includes: a substrate; a compound semiconductor stacked structure formed over the substrate; and an amorphous insulating film formed between the substrate and the compound semiconductor stacked structure.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式