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1. 发明申请

US20070267711A1 OPTICAL RECEIVING DEVICE 审中-公开
标题翻译：光接收装置
公开(公告)号：US20070267711A1
公开(公告)日：2007-11-22
申请号：US11688595
申请日：2007-03-20
申请人： Kazushige Yamamoto , Tatsuo Shimizu , Shigeru Haneda
发明人： Kazushige Yamamoto , Tatsuo Shimizu , Shigeru Haneda
IPC分类号： H01L31/0232
CPC分类号： H01L31/103 , H01L27/14609 , H01L27/14643 , H01L27/14806 , H01L31/028 , Y02E10/547
摘要： An optical receiving device has a photoelectric conversion layer including a matrix semiconductor containing silicon atoms as a main component, an n-type dopant D substituted for the silicon atom in a lattice site, and a heteroatom Z inserted into an interstitial site positioned closest to the n-type dopant D, in which the heteroatom Z has an electron configuration of a closed shell structure through charge compensation with the dopant D.
摘要翻译：光接收装置具有光电转换层，该光电转换层包括以硅原子为主要成分的矩阵半导体，取代晶格位置的硅原子的n型掺杂剂D，以及插入位于最靠近 n型掺杂剂D，其中通过与掺杂剂D的电荷补偿，杂原子Z具有封闭壳结构的电子构型。

2. 发明申请

US20070145394A1 SEMICONDUCTOR LIGHT-EMITTING MATERIAL AND LIGHT EMITTING DEVICE 有权
标题翻译：半导体发光材料和发光器件
公开(公告)号：US20070145394A1
公开(公告)日：2007-06-28
申请号：US11531426
申请日：2006-09-13
申请人： Tatsuo Shimizu , Kazushige Yamamoto , Shigeru Haneda
发明人： Tatsuo Shimizu , Kazushige Yamamoto , Shigeru Haneda
IPC分类号： H01L33/00
CPC分类号： H01L33/34 , H01L27/1443 , H01L31/153 , H01S5/0207 , H01S5/0261 , H01S5/0262 , H01S5/028 , H01S5/18311 , H01S5/18369 , H01S5/22 , H01S5/305 , H01S5/3054 , H01S5/3201 , H01S5/3224 , H01S5/423
摘要： A semiconductor light-emitting material includes a semiconductor substance including a matrix semiconductor whose constituent atoms are bonded to form a tetrahedral structure, an impurity atom S substituted for an atom in a lattice site of the matrix semiconductor, and an impurity atom I inserted in a interstitial site of the matrix semiconductor, the impurity atom S and the impurity atom I being bonded through charge transfer therebetween in a state that the impurity atom S has an electric charge coincident with that of the constituent atom of the matrix semiconductor and the impurity atom I has an electron configuration of a closed shell structure, in which the semiconductor substance is stretched in a direction of a bond forming the tetrahedral structure.
摘要翻译：半导体发光材料包括半导体物质，其包含其组成原子键合以形成四面体结构的基质半导体，取代基质半导体的晶格位置中的原子的杂质原子S和插入到基质半导体中的杂质原子I 在杂质原子S的电荷与矩阵半导体的构成原子的电荷一致的状态下，杂质原子S和杂质原子I通过电荷转移而键合的杂质原子I和杂质原子I 具有闭合壳结构的电子构造，其中半导体物质沿形成四面体结构的键的方向被拉伸。

3. 发明申请

US20090008653A1 LIGHT EMITTING DEVICE 失效
标题翻译：发光装置
公开(公告)号：US20090008653A1
公开(公告)日：2009-01-08
申请号：US12207178
申请日：2008-09-09
申请人： Kazushige YAMAMOTO , Tatsuo Shimizu , Shigeru Haneda
发明人： Kazushige YAMAMOTO , Tatsuo Shimizu , Shigeru Haneda
IPC分类号： H01L33/00 , H01J1/62
CPC分类号： H01L33/26 , B82Y20/00 , H01S5/22 , H01S5/3224 , H01S5/3412
摘要： A light emitting device includes an active layer including atoms A of a matrix semiconductor having a tetrahedral structure, a heteroatom D substituted for the atom A in a lattice site, and a heteroatom Z inserted into an interstitial site positioned closest to the heteroatom D, the heteroatom D having a valence electron number differing by +1 or −1 from that of the atom A, and the heteroatom Z having an electron configuration of a closed shell structure through charge compensation with the heteroatom D, and an n-electrode and a p-electrode adapted to supply a current to the active layer.
摘要翻译：发光器件包括活性层，其包括具有四面体结构的基质半导体的原子A，取代晶格位点中的原子A的杂原子D和插入最靠近杂原子D的间隙位置的杂原子Z，具有与原子A的价电子数不等于+1或-1的杂原子D，并且通过电荷补偿与杂原子D具有闭合壳结构的电子构型的杂原子Z，以及n电极和p - 电极，其适于向有源层提供电流。

4. 发明授权

US07446348B2 Light emitting device with filled tetrahedral (FT) semiconductor in the active layer 失效
标题翻译：在活性层中具有填充的四面体（FT）半导体的发光器件
公开(公告)号：US07446348B2
公开(公告)日：2008-11-04
申请号：US11533149
申请日：2006-09-19
申请人： Kazushige Yamamoto , Tatsuo Shimizu , Shigeru Haneda
发明人： Kazushige Yamamoto , Tatsuo Shimizu , Shigeru Haneda
IPC分类号： H01L27/15
CPC分类号： H01L33/26 , B82Y20/00 , H01S5/22 , H01S5/3224 , H01S5/3412
摘要： A light emitting device includes an active layer including atoms A of a matrix semiconductor having a tetrahedral structure, a heteroatom D substituted for the atom A in a lattice site, and a heteroatom Z inserted into an interstitial site positioned closest to the heteroatom D, the heteroatom D having a valence electron number differing by +1 or −1 from that of the atom A, and the heteroatom Z having an electron configuration of a closed shell structure through charge compensation with the heteroatom D, and an n-electrode and a p-electrode adapted to supply a current to the active layer.
摘要翻译：发光器件包括活性层，其包括具有四面体结构的基质半导体的原子A，取代晶格位点中的原子A的杂原子D和插入最靠近杂原子D的间隙位置的杂原子Z，具有与原子A的价电子数不等于+1或-1的杂原子D，并且通过电荷补偿与杂原子D具有闭合壳结构的电子构型的杂原子Z，以及n电极和p - 电极，其适于向有源层提供电流。

5. 发明授权

US07977693B2 Semiconductor light-emitting material with tetrahedral structure formed therein 有权
标题翻译：在其中形成四面体结构的半导体发光材料
公开(公告)号：US07977693B2
公开(公告)日：2011-07-12
申请号：US11531426
申请日：2006-09-13
申请人： Tatsuo Shimizu , Kazushige Yamamoto , Shigeru Haneda
发明人： Tatsuo Shimizu , Kazushige Yamamoto , Shigeru Haneda
IPC分类号： H01L33/00
CPC分类号： H01L33/34 , H01L27/1443 , H01L31/153 , H01S5/0207 , H01S5/0261 , H01S5/0262 , H01S5/028 , H01S5/18311 , H01S5/18369 , H01S5/22 , H01S5/305 , H01S5/3054 , H01S5/3201 , H01S5/3224 , H01S5/423
摘要： A semiconductor light-emitting material includes a semiconductor substance including a matrix semiconductor whose constituent atoms are bonded to form a tetrahedral structure, an impurity atom S substituted for an atom in a lattice site of the matrix semiconductor, and an impurity atom I inserted in a interstitial site of the matrix semiconductor, the impurity atom S and the impurity atom I being bonded through charge transfer therebetween in a state that the impurity atom S has an electric charge coincident with that of the constituent atom of the matrix semiconductor and the impurity atom I has an electron configuration of a closed shell structure, in which the semiconductor substance is stretched in a direction of a bond forming the tetrahedral structure.
摘要翻译：半导体发光材料包括半导体物质，其包含其组成原子键合以形成四面体结构的基质半导体，取代基质半导体的晶格位置中的原子的杂质原子S和插入到基质半导体中的杂质原子I 在杂质原子S的电荷与矩阵半导体的构成原子的电荷一致的状态下，杂质原子S和杂质原子I通过电荷转移而键合的杂质原子I和杂质原子I 具有闭合壳结构的电子构造，其中半导体物质沿形成四面体结构的键的方向被拉伸。

6. 发明授权

US07550779B2 Light emitting device with filled tetrahedral (FT) semiconductor in the active layer 失效
标题翻译：在活性层中具有填充的四面体（FT）半导体的发光器件
公开(公告)号：US07550779B2
公开(公告)日：2009-06-23
申请号：US12207178
申请日：2008-09-09
申请人： Kazushige Yamamoto , Tatsuo Shimizu , Shigeru Haneda
发明人： Kazushige Yamamoto , Tatsuo Shimizu , Shigeru Haneda
IPC分类号： H01L27/15
CPC分类号： H01L33/26 , B82Y20/00 , H01S5/22 , H01S5/3224 , H01S5/3412
摘要： A light emitting device includes an active layer including atoms A of a matrix semiconductor having a tetrahedral structure, a heteroatom D substituted for the atom A in a lattice site, and a heteroatom Z inserted into an interstitial site positioned closest to the heteroatom D, the heteroatom D having a valence electron number differing by +1 or −1 from that of the atom A, and the heteroatom Z having an electron configuration of a closed shell structure through charge compensation with the heteroatom D, and an n-electrode and a p-electrode adapted to supply a current to the active layer.
摘要翻译：发光器件包括活性层，其包括具有四面体结构的基质半导体的原子A，取代晶格位点中的原子A的杂原子D和插入最靠近杂原子D的间隙位置的杂原子Z，具有与原子A的价电子数不等于+1或-1的杂原子D，并且通过电荷补偿与杂原子D具有闭合壳结构的电子构型的杂原子Z，以及n电极和p - 电极，其适于向有源层提供电流。

7. 发明申请

US20110260558A1 STAGE DRIVE DEVICE 失效
标题翻译：舞台驱动装置
公开(公告)号：US20110260558A1
公开(公告)日：2011-10-27
申请号：US13123199
申请日：2009-10-06
申请人： Masashi Shibahara , Mikio Tokuyama , Koichiro Takeuchi , Shigeru Haneda , Osamu Yamada , Naoki Sakamoto , Eiichi Hazaki , Akito Tanokuchi
发明人： Masashi Shibahara , Mikio Tokuyama , Koichiro Takeuchi , Shigeru Haneda , Osamu Yamada , Naoki Sakamoto , Eiichi Hazaki , Akito Tanokuchi
IPC分类号： H02K41/02 , B23P11/00
CPC分类号： H01J37/20 , H01J2237/20221 , H01J2237/20264 , H01J2237/28
摘要： A stage comprises a linear guide rail (2) for guiding a movable table (4), a driven bar (12), a linear drive actuator in contact with the driven bar (12) to transmit driving force to the driven bar (12), and parallel plate springs (30) for holding opposite ends of the driven bar (12). A drive transmitting surface of the linear drive actuator is provided so as to be separated from the movable table (4), and this prevents the accuracy of positioning from being reduced. Also, the parallel springs (30) reduce deforming forces applied to sections supporting the driven bar (12), and this prevents the driven bar from being damaged. The configuration makes the stage highly accurate and highly reliable.
摘要翻译：平台包括用于引导可动台（4）的直线导轨（2），从动杆（12），与从动杆（12）接触的线性驱动致动器，以将驱动力传递到从动杆（12）和用于保持从动杆（12）的相对端的平行板簧（30）。线性驱动致动器的驱动传递表面设置成与可移动台（4）分离，这防止定位精度降低。此外，平行弹簧（30）减小施加到支撑从动杆（12）的部分的变形力，并且这防止被驱动杆被损坏。该配置使舞台高度准确和高度可靠。

8. 发明授权

US07558103B2 Magnetic switching element and signal processing device using the same 失效
标题翻译：磁性开关元件及使用其的信号处理装置
公开(公告)号：US07558103B2
公开(公告)日：2009-07-07
申请号：US11729982
申请日：2007-03-30
申请人： Shiho Nakamura , Yuichi Motoi , Shigeru Haneda , Hirofumi Morise , Takahiro Hirai
发明人： Shiho Nakamura , Yuichi Motoi , Shigeru Haneda , Hirofumi Morise , Takahiro Hirai
IPC分类号： G11C11/00
CPC分类号： G11C11/16 , B82Y10/00 , G11C13/025 , G11C23/00 , G11C2213/71 , H01H1/0094 , Y10S977/725 , Y10S977/943
摘要： A magnetic switching element according to an example of the present invention includes a magnetic element, first and second electrodes which put the magnetic element therebetween, a current control section which is connected to the first and second electrodes, the current control section controlling a magnetization direction of a magnetization free section in such a manner that a current is made to flow between the magnetization free section and the magnetization fixed section, a movable conductive tube having a fixed end and a free end, and a third electrode connected to the fixed end of the conductive tube. A switching operation is performed in such a manner that a spatial position of the conductive tube is caused to change depending on the magnetization direction of the magnetization free section.
摘要翻译：根据本发明的实施例的磁性开关元件包括磁性元件，将磁性元件放置在其间的第一和第二电极，连接到第一和第二电极的电流控制部分，电流控制部分控制磁化方向的无磁化部分，使得电流在磁化自由部分和磁化固定部分之间流动，具有固定端和自由端的可移动导电管和连接到固定端的固定端的第三电极导电管。以使得导电管的空间位置根据磁化自由部的磁化方向而变化的方式进行切换操作。

9. 发明授权

US07486486B2 Magnetic device to reduce reversal current in current-driven magnetic reversal and magnetic memory using same 有权
标题翻译：磁性装置可减少电流驱动磁反转和磁存储器中的反转电流
公开(公告)号：US07486486B2
公开(公告)日：2009-02-03
申请号：US10954099
申请日：2004-09-30
申请人： Shiho Nakamura , Shigeru Haneda
发明人： Shiho Nakamura , Shigeru Haneda
IPC分类号： G11B5/127
CPC分类号： G11C11/15 , G11B5/1276
摘要： A magnetic device includes a first ferromagnetic layer in which magnetic layers and one or more nonmagnetic layers are alternately stacked, a second ferromagnetic layer having magnetization substantially fixed to a second direction, a third ferromagnetic layer provided between the first and second ferromagnetic layers and having a variable direction of magnetization, and a couple of electrodes configured to provide write current between the first and second ferromagnetic layers so that the direction of magnetization of the third ferromagnetic layer is determined depending on a direction of the current. At least one layer of the magnetic layers has magnetization substantially fixed to a first direction. Two or more layers of the magnetic layers are ferromagnetically coupled via the nonmagnetic layers. The ferromagnetic coupling has a strength such that a parallel magnetic alignment of the magnetic layers is maintained when the write current is passed.
摘要翻译：磁性装置包括第一铁磁层，其中磁性层和一个或多个非磁性层交替堆叠，具有基本上固定在第二方向上的磁化的第二铁磁层;设置在第一和第二铁磁层之间的第三铁磁层，可变磁化方向，以及配置成在第一和第二铁磁层之间提供写入电流的一对电极，使得第三铁磁层的磁化方向根据电流的方向来确定。至少一层磁性层具有大致固定在第一方向上的磁化。两层或多层磁性层通过非磁性层铁磁耦合。铁磁耦合具有这样的强度，使得当写入电流通过时，保持磁性层的平行磁性取向。

10. 发明授权

US07126849B2 Magnetic cell and magnetic memory 有权
标题翻译：磁性细胞和磁记忆
公开(公告)号：US07126849B2
公开(公告)日：2006-10-24
申请号：US11227493
申请日：2005-09-16
申请人： Shiho Nakamura , Shigeru Haneda , Yuichi Ohsawa
发明人： Shiho Nakamura , Shigeru Haneda , Yuichi Ohsawa
IPC分类号： G11C11/14
CPC分类号： H01L43/08 , G11C11/15 , G11C11/16 , G11C11/5607 , H01L27/224 , H01L27/228
摘要： A magnetic cell includes: a first ferromagnetic layer whose magnetization is substantially fixed in a first direction; a second ferromagnetic layer whose magnetization is substantially fixed in a second direction opposite to the first direction; a third ferromagnetic layer provided between the first and the second ferromagnetic layers, a direction of magnetization of the third ferromagnetic layer being variable; a first intermediate layer provided between the first and the third ferromagnetic layers; and a second intermediate layer provided between the second and the third ferromagnetic layers. The direction of magnetization of the third ferromagnetic layer can be determined under an influence of spin-polarized electrons upon the third ferromagnetic layer by passing a current between the first and the second ferromagnetic layers.
摘要翻译：磁性电池包括：第一铁磁层，其磁化基本上固定在第一方向上; 第二铁磁层，其磁化基本上固定在与第一方向相反的第二方向上; 设置在所述第一和第二铁磁层之间的第三铁磁层，所述第三铁磁层的磁化方向是可变的; 设置在第一和第三铁磁层之间的第一中间层; 以及设置在第二和第三铁磁层之间的第二中间层。可以通过在第一和第二铁磁层之间通过电流，在自旋极化电子对第三铁磁层的影响下确定第三铁磁层的磁化方向。

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