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1. 发明授权

US07977693B2 Semiconductor light-emitting material with tetrahedral structure formed therein 有权
标题翻译：在其中形成四面体结构的半导体发光材料
公开(公告)号：US07977693B2
公开(公告)日：2011-07-12
申请号：US11531426
申请日：2006-09-13
申请人： Tatsuo Shimizu , Kazushige Yamamoto , Shigeru Haneda
发明人： Tatsuo Shimizu , Kazushige Yamamoto , Shigeru Haneda
IPC分类号： H01L33/00
CPC分类号： H01L33/34 , H01L27/1443 , H01L31/153 , H01S5/0207 , H01S5/0261 , H01S5/0262 , H01S5/028 , H01S5/18311 , H01S5/18369 , H01S5/22 , H01S5/305 , H01S5/3054 , H01S5/3201 , H01S5/3224 , H01S5/423
摘要： A semiconductor light-emitting material includes a semiconductor substance including a matrix semiconductor whose constituent atoms are bonded to form a tetrahedral structure, an impurity atom S substituted for an atom in a lattice site of the matrix semiconductor, and an impurity atom I inserted in a interstitial site of the matrix semiconductor, the impurity atom S and the impurity atom I being bonded through charge transfer therebetween in a state that the impurity atom S has an electric charge coincident with that of the constituent atom of the matrix semiconductor and the impurity atom I has an electron configuration of a closed shell structure, in which the semiconductor substance is stretched in a direction of a bond forming the tetrahedral structure.
摘要翻译：半导体发光材料包括半导体物质，其包含其组成原子键合以形成四面体结构的基质半导体，取代基质半导体的晶格位置中的原子的杂质原子S和插入到基质半导体中的杂质原子I 在杂质原子S的电荷与矩阵半导体的构成原子的电荷一致的状态下，杂质原子S和杂质原子I通过电荷转移而键合的杂质原子I和杂质原子I 具有闭合壳结构的电子构造，其中半导体物质沿形成四面体结构的键的方向被拉伸。

2. 发明授权

US07446348B2 Light emitting device with filled tetrahedral (FT) semiconductor in the active layer 失效
标题翻译：在活性层中具有填充的四面体（FT）半导体的发光器件
公开(公告)号：US07446348B2
公开(公告)日：2008-11-04
申请号：US11533149
申请日：2006-09-19
申请人： Kazushige Yamamoto , Tatsuo Shimizu , Shigeru Haneda
发明人： Kazushige Yamamoto , Tatsuo Shimizu , Shigeru Haneda
IPC分类号： H01L27/15
CPC分类号： H01L33/26 , B82Y20/00 , H01S5/22 , H01S5/3224 , H01S5/3412
摘要： A light emitting device includes an active layer including atoms A of a matrix semiconductor having a tetrahedral structure, a heteroatom D substituted for the atom A in a lattice site, and a heteroatom Z inserted into an interstitial site positioned closest to the heteroatom D, the heteroatom D having a valence electron number differing by +1 or −1 from that of the atom A, and the heteroatom Z having an electron configuration of a closed shell structure through charge compensation with the heteroatom D, and an n-electrode and a p-electrode adapted to supply a current to the active layer.
摘要翻译：发光器件包括活性层，其包括具有四面体结构的基质半导体的原子A，取代晶格位点中的原子A的杂原子D和插入最靠近杂原子D的间隙位置的杂原子Z，具有与原子A的价电子数不等于+1或-1的杂原子D，并且通过电荷补偿与杂原子D具有闭合壳结构的电子构型的杂原子Z，以及n电极和p - 电极，其适于向有源层提供电流。

3. 发明申请

US20070267711A1 OPTICAL RECEIVING DEVICE 审中-公开
标题翻译：光接收装置
公开(公告)号：US20070267711A1
公开(公告)日：2007-11-22
申请号：US11688595
申请日：2007-03-20
申请人： Kazushige Yamamoto , Tatsuo Shimizu , Shigeru Haneda
发明人： Kazushige Yamamoto , Tatsuo Shimizu , Shigeru Haneda
IPC分类号： H01L31/0232
CPC分类号： H01L31/103 , H01L27/14609 , H01L27/14643 , H01L27/14806 , H01L31/028 , Y02E10/547
摘要： An optical receiving device has a photoelectric conversion layer including a matrix semiconductor containing silicon atoms as a main component, an n-type dopant D substituted for the silicon atom in a lattice site, and a heteroatom Z inserted into an interstitial site positioned closest to the n-type dopant D, in which the heteroatom Z has an electron configuration of a closed shell structure through charge compensation with the dopant D.
摘要翻译：光接收装置具有光电转换层，该光电转换层包括以硅原子为主要成分的矩阵半导体，取代晶格位置的硅原子的n型掺杂剂D，以及插入位于最靠近 n型掺杂剂D，其中通过与掺杂剂D的电荷补偿，杂原子Z具有封闭壳结构的电子构型。

4. 发明申请

US20070145394A1 SEMICONDUCTOR LIGHT-EMITTING MATERIAL AND LIGHT EMITTING DEVICE 有权
标题翻译：半导体发光材料和发光器件
公开(公告)号：US20070145394A1
公开(公告)日：2007-06-28
申请号：US11531426
申请日：2006-09-13
申请人： Tatsuo Shimizu , Kazushige Yamamoto , Shigeru Haneda
发明人： Tatsuo Shimizu , Kazushige Yamamoto , Shigeru Haneda
IPC分类号： H01L33/00
CPC分类号： H01L33/34 , H01L27/1443 , H01L31/153 , H01S5/0207 , H01S5/0261 , H01S5/0262 , H01S5/028 , H01S5/18311 , H01S5/18369 , H01S5/22 , H01S5/305 , H01S5/3054 , H01S5/3201 , H01S5/3224 , H01S5/423
摘要： A semiconductor light-emitting material includes a semiconductor substance including a matrix semiconductor whose constituent atoms are bonded to form a tetrahedral structure, an impurity atom S substituted for an atom in a lattice site of the matrix semiconductor, and an impurity atom I inserted in a interstitial site of the matrix semiconductor, the impurity atom S and the impurity atom I being bonded through charge transfer therebetween in a state that the impurity atom S has an electric charge coincident with that of the constituent atom of the matrix semiconductor and the impurity atom I has an electron configuration of a closed shell structure, in which the semiconductor substance is stretched in a direction of a bond forming the tetrahedral structure.
摘要翻译：半导体发光材料包括半导体物质，其包含其组成原子键合以形成四面体结构的基质半导体，取代基质半导体的晶格位置中的原子的杂质原子S和插入到基质半导体中的杂质原子I 在杂质原子S的电荷与矩阵半导体的构成原子的电荷一致的状态下，杂质原子S和杂质原子I通过电荷转移而键合的杂质原子I和杂质原子I 具有闭合壳结构的电子构造，其中半导体物质沿形成四面体结构的键的方向被拉伸。

5. 发明授权

US07550779B2 Light emitting device with filled tetrahedral (FT) semiconductor in the active layer 失效
标题翻译：在活性层中具有填充的四面体（FT）半导体的发光器件
公开(公告)号：US07550779B2
公开(公告)日：2009-06-23
申请号：US12207178
申请日：2008-09-09
申请人： Kazushige Yamamoto , Tatsuo Shimizu , Shigeru Haneda
发明人： Kazushige Yamamoto , Tatsuo Shimizu , Shigeru Haneda
IPC分类号： H01L27/15
CPC分类号： H01L33/26 , B82Y20/00 , H01S5/22 , H01S5/3224 , H01S5/3412
摘要： A light emitting device includes an active layer including atoms A of a matrix semiconductor having a tetrahedral structure, a heteroatom D substituted for the atom A in a lattice site, and a heteroatom Z inserted into an interstitial site positioned closest to the heteroatom D, the heteroatom D having a valence electron number differing by +1 or −1 from that of the atom A, and the heteroatom Z having an electron configuration of a closed shell structure through charge compensation with the heteroatom D, and an n-electrode and a p-electrode adapted to supply a current to the active layer.
摘要翻译：发光器件包括活性层，其包括具有四面体结构的基质半导体的原子A，取代晶格位点中的原子A的杂原子D和插入最靠近杂原子D的间隙位置的杂原子Z，具有与原子A的价电子数不等于+1或-1的杂原子D，并且通过电荷补偿与杂原子D具有闭合壳结构的电子构型的杂原子Z，以及n电极和p - 电极，其适于向有源层提供电流。

6. 发明授权

US08421115B2 Semiconductor material, method of producing semiconductor material, light emitting device and light receiving device 失效
标题翻译：半导体材料，半导体材料的制造方法，发光装置和光接收装置
公开(公告)号：US08421115B2
公开(公告)日：2013-04-16
申请号：US12617104
申请日：2009-11-12
申请人： Kazushige Yamamoto , Tatsuo Shimizu
发明人： Kazushige Yamamoto , Tatsuo Shimizu
IPC分类号： H01L33/16 , H01L31/0256
CPC分类号： H01L31/0352 , H01L21/26506 , H01L29/12 , H01L33/0054 , H01L33/18 , H01L33/34
摘要： A semiconductor material includes a matrix semiconductor includes constituent atoms bonded to each other into a tetrahedral bond structure, and a heteroatom Z doped to the matrix semiconductor, in which the heteroatom Z is inserted in a bond so as to form a bond-center structure with an stretched bond length, and the bond-center structure is contained in a proportion of 1% or more based on the heteroatom Z.
摘要翻译：半导体材料包括矩阵半导体，其包括彼此键合成四面体键结构的构成原子和掺杂到基体半导体的杂原子Z，其中杂原子Z插入键以形成键中心结构，拉伸的键长度，并且键 - 中心结构以基于杂原子Z的1％或更多的比例包含。

7. 发明授权

US07705400B2 Semiconductor device using Filled Tetrahedral semiconductor 有权
标题翻译：使用填充四面体半导体的半导体器件
公开(公告)号：US07705400B2
公开(公告)日：2010-04-27
申请号：US11837932
申请日：2007-08-13
申请人： Tatsuo Shimizu , Kazushige Yamamoto
发明人： Tatsuo Shimizu , Kazushige Yamamoto
IPC分类号： H01L27/01 , H01L27/12 , H01L31/0392
CPC分类号： H01L21/26506 , H01L21/26513 , H01L21/2658 , H01L21/823807 , H01L21/84 , H01L29/105 , H01L29/1054 , H01L29/66545 , H01L29/7842 , H01L29/78681 , H01L29/78684
摘要： A semiconductor device provided with a filled tetrahedral semiconductor is formed by introducing impurity atoms S for substituting the component atoms of sites of lattice points and impurity atoms I to be inserted into interstitial sites of a host semiconductor where component atoms are bonded to form a tetrahedral bonding structure. Such a semiconductor device is made to show a high mobility level and a high current drive force as a semiconductor substance where impurity atoms S are made to have a valance electron agreeing with that of the component atoms of the host semiconductor as a result of charge transfer between impurity atoms S and impurity atoms I and impurity atoms I are bonded in a state of showing an electronic arrangement of a closed shell structure is used as channel material.
摘要翻译：设置有填充的四面体半导体的半导体器件通过引入杂质原子S来形成，用于将待插入组分原子键合的主体半导体的间隙位置的晶格点和杂质原子I的组分原子代替以形成四面体键合结构体。使这样的半导体器件显示作为半导体物质的高迁移率水平和高电流驱动力，其中杂质原子S由于电荷转移而具有与主体半导体的成分原子一致的价电子杂质原子S与杂质原子I之间的杂质原子I与封闭壳结构的电子配置的状态下的键合用作沟道材料。

8. 发明授权

US07859077B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US07859077B2
公开(公告)日：2010-12-28
申请号：US11937730
申请日：2007-11-09
申请人： Kazushige Yamamoto , Tatsuo Shimizu
发明人： Kazushige Yamamoto , Tatsuo Shimizu
IPC分类号： H01L31/06
CPC分类号： H01L27/1443 , H04B10/801
摘要： A semiconductor device includes: an n-type MOS transistor and a p-type MOS transistor connected in series; and a first gate extending via an insulating film above a channel of the n-type MOS transistor and a channel of the p-type MOS transistor. By providing light to the first gate, electrons and holes are generated, at least one of either of the electrons and holes passes through above the channel of the n-type MOS transistor and at least one of the either of the electrons and holes passes through above the channel of the p-type MOS transistor, whereby the n-type MOS transistor and the p-type MOS transistor are switched.
摘要翻译：半导体器件包括：串联连接的n型MOS晶体管和p型MOS晶体管; 以及通过n型MOS晶体管的沟道上的绝缘膜和p型MOS晶体管的沟道延伸的第一栅极。通过向第一栅极提供光，产生电子和空穴，电子和空穴中的至少一个通过n型MOS晶体管的沟道上方，并且任一电子和空穴中的至少一个穿过在p型MOS晶体管的沟道之上，从而切换n型MOS晶体管和p型MOS晶体管。

9. 发明授权

US07809039B2 Light-emitting device and manufacturing method of the same 失效
标题翻译：发光装置及其制造方法
公开(公告)号：US07809039B2
公开(公告)日：2010-10-05
申请号：US12409693
申请日：2009-03-24
申请人： Kazushige Yamamoto , Haruhiko Yoshida , Tatsuo Shimizu
发明人： Kazushige Yamamoto , Haruhiko Yoshida , Tatsuo Shimizu
IPC分类号： H01S5/00
CPC分类号： H01S5/125 , B82Y20/00 , H01S5/021 , H01S5/026 , H01S5/1032 , H01S5/1071 , H01S5/30 , H01S5/3224 , H01S5/34 , H01S5/3428
摘要： A semiconductor light-emitting device including an insulating film, an optical resonator formed on the insulating film, and a p-electrode and an n-electrode which are disposed on the both sides of the optical resonator, respectively. The optical resonator includes a first semiconductor wire and a second semiconductor wire which are arranged in parallel with a space left therebetween, the space being narrower than emission wavelength, resonator mirrors disposed at the both ends of these semiconductor wires, and a plurality of semiconductor ultra-thin films which are interposed between the first semiconductor wire and the second semiconductor wire and are electrically connected with these semiconductor wires, the first semiconductor wire is electrically connected with the p-electrode, and the second semiconductor wire is electrically connected with the n-electrode, thereby enabling the semiconductor ultra-thin films to generate laser oscillation as a current is injected thereinto.
摘要翻译：一种半导体发光装置，分别包括绝缘膜，形成在绝缘膜上的光谐振器，以及分别设置在光谐振器两侧的p电极和n电极。光谐振器包括：第一半导体布线和第二半导体布线，它们与其间隔开的空间平行设置，该空间比发射波长窄，设置在这些半导体布线两端的谐振镜，以及多个半导体超导体介于第一半导体布线和第二半导体布线之间并与这些半导体布线电连接的第一半导体布线与p电极电连接，第二半导体布线与n型电极电连接，电极，从而使得半导体超薄膜能够在注入电流时产生激光振荡。

10. 发明申请

US20100123165A1 SEMICONDUCTOR MATERIAL, METHOD OF PRODUCING SEMICONDUCTOR MATERIAL, LIGHT EMITTING DEVICE AND LIGHT RECEIVING DEVICE 失效
标题翻译：半导体材料，半导体材料的制造方法，发光装置和接收光的装置
公开(公告)号：US20100123165A1
公开(公告)日：2010-05-20
申请号：US12617104
申请日：2009-11-12
申请人： Kazushige Yamamoto , Tatsuo Shimizu
发明人： Kazushige Yamamoto , Tatsuo Shimizu
IPC分类号： H01L29/12 , H01L21/34 , H01L33/00 , H01L31/032
CPC分类号： H01L31/0352 , H01L21/26506 , H01L29/12 , H01L33/0054 , H01L33/18 , H01L33/34
摘要： A semiconductor material includes a matrix semiconductor includes constituent atoms bonded to each other into a tetrahedral bond structure, and a heteroatom Z doped to the matrix semiconductor, in which the heteroatom Z is inserted in a bond so as to form a bond-center structure with an stretched bond length, and the bond-center structure is contained in a proportion of 1% or more based on the heteroatom Z.
摘要翻译：半导体材料包括矩阵半导体，其包括彼此键合成四面体键结构的构成原子和掺杂到基体半导体的杂原子Z，其中杂原子Z插入键以形成键中心结构，拉伸的键长度，并且键 - 中心结构以基于杂原子Z的1％或更多的比例包含。

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