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1. 发明授权

US09559487B2 Integrated high-power tunable laser with adjustable outputs 有权
标题翻译：集成大功率可调谐激光器，可调输出
公开(公告)号：US09559487B2
公开(公告)日：2017-01-31
申请号：US14797018
申请日：2015-07-10
申请人： Acacia Communications, Inc.
发明人： Christopher Doerr
IPC分类号： H01S3/10 , H01S5/00 , H01S5/32 , H01S5/323 , H01S5/0683 , H01S5/40 , H01S5/026 , H01S5/0687 , H01S5/10 , H01S5/062
CPC分类号： H01S5/06246 , H01S3/10015 , H01S5/0261 , H01S5/0683 , H01S5/0687 , H01S5/101 , H01S5/1014 , H01S5/1025 , H01S5/1032 , H01S5/3224 , H01S5/3235 , H01S5/32391 , H01S5/4062 , H01S5/50
摘要： A tunable laser that includes an array of parallel optical amplifiers is described. The laser may also include an intracavity N×M coupler that couples power between a cavity mirror and the array of parallel optical amplifiers. Phase adjusters in optical paths between the N×M coupler and the optical amplifiers can be used to adjust an amount of power output from M−1 ports of the N×M coupler. A tunable wavelength filter is incorporated in the laser cavity to select a lasing wavelength.
摘要翻译：描述了包括并行光放大器阵列的可调谐激光器。激光器还可以包括腔内N×M耦合器，其耦合腔镜与阵列的并行光放大器之间的功率。可以使用N×M耦合器和光放大器之间的光路中的相位调节器来调节从N×M耦合器的M-1端口输出的功率量。可激光波长滤波器结合在激光腔中以选择激光波长。

2. 发明申请

US20160211649A1 TENSILE STRAINED SEMICONDUCTOR PHOTON EMISSION AND DETECTION DEVICES AND INTEGRATED PHOTONICS SYSTEM 审中-公开
公开(公告)号：US20160211649A1
公开(公告)日：2016-07-21
申请号：US15000975
申请日：2016-04-04
申请人： Acorn Technologies, Inc.
发明人： Paul A. Clifton , Andreas Goebel , R. Stockton Gaines
IPC分类号： H01S5/187 , H01L27/146 , H01S5/22 , H01S5/125 , H01S5/32
CPC分类号： H01S5/187 , B82Y20/00 , H01L27/14625 , H01L27/14643 , H01L31/028 , H01L31/0352 , H01L31/1808 , H01L33/34 , H01S5/125 , H01S5/2203 , H01S5/227 , H01S5/3201 , H01S5/3223 , H01S5/3224 , H01S5/3427 , Y02E10/547
摘要： Tensile strained germanium is provided that can be sufficiently strained to provide a nearly direct band gap material or a direct band gap material. Compressively stressed or tensile stressed stressor materials in contact with germanium regions induce uniaxial or biaxial tensile strain in the germanium regions. Stressor materials may include silicon nitride or silicon germanium. The resulting strained germanium structure can be used to emit or detect photons including, for example, generating photons within a resonant cavity to provide a laser.

3. 发明授权

US09287456B2 Silicon-germanium light-emitting element 有权
标题翻译：硅 - 锗发光元件
公开(公告)号：US09287456B2
公开(公告)日：2016-03-15
申请号：US14127837
申请日：2012-06-12
申请人： Yuji Suwa , Shinichi Saito , Etsuko Nomoto , Makoto Takahashi
发明人： Yuji Suwa , Shinichi Saito , Etsuko Nomoto , Makoto Takahashi
IPC分类号： H01L33/06 , H01L33/34 , H01L33/36 , H01L33/00 , H01S5/32 , H01L33/20 , H01S5/042 , H01S5/10
CPC分类号： H01L33/36 , H01L33/0054 , H01L33/06 , H01L33/20 , H01L33/34 , H01S5/0424 , H01S5/1032 , H01S5/3224
摘要： Provided is an element structure whereby it is possible to produce a silicon-germanium light-emitting element enclosing an injected carrier within a light-emitting region. Also provided is a method of manufacturing the structure. Between the light-emitting region and an electrode there is produced a narrow passage for the carrier, specifically, a one-dimensional or two-dimensional quantum confinement region. A band gap opens up in this section due to the quantum confinement, thereby forming an energy barrier for both electrons and positive holes, and affording an effect analogous to a double hetero structure in an ordinary Group III-V semiconductor laser. Because no chemical elements other than those used in ordinary silicon processes are employed, the element can be manufactured inexpensively, simply by controlling the shape of the element.
摘要翻译：提供了一种元件结构，由此可以在发光区域内产生包围注入载体的硅锗发光元件。还提供了一种制造该结构的方法。在发光区域和电极之间，为载体产生窄通道，具体地说，是一维或二维量子限制区域。由于量子限制，在该部分中带隙打开，由此形成电子和空穴的能量势垒，并且提供类似于普通III-V族半导体激光器中的双异质结构的效果。由于不使用在普通硅工艺中使用的化学元素以外的化学元素，所以可以通过简单地控制元件的形状来廉价地制造元件。

4. 发明授权

US07550779B2 Light emitting device with filled tetrahedral (FT) semiconductor in the active layer 失效
标题翻译：在活性层中具有填充的四面体（FT）半导体的发光器件
公开(公告)号：US07550779B2
公开(公告)日：2009-06-23
申请号：US12207178
申请日：2008-09-09
申请人： Kazushige Yamamoto , Tatsuo Shimizu , Shigeru Haneda
发明人： Kazushige Yamamoto , Tatsuo Shimizu , Shigeru Haneda
IPC分类号： H01L27/15
CPC分类号： H01L33/26 , B82Y20/00 , H01S5/22 , H01S5/3224 , H01S5/3412
摘要： A light emitting device includes an active layer including atoms A of a matrix semiconductor having a tetrahedral structure, a heteroatom D substituted for the atom A in a lattice site, and a heteroatom Z inserted into an interstitial site positioned closest to the heteroatom D, the heteroatom D having a valence electron number differing by +1 or −1 from that of the atom A, and the heteroatom Z having an electron configuration of a closed shell structure through charge compensation with the heteroatom D, and an n-electrode and a p-electrode adapted to supply a current to the active layer.
摘要翻译：发光器件包括活性层，其包括具有四面体结构的基质半导体的原子A，取代晶格位点中的原子A的杂原子D和插入最靠近杂原子D的间隙位置的杂原子Z，具有与原子A的价电子数不等于+1或-1的杂原子D，并且通过电荷补偿与杂原子D具有闭合壳结构的电子构型的杂原子Z，以及n电极和p - 电极，其适于向有源层提供电流。

5. 发明授权

US07391801B1 Electrically pumped Group IV semiconductor micro-ring laser 有权
标题翻译：电泵IV组半导体微环激光器
公开(公告)号：US07391801B1
公开(公告)日：2008-06-24
申请号：US11286010
申请日：2005-11-25
申请人： Richard A. Soref , Stephen J. Emelett
发明人： Richard A. Soref , Stephen J. Emelett
IPC分类号： H01S3/08 , H01S5/00
CPC分类号： H01S5/1071 , H01S5/021 , H01S5/026 , H01S5/0425 , H01S5/1032 , H01S5/2231 , H01S5/3223 , H01S5/3224
摘要： An electrically pumped semiconductor laser is provided as including a waveguide structure disposed on the substrate. An optical coupling layer is disposed on the substrate and the waveguide. A resonator layer is disposed on the optical coupling layer and may be adapted to include a photonic crystal lattice having a plurality of substantially cylindrical pores extending downwardly into the resonator layer. An insulating cap layer may be disposed on the resonator layer which operatives to seal the photonic crystal lattice. A first plug filled vias is formed on a central region of the cap layer, which extends downwardly to permit a bottom portion of the first plug to communicate with the photonic crystal lattice. Further, a second plug filled vias is formed on an edge region of the cap layer and extends downwardly to permit a bottom portion of the second plug to communicate with the photonic crystal lattice.
摘要翻译：提供电泵浦的半导体激光器，其包括设置在基板上的波导结构。光耦合层设置在基板和波导上。谐振器层设置在光学耦合层上，并且可以适于包括具有向下延伸到谐振器层中的多个基本圆柱形孔的光子晶格。绝缘盖层可以设置在谐振器层上，操作者可以密封光子晶格。在盖层的中心区域上形成第一插塞填充的通孔，其向下延伸以允许第一插头的底部与光子晶格格栅连通。此外，第二插头填充的通孔形成在盖层的边缘区域上并且向下延伸以允许第二插头的底部与光子晶格连接。

6. 发明申请

US20080137695A1 OPTICAL SEMICONDUCTOR DEVICE AND OPTICAL WAVEGUIDE 有权
标题翻译：光学半导体器件和光波导
公开(公告)号：US20080137695A1
公开(公告)日：2008-06-12
申请号：US11950447
申请日：2007-12-05
申请人： Makoto Takahashi , Hideo Arimoto , Kazuhiko Hosomi , Toshihiko Fukamachi , Shigeki Makino , Yasunobu Matsuoka , Toshiki Sugawara
发明人： Makoto Takahashi , Hideo Arimoto , Kazuhiko Hosomi , Toshihiko Fukamachi , Shigeki Makino , Yasunobu Matsuoka , Toshiki Sugawara
IPC分类号： H01S5/026 , G02B6/10
CPC分类号： H01S5/026 , G02B6/1228 , G02B6/125 , H01S5/021 , H01S5/028 , H01S5/1014 , H01S5/12 , H01S5/3224
摘要： A core of an optical waveguide and a core of a waveguide type optical device are adjacently disposed, and a layer is continuously formed at one end of the core of the waveguide type optical device, wherein an effective refractive index of the layer decreases toward a long axis direction of the optical waveguide stripe.
摘要翻译：波导型光学器件的光波导和芯的芯相邻布置，并且在波导型光学器件的芯的一端连续形成层，其中该层的有效折射率朝向长度减小光波导条的轴方向。

7. 发明申请

US20070152234A1 LIGHT EMITTING DEVICE 失效
标题翻译：发光装置
公开(公告)号：US20070152234A1
公开(公告)日：2007-07-05
申请号：US11533149
申请日：2006-09-19
申请人： Kazushige YAMAMOTO , Tatsuo SHIMIZU , Shigeru HANEDA
发明人： Kazushige YAMAMOTO , Tatsuo SHIMIZU , Shigeru HANEDA
IPC分类号： H01L33/00
CPC分类号： H01L33/26 , B82Y20/00 , H01S5/22 , H01S5/3224 , H01S5/3412
摘要： A light emitting device includes an active layer including atoms A of a matrix semiconductor having a tetrahedral structure, a heteroatom D substituted for the atom A in a lattice site, and a heteroatom Z inserted into an interstitial site positioned closest to the heteroatom D, the heteroatom D having a valence electron number differing by +1 or −1 from that of the atom A, and the heteroatom Z having an electron configuration of a closed shell structure through charge compensation with the heteroatom D, and an n-electrode and a p-electrode adapted to supply a current to the active layer.
摘要翻译：发光器件包括活性层，其包括具有四面体结构的基质半导体的原子A，取代晶格位点中的原子A的杂原子D和插入最靠近杂原子D的间隙位置的杂原子Z，具有与原子A的价电子数不等于+1或-1的杂原子D，并且通过电荷补偿与杂原子D具有闭合壳结构的电子构型的杂原子Z，以及n电极和p - 电极，其适于向有源层提供电流。

8. 发明授权

US5917195A Phonon resonator and method for its production 失效
标题翻译：声子谐振器及其制作方法
公开(公告)号：US5917195A
公开(公告)日：1999-06-29
申请号：US393380
申请日：1995-02-17
申请人： Thomas G. Brown
发明人： Thomas G. Brown
IPC分类号： H01L29/78 , G02F1/015 , H01L29/66 , H01L29/861 , H01L31/0352 , H01L31/10 , H01L33/06 , H01S5/00 , H01S5/10 , H01S5/12 , H01S5/183 , H01S5/30 , H01S5/32 , H01S5/50 , H01L29/15
CPC分类号： H01L33/06 , H01L31/0352 , G02F1/015 , H01S5/06203 , H01S5/12 , H01S5/183 , H01S5/3031 , H01S5/3223 , H01S5/3224 , H01S5/50
摘要： A structure of periodically varying density is provided, that acts as a phonon resonator for phonons capable of participating in phonon-electron interactions. Specifically, a phonon resonator that is resonant for phonons of appropriate momentum to participate in indirect radiative transitions and/or inter zone intervalley scattering events is provided. Preferably, the structure is an isotope superlattice, most preferably of silicon. The structure of the present invention has improved optical, electrical, and/or heat transfer properties. A method of preparing a the structure of the present invention is also provided.
摘要翻译：提供周期性变化密度的结构，其作为能够参与声子 - 电子相互作用的声子的声子谐振器。具体地说，提供了一个对于适当动量的声子共振以参与间接辐射跃迁和/或区间间隔散射事件的声子谐振器。优选地，该结构是同位素超晶格，最优选硅。本发明的结构具有改善的光学，电学和/或传热性能。还提供了制备本发明结构的方法。

9. 发明授权

US12132522B1 Systems and methods for optical full-field transmission using photonic integration 有权
公开(公告)号：US12132522B1
公开(公告)日：2024-10-29
申请号：US18214191
申请日：2023-06-26
申请人： CABLE TELEVISION LABORATORIES, INC.
发明人： Haipeng Zhang , Junwen Zhang , Mu Xu , Zhensheng Jia , Luis Alberto Campos
IPC分类号： H04B10/50 , G02B27/28 , G02F1/21 , H01S5/32 , H01S5/323 , H04B10/25 , H04B10/516
CPC分类号： H04B10/504 , G02B27/283 , G02B27/286 , G02F1/218 , H01S5/3224 , H01S5/32391 , H04B10/25 , H04B10/5161 , G02F1/212
摘要： An optical full-field transmitter for an optical communications network includes a primary laser source configured to provide a narrow spectral linewidth for a primary laser signal, and a first intensity modulator in communication with a first amplitude data source. The first intensity modulator is configured to output a first amplitude-modulated optical signal from the laser signal. The transmitter further includes a first phase modulator in communication with a first phase data source and the first amplitude-modulated optical signal. The first phase modulator is configured to output a first two-stage full-field optical signal. The primary laser source has a structure based on a III-V compound semiconductor.

10. 发明授权

US10008827B2 Tensile strained semiconductor photon emission and detection devices and integrated photonics system 有权
公开(公告)号：US10008827B2
公开(公告)日：2018-06-26
申请号：US15000975
申请日：2016-04-04
申请人： Acorn Technologies, Inc.
发明人： Paul A. Clifton , Andreas Goebel , R. Stockton Gaines
IPC分类号： H01S5/00 , H01S5/187 , H01L31/0352 , H01S5/22 , H01S5/32 , H01L33/34 , B82Y20/00 , H01L31/028 , H01L31/18 , H01S5/125 , H01S5/34 , H01L27/146 , H01S5/227
CPC分类号： H01S5/3201 , B82Y20/00 , H01L27/14625 , H01L27/14643 , H01L31/028 , H01L31/0352 , H01L31/1808 , H01L33/34 , H01S5/125 , H01S5/187 , H01S5/2203 , H01S5/227 , H01S5/3223 , H01S5/3224 , H01S5/3427 , Y02E10/547
摘要： Tensile strained germanium is provided that can be sufficiently strained to provide a nearly direct band gap material or a direct band gap material. Compressively stressed or tensile stressed stressor materials in contact with germanium regions induce uniaxial or biaxial tensile strain in the germanium regions. Stressor materials may include silicon nitride or silicon germanium. The resulting strained germanium structure can be used to emit or detect photons including, for example, generating photons within a resonant cavity to provide a laser.

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