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1. 发明授权

US07977693B2 Semiconductor light-emitting material with tetrahedral structure formed therein 有权
标题翻译：在其中形成四面体结构的半导体发光材料
公开(公告)号：US07977693B2
公开(公告)日：2011-07-12
申请号：US11531426
申请日：2006-09-13
申请人： Tatsuo Shimizu , Kazushige Yamamoto , Shigeru Haneda
发明人： Tatsuo Shimizu , Kazushige Yamamoto , Shigeru Haneda
IPC分类号： H01L33/00
CPC分类号： H01L33/34 , H01L27/1443 , H01L31/153 , H01S5/0207 , H01S5/0261 , H01S5/0262 , H01S5/028 , H01S5/18311 , H01S5/18369 , H01S5/22 , H01S5/305 , H01S5/3054 , H01S5/3201 , H01S5/3224 , H01S5/423
摘要： A semiconductor light-emitting material includes a semiconductor substance including a matrix semiconductor whose constituent atoms are bonded to form a tetrahedral structure, an impurity atom S substituted for an atom in a lattice site of the matrix semiconductor, and an impurity atom I inserted in a interstitial site of the matrix semiconductor, the impurity atom S and the impurity atom I being bonded through charge transfer therebetween in a state that the impurity atom S has an electric charge coincident with that of the constituent atom of the matrix semiconductor and the impurity atom I has an electron configuration of a closed shell structure, in which the semiconductor substance is stretched in a direction of a bond forming the tetrahedral structure.
摘要翻译：半导体发光材料包括半导体物质，其包含其组成原子键合以形成四面体结构的基质半导体，取代基质半导体的晶格位置中的原子的杂质原子S和插入到基质半导体中的杂质原子I 在杂质原子S的电荷与矩阵半导体的构成原子的电荷一致的状态下，杂质原子S和杂质原子I通过电荷转移而键合的杂质原子I和杂质原子I 具有闭合壳结构的电子构造，其中半导体物质沿形成四面体结构的键的方向被拉伸。

2. 发明申请

US20090008653A1 LIGHT EMITTING DEVICE 失效
标题翻译：发光装置
公开(公告)号：US20090008653A1
公开(公告)日：2009-01-08
申请号：US12207178
申请日：2008-09-09
申请人： Kazushige YAMAMOTO , Tatsuo Shimizu , Shigeru Haneda
发明人： Kazushige YAMAMOTO , Tatsuo Shimizu , Shigeru Haneda
IPC分类号： H01L33/00 , H01J1/62
CPC分类号： H01L33/26 , B82Y20/00 , H01S5/22 , H01S5/3224 , H01S5/3412
摘要： A light emitting device includes an active layer including atoms A of a matrix semiconductor having a tetrahedral structure, a heteroatom D substituted for the atom A in a lattice site, and a heteroatom Z inserted into an interstitial site positioned closest to the heteroatom D, the heteroatom D having a valence electron number differing by +1 or −1 from that of the atom A, and the heteroatom Z having an electron configuration of a closed shell structure through charge compensation with the heteroatom D, and an n-electrode and a p-electrode adapted to supply a current to the active layer.
摘要翻译：发光器件包括活性层，其包括具有四面体结构的基质半导体的原子A，取代晶格位点中的原子A的杂原子D和插入最靠近杂原子D的间隙位置的杂原子Z，具有与原子A的价电子数不等于+1或-1的杂原子D，并且通过电荷补偿与杂原子D具有闭合壳结构的电子构型的杂原子Z，以及n电极和p - 电极，其适于向有源层提供电流。

3. 发明授权

US07446348B2 Light emitting device with filled tetrahedral (FT) semiconductor in the active layer 失效
标题翻译：在活性层中具有填充的四面体（FT）半导体的发光器件
公开(公告)号：US07446348B2
公开(公告)日：2008-11-04
申请号：US11533149
申请日：2006-09-19
申请人： Kazushige Yamamoto , Tatsuo Shimizu , Shigeru Haneda
发明人： Kazushige Yamamoto , Tatsuo Shimizu , Shigeru Haneda
IPC分类号： H01L27/15
CPC分类号： H01L33/26 , B82Y20/00 , H01S5/22 , H01S5/3224 , H01S5/3412
摘要： A light emitting device includes an active layer including atoms A of a matrix semiconductor having a tetrahedral structure, a heteroatom D substituted for the atom A in a lattice site, and a heteroatom Z inserted into an interstitial site positioned closest to the heteroatom D, the heteroatom D having a valence electron number differing by +1 or −1 from that of the atom A, and the heteroatom Z having an electron configuration of a closed shell structure through charge compensation with the heteroatom D, and an n-electrode and a p-electrode adapted to supply a current to the active layer.
摘要翻译：发光器件包括活性层，其包括具有四面体结构的基质半导体的原子A，取代晶格位点中的原子A的杂原子D和插入最靠近杂原子D的间隙位置的杂原子Z，具有与原子A的价电子数不等于+1或-1的杂原子D，并且通过电荷补偿与杂原子D具有闭合壳结构的电子构型的杂原子Z，以及n电极和p - 电极，其适于向有源层提供电流。

4. 发明申请

US20070267711A1 OPTICAL RECEIVING DEVICE 审中-公开
标题翻译：光接收装置
公开(公告)号：US20070267711A1
公开(公告)日：2007-11-22
申请号：US11688595
申请日：2007-03-20
申请人： Kazushige Yamamoto , Tatsuo Shimizu , Shigeru Haneda
发明人： Kazushige Yamamoto , Tatsuo Shimizu , Shigeru Haneda
IPC分类号： H01L31/0232
CPC分类号： H01L31/103 , H01L27/14609 , H01L27/14643 , H01L27/14806 , H01L31/028 , Y02E10/547
摘要： An optical receiving device has a photoelectric conversion layer including a matrix semiconductor containing silicon atoms as a main component, an n-type dopant D substituted for the silicon atom in a lattice site, and a heteroatom Z inserted into an interstitial site positioned closest to the n-type dopant D, in which the heteroatom Z has an electron configuration of a closed shell structure through charge compensation with the dopant D.
摘要翻译：光接收装置具有光电转换层，该光电转换层包括以硅原子为主要成分的矩阵半导体，取代晶格位置的硅原子的n型掺杂剂D，以及插入位于最靠近 n型掺杂剂D，其中通过与掺杂剂D的电荷补偿，杂原子Z具有封闭壳结构的电子构型。

5. 发明申请

US20070145394A1 SEMICONDUCTOR LIGHT-EMITTING MATERIAL AND LIGHT EMITTING DEVICE 有权
标题翻译：半导体发光材料和发光器件
公开(公告)号：US20070145394A1
公开(公告)日：2007-06-28
申请号：US11531426
申请日：2006-09-13
申请人： Tatsuo Shimizu , Kazushige Yamamoto , Shigeru Haneda
发明人： Tatsuo Shimizu , Kazushige Yamamoto , Shigeru Haneda
IPC分类号： H01L33/00
CPC分类号： H01L33/34 , H01L27/1443 , H01L31/153 , H01S5/0207 , H01S5/0261 , H01S5/0262 , H01S5/028 , H01S5/18311 , H01S5/18369 , H01S5/22 , H01S5/305 , H01S5/3054 , H01S5/3201 , H01S5/3224 , H01S5/423
摘要： A semiconductor light-emitting material includes a semiconductor substance including a matrix semiconductor whose constituent atoms are bonded to form a tetrahedral structure, an impurity atom S substituted for an atom in a lattice site of the matrix semiconductor, and an impurity atom I inserted in a interstitial site of the matrix semiconductor, the impurity atom S and the impurity atom I being bonded through charge transfer therebetween in a state that the impurity atom S has an electric charge coincident with that of the constituent atom of the matrix semiconductor and the impurity atom I has an electron configuration of a closed shell structure, in which the semiconductor substance is stretched in a direction of a bond forming the tetrahedral structure.
摘要翻译：半导体发光材料包括半导体物质，其包含其组成原子键合以形成四面体结构的基质半导体，取代基质半导体的晶格位置中的原子的杂质原子S和插入到基质半导体中的杂质原子I 在杂质原子S的电荷与矩阵半导体的构成原子的电荷一致的状态下，杂质原子S和杂质原子I通过电荷转移而键合的杂质原子I和杂质原子I 具有闭合壳结构的电子构造，其中半导体物质沿形成四面体结构的键的方向被拉伸。

6. 发明授权

US07550779B2 Light emitting device with filled tetrahedral (FT) semiconductor in the active layer 失效
标题翻译：在活性层中具有填充的四面体（FT）半导体的发光器件
公开(公告)号：US07550779B2
公开(公告)日：2009-06-23
申请号：US12207178
申请日：2008-09-09
申请人： Kazushige Yamamoto , Tatsuo Shimizu , Shigeru Haneda
发明人： Kazushige Yamamoto , Tatsuo Shimizu , Shigeru Haneda
IPC分类号： H01L27/15
CPC分类号： H01L33/26 , B82Y20/00 , H01S5/22 , H01S5/3224 , H01S5/3412
摘要： A light emitting device includes an active layer including atoms A of a matrix semiconductor having a tetrahedral structure, a heteroatom D substituted for the atom A in a lattice site, and a heteroatom Z inserted into an interstitial site positioned closest to the heteroatom D, the heteroatom D having a valence electron number differing by +1 or −1 from that of the atom A, and the heteroatom Z having an electron configuration of a closed shell structure through charge compensation with the heteroatom D, and an n-electrode and a p-electrode adapted to supply a current to the active layer.
摘要翻译：发光器件包括活性层，其包括具有四面体结构的基质半导体的原子A，取代晶格位点中的原子A的杂原子D和插入最靠近杂原子D的间隙位置的杂原子Z，具有与原子A的价电子数不等于+1或-1的杂原子D，并且通过电荷补偿与杂原子D具有闭合壳结构的电子构型的杂原子Z，以及n电极和p - 电极，其适于向有源层提供电流。

7. 发明授权

US07859077B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US07859077B2
公开(公告)日：2010-12-28
申请号：US11937730
申请日：2007-11-09
申请人： Kazushige Yamamoto , Tatsuo Shimizu
发明人： Kazushige Yamamoto , Tatsuo Shimizu
IPC分类号： H01L31/06
CPC分类号： H01L27/1443 , H04B10/801
摘要： A semiconductor device includes: an n-type MOS transistor and a p-type MOS transistor connected in series; and a first gate extending via an insulating film above a channel of the n-type MOS transistor and a channel of the p-type MOS transistor. By providing light to the first gate, electrons and holes are generated, at least one of either of the electrons and holes passes through above the channel of the n-type MOS transistor and at least one of the either of the electrons and holes passes through above the channel of the p-type MOS transistor, whereby the n-type MOS transistor and the p-type MOS transistor are switched.
摘要翻译：半导体器件包括：串联连接的n型MOS晶体管和p型MOS晶体管; 以及通过n型MOS晶体管的沟道上的绝缘膜和p型MOS晶体管的沟道延伸的第一栅极。通过向第一栅极提供光，产生电子和空穴，电子和空穴中的至少一个通过n型MOS晶体管的沟道上方，并且任一电子和空穴中的至少一个穿过在p型MOS晶体管的沟道之上，从而切换n型MOS晶体管和p型MOS晶体管。

8. 发明授权

US07809039B2 Light-emitting device and manufacturing method of the same 失效
标题翻译：发光装置及其制造方法
公开(公告)号：US07809039B2
公开(公告)日：2010-10-05
申请号：US12409693
申请日：2009-03-24
申请人： Kazushige Yamamoto , Haruhiko Yoshida , Tatsuo Shimizu
发明人： Kazushige Yamamoto , Haruhiko Yoshida , Tatsuo Shimizu
IPC分类号： H01S5/00
CPC分类号： H01S5/125 , B82Y20/00 , H01S5/021 , H01S5/026 , H01S5/1032 , H01S5/1071 , H01S5/30 , H01S5/3224 , H01S5/34 , H01S5/3428
摘要： A semiconductor light-emitting device including an insulating film, an optical resonator formed on the insulating film, and a p-electrode and an n-electrode which are disposed on the both sides of the optical resonator, respectively. The optical resonator includes a first semiconductor wire and a second semiconductor wire which are arranged in parallel with a space left therebetween, the space being narrower than emission wavelength, resonator mirrors disposed at the both ends of these semiconductor wires, and a plurality of semiconductor ultra-thin films which are interposed between the first semiconductor wire and the second semiconductor wire and are electrically connected with these semiconductor wires, the first semiconductor wire is electrically connected with the p-electrode, and the second semiconductor wire is electrically connected with the n-electrode, thereby enabling the semiconductor ultra-thin films to generate laser oscillation as a current is injected thereinto.
摘要翻译：一种半导体发光装置，分别包括绝缘膜，形成在绝缘膜上的光谐振器，以及分别设置在光谐振器两侧的p电极和n电极。光谐振器包括：第一半导体布线和第二半导体布线，它们与其间隔开的空间平行设置，该空间比发射波长窄，设置在这些半导体布线两端的谐振镜，以及多个半导体超导体介于第一半导体布线和第二半导体布线之间并与这些半导体布线电连接的第一半导体布线与p电极电连接，第二半导体布线与n型电极电连接，电极，从而使得半导体超薄膜能够在注入电流时产生激光振荡。

9. 发明申请

US20090245314A1 LIGHT-EMITTING DEVICE AND MANUFACTURING METHOD OF THE SAME 失效
标题翻译：发光装置及其制造方法
公开(公告)号：US20090245314A1
公开(公告)日：2009-10-01
申请号：US12409693
申请日：2009-03-24
申请人： Kazushige YAMAMOTO , Haruhiko Yoshida , Tatsuo Shimizu
发明人： Kazushige YAMAMOTO , Haruhiko Yoshida , Tatsuo Shimizu
IPC分类号： H01S5/026
CPC分类号： H01S5/125 , B82Y20/00 , H01S5/021 , H01S5/026 , H01S5/1032 , H01S5/1071 , H01S5/30 , H01S5/3224 , H01S5/34 , H01S5/3428
摘要： A semiconductor light-emitting device including an insulating film, an optical resonator formed on the insulating film, and a p-electrode and an n-electrode which are disposed on the both sides of the optical resonator, respectively. The optical resonator includes a first semiconductor wire and a second semiconductor wire which are arranged in parallel with a space left therebetween, the space being narrower than emission wavelength, resonator mirrors disposed at the both ends of these semiconductor wires, and a plurality of semiconductor ultra-thin films which are interposed between the first semiconductor wire and the second semiconductor wire and are electrically connected with these semiconductor wires, the first semiconductor wire is electrically connected with the p-electrode, and the second semiconductor wire is electrically connected with the n-electrode, thereby enabling the semiconductor ultra-thin films to generate laser oscillation as a current is injected thereinto.
摘要翻译：一种半导体发光装置，分别包括绝缘膜，形成在绝缘膜上的光谐振器，以及分别设置在光谐振器两侧的p电极和n电极。光谐振器包括：第一半导体布线和第二半导体布线，它们与其间隔开的空间平行设置，该空间比发射波长窄，设置在这些半导体布线的两端的谐振镜，以及多个半导体超导体介于第一半导体布线和第二半导体布线之间并与这些半导体布线电连接的第一半导体布线与p电极电连接，第二半导体布线与n型电极电连接，电极，从而使得半导体超薄膜能够在注入电流时产生激光振荡。

10. 发明授权

US07750364B2 Light-emitting device 失效
标题翻译：发光装置
公开(公告)号：US07750364B2
公开(公告)日：2010-07-06
申请号：US12199148
申请日：2008-08-27
申请人： Kazushige Yamamoto , Tatsuo Shimizu
发明人： Kazushige Yamamoto , Tatsuo Shimizu
IPC分类号： H01L27/15
CPC分类号： H01L33/343
摘要： A light-emitting device includes an active region, an n-type region, a p-type region, an n-electrode and a p-electrode. The active region is formed from a semiconductor material. The semiconductor material has a tetrahedral structure and includes an impurity. The impurity creates at least two energy levels connected with the allowed transition within a band gap of the semiconductor material. The n-type and p-type regions in contact with the active region are disposed between the n-type and p-type regions. An excitation element is configured to inject an electron from the n-type region and inject a hole from the p-type region so as to generate an electron-hole pair in the active region. The active region has a thickness no less than an atomic distance of the semiconductor and no more than 5 nm.
摘要翻译：发光器件包括有源区，n型区，p型区，n电极和p电极。有源区由半导体材料形成。半导体材料具有四面体结构并且包括杂质。杂质产生与半导体材料的带隙内允许的过渡相连的至少两个能级。与有源区接触的n型和p型区设置在n型和p型区之间。激励元件被配置为从n型区域注入电子并从p型区域注入空穴，以在活性区域中产生电子 - 空穴对。有源区的厚度不小于半导体的原子距离，不大于5nm。

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