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    • 4. 发明授权
    • Magnetic recording element, magnetic recording apparatus and recording method of information
    • 磁记录元件,磁记录装置及信息记录方法
    • US07532503B2
    • 2009-05-12
    • US11305884
    • 2005-12-19
    • Hirofumi MoriseShiho NakamuraShigeru HanedaTakahiro Hirai
    • Hirofumi MoriseShiho NakamuraShigeru HanedaTakahiro Hirai
    • G11C7/00
    • G11C11/16
    • A magnetic recording element includes a first fixed layer having a first and second face and having a magnetization direction fixed in a direction penetrating the first and second face. A free layer has a third and fourth face, a magnetization easy and hard axis both extending along the third or fourth face, and a magnetization direction which changes according to a direction of a current flowing through the first and fourth face with a magnetic field applied in a fixed direction or according to a direction of a magnetic field applied to the free layer with a current flowing through the first and fourth face in a fixed direction. A nonmagnetic first intermediate layer is provided between the second and third face. A magnetic field generating layer applies a magnetic field smaller than the anisotropy field of the free layer to the free layer along the magnetization hard axis.
    • 磁记录元件包括具有第一面和第二面的第一固定层,并且具有沿穿过第一和第二面的方向固定的磁化方向。 自由层具有第三和第四面,磁化容易和硬轴都沿着第三或第四面延伸,并且磁化方向根据施加磁场的第一和第四面的电流的方向而变化 沿固定方向或根据施加到自由层的磁场的方向,电流以固定方向流过第一和第四面。 非磁性第一中间层设置在第二面和第三面之间。 磁场产生层沿着磁化硬轴向自由层施加小于自由层的各向异性场的磁场。
    • 6. 发明申请
    • Magneto-resistance effect element
    • 磁阻效应元件
    • US20050219768A1
    • 2005-10-06
    • US11090074
    • 2005-03-28
    • Shiho NakamuraShigeru HanedaHirofumi Morise
    • Shiho NakamuraShigeru HanedaHirofumi Morise
    • H01F10/30G11B5/127G11B5/33G11B5/39H01F10/32H01L43/08
    • G11B5/39
    • A magneto-resistance effect element can obtain a high output and makes it possible to stabilize magnetization in a magnetization free layer therein even if a sense current is caused to flow. The magneto-resistance effect element is provided with a magnetization free layer whose magnetization direction is variable, a magnetization pinned layer whose magnetization direction is pinned, and an intermediate layer provided between the magnetization free layer and the magnetization pinned layer, where when no external magnetic field is present and no current flows, the magnetization direction in the magnetization free layer is anti-parallel to the magnetization direction pinned in the magnetization pinned layer, an easy axis of magnetization in the magnetization free layer is parallel to the magnetization direction pinned in the magnetization pinned layer, and a sense current flows from the magnetization free layer to the magnetization pinned layer.
    • 磁阻效应元件可以获得高输出,并且使得即使使感测电流流动,也可以使其在无磁化层中的磁化稳定。 磁阻效应元件具有磁化方向可变的磁化自由层,其磁化方向被钉扎的磁化钉扎层以及设置在磁化自由层和磁化固定层之间的中间层,其中当没有外部磁 磁场存在,没有电流流动,磁化自由层中的磁化方向与磁化被钉扎层中钉扎的磁化方向反平行,磁化自由层的易磁化轴平行于在 磁化固定层,感测电流从磁化自由层流向磁化固定层。
    • 7. 发明授权
    • Magnetic element and signal processing device
    • 磁性元件和信号处理装置
    • US07598578B2
    • 2009-10-06
    • US11390475
    • 2006-03-28
    • Shiho NakamuraHirofumi MoriseShigeru Haneda
    • Shiho NakamuraHirofumi MoriseShigeru Haneda
    • H01L41/00
    • H01F10/3268B82Y25/00G11C11/16H01F10/3254H01F10/329H01L29/66984H01L43/08Y10S977/933
    • A magnetic element includes a channel layer, a first magnetic electrode which is in contact with the channel layer, a second magnetic electrode which is in contact with the channel layer and is insulated from the first magnetic electrode, a first intermediate layer which is provided adjacent to the first magnetic electrode and has a first insulating layer, a first magnetic layer which is provided in contact with a surface of the first intermediate layer on an opposite side to a surface contacting the first magnetic electrode to transfer magnetization to the first magnetic electrode, a first electrode which is connected to the first magnetic electrode, and a second electrode which is connected to the second magnetic electrode, at least one of the first electrode and the second electrode outputting a first signal which changes depending on a magnetic arrangement of the first magnetic electrode and the second magnetic electrode.
    • 磁性元件包括沟道层,与沟道层接触的第一磁电极,与沟道层接触并与第一磁极绝缘的第二磁极,邻近设置的第一中间层 并且具有第一绝缘层,第一磁性层与第一中间层的与第一磁极接触的表面的相对侧与第一中间层的表面接触以将磁化转移到第一磁极, 连接到第一磁极的第一电极和连接到第二磁极的第二电极,第一电极和第二电极中的至少一个输出根据第一电极的磁性排列而变化的第一信号 磁极和第二磁极。
    • 8. 发明授权
    • Magnetic recording element and magnetic recording device using the same
    • 磁记录元件及使用其的磁记录装置
    • US07381480B2
    • 2008-06-03
    • US11117482
    • 2005-04-29
    • Shiho NakamuraShigeru HanedaHirofumi Morise
    • Shiho NakamuraShigeru HanedaHirofumi Morise
    • G11B5/33H01L29/82G11C11/15
    • G11C11/16H01L27/222H01L27/224H01L27/228H01L43/08Y10T428/1143Y10T428/1171Y10T428/1193
    • A magnetic recording element includes a fixed layer having first and second surfacesm, a recording layer having third and fourth surfaces and being essentially made of a ferromagnetic material having first and second atomic potentials for the majority-spin band electrons and the minority-spin band electrons, a spacer layer being arranged between the fixed and recording layers and being in contact with the second and third surfaces, a cap layer having fifth and sixth surfaces, being essentially made of a nonmagnetic material having a third atomic potential less than an intermediate value between the first and second atomic potentials, and having a thickness of not more than 3 nm, the fifth surface being in contact with the fourth surface, and a reflecting layer being in contact with the sixth surface and being essentially made of a nonmagnetic material having a forth atomic potential different from the third atomic potential.
    • 磁记录元件包括具有第一表面和第二表面的固定层,具有第三表面和第四表面的记录层,并且主要由具有第一和第二原子电位的铁磁材料制成,用于多数自旋带电子和少数自旋带电子 ,间隔层布置在固定层和记录层之间并且与第二和第三表面接触,具有第五和第六表面的盖层基本上由非磁性材料制成,其具有小于第三原子电位之间的中间值 第一和第二原子电位,并且具有不大于3nm的厚度,第五表面与第四表面接触,反射层与第六表面接触并且基本上由非磁性材料制成,具有 第四原子电位与第三原子电位不同。
    • 9. 发明授权
    • Magneto-resistance effect element capable of obtaining a reproducing signal with a high quality
    • 能够获得高质量的再现信号的磁阻效应元件
    • US07710690B2
    • 2010-05-04
    • US11090074
    • 2005-03-28
    • Shiho NakamuraShigeru HanedaHirofumi Morise
    • Shiho NakamuraShigeru HanedaHirofumi Morise
    • G11B5/33
    • G11B5/39
    • A magneto-resistance effect element can obtain a high output and makes it possible to stabilize magnetization in a magnetization free layer therein even if a sense current is caused to flow. The magneto-resistance effect element is provided with a magnetization free layer whose magnetization direction is variable, a magnetization pinned layer whose magnetization direction is pinned, and an intermediate layer provided between the magnetization free layer and the magnetization pinned layer, where when no external magnetic field is present and no current flows, the magnetization direction in the magnetization free layer is anti-parallel to the magnetization direction pinned in the magnetization pinned layer, an easy axis of magnetization in the magnetization free layer is parallel to the magnetization direction pinned in the magnetization pinned layer, and a sense current flows from the magnetization free layer to the magnetization pinned layer.
    • 磁阻效应元件可以获得高输出,并且使得即使使感测电流流动,也可以使其在无磁化层中的磁化稳定。 磁阻效应元件具有磁化方向可变的磁化自由层,其磁化方向被钉扎的磁化钉扎层以及设置在磁化自由层和磁化固定层之间的中间层,其中当没有外部磁 磁场存在,没有电流流动,磁化自由层中的磁化方向与磁化被钉扎层中钉扎的磁化方向反平行,磁化自由层的易磁化轴平行于在 磁化固定层,感测电流从磁化自由层流向磁化固定层。